Lecture #15. Bipolar Junction Transistors (BJTs)
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1 ctur #5 OUTN Th iolar Junction Transistor Fundamntals dal Transistor Analysis Rading: hatr 0,. 30 ctur 5, Slid iolar Junction Transistors (JTs Ovr th ast 3 ads, th highr layout dnsity and low-owr advantag of MOS tchnology has rodd away th JT s dominanc in intgratd-circuit roducts. (highr circuit dnsity bttr systm rformanc JTs ar still rfrrd in som digital-circuit and analog-circuit alications bcaus of thir high sd and surior gain. fastr circuit sd largr owr dissiation limits intgration lvl to ~0 4 circuits/chi 30 ctur 5, Slid
2 ntroduction Th JT is a 3-trminal dvic tys: PNP and NPN V V V V V V V V V V - V V V V V V V V V V V - V Th convntion usd in th txtbook dos not follow convntion (currnts dfind as ositiv flowing into a trminal 30 ctur 5, Slid 3 will follow th convntion usd in th txtbook harg Transort in a JT onsidr a rvrs-biasd n junction: Rvrs saturation currnt dnds on rat of minority-carrir gnration nar th junction can incras rvrs currnt by incrasing rat of minority-carrir gnration: Otical xcitation of carrirs lctrical injction of minority carrirs into th nighborhood of th junction 30 ctur 5, Slid 4
3 PNP JT Oration (Qualitativ Activ ias : V > 0 (forward bias, V < 0 (rvrs bias n mittr ollctor as 30 ctur 5, Slid 5 β JT sign mortant faturs of a good transistor: njctd minority carrirs do not rcombin in th nutral bas rgion mittr currnt is comrisd almost ntirly of carrirs injctd into th bas (rathr than carrirs injctd into th mittr 30 ctur 5, Slid 6
4 as urrnt omonnts Th bas currnt consists of majority carrirs sulid for. Rcombination of injctd minority carrirs in th bas. njction of carrirs into th mittr 3. Rvrs saturation currnt in collctor junction Rducs 4. Rcombination in th bas-mittr dltion rgion 30 ctur 5, Slid 7 ircuit onfigurations 30 ctur 5, Slid 8
5 Mods of Oration ommon-mittr outut charactristics ( vs. V 30 ctur 5, Slid 9 JT lctrostatics Undr normal orating conditions, th JT may b viwd lctrostatically as two indndnt n junctions 30 ctur 5, Slid 0
6 JT Prformanc Paramtrs (PNP mittr fficincy: γ cras (5 rlativ to (+ to incras fficincy + n 30 ctur 5, Slid as Transort Factor: α ommon-as d.c. urrnt Gain: T cras ( rlativ to ( to incras transort factor α γα T ollctor urrnt (PNP Th collctor currnt is comrisd of Hols injctd from mittr, which do not rcombin in th bas ( Rvrs saturation currnt of collctor junction (3 + whr 0 is th collctor currnt which flows whn 0 α α α β α 0 ( α 0 30 ctur 5, Slid ommon-mittr d.c. urrnt Gain: α β α
7 Notation (PNP JT N N A N τ τ n N n 0 n 0 n i /N N N P τ τ P 0 n0 n i /N N N A N τ τ n N n 0 n 0 n i /N 30 ctur 5, Slid 3 dal Transistor Analysis Solv th minority-carrir diffusion quation in ach quasi-nutral rgion to obtain xcss minority-carrir rofils diffrnt st of boundary conditions for ach rgion valuat minority-carrir diffusion currnts at dgs of dltion rgions n qa d dx" x" 0 qa d dx x0 n qa d dx' x' 0 d dx x Add hol & lctron comonnts togthr trminal currnts qa 30 ctur 5, Slid 4
8 mittr Rgion Formulation iffusion quation: 0 d τ dx" oundary onditions: ( x" 0 ( x" 0 n 30 ctur 5, Slid 5 as Rgion Formulation iffusion quation: 0 d τ dx oundary onditions: (0 0 ( 0 30 ctur 5, Slid 6
9 ollctor Rgion Formulation iffusion quation: 0 d τ dx' oundary onditions: ( x' 0 ( x' 0 n 30 ctur 5, Slid 7 urrnt Formulation n qa d dx" x" 0 qa d dx x0 qa d dx x n qa d dx' x' 0 30 ctur 5, Slid 8
10 mittr Rgion Solution d Th solution of 0 is: dx" x"/ ( x" A + τ A x"/ From th boundary conditions: ( x" 0 ( x" 0 n w hav: ( x" n 0 x"/ and: n qa n 30 ctur 5, Slid 9 ollctor Rgion Solution d Th solution of 0 is: dx' x'/ ( x' A + A From th boundary conditions: ( x' 0 τ x'/ ( x' 0 n w hav: ( x' n 0 x'/ and: n qa n 30 ctur 5, Slid 0
11 as Rgion Solution d Th solution of 0 is: dx x / ( x A + τ A x / From th boundary conditions: w hav: + ( x 0 0 (0 0 ( 0 ( x / ( x / ( / / x / x ( / / / 30 ctur 5, Slid Now, w know Thrfor, w can writ: as + + ( x 0 ( x 0 ξ sinh( ξ 0 0 ξ x x ( / ( / ( / / x / x ( / / / sinh sinh [ x ] ( sinh sinh ( x [ ] ( 30 ctur 5, Slid
12 know Thrfor, w hav: qa and: qa ξ + cosh( ξ ξ cosh( / [ ] 0 sinh( / sinh( / / cosh( / kt [ ] 0 sinh( / sinh( / 30 ctur 5, Slid 3 know: qa n n n qa qa Thrfor: qa qa qa 0 Trminal urrnts cosh( / [ ] sinh( / sinh( / / cosh( / kt [ ] 0 sinh( / n sinh( / cosh( / [( n0 + 0 ( ( 0 ( ] sinh( / sinh( / / cosh( / kt [( 0 ( ( n ] sinh( / sinh( / 30 ctur 5, Slid 4
13 Simlification n ral JTs, w mak << for high gain. Thn, sinc sinh cosh w hav: ( ξ ξ for ξ << ξ ( ξ + for ξ << + ( x 0 0 x ( x ( 30 ctur 5, Slid 5 Prformanc Paramtrs (Activ Mod γ Assumtions: ni N + + n n αt + α β n i i i ( n n i i N N N N N + + ( ( 30 ctur 5, Slid 6 mittr junction forward biasd, collctor junction rvrs biasd <<
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