Lossy and Lossless Inductance Simulators and Universal Filters Employing a New Versatile Active Block

Transcription

1 Oial scientific pape Lossy and Lossless nductance Siulatos and Univesal Filtes Eploy a ew Vesatile Active Block Mohaad Faseehudd, Jahaiah Sape, Sadia Shieen 3, Sawal Haid Md Ali 4 nstitute of Micoenee and anoelectonics (ME),UnivesityKebansaan Malaysia (UKM), Bani, Selano, Malaysia nstitute of Micoenee and anoelectonics (ME), Univesity Kebansaan Malaysia (UKM), Bani, Selano, Malaysia 3 Depatent of Electonics and Counication, ndus nstitute of Technoloy and Manaeent, Kanpu, ndia 4 Depatent of Electical, Electonic and Systes Enee, Univesiti Kebansaan Malaysia, Bani, Selano, Malaysia Abstact: n this pape six new ipleentations fo ealiz lossy and lossless active ductos ae pesented. The new topoloies ae obtaed us a newly foulated active block naely, the exta X cuent conveyo tansconductance aplifie (EXCCTA). The desed ounded ducto siulatos (GS) equie only thee ounded passive eleents fo ipleentation which is desiable fo teated cicuit fabication. Moeove, the ductance siulatos ae electonically tunable and fee fo atch equieents. Additionally, two stuctues of univesal filtes ae also poposed. The voltae ode filte is ulti put sle output (MSO) stuctue and uses canonical nube of passive coponents. The cuent ode (CM) filte is a sle put ulti output (SMO) stuctue with ounded passive eleents. The filte stuctues can ealize all five standad filte esponses without any atch conditions and have featues of low/ hih output ipedance, low active and passive sensitivities, tunability, dependent contol of pole fequency and quality facto. The effect of non-idealities on the ducto and filte topoloies ae also analyzed. The siulations ae pefoed 0.8μ paaetes fo TSMC Spice to validate the theoetical pedictions. Expeiental esults us AD844 and LM3700 teated cicuits (Cs) fo the poposed ducto and filte ae also povided to futhe asceta the feasibility of the poposed solutions. Keywods: active ducto; cuent ode; cuent conveyo; filte; tunability zubni bezizubni duktivni siulato te univezalen filte z z novi pilaodljivi aktivni bloko zvleček: Članek pedstavlja šest pieov ealizacije izubnih bez izubnih aktivnih dušilk. ove topoloije upoabljajo nov aktivni blok; eksta X tokovni tanskonduktančni ojačevalnik (EXCCTA). ačtani ozeljeni duktivni siulatoji (GS) zahtevajo le ti ozeljene pasivne eleente so elektonsko nastavljivi te neodvisni od zahtev ujeanja. Dodatno sta pedlaani dve stuktui univezalnea filta. Več vhodni eno izhodni filte v napetostne naču upoablja standadno število pasivnih eleentov. Tokovni filte je eno vhodni več izhodni z ozeljenii eleenti. Filti lahko ealiziajo vseh pet standadnih odzivov bez pilaajanj. ajo nizko/visoko izhodno ipedanco, nizko aktivno pasivno občutljivost, nastavljivost, neodvisno kontolo fekvence faktoja kvalitete. Siulacije so izvedene v 0.8 μ tehnoloiji iz TSMC SPCE za validacijo teoetičnih pedvidevanj. Ekspeientalni ezultati so pidobljeni s upoabo AD844 LM3700 teianih vezij. Ključne besede: aktivna dušilka; tokovni nač; tokovni ojačevalnik; filte; nastavljivost Jounal of Micoelectonics, Electonic Coponents and Mateials Vol. 48, o. (08), 97 3 * Coespond Autho s e-ail: faseehudd03@siswa.uk.edu.y 97 MDEM Society

2 M. Faseehudd et al; nfoacije Mide, Vol. 48, o. (08), 97 3 ntoduction The physical spial ductos suffe fo low ealizable ductance value of the ode of nh [, ], low quality facto, hihe chip aea equieent, excessive losses and susceptibility to pocess vaiations []. These dawbacks ake the unsuitable fo teated cicuit ipleentation. Sce ductos ae evitable coponents iven thei boad spectu of applications active filtes, paasitic cancellation, oscillatos, adio fequency (RF) systes etc. []. The active siulation of ductos whee active devices ae eployed stead of spial ductos to eulated the behavio of passive ductos has becoe popula [-3]. Analo filtes ae an teal pat of alost evey electonic syste and so thei synthesis and developent eas an eve evolv field. Aon vaious filte stuctues univesal filtes (UFs) ae the ost vesatile as all the standad filte functions can be deived fo the[6-9]. They seve as standalone solution to any filte needs. The UFs fd applications phase locked loop FM steeo deodulato, telephone decode, speech pocess etc.[7-8]. The cuent ode active eleents ae the best choice fo ducto and filte synthesis, own to thei lae dynaic ane, eat leaity, wide bandwidth, hihe slew ate and excellent low voltae pefoance copaed to thei voltae ode countepats [6-7]. ueous cuent ode active blocks have been eployed fo ductance siulation and filte des like second eneation cuent conveyo (CC) [4], diffeential voltae cuent conveyo (DVC- C) [], dual X cuent conveyo (DXCC) [], cuent conveyo tansconductance aplifie (CCTA) [8], diffeential cuent conveyo (DCC) [], diffeential diffeence cuent conveyo (DDCC) [], fully diffeential cuent conveyo (FDCC) [34], voltae diffeenc cuent conveyo (VDCC) [5], cuent feedback opeational aplifie (CFOA) [3], odified cuent feedback opeational aplifie (MCFOA) [8], vet cuent feedback opeational aplifie (CFOA-) [5], cuent diffeenc tansconductance aplifie (CDTA) [37] etc. The GS can be cateoized based on any citeia like nube of active devices used, passive coponent count, lossy/lossless type ductance ealization, use of ounded passive eleents, featue of built tunability, capability of active eleent ealization us the off the shelf teated cicuits (Cs) like AD844 etc. The GS pesented [4, -3] equie oe than one active eleent fo ductance siulation. The GS ipleentations pesented [4, -3, 5,, 3] equie oe than thee passive eleents. Althouh cuent fabication technoloy it is feasible to ipleent float capacito but use of ounded capacito has heent advantaes tes noise cancelation, chip aea and paasitic eduction. The GS ipleentations [5, 0,, 4-7, 9, -4] akes use of one o oe float capacitos. Tunability is one of the ajo des equieents today s ixed ode systes. The GS cicuits [, 4-5, -4] did not have built tun capability. A thoouh copaison of the exeplay ductance topoloies available the liteatue with the poposed lossy/lossless GS topoloies is iven Table. The liteatue suvey eveals that the daw backs of the ajoity of the pesented ducto siulatos ae (i) no povision fo on chip tunability (ii) use of oe than one active eleent (iii) use of float capacito (iv) excessive use of passive eleents (v) passive coponents atch equent. n this eseach a new active block the exta X cuent conveyo tansconductance aplifie (EXCCTA) is utilized des six topoloies of lossy/lossless ductance siulatos. All the desed GS eploy only a sle active eleent and two/thee ounded passive eleents fo ipleentation. o atch is equied fo ipleentation and ductance can be easily tuned via bias cuent of the tansconducto. Futhe oe, two iu coponent VM and CM ode univesal filtes ae poposed. The filtes stuctues ae chaacteized by follow attibutes (i) use of iu nube of active blocks and passive coponents (ii) built tunability (iii) use of ounded passive eleents (iv) povision fo dependent contol of pole fequency and quality facto (v) avalibility of output at low ipedance case of VM filte and hih ipedance CM filte. The siulation ae pefoed us 0.8μ paaetes fo TSMC Spice to validate the theoetical fds. Additionally, an expeiental study of pue ducto and VM SMO filte is conducted us AD844 and LM3700 Cs. The easued esults ae copaed with the ideal ones. Exta X cuent conveyo tansconductance aplifie (EXCCTA) The poposed Exta X cuent conveyo tansconductance aplifie (EXCCTA) is functionally a connection of exta x cuent conveyo (EXCC) [6] and opeational tansconductance aplifie (OTA) [30]. The new block caies featues of CC and tunable OTA a sle teated cicuit stuctue. The Voltae cuent chaacteistics of the developed EXCCTA ae iven atix Equation and the block diaa is pesented Fi.. The block is found to be suitable fo ipleent iu coponent filtes and ducto siulatos as it povides two dependent cuent put X teals and an heent tunable stuctue. 98

3 M. Faseehudd et al; nfoacije Mide, Vol. 48, o. (08), 97 3 Table : Copaison of exeplay active ductos with the poposed ones Refeence o. of Active Devices Used o. of Passive Eleents Capacito Float Match Condition nbuilt Tunability [] Fi. 5 MDO-DDCC () 3 o Yes o [4] CC (3) 4 o o o [5] CFOA () 3 Yes o o [0] VDBA () Yes o Yes [] DCC () 3 o Yes o [] OTRA () 5 Yes Yes o [3] CFOA () 4 o Yes o [4] DCC () 3 Yes o o [5] OTRA () 4 Yes o o [6] MCC () 3 Yes Yes o [7] GVCC () 3 Yes Yes o [8] MCFOA () 3 o o o [9] CFOA () 3 Yes o o [0] CC ()+Cuent Followe 3 o o o () [] PFT () 5 Yes Yes o [] DXCC () 3 Yes Yes o [3] OTRA ()+Voltae Buffe () 4 Yes Yes o [4] CFOA () 3 Yes o o Fi. 3 Poposed GS-(-, 4-6) EXCCTA () 3 o o Yes Fi. 3 Poposed GS-3 EXCCTA () o o Yes () The CMOS ipleentation of EXCCTA is pesented Fi.. t is a 9 teal active eleent. The fist stae consists of EXCC tansistos (M-M8). The voltae applied at Y node appeas at XP and X nodes. The cuent put at X p node is tansfeed to nodes Z p+ and Z p-. n the sae way the put cuent fo X node is tansfeed to Z + and Z -. The cuent follow Z and Z p teals ae dependent of each othe. The class AB output stae is selected fo the ipleentation as it is suitable fo low voltae opeation [6]. The second stae is coposed of OTA. The tansconductance is ealized us tansistos (M9-M40).The output cuent of the tans-conducto depends on the voltae Z p+. Assu satuation eion opeation fo all tansistos and equal W/L atio fo tansistos M9 and M30 the output cuent o of the OTA is iven by Equation. ( ) ( )( ) V K V () O i ZP+ Bias i ZP+ Fiue : Block diaa of EXCCTA Whee, the tansconductance paaete K i µc 0x W/L, (i9, 30) W is the effective channel width, L is the effective lenth of the channel, C ox is the ate oxide capacitance pe unit aea and µ is the caie obility. t is evident fo () that the tansconductance can be tuned by the bias cuent thus ipat tunability to the stuctue. The ost citical paaetes of the EXCCTA can be coputed by follow the analysis pocedue iven 99

4 M. Faseehudd et al; nfoacije Mide, Vol. 48, o. (08), 97 3 [6]. The voltae tansfe atio between Y and X p node can be deived as iven Equation 3. α V XP P V Y p ( ) 4 0 p ( ) 4 Whee 0p 03 // 07, 0 is the output esistance of the MOS tansisto and is the tansconductance of the MOS tansisto. n the siila way the voltae tansfe between Y and X can be obtaed as iven below. The cuent tansfe atios β p and β depend on the load connected at X and Z teals. This is a sliht daw back but if the value of the load connected is less than MOS tansisto esistance than an accuate tansfe is achieved. The cuent tansfe atios ae deived as iven Equation 5-6. V α XP V Y (4) 3 (3) R XP R X ( + ) 0 ( + ) 0p p ( + ) 0n 9 8 Whee 0p 03 // 07 and Whee 0n 0 // 06 The Z and O nodes ipedances ae found to be hih iven by paallel output esistance of MOS tansistos. R R ZP Z (7) (8) (9) (0) (5) R Z () + Z 0 4 β X (6) The exta tansisto count should not be consideed a disadvantae sce the unused Z teal can be eoved educ the tansisto count. The X teal esistance of X and X p teal is calculated as iven Equations 7-8. Fiue : CMOS pleentation of EXCCTA 00

5 M. Faseehudd et al; nfoacije Mide, Vol. 48, o. (08), 97 3 GS- (a) GS- (b) GS-3 (c) GS-4 (d) GS-5 (e) GS-6 (f ) Fiue 3: The poposed lossless and Lossy ducto siulatos Table : The ipedance elations of the poposed active ductos Siulato pedance Realized nductance ( Leq ) Equivalent Resistance ( Req ) Type Tunability Match Requieent GS- Leq - Pue Yes o GS- Leq - Pue Yes o GS-3 Leq - Pue Yes o GS-4 + Leq Req SCRR (R +R ) SCRR (R +R ) SCR SCR R L paallel with R Yes o R -L paallel with -R Yes o R R L seies with R Yes o GS-5 GS-6 Leq Req Leq + Req SCR SCR 0

6 M. Faseehudd et al; nfoacije Mide, Vol. 48, o. (08), The poposed ducto siulatos and univesal filtes The poposed ducto siulatos us a sle EXC- CTA and ounded passive eleents ae shown Fi. 3(a-f). A siple analysis of the cicuits eveals that the GS- to GS-3 ealize pue ductance. The GS-4 and GS-5 ipleents lossy paallel RL ductos. t is notewothy that the value of the paallel esisto GS-4/5 can be set us esisto R dependent of the ductance value that is set by R and which is an advantae. Fally, the GS-6 ealizes lossy seies RL ducto. The seies esistance GS-6 can be alteed by chan R without affect the ductance. All the pesented ducto siulatos use only ounded passive eleents which is advantaeous fo teated cicuit ipleentation. The use of ounded capacito saves chip aea and also iizes noise effects. Futheoe, all the siulatos ae fee fo coponents atch constats and tunable via bias cuent of the OTA. The ipedance elations of the ductos ae iven Table. ext, the poposed VM univesal filte is pesented Fi. 4. The filte stuctue is obtaed by odify the poposed seies ducto GS-6. The SMO filte uses canonical nube of passive coponents and can ealize low pass (LP), hih pass (HP), band pass (BP), notch pass (P) and all pass (AP) esponses. Aon the two capacitos one is always ounded which is an advantae. The featues of the filte cludes use of sle active block, low output ipedance, tunability and povision fo dependent contol of quality facto and pole fequency. The tansfe function, expession of -3dB cutoff fequency, quality facto and bandwidth of the filte ae iven Equations -4. The output can be tapped fo Y teal o low ipedance X teal. The cobation of filte put odes and applied put voltaes fo ealiz all the five filte esponses is suaized Table 3. V out SCR V+ V + V3 R CR + S + R () ω o (3) CC R C Q R CR (4) Table 3: The activation sequence of the filte Response nputs V V V 3 LP 0 0 HP 0 0 BP 0 0 P 0 AP - The MSO CM filte is shown Fi. 5. The filte eploys thee ounded passive eleents and can ealize all LP, BP and HP esponses siultaneously. The AP esponse can be obtaed by su the HP, BP and LP esponses. All the esponses ae available at hih ipedance nodes except the HP esponse which is available thouh the capacito. The HP cuent can be sensed us a siple cuent followe. The featues of the filte cludes use of sle active eleent, ounded passive eleents and tunability. The tansfe functions fo five filte esponses ae iven Equations 5(a)-5(e). Fiue 5: The poposed CM SMO filte Fiue 4: The poposed VM ode MSO filte LP + SC R + (5a) 0

7 M. Faseehudd et al; nfoacije Mide, Vol. 48, o. (08), 97 3 f HP BP P AP o Q + SC R + SCR + SC R + + SC R + + SC R + SCR+ (5b) (5c) (5d) (5e) π CC R (6) C CR (7) 4 on-deal analysis n this section the on-idealities of the EXCCTA ae consideed and thei fluence on the poposed ductos and filte cicuits is analyzed. A siplified non-ideal odel of EXCCTA is pesented Fi. 6 fo analysis. The ost ipotant aspects contibut to the deviations fequency pefoance ae the non-ideal fequency dependent cuent and voltae tansfe as, α i (s) and β i (s) espectively, whee α i (s) α 0i /( + s/ω αi ) and β i (s) β 0i /( + s/ω βi ). deally, α 0i β 0i and ω αi ω βi. Anothe ipotant pefoance paaete is the associated paasitics at the X nodes which can be quantified as Z XP Z X R X(,P) + sl X(,P). The paasitic esistance and capacitance associated with the Y and Z nodes ae R ZP, R Z and R Y. While the associated capacitances ae C ZP, C Z and C Y. Thee ideal values be equal to zeo.the γ epesents the tansconductance tansfe accuacy of the OTA, while R o and C o ae paasitics at the OTA output. f the effect of the non-ideal as is consideed the V- elations of the EXCCTA will be odified to Y 0, V XP β p (s)v Y, V X β (s)v Y, ZP+ α p (s) XP, ZP- α p (s) XP, Z+ α (s) X, Z- α (s) X, 0+ γ V ZP+, 0- γ V ZP+. The odified expessions of ductance L eq of the active ducto siulatos tak to account the nonideal cuent and voltae tansfe as of the EXCCTA is iven Table 4. Table 4: Modified ductance L eq of the active ducto siulatos fo non-ideal case GS- GS- GS-3 L L eq eq L SCRR γ α β R α β R ( + ) P P SCRR γ α β R α β R eq ( + ) P P SCR γ α β α β ( + ) P P GS-4 ' γ αpβp αβ Leq + SC R R GS-5 GS-6 L L eq γαpβp αβ SC R R SC R α β R eq + αβγ P P γ R The expessions of tansfe function, pole fequency and quality facto clud the non-ideal as fo the VM and CM filtes ae pesented Equations 8-3, espectively. V f out o Q α SC R V + V + αγ P V 3 γ γr αβcr + S + αβ P P γ γr (8) αβ P P (9) π CC R α β αβγc P P R (0) CR LP HP γ γ α β + SC R + α β γ ' + SC R + α β ' (a) (b) 03

8 M. Faseehudd et al; nfoacije Mide, Vol. 48, o. (08), 97 3 f γ γ SCR BP (c) ' + SCR+ αβ γ o Q ' γαβ () π CC R α β C γ C R ' (3) The sensitivity analysis of both the VM and CM univesal filtes is also caied out. The Equations 4-6 ive the active and passive sensitivities of the VM filte and Equations 7-8 pesent the sensitivities of the CM filte. ω ω ω ω ω ω ω Sα S P β S S P γ S C S C S R (4) Q Q Q S S S (5) R β α Q Q Q Q Q Q Q Sα S P β S P C S γ S S C S R (6) S S S S S S S ω ω ω ω ω ω ω ' β γ C α C R (7) S S S S S S S Q Q Q Q Q Q Q ' β C γ α C R (8) t can be seen that the active and passive sensitivities ae not eate than one which is desiable. t was desed 0.8μ paaetes fo TSMC. The cicuit was siulated spice to easue the ipotant des etics. The aspect atios of the tansistos ae iven Table 5. The supply voltaes ae kept at V DD -V SS 0.9V. The bias cuent was fixed at bias 00μA. The bias cuent of OTA was set at 60μA which esulted a tansconductance of 0.334S. The pefoance paaetes of the EXCCTA ae suaised Table 6. Table 5: Aspect atios of the tansistos Tansisto Width (W μ) Lenth(L μ) M- M M5- M M9- M M4- M M9-M M33-M The opeation of the ducto siulatos is evaluated next. The GS- ducto siulato is tested, the passive coponent values ae selected as R R 4kΩ, C Fiue 7: Manitude and phase esponse of GS- Fiue 6: on-ideal odel of EXCCTA 5 Siulation esults n ode to establish the wokability of the poposed exta X cuent conveyo tansconductance aplifie (EXCCTA). Fiue 8: Monte Calo esult of GS-fo 0% deviation capacitance value 04

9 M. Faseehudd et al; nfoacije Mide, Vol. 48, o. (08), 97 3 Table 6: Pefoance etics of EXCCTA Fi. 6 Voltae Ga.005 Cuent Ga ( ZP+ / XP), ( Z + / X ), Cuent Ga( ZP / XP), ( Z / X ), Voltae Tansfe Bandwidth MHz Cuent Tansfe Bandwidth ( Z, P+ Z+) MHz Cuent Tansfe Bandwidth ( ZP, Z ) 7. MHz DC Voltae Rane ±650V DC Cuent Rane ( ZP, Z ) ±40μA DC Cuent Rane ( ZP, Z ) ±60μA X ode pedance (RX) Ω X ode nductance (LX).85μH ( ZP, Z ) ode pedance kΩ ( Z, Z ) ode pedance kΩ P 50pF and bias 60μA esult the ductance of L e 0.3H. The anitude esponse of the ideal and siulated ducto is iven Fi. 7. To study the effect of pocess vaiability on the pefoance of the ducto siulato Monte Calo analysis is pefoed fo 0% vaiation the capacitance value with Gaussian distibution fo 00 uns. t can be feed fo Fi. 8 that thee is only sliht deviation the ductance value. To futhe asceta the ducto s pefoance tansient analysis is pefoed to veify the phase diffeence between cuent and voltae wavefos. The phase diffeence was found to be 87. o as iven Fi. 9 which futhe veifies the behaviou of the synthetic ducto. Fiue 0: Manitude esponse of GS-3 6 Applications of the poposed ductance siulatos To exae the applicability and feasibility of the poposed ducto siulatos pactical applications they ae utilized nueous applications. The pue ducto siulato GS- is utilized the des of thid ode Buttewoth ladde filte [5] as shown Fi.. The tansfe function of the filte is iven Equation 9. The passive eleents of the filte ae selected as C C 0. nf, R s kω, R L kω and L 60 uh. The esistos R s and R L ae the souce and load esistances, espectively. The ducto the passive ipleentation is eplaced by the active GS- Fi 3(a). The coponents of GS- ae selected as R R 4kΩ and C 0 pf to et L eq 60uH fo the active ducto. The deal and siulated filte esponse ae iven Fi.. t can be deduced that the ideal and siulated cuves bea close eseblance. A cuent ode ultifunction filte [7] is also desed us the GS-. The paallel passive RLC filte is shown Fi. 3. The filte is desed fo -3dB cutoff fequency of.054 MHz by select coponents values as C f 0pF, R f 0kΩ and L eq 0.6 H. The pas- Fiue 9: Tansient analysis of GS- The paallel ducto is now desed. The value of the passive eleents ae selected as R R 4kΩ, C 50pF and bias 60μA esult the ductance of L eq 0.3H paallel with R eq 4kΩ. t is to be noted that by appopiately select the value of R the value of paallel esisto can be set without affect the ductance. The anitude esponse of GS-3 is iven Fi. 0. Fiue : The thid ode Buttewoth filte (9) 05

10 M. Faseehudd et al; nfoacije Mide, Vol. 48, o. (08), 97 3 The two passive eleents based ducto siulato GS-3 is utilized the des of voltae ode second ode hih pass filte as pesented Fi. 5. The tansfe function and expession fo fequency of the filte ae iven Equations 3-3. The passive eleent values fo the passive filte ae selected as C f 80 pf, R f kω and L eq 0.6 H which coesponds to -3dB cutoff fequency of kHz. To ealize the equied ductance the passive eleents of the GS-3 Fi. 3(c) ae chosen to be R 4kΩ and C 00 pf to et L0.6H fo GS-3. The ideal and siulated esponse of the filte ae iven Fi. 6. Fiue : The esponse of thid ode Buttewoth filte Fiue 5: Voltae ode HP filte Fiue 3: Cuent ode ulti function filte sive ducto the filte is eplaced by active ducto GS-. The coponents of GS- Fi. 3(a) ae selected as R R 4kΩ and C 00 pf to et L eq 0.6 H. The ideal and siulated fequency esponse of the filte is iven Fi. 4. V V f out o S S + S + CR L C f f eq f (3) (3) π L C eq f Fiue 6: Fequency esponse of Voltae ode filte Fiue 4: Fequency esponse of cuent ode ulti function filte f o (30) π L C eq f ow the lossy paallel RL ducto GS-4 is used the des of second ode cuent ode HP filte. The passive pototype of the filte is pesented Fi. 7 and the tansfe function and pole fequency is iven Equations The filte is desed fo -3dB cutoff fequency of khz by choos C f 50 pf, R eq 4kΩ and L eq 0.6 H. The paallel R eq L eq the passive pototype ae eplaced by paallel RL active ducto siulato GS-4 Fi.3 (d). The GS-4 is desed with R R 4kΩ and C 00 pf. The ideal and siulated values ae iven Fi. 8. To test the sal pocess 06

11 M. Faseehudd et al; nfoacije Mide, Vol. 48, o. (08), 97 3 capability of the filte tansient analysis is pefoed. A susoidal cuent sal with 80μA p-p is applied to both filtes with ideal passive eleents and filte with siulated RL. The esults ae shown Fi. 9. t is clea that the ideal and siulated cuves follow each othe closely veify the coect function of the GS-4 siulato. out S + S fo S + C f R f Leq C f (33) π Leq C f (34) 7 Veification of the Poposed Univesal Filtes The poposed MSO VM filte is tested. The filte is desed fo -3dB cutoff fequency of.054mhz by select C 0 pf, C 0 pf, R 5kΩ and R 5kΩ. The esult quality facto of the filte is found to be.9. The esponse of the filte is pesented Fi. 0. The esponse of the AP filte is iven Fi.. The siulated pole fequency of the is found to be.998mhz which tanslates to 3.% eo this is due to paasitic eleents discussed above. To vestiate the sal pocess capabilities of the filte tansient analysis is also pefoed fo the BP confiuation. t can be feed fo the Fi. that the filte pefos well. The total haonic distotion(thd) of the filte fo band pass confiuation is also calculated which is found to be pefectly with acceptable liit fo wide put voltae ane as shown Fi. 3. The THD eas with % till 00V put voltae. Fiue 7: Cuent ode hih pass filte Fiue 0: Siulated chaacteistics of the MSO VM filte Fiue 8: Fequency esponse of Cuent ode hih pass filte Fiue : Siulated chaacteistics of the MSO VM AP filte Fiue 9: Tansient analysis of Cuent ode hih pass filte 07

12 M. Faseehudd et al; nfoacije Mide, Vol. 48, o. (08), 97 3 The effect of pocess vaiations on the poposed filte is studied by pefo Monte Calo analysis of the HP esponse of the filte. The analysis is caied out fo 0% deviation the two capacito values adopt the Gaussian distibution. The esult fo 50 uns iven Fi. 4 shows that the filte functions well with ute deviations that can be accoodated by adjust the bias cuent of the OTA fo pecise fequency contol. Fiue : Tansient analysis of the band pass filte Fiue 3: Total haonic distotion of the band pass filte confiuation Fiue 4: Monte Calo analysis of the HP filte fo 0% deviation capacitance values Table 7: Copaison of MSO filtes available the liteatue with the poposed filte S. o. Type of Filte [9] MSO [30] MSO [3] MSO [3] MMO [33] MSO [34] MSO [35] MSO [36] MSO [37] MMO [38] MSO Poposed MSO Active Block Used(o.) o. of R+C o. of ounded C+R Match Condition Electonic Tunability nvet nput eeded CC+ (3) o o o (Except fo AP) DVCC (3) o (Except fo AP) Low output pedance o o o o CCTA () o Yes o o DVCC () Yes o o o DOCCC () o Yes o (Except fo AP) VD-DBA o Yes o o CDBA () Yes o o Yes DDCC () + + o o o o FDCC () 3+ + o o o (Except fo AP) DDCC (3) + + o o o Yes EXCCTA () + +0 o Yes o (Except fo AP) o o Yes 08

13 M. Faseehudd et al; nfoacije Mide, Vol. 48, o. (08), 97 3 Fiue 5: Siulated chaacteistics of the MSO VM LP filte fo diffeent bias cuents Fiue 7: Siulated chaacteistics of the SMO CM filte Fiue 6: Siulated chaacteistics of the MSO VM BP filte fo diffeent quality factos Tunability is an ipotance featue of filtes [8], this attibute enables a filte to be useful at diffeent fequencies without equi any alteation the passive coponents values. The pole fequency of the poposed filte can be adjusted by vay the bias cuent of the OTA. The LP Fiue 8: Siulated chaacteistics of the SMO CM AP filte esponse of the filte is plotted fo diffeent bias cuents as shown Fi. 5. t can be seen fo the fiue that the bias cuent slihtly effects the quality facto of the filte as can be deduced fo Equations (3-4). To ealize a unity quality facto the esistance R should be adjusted accod- Table 8: Copaison of CM SMO filtes available the liteatue with the poposed filte S. o. Type of Filte [39] SMO Fi. 3 (CM) [40] SMO (CM) [4] SMO (CM) [4] SMO (CM) [43] SMO (CM) Poposed SMO (CM) Active Block Used(o.) o. of R+C o. of ounded C+R Match Condition Electonic Tunability Hih output pedance CBTA () + + o Yes o CDTA () + +0 o Yes o DV-DXCC () + + o o Yes UCC (3) + + o o Yes CCC (3) o Yes Yes EXCCTA () + + o Yes Yes 09

14 M. Faseehudd et al; nfoacije Mide, Vol. 48, o. (08), 97 3 ly. The quality facto of the poposed filte can also be tuned dependent of the pole fequency by vay the esistance R as can be seen Fiue 6 which ives the plot of Q fo diffeent values of esistance R. A copaison is povided Table 7 to copae the poposed VM MSO filte with the othe state of the at filte stuctues. Lastly, the CM SMO filte is validate by des it fo -3dB cutoff fequency of.04mhz by select C 0 pf, C 0 pf, R 3.6 kω and OTA bias cuent of 50μA. The fequency esponse of the filte is iven Fi. 7 and the AP esponse is shown Fi. 8 The filte is copaed with othe exeplay SMO filte topoloies to hihliht its advantaes as shown Table 8. Fiue 30: The expeiental esult of the ducto siulato 8 Expeiental Results The EXCCTA can be easily ipleented us coecially available teated cicuits AD844 and LM3700. The possible ipleentation of GS- us only two AD844 and one LM3700 C is shown Fi. 9. The Cs ae supplied with a bias voltae of ±0V, the bias of the OTA is fixed at 37µA. The passive coponents values ae chosen to be R R kω and C 0 nf esult the ductance of L67μH. To test the cicuit a tianula wavefo with V p-p at 7kHz is applied thouh R and R 3 to convet it to coespond put tianula cuent. A squae wave fo is obtaed acoss the ducto. The oscilloscope output is shown Fi. 30 which validates the coect function of the active ducto. (a) (b) Fiue 3: Expeiental setup of the VM filte fo the coecially available Cs (a) Block Diaa (b) Bead boad ipleentation Fiue 9: pleentation of the GS- fo the coecially available Cs To futhe validate the VM filte it is ipleented on beadboad us AD844 and LM3700 Cs. The filte ipleentation is iven Fi. 3 (a-b). The filte is desed fo -3dB fequency of kHz by select passive coponents values equal to R R kω, C C nf and bias 3.5µA. The ideal and expeientally calculated esponse of the filte is pesented Fi. 3. The easued fequency of the filte is found to be 3kHz lead to an eo of 6.46%, this discepancy aises due to non-idealities pesent the EXCCTA and also due to the paasitics toduced by connect leads and beadboad, nonetheless it veifies the pactical feasibility of the poposed VM filte. 0

15 M. Faseehudd et al; nfoacije Mide, Vol. 48, o. (08), 97 3 sal of 60V p-p at fequencies of khz, 3kHz and 600kHz. The filte output obtaed on the oscilloscope fo LP confiuation is pesented Fi. 33 (a-c). 9 Conclusion Fiue 3: The ideal and expeiental esults of the VM MSO filte (a) (b) n this eseach, a new active eleent naely EXCCTA is poposed. The EXCCTA is used to des six topoloies of lossy and lossless active ductos. Additionally, to futhe elaboate its vesatility two univesal VM and CM filte stuctues eploy a sle EXCCTA ae also poposed. The ducto siulatos ake use of sle EXCCTA, ounded passive eleents, equies no passive coponents atch and ae pefectly tunable. The voltae ode filte is obtaed by slihtly odify the poposed seies ducto. The VM filte akes use of canonical nube of passive eleents and has low output ipedance. The CM filte is SMO type and utilize only thee ounded passive eleents fo ipleentation. Both the poposed filte stuctues enjoy low sensitivities, built tunability and othoonal contol of quality facto and pole fequency. The non-ideal analysis of the ducto siulatos and filte stuctues is also pefoed. The siulations ae pefoed 0.8μ paaetes fo TSMC to veify the theoetical analysis. Expeiental esults fo pue ducto and SMO VM filte ae also cluded to substantiate the theoetical fds. 0 Acknowledeent The authos atefully acknowlede the suppot povided by UKM tenal ant (GUP-05-0) fo this study. (c) Fiue 33: Tie doa analysis of LP esponse (a) khz (b)3 khz (c) 600 khz The expeiental tie doa analysis of the filte is also pefoed by excit it with a susoidal put Refeence. İbahi, M. A., Maei, S., Yüce, E., Heencsa,., & Koton, J. (0). Lossy/lossless float/ounded ductance siulation us one DDCC.. Yuce, E. (006). Float ductance, FDR and capacitance siulation cicuit eploy only ounded passive eleents. ntenational Jounal of Electonics, 93(0), Met, B., & Cicekolu, O. (006). A novel float lossy ductance ealization topoloy with Cs us cuent conveyos. EEE Tansactions On Cicuits And Systes : Expess Biefs, 53(6), Cicekolu, M. O. (998). Active siulation of ounded ductos with CC+ s and ounded passive eleents. ntenational Jounal of Electonics, 85(4),

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