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1 Rev. 6 5 December 26 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. use use (Internet) sales.addresses@ use salesaddresses@nxp.com ( ) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - Koninklijke Philips Electronics N.V. (year). All rights reserved - is replaced with: - NXP B.V. (year). All rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office via or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors

2 FEATURES High power gain Low intermodulation distortion Easy power control Good thermal stability Withstands full load mismatch. PINNING - SOT121B PIN 1 drain 2 source 3 gate 4 source DESCRIPTION APPLICATIONS Industrial and military applications in the HF/VHF frequency range. DESCRIPTION 1 4 Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (V GS ) information is provided for matched pair applications. Refer to the General section of the handbook for further information. g d s CAUTION 2 3 MAM267 This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-68, SNW-FQ-32A, and SNW-FQ-32B. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at T h = 25 C in a common source test circuit. MODE OF OPERATION f (MHz) V DS (V) P L (W) SSB, class-ab (PEP) >17 >35 < 3 < 3 CW, class-b typ. 14 typ. 7 G p η D (%) d 3 d 5 Product and environmental safety - toxic materials WARNING This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Rev. 6-5 December 26 2 of 15

3 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 6134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage 65 V V GS gate-source voltage ±2 V I D drain current (DC) 25 A P tot total power dissipation T mb 25 C 22 W T stg storage temperature C T j junction temperature 2 C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R th j-mb thermal resistance from junction to mounting base.8 K/W R th mb-h thermal resistance from mounting base to heatsink.2 K/W 1 2 MRA94 3 MGP49 I D (A) P tot (W) 2 (1) 1 (1) (2) (2) V DS (V) T h ( C) (1) Current is this area may be limited by R DSon. (2) T mb =25 C. Fig.2 DC SOAR. (1) Short-time operation during mismatch. (2) Continuous operation. Fig.3 Power derating curves. Rev. 6-5 December 26 3 of 15

4 CHARACTERISTICS T j = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS drain-source breakdown voltage I D = 1 ma; V GS = 65 V I DSS drain-source leakage current V GS = ; V DS =28V 5 ma I GSS gate-source leakage current V GS = ±2 V; V DS = 1 µa V GSth gate-source threshold voltage I D = 2 ma; V DS =1V V V GS gate-source voltage difference of matched pairs I D = 1 ma; V DS =1V 1 mv g fs forward transconductance I D = 8 A; V DS =1V S R DSon drain-source on-state resistance I D = 8 A; V GS =1V.1.15 Ω I DSX on-state drain current V GS = 1 V; V DS =1V 37 A C is input capacitance V GS = ; V DS =28V; f=1mhz 45 pf C os output capacitance V GS = ; V DS =28V; f=1mhz 36 pf C rs feedback capacitance V GS = ; V DS =28V; f=1mhz 55 pf V GS group indicator GROUP LIMITS (V) GROUP LIMITS (V) MIN. MAX. MIN. MAX. A O B P C Q D R E S F T G U H V J W K X L Y M Z N Rev. 6-5 December 26 4 of 15

5 T.C. (mv/k) 1 MGP5 6 I D (A) MGP I D (A) V GS (V) V DS = 28 V; valid for T h =25to7 C. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. V DS =1V. Fig.5 Drain current as a function of gate-source voltage; typical values. 17 R DSon (mω) MGP52 14 C (pf) MRA C is C os T j ( C) V DS (V) I D = 8 A; V GS =1V. V GS = ; f = 1 MHz. Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values. Fig.7 Input and output capacitance as functions of drain-source voltage; typical values. Rev. 6-5 December 26 5 of 15

6 5 C rs (pf) 4 MRA V DS (V) V GS = ; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION FOR CLASS-AB OPERATION RF performance in SSB operation in a common source class-ab circuit. T h =25 C; R th mb-h =.2 K/W; R GS = 9.8 Ω; f 1 = 28. MHz; f 2 = 28.1 MHz; unless otherwise specified. P L (W) f (MHz) V DS (V) I DQ (A) G p η D (%) d 3 (note 2) d 5 (note 2) 2 to 15 (PEP) >17 typ. 19 >35 typ. 4 < 3 typ. 34 < 3 typ. 4 Notes 1. Optimum load impedance: j Ω. 2. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased by 6 db. Ruggedness in class-ab operation The is capable of withstanding a load mismatch corresponding to VSWR = 5:1 through all phases under the following conditions: V DS = 28 V; f = 28 MHz at rated load power. Rev. 6-5 December 26 6 of 15

7 3 MGP53 6 MGP54 G p η D (%) P L (W) PEP 1 2 P L (W) PEP Class-AB operation; V DS = 28 V; I DQ = 1 A; R GS = 9.8 Ω; f 1 = 28. MHz; f 2 = 28.1 MHz. Class-AB operation; V DS = 28 V; I DQ =1A; R GS = 9.8 Ω; f 1 = 28. MHz; f 2 = 28.1 MHz. Fig.9 Power gain as a function of load power; typical values. Fig.1 Efficiency as a function of load power; typical values. 2 d 3 MGP55 2 d 5 MGP P L (W) PEP P L (W) PEP Class-AB operation; V DS = 28 V; I DQ =1A; R GS = 9.8 Ω; f 1 = 28. MHz; f 2 = 28.1 MHz. Class-AB operation; V DS = 28 V; I DQ =1A; R GS = 9.8 Ω; f 1 = 28. MHz; f 2 = 28.1 MHz. Fig.11 Third order intermodulation distortion as a function of load power; typical values. Fig.12 Fifth order intermodulation distortion as a function of load power; typical values. Rev. 6-5 December 26 7 of 15

8 handbook, full pagewidth input 5 Ω C1 C2 L1 L2 C8 D.U.T. L3 L7 C9 C1 C11 C12 C14 C15 output 5 Ω C3 R1 R2 C4 L4 C13 R3 R4 C5 R5 C6 L5 L6 +V G C7 +V D MGP57 f = 28 MHz. Fig.13 Test circuit for class-ab operation. Rev. 6-5 December 26 8 of 15

9 List of components (see Fig 13). Notes COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C3, C13, C14 film dielectric trimmer 7 to 1 pf C2, C8, C9 multilayer ceramic chip capacitor; note 1 75 pf C4, C5 multilayer ceramic chip capacitor 1 nf C6 multilayer ceramic chip capacitors in parallel C7 electrolytic capacitor 2.2 µf, 63 V C1 multilayer ceramic chip capacitor; note 1 C11, C12 multilayer ceramic chip capacitor; note 1 C15 L1 multilayer ceramic chip capacitor; note 1 6 turns enamelled.7 mm copper wire 3 1 nf pf 15 pf 24 pf 145 nh length 5 mm; int. dia. 6 mm; leads 2 5mm L2, L3 stripline; note Ω length 13 6mm L4 4 turns enamelled 1.5 mm copper wire L5, L6 grade 3B Ferroxcube wideband HF choke L7 3 turns enamelled 2.2 mm copper wire 148 nh length 8 mm; int. dia. 1 mm; leads 2 5mm 79 nh length 8 mm; int. dia. 8 mm; leads 2 5mm 1. American Technical Ceramics (ATC) capacitor, type 1B or other capacitor of the same quality R1, R2 1 W metal film resistor 19.6 Ω R3.4 W metal film resistor 1 kω R4.4 W metal film resistor 1 MΩ R5 1 W metal film resistor 1 Ω The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε r = 2.2), thickness 1.6 mm. Rev. 6-5 December 26 9 of 15

10 3 MGP58 1 MGP59 G P Z i (Ω) 2 5 r i 1 x i f (MHz) f (MHz) 3 Class-AB operation; V DS = 28 V; I DQ =1A; R GS = 6.25 Ω; P L = 15 W (PEP); R L = 2.1 Ω. Class-AB operation; V DS = 28 V; I DQ =1A; R GS = 6.25 Ω; P L = 15 W (PEP); R L = 2.1 Ω. Fig.14 Power gain as a function of frequency; typical values. Fig.15 Input impedance as a function of frequency (series components); typical values. 4 MGP61 3 MGP62 Z i (Ω) Z L (Ω) 2 r i 2 R L x i 1 2 X L f (MHz) f (MHz) Class-B operation; V DS =28V;I DQ =.2 A; R GS =15Ω; P L = 15 W. Fig.16 Input impedance as a function of frequency (series components); typical values. Class-B operation; V DS = 28 V; I DQ =.2 A; R GS =15Ω; P L = 15 W. Fig.17 Load impedance as a function of frequency (series components); typical values. Rev. 6-5 December 26 1 of 15

11 3 MGP6 G p f (MHz) Class-B operation; V DS = 28 V; I DQ =.2 A; R GS =15Ω; P L = 15 W. Fig.18 Power gain as a function of frequency; typical values. Rev. 6-5 December of 15

12 scattering parameters V DS = 28 V; I D = 1 ma; note 1 Note f (MHz) s 11 s 21 s 12 s 22 s 11 Φ s 21 Φ s 12 Φ s 22 Φ For more extensive S-parameters see internet: Rev. 6-5 December of 15

13 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT121B D A F D 1 q U 1 C B H c b α 4 3 w 2 M C M A p U 2 U 3 w 1 M A M B M 1 2 H Q 5 1 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) scale UNIT A b c D D 1 F H p Q q U 1 U 2 U 3 w 1 w 2 α mm inches OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT121B Rev. 6-5 December of 15

14 Legal information Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For additional information, please visit: For sales office addresses, send an to: salesaddresses@nxp.com Rev. 6-5 December of 15

15 Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes _ Product data sheet - _5 Modifications: Correction made to page 9 List of components _ Product data sheet - _4 _ _3 ( ) _ _CNV_2 ( ) _CNV_2 ( xxxxx) Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V. 26. All rights reserved. For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com Date of release: 5 December 26 Document identifier: _6 Rev. 6-5 December of 15

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