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1 Rev. 4 5 January 27 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. use use (Internet) sales.addresses@ use salesaddresses@nxp.com ( ) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - Koninklijke Philips Electronics N.V. (year). All rights reserved - is replaced with: - NXP B.V. (year). All rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office via or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors

2 FEATURES High power gain Low noise figure Good thermal stability Withstands full load mismatch. PIN CONFIGURATION 1 4 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (V GS ) groups are available on request. PINNING - SOT123A PIN 1 drain 2 source 3 gate 4 source DESCRIPTION 2 3 MSB57 Fig.1 Simplified outline and symbol. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-68, SNW-FQ-32A, and SNW-FQ-32B. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. g MBB72 d s QUICK REFERENCE DATA RF performance at T h = 25 C in a common source test circuit. MODE OF OPERATION f (MHz) V DS (V) I D (A) P L (W) G p η D (%) (1) d 3 SSB, class-a (PEP) >24 < 4 SSB, class-ab (PEP) typ. 2 typ. 4 typ. 35 Note 1. 2-tone efficiency. Rev. 4-5 January 27 2 of 15

3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 6134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DSS drain-source voltage 65 V V GSS gate-source voltage ±2 V I D drain current (DC) 6 A P tot total power dissipation T mb 25 C 68 W T stg storage temperature C T j junction temperature 2 C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R th j-mb thermal resistance from junction to mounting base 2.6 K/W R th mb-h thermal resistance from mounting base to heatsink.3 K/W 1 MRA91 1 MGP35 I D (A) (1) (2) P tot (W) (1) (2) V DS (V) T h ( C) (1) Current is this area may be limited by R DSon. (2) T mb =25 C. Fig.2 DC SOAR. (1) Short-time operation during mismatch. (2) Continuous operation. Fig.3 Power derating curves. Rev. 4-5 January 27 3 of 15

4 CHARACTERISTICS T j = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS drain-source breakdown voltage I D = 1 ma; V GS = 65 V I DSS drain-source leakage current V GS = ; V DS = 28 V 2 ma I GSS gate-source leakage current V GS = ±2 V; V DS = 1 µa V GSth gate-source threshold voltage I D = 1 ma; V DS = 1 V V V GS gate-source voltage difference of matched devices I D = 1 ma; V DS = 1 V 1 mv g fs forward transconductance I D = 1.5 A; V DS = 1 V 1.2 S R DSon drain-source on-state resistance I D = 1.5 A; V GS = 1 V.4.75 Ω I DSX on-state drain current V GS = 1 V; V DS = 1 V 1 A C is input capacitance V GS = ; V DS = 28 V; f = 1 MHz 125 pf C os output capacitance V GS = ; V DS = 28 V; f = 1 MHz 75 pf C rs feedback capacitance V GS = ; V DS = 28 V; f = 1 MHz 7 pf V GS group indicator GROUP LIMITS (V) GROUP LIMITS (V) MIN. MAX. MIN. MAX. A O B P C Q D R E S F T G U H V J W K X L Y M Z N Rev. 4-5 January 27 4 of 15

5 4 T.C. (mv/k) 2 MGP36 12 I D (A) T j = 25 C MGP C I D (ma) VGS (V) V DS =1V. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. V DS =1V. Fig.5 Drain current as a function of gate-source voltage; typical values..8 R DS(on) (Ω) MGP38 24 C (pf) MGP C is C os T j ( C) V DS (V) I D = 1.5 A; V GS =1V. Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values. V GS = ; f = 1 MHz. Fig.7 Input and output capacitance as functions of drain-source voltage; typical values. Rev. 4-5 January 27 5 of 15

6 2 MRA9 C rs (pf) V DS (V) 3 V GS = ; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. Rev. 4-5 January 27 6 of 15

7 APPLICATION INFORMATION FOR CLASS-A OPERATION T h = 25 C; R th mb-h =.3 K/W; R1 = 26 Ω; unless otherwise specified. RF performance in SSB operation in a common source class-a circuit. MODE OF OPERATION f (MHz) V DS (V) I D (A) P L (W) G P SSB, class-a (PEP) >24 typ. 27 d 3 (1) d 5 (1) > 4 typ. 43 < 4 typ. 7 Z L (Ω) j5.2 Note 1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased by 6 db. 3 MGP4 2 MGP41 G p d P L (W) PEP P L (W) PEP Class-A operation; V DS = 28 V; I D = 1.3 A; R th mb-h =.3 K/W; f = 28 MHz. solid line: T h =25 C. dotted line: T h =7 C. Class-A operation; V DS = 28 V; I D = 1.3 A; R th mb-h =.3 K/W; f = 28 MHz. solid line: T h =25 C. dotted line: T h =7 C. Fig.9 Power gain as a function of load power; typical values. Fig.1 Third order intermodulation distortion as a function of load power; typical values. Rev. 4-5 January 27 7 of 15

8 handbook, full pagewidth input 5 Ω C1 C2 L1 C3 L2 R1 C4 +V G C5 D.U.T. L3 L5 C6 L4 C7 R2 C9 C1 C8 +V D output 5 Ω L6 C11 C12 MGP42 f = 28 MHz. Fig.11 Test circuit for class-a operation. List of components (see Fig.11) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C3, C8, C9 film dielectric trimmer 7 to 1 pf C2, C1 multilayer ceramic chip capacitor; note 1 39 pf C4, C7 multilayer ceramic chip capacitor 1 nf C5, C6 multilayer ceramic chip capacitor; note 1 27 pf C11 multilayer ceramic chip capacitor 3 1 nf C12 electrolytic capacitor 2.2 µf, 63 V L1 12 turns enamelled.5 mm copper wire 37 nh length 8 mm; int. dia. 4 mm L2, L3 stripline; note 2 3 Ω length 15 6mm L4 14 turns enamelled 1 mm copper wire 139 nh length 14 mm; int. dia. 9 mm L5 9 turns enamelled 1 mm copper wire 35 nh length 1 mm; int. dia. 6 mm L6 grade 3B Ferroxcube wideband HF choke R1.25 W metal film resistor 26 Ω R2.25 W metal film resistor 1 Ω Notes 1. American Technical Ceramics (ATC) capacitor, type 1B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy dielectric (ε r = 4.5), thickness. 1.6 mm. Rev. 4-5 January 27 8 of 15

9 APPLICATION INFORMATION FOR CLASS-B OPERATION T h =25 C; R th mb-h =.3 K/W; R1 = 34 Ω; unless otherwise specified. RF performance in SSB operation in a common source class-ab circuit. MODE OF OPERATION Note f (MHz) V DS (V) 1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased by 6 db. Ruggedness in class-ab operation I DQ (A) P L (W) The is capable of withstanding a load mismatch corresponding to VSWR = 5 through all phases at P L =3W single tone under the following conditions: G p V DS = 28 V; f = 28 MHz; T h =25 C; R th mb-h =.3 K/W at rated load power. η D (%) d 3 (1) d 5 (1) SSB, class-ab (PEP) typ. 2 typ. 4 typ. 35 typ j1. Z L ( Ω ) 22 MGP43 6 MGP44 G p η D (%) P L (W) P L (W) Class-AB operation; V DS = 28 V; I DQ =.25 A; R th mb-h =.3 K/W; f = 28 MHz. solid line: T h =25 C. dotted line: T h =7 C. Fig.12 Power gain as a function of load power, typical values. Class-AB operation; V DS = 28 V; I DQ =.25 A; R th mb-h =.3 K/W; f = 28 MHz. solid line: T h =25 C. dotted line: T h =7 C. Fig.13 Two tone efficiency as a function of load power, typical values. Rev. 4-5 January 27 9 of 15

10 handbook, full pagewidth input 5 Ω C1 C2 L1 L2 R1 C3 +V G C4 D.U.T. L3 L5 C5 L4 C6 R2 C7 C9 C1 C8 +V D output 5 Ω L6 C11 C12 MGP45 f = 28 MHz. Fig.14 Test circuit for class-ab operation. List of components (see Fig.14) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2 film dielectric trimmer 5 to 6 pf C3, C6 multilayer ceramic chip capacitor 1 nf C4, C5 multilayer ceramic chip capacitor; note 1 27 pf C7, C1 multilayer ceramic chip capacitor; note 1 39 pf C8, C9 film dielectric trimmer 7 to 1 pf C11 multilayer ceramic chip capacitor 3 1 nf C12 electrolytic capacitor 2.2 µf, 63 V L1 13 turns enamelled.5 mm copper wire 415 nh length 1 mm; int. dia. 5 mm L2, L3 stripline; note 2 3 Ω length 15 6mm L4 1 turns enamelled 1 mm copper wire 39 nh length 13 mm; int. dia. 7 mm L5 9 turns enamelled 1 mm copper wire 245 nh length 1 mm; int. dia. 5 mm L6 grade 3B Ferroxcube wideband HF choke R1.5 W metal film resistor 34 Ω R2.25 W metal film resistor 1 Ω Notes 1. American Technical Ceramics (ATC) capacitor, type 1B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy dielectric (ε r = 4.5), thickness 1.6 mm. Rev. 4-5 January 27 1 of 15

11 2 MGP46 2 MGP47 d 3 d P L (W) P L (W) Class-AB operation; V DS = 28 V; I DQ =.25 A; R th mb-h =.3 K/W; f = 28 MHz. solid line: T h =25 C. dotted line: T h =7 C. Fig.15 Third order intermodulation distortion as a function of load power, typical values. Class-AB operation; V DS = 28 V; I DQ =.25 A; R th mb-h =.3 K/W; f = 28 MHz. solid line: T h =25 C. dotted line: T h =7 C. Fig.16 Fifth order intermodulation distortion as a function of load power, typical values. 21 MGP48 Table 1 Input impedance as a function of frequency Class-AB operation; V DS =28V;I DQ =.25 A; P L =3W; T h =25 C; R th mb-h =.3 K/W; R1 = 34 Ω; Z L = j1 Ω. G p f (MHz) f (MHz) Z i (Ω) j j j j j j j j14.6 Class-AB operation; V DS = 28 V; I DQ =.25 A; P L = 3 W; T h =25 C; R th mb-h =.3 K/W; R 1 =34Ω;Z L = j1 Ω. Fig.17 Power gain as a function of frequency, typical values. Rev. 4-5 January of 15

12 scattering parameters V DS = 28 V; I D = 25 ma; note 1 Note f (MHz) s 11 s 21 s 12 s 22 s 11 Φ s 21 Φ s 12 Φ s 22 Φ For more extensive s-parameters see internet: Rev. 4-5 January of 15

13 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT123A D A F D 1 q C U 1 B w 2 M C M H 4 3 b c α A p U 2 U 3 1 w 1 M A M B M H 2 Q 5 1 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D 1 F H p Q q U 1 U 2 U 3 w 1 w 2 α mm inches OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT123A Rev. 4-5 January of 15

14 Legal information Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For additional information, please visit: For sales office addresses, send an to: salesaddresses@nxp.com Rev. 4-5 January of 15

15 Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes _N_ Product data sheet - _3 Modifications: corrections made to note 2 on page 8 corrections made to note 2 on page 1 _3 ( ) _CNV_2 ( xxxxx) _CNV_ Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V. 27. All rights reserved. For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com Date of release: 5 January 27 Document identifier: _N_4 Rev. 4-5 January of 15