Energy-Level Alignment at the Interface of Graphene Fluoride and Boron Nitride Monolayers: An Investigation by Many-Body Perturbation Theory
|
|
- Willa Willis
- 5 years ago
- Views:
Transcription
1 Supporting Information Energy-Level Alignment at the Interface of Graphene Fluoride and Boron Nitride Monolayers: An Investigation by Many-Body Perturbation Theory Qiang Fu, Dmitrii Nabok, and Claudia Draxl Institut für Physik and IRIS Adlershof, Humboldt-Universität zu Berlin, Zum Großen Windkanal 6, Berlin, Germany. S-0
2 1. Convergence tests for the G 0 W 0 calculations 1.1 Vacuum thickness Applying a truncation to the Coulomb potential Vc leads to well converged G0W0 band gaps by using relatively small vacuum sizes. In Fig. S1, we show the G0W0 band gaps of with different supercell sizes along the vertical direction when the Coulomb cutoff is applied (black). For comparison, the corresponding results obtained without the truncation are shown (gray). Note that the lattice of is not compressed here. As expected, the default setting (unmodified Vc) leads to a steady increase of the G0W0 gap, while applying a truncation to Vc produces well-converged band gaps truncated V c default Thickness (bohr) Figure S1: G 0W 0 band gap ( ) of the monolayer, calculated for slabs with different vacuum thickness, with (black) and without (gray) applying a truncation to the Coulomb potential V c. The calculations are performed using a coarse k-mesh of 4x6x1 and 100 empty states. Corresponding tests are also performed for the monolayer. As shown in Fig. S2, good convergence of the band gap is achieved by truncating the Coulomb potential truncated V c Thickness (bohr) Figure S2: G 0W 0 band gap ( ) of the monolayer calculated for slabs with different vacuum thickness, by applying a truncation to V c. The calculations are performed using a coarse k-mesh of 3x5x1 and 100 empty states. S-1
3 1.2 Number of k-points By using the truncated Coulomb potential, a dense k-grid is required to converge the G0W0 band gap [1]. In Fig. S3, we present the calculated G0W0 band gaps of both monolayers with different k-grids. Convergence results of 7.24 ev for and 6.95 ev for are achieved when using a 9x15 k-grid. Note that for, the CB level at K is obtained by using an interpolation scheme for the k-grids of 3x5, 4x7, 6x10, and 8x14, since the K point is not included in these k-meshes (using a rectangular unit cell) x5 4x7 5x9 6x10 7x12 8x14 9x15 k-mesh Figure S3: G 0W 0 band gaps of ( ) and (K ) calculated with different k-meshes. In Fig. S4, we plot the G0W0 band gaps as a function of 1/ Nk, with Nk being the number of k-points, expressed as [2]: E g (N k ) = a N k + b The value b in this relation corresponds to an infinite number of k-points. Very good linear relations are obtained for both materials. We estimate the converged gaps to be 7.15 ev for and 6.85 ev for, and the absolute error, coming from employing a finite Nk, is within 0.1 ev. The relative error, i.e., the band gap reduction upon interface formation, is expected to be even less, owing to error cancellations /N k Figure S4: Linear relations between the G 0W 0 band gaps and 1/ N k, for the (green) and the (blue) monolayers. For, the fundamental gap from the 8x14 mesh (1/ N k = ) is not S-2
4 shown, because the K point is not included in this k-mesh. 1.3 Number of empty states Nempty The number of empty states, Nempty, is a key parameter in G0W0 calculations. Here, we carefully check the convergence of Nempty on the band gaps and the quasiparticle energies. Results for the monolayer are shown in Fig. S5. The band gap of is not so sensitive to Nempty, and its value changes only by 0.07 ev when Nempty is increased from 100 to For the quasiparticle energies, however, the situation is different. The VBM and the CBm energies decrease by about 0.9 ev with the increase of Nempty in this range. This indicates that in G0W0 calculations, quasiparticle energies may converge much more slowly than band gaps. Thus, attention should be paid to this issue when energy-level alignment is the primary focus of such calculations VB ( ) CB ( ) N empty Figure S5: VB (black) and the CB (gray) quasiparticle energies of the monolayer at the point, for different values of N empty. A k-grid of 3x5x1 is used in these calculations. The vacuum level is set to 0 ev N empty Figure S6: VB (black) and CB (gray) quasiparticle energies of the monolayer at both the K point (up triangle) and the point (down triangle), for different values of N empty. A k-grid of 3x6x1 is used in these calculations. The vacuum level is set to 0 ev. S-3 VB (K) VB ( ) CB (K) CB ( ) The corresponding results of are shown in Fig. S6. Not only all the eigenvalues
5 move down in energy with increasing N empty, but also, the amount of decrease is not the same for different energy levels. For example, the VB position at K moves down by 0.86 ev over the full range of the tests, while that of the NFE-like state (CB at ) decreases only by 0.12 ev. With Nempty being 1000, good convergence is achieved. 2. Comparison of the G 0 W 0 band gaps of with previous results The G0W0 band gaps of from our calculations are 0.37 ev (K ) and 0.23 ev (K K) larger than the values reported in Ref. 3. It may be attributed to the DFT starting point (PBE vs LDA), computational parameters or methodology (all-electron vs pseudopotential code). At the DFT level, the band gap (K ) from PBE is 0.13 ev larger than that from LDA, which may influence the corresponding quasiparticle energies. Besides, the different k-grid used in our calculations and in Ref. 3 leads to a difference in the band gap by additional 0.1 ev, according to Fig. S4. 3. Configuration of at the interface In addition to the chair structure, the boat and zigzag configurations of have also been considered. The lattice constants always adopt the same value of Å. For the isolated monolayer, the chair geometry is the most stable one, while the boat and the zigzag structures are 0.75 ev and 0.30 ev higher in energy, respectively (for a unit cell with eight atoms). The energetic order of the three isomers are the same as in Ref. 4, although the values are slightly different (being 0.60 ev and 0.29 ev in Ref. 4) due to a compressed lattice. At the interface, the vertical distance between and is also optimized. The same value (6.0 bohr) is obtained for all configurations via a potential-energy scan (at the vdw-df level). Both the vdw-df functional and the DFT-D2 method are employed to describe the van der Waals interactions. In both cases, the interface composed by the chair configuration of is the most stable geometry. This is to be expected due to the weak vdw bonding that should not change the energetic order of the different isomers at the interface. The corresponding results are listed in Table S1. Isolated (PBE) Interface (vdw-df) Interface (DFT-D2) chair 0.00 ev 0.00 ev 0.00 ev boat 0.75 ev 0.82 ev 0.82 ev zigzag 0.30 ev 0.22 ev 0.36 ev Table S1: Relative energies of an isolated monolayer and its interface with for three different isomers. The value of the most stable configuration is set to 0. S-4
6 4. Band structure and density of states In Fig. S7, we present the Kohn-Sham band structure for the interface (black lines) and the two isolated monolayers (blue and green symbols) together with the density of states (DOS). All the calculations are performed at the DFT level with the PBE functional, using the same rectangular unit cell. One can see that the VBM of the interface is that of the monolayer, while the CBm is provided by. The comparison of the bands of the interface with those of and demonstrates the very weak interaction between the two components, indicative of the van der Waals nature of the heterojunction. Figure S7: Band structure (left) and density of states (right) for the interface and the two components. The black lines, the green dots, and the blue dots represent the interface, the, and the BN monolayer, respectively. The Fermi energy (E F) of the interface is set to 0 ev. 5. Estimation of the effective thickness for and Figure S8: Plane-averaged density of valence electrons for the individual and monolayers. The effective thickness (in bohr) is determined by the respective full-width-at-half-maximum value. References [1] Hüser, F.; Olsen, T.; and Thygesen, K. S. Phys. Rev. B 2013, 88, S-5
7 [2] Puschnig, P.; Amiri, P.; and Draxl, C. Phys. Rev. B 2012, 86, [3] Hüser, F.; Olsen, T.; and Thygesen, K. S. Phys. Rev. B 2013, 87, [4] Leenaerts, O.; Peelaers, H.; Hernández-Nieves, A. D.; Partoens, B.; and Peeters, F. M. Phys. Rev. B 2010, 82, S-6
Supporting Information
Supporting Information Conversion of multilayer graphene into continuous ultrathin sp 3 - bonded carbon films on metal surfaces Dorj Odkhuu 1, Dongbin Shin 2, Rodney S. Ruoff 3, and Noejung Park 1,2 1
More informationCITY UNIVERSITY OF HONG KONG. Theoretical Study of Electronic and Electrical Properties of Silicon Nanowires
CITY UNIVERSITY OF HONG KONG Ë Theoretical Study of Electronic and Electrical Properties of Silicon Nanowires u Ä öä ªqk u{ Submitted to Department of Physics and Materials Science gkö y in Partial Fulfillment
More informationSupporting Information for Interfacial Effects on. the Band Edges of Functionalized Si Surfaces in. Liquid Water
Supporting Information for Interfacial Effects on the Band Edges of Functionalized Si Surfaces in Liquid Water Tuan Anh Pham,,, Donghwa Lee, Eric Schwegler, and Giulia Galli, Department of Chemistry, University
More informationThe Electronic Structure of Dye- Sensitized TiO 2 Clusters from Many- Body Perturbation Theory
The Electronic Structure of Dye- Sensitized TiO 2 Clusters from Many- Body Perturbation Theory Noa Marom Center for Computational Materials Institute for Computational Engineering and Sciences The University
More informationand strong interlayer quantum confinement
Supporting Information GeP3: A small indirect band gap 2D crystal with high carrier mobility and strong interlayer quantum confinement Yu Jing 1,3, Yandong Ma 1, Yafei Li 2, *, Thomas Heine 1,3 * 1 Wilhelm-Ostwald-Institute
More informationElectronic and Vibrational Properties of Monolayer Hexagonal Indium Chalcogenides
Electronic and Vibrational Properties of Monolayer Hexagonal Indium Chalcogenides V. Zólyomi, N. D. Drummond and V. I. Fal ko Department of Physics, Lancaster University QMC in the Apuan Alps IX, TTI,
More informationCombining quasiparticle energy calculations with exact-exchange density-functional theory
Combining quasiparticle energy calculations with exact-exchange density-functional theory Patrick Rinke 1, Abdallah Qteish 1,2, Jörg Neugebauer 1,3,4, Christoph Freysoldt 1 and Matthias Scheffler 1 1 Fritz-Haber-Institut
More informationInstitute of High Performance Computing, Agency for Science, Technology and Research, 1 Fusionopolis Way, #16-16 Connexis, Singapore
First Principles Investigations of the Atomic, Electronic, and Thermoelectric Properties of Equilibrium and Strained Bi2Se3 & Bi2Te3, with van der Waals Interactions Xin Luo, Michael B. Sullivan, and Su
More informationThe Nature of the Interlayer Interaction in Bulk. and Few-Layer Phosphorus
Supporting Information for: The Nature of the Interlayer Interaction in Bulk and Few-Layer Phosphorus L. Shulenburger, A.D. Baczewski, Z. Zhu, J. Guan, and D. Tománek, Sandia National Laboratories, Albuquerque,
More informationDmitrii Nabok Humboldt-Universität zu Berlin. August 8th, 2016
GW@ Dmitrii Nabok Humboldt-Universität zu Berlin August 8th, 2016 Outline Introduction G0W0 approximation Implementation Program workflow Product basis representation Matrix form of GW equations Usage
More informationTheoretical approaches towards the understanding of organic semiconductors:
Claudia Ambrosch-Draxl Chair of Atomistic Modelling and Design of Materials University of Leoben Theoretical approaches towards the understanding of organic semiconductors: from electronic and optical
More informationThe LDA-1/2 method in exciting
http://exciting-code.org The LDA-1/2 method in exciting Ronaldo Rodrigues Pelá Humboldt Universität zu Berlin Instituto Tecnológico de Aeronáutica Outline DFT-1/2 Exchange-correlation functionals Exact
More informationElectronic Supplementary Information
Electronic Supplementary Material (ESI) for Nanoscale. This journal is The Royal Society of Chemistry 2016 Electronic Supplementary Information Two-dimensional BX (X=P, As, Sb) Semiconductors with Mobilities
More informationDefects in Semiconductors
Defects in Semiconductors Mater. Res. Soc. Symp. Proc. Vol. 1370 2011 Materials Research Society DOI: 10.1557/opl.2011. 771 Electronic Structure of O-vacancy in High-k Dielectrics and Oxide Semiconductors
More informationSupporting information for: Novel Excitonic Solar Cells in Phosphorene-TiO 2. Heterostructures with Extraordinary Charge. Separation Efficiency
Supporting information for: Novel Excitonic Solar Cells in Phosphorene-TiO 2 Heterostructures with Extraordinary Charge Separation Efficiency Liujiang Zhou,,, Jin Zhang,, Zhiwen Zhuo, Liangzhi Kou, Wei
More informationIntroduction to Density Functional Theory with Applications to Graphene Branislav K. Nikolić
Introduction to Density Functional Theory with Applications to Graphene Branislav K. Nikolić Department of Physics and Astronomy, University of Delaware, Newark, DE 19716, U.S.A. http://wiki.physics.udel.edu/phys824
More informationPractical calculations with the GW approximation and Bethe-Salpeter equation in BerkeleyGW
Practical calculations with the GW approximation and Bethe-Salpeter equation in BerkeleyGW David A. Strubbe Department of Physics, University of California, Merced Benasque, Spain 23 August 2018 Band gaps:
More informationexciting in a nutshell
http://exciting-code.org exciting in a nutshell Pasquale Pavone Humboldt-Universität zu Berlin http://exciting-code.org exciting in a (coco)nutshell Pasquale Pavone Humboldt-Universität zu Berlin Outline
More informationTable of Contents. Table of Contents Opening a band gap in silicene and bilayer graphene with an electric field
Table of Contents Table of Contents Opening a band gap in silicene and bilayer graphene with an electric field Bilayer graphene Building a bilayer graphene structure Calculation and analysis Silicene Optimizing
More informationElectronic Supporting Information for
Electronic Supplementary Material (ESI) for Materials Horizons. This journal is The Royal Society of Chemistry 2015 Electronic Supporting Information for Probing the Energy Levels in Hole-doped Molecular
More informationS ince their discovery1, carbon nanotubes and their unique electronic properties have been an area of great
OPEN SUBJECT AREAS: ELECTRONIC PROPERTIES AND MATERIALS NANOWIRES Received 24 September 2013 Accepted 10 December 2013 Published 9 January 2014 Correspondence and requests for materials should be addressed
More informationAll electron optimized effective potential method for solids
All electron optimized effective potential method for solids Institut für Theoretische Physik Freie Universität Berlin, Germany and Fritz Haber Institute of the Max Planck Society, Berlin, Germany. 22
More informationSelf-modulated band gap in boron nitride nanoribbons and. hydrogenated sheets
This journal is The Royal Society of Chemistry 1 Self-modulated band gap in boron nitride nanoribbons and hydrogenated sheets Zhuhua Zhang a,b, Wanlin Guo a, and Boris I. Yakobson b a State ey Laboratory
More informationSupplementary Information
Supplementary Information Supplementary Figure 1: Electronic Kohn-Sham potential profile of a charged monolayer MoTe 2 calculated using PBE-DFT. Plotted is the averaged electronic Kohn- Sham potential
More informationExplaining the apparent arbitrariness of the LDA-1/2 self-energy. correction method applied to purely covalent systems
Explaining the apparent arbitrariness of the LDA-1/2 self-energy correction method applied to purely covalent systems Kan-Hao Xue, 1,2 Leonardo R. C. Fonseca, 3 and Xiang-Shui Miao 1,2 1 School of Optical
More informationOur first-principles calculations were performed using the Vienna Ab Initio Simulation
Supplementary Note 1: Computational details First-principles calculations Our first-principles calculations were performed using the Vienna Ab Initio Simulation Package (VASP) 1, which is based on density
More informationChris G. Van de Walle Materials Department, UCSB
First-principles simulations of defects in oxides and nitrides Chris G. Van de Walle Materials Department, UCSB Acknowledgments: A. Janotti, J. Lyons, J. Varley, J. Weber (UCSB) P. Rinke (FHI), M. Scheffler
More informationTinselenidene: a Two-dimensional Auxetic Material with Ultralow Lattice Thermal Conductivity and Ultrahigh Hole Mobility
Tinselenidene: a Two-dimensional Auxetic Material with Ultralow Lattice Thermal Conductivity and Ultrahigh Hole Mobility Li-Chuan Zhang, Guangzhao Qin, Wu-Zhang Fang, Hui-Juan Cui, Qing-Rong Zheng, Qing-Bo
More informationOutline. Introduction: graphene. Adsorption on graphene: - Chemisorption - Physisorption. Summary
Outline Introduction: graphene Adsorption on graphene: - Chemisorption - Physisorption Summary 1 Electronic band structure: Electronic properties K Γ M v F = 10 6 ms -1 = c/300 massless Dirac particles!
More informationSupporting information for
Supporting information for What is the role of pyridinium in pyridine-catalyzed CO 2 reduction on p-gap photocathodes? Martina Lessio a and Emily A. Carter* b Contents: 1) Cluster calculations: general
More informationarxiv: v1 [cond-mat.mes-hall] 15 Aug 2014
The potential applications of phosphorene as anode arxiv:1408.3488v1 [cond-mat.mes-hall] 15 Aug 2014 materials in Li-ion batteries Shijun Zhao,, and Wei Kang, HEDPS, Center for Applied Physics and Technology,
More informationUniversity of Chinese Academy of Sciences, Beijing , People s Republic of China,
SiC 2 Siligraphene and Nanotubes: Novel Donor Materials in Excitonic Solar Cell Liu-Jiang Zhou,, Yong-Fan Zhang, Li-Ming Wu *, State Key Laboratory of Structural Chemistry, Fujian Institute of Research
More informationSupplementary Information
Supplementary Information Supplementary Figure 1: After structural optimization of the CH 3 NH 3 PbI 3 unit cell, the resulting relaxed volumes for three distinct orientation of the MA molecules are shown.
More informationSupplementary Figures
Supplementary Figures 8 6 Energy (ev 4 2 2 4 Γ M K Γ Supplementary Figure : Energy bands of antimonene along a high-symmetry path in the Brillouin zone, including spin-orbit coupling effects. Empty circles
More informationSupporting Information for. Electric-magneto-optical Kerr effect in a. hybrid organic-inorganic perovskite
Supporting Information for Electric-magneto-optical Kerr effect in a hybrid organic-inorganic perovskite Feng-Ren Fan, Hua Wu,,, Dmitrii Nabok, Shunbo Hu, Wei Ren, Claudia Draxl, and Alessandro Stroppa,,
More informationFree energy sampling for electrochemical systems
Free energy sampling for electrochemical systems Mira Todorova, Anoop Kishore Vatti, Suhyun Yoo and Jörg Neugebauer Department of Computational Materials Design Düsseldorf, Germany m.todorova@mpie.de IPAM,
More informationSupporting information for Polymer interactions with Reduced Graphene Oxide: Van der Waals binding energies of Benzene on defected Graphene
Supporting information for Polymer interactions with Reduced Graphene Oxide: Van der Waals binding energies of Benzene on defected Graphene Mohamed Hassan, Michael Walter *,,, and Michael Moseler, Freiburg
More informationStudying Stability of Fluorographene with DFT Method Introduction
International Research Journal of Applied and Basic Sciences 014 Available online at www.irjabs.com ISSN 51-88X / Vol, 8 (9): 105-114 Science Explorer Publications Studying Stability of Fluorographene
More informationImpact of widely used approximations to the G 0 W 0 method: An all-electron perspective
Impact of widely used approximations to the G 0 W 0 method: An all-electron perspective Xin-Zheng Li, 1 Ricardo Gómez-Abal, 1 Hong Jiang, 1, Claudia Ambrosch-Draxl, 2 and Matthias Scheffler 1 1 Fritz-Haber-Institut
More information7/29/2014. Electronic Structure. Electrons in Momentum Space. Electron Density Matrices FKF FKF. Ulrich Wedig
Electron Density Matrices Density matrices Γ, an alternative to the wavefunction Ψ, for the description of a quantum system Electronic Structure The N-particle density matrix Electrons in Momentum Space
More informationPBS: FROM SOLIDS TO CLUSTERS
PBS: FROM SOLIDS TO CLUSTERS E. HOFFMANN AND P. ENTEL Theoretische Tieftemperaturphysik Gerhard-Mercator-Universität Duisburg, Lotharstraße 1 47048 Duisburg, Germany Semiconducting nanocrystallites like
More informationdoi: /PhysRevLett
doi:.3/physrevlett.86.3835 VOLUME 86, NUMBER 7 P H Y S I C A L R E V I E W L E T T E R S 3 APRIL Energetics and Electronic Structures of Encapsulated C 6 in a Carbon Nanotube Susumu Okada, Susumu Saito,
More informationInter-Layer Potential for Graphene/h-BN Heterostructures. Supplementary Information
Inter-Layer Potential for Graphene/h-BN Heterostructures Supplementary Information Itai Leven, 1 Tal Maaravi, 1 Ido Azuri, 2 Leeor Kronik, 2 and Oded Hod 1 1 Department of Physical Chemistry, School of
More informationPractical Guide to Density Functional Theory (DFT)
Practical Guide to Density Functional Theory (DFT) Brad Malone, Sadas Shankar Quick recap of where we left off last time BD Malone, S Shankar Therefore there is a direct one-to-one correspondence between
More informationSearch for materials to harvest light
Solar nanocomposites with complementary charge extraction pathways for electrons and holes: Si embedded in ZnS S. Wippermann, M. Vörös, F. Gygi, A. Gali, G. Zimanyi, G. Galli NanoMatFutur DPG-2014, 04/03/2014
More informationDefects in TiO 2 Crystals
, March 13-15, 2013, Hong Kong Defects in TiO 2 Crystals Richard Rivera, Arvids Stashans 1 Abstract-TiO 2 crystals, anatase and rutile, have been studied using Density Functional Theory (DFT) and the Generalized
More informationBinding energy of bilayer graphene and Electronic properties of oligoynes
Binding energy of bilayer graphene and Electronic properties of oligoynes E. Mostaani and N. Drummond Thursday, 31 July 2014 Van der Waals interaction Important contributions to the description of binding
More informationSupplementary Materials for
advances.sciencemag.org/cgi/content/full/3/10/e1701661/dc1 Supplementary Materials for Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface Jun Hong Park,
More informationSingle-Layer Tl 2 O: A Metal-Shrouded 2D Semiconductor with High Electronic Mobility
Supporting information for Single-Layer Tl 2 O: A Metal-Shrouded 2D Semiconductor with High Electronic Mobility Yandong Ma, Agnieszka Kuc, and Thomas Heine*, Wilhelm-Ostwald-Institut für Physikalische
More informationFirst-principles Studies of Formaldehyde Molecule Adsorption on Graphene Modified with Vacancy, -OH, -CHO and -COOH Group
2017 Asia-Pacific Engineering and Technology Conference (APETC 2017) ISBN: 978-1-60595-443-1 First-principles Studies of Formaldehyde Molecule Adsorption on Graphene Modified with Vacancy, -OH, -CHO and
More informationCo-existing honeycomb and Kagome characteristics. in the electronic band structure of molecular. graphene: Supporting Information
Co-existing honeycomb and Kagome characteristics in the electronic band structure of molecular graphene: Supporting Information Sami Paavilainen,, Matti Ropo,, Jouko Nieminen, Jaakko Akola,, and Esa Räsänen
More informationChapter 3. The (L)APW+lo Method. 3.1 Choosing A Basis Set
Chapter 3 The (L)APW+lo Method 3.1 Choosing A Basis Set The Kohn-Sham equations (Eq. (2.17)) provide a formulation of how to practically find a solution to the Hohenberg-Kohn functional (Eq. (2.15)). Nevertheless
More informationFluorographynes: Stability, Structural and Electronic Properties
Fluorographynes: Stability, Structural and Electronic Properties A. N. Enyashin, A. L. Ivanovskii * Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, Ekaterinburg, GSP-145,
More informationSupporting Information
Electronic Supplementary Material (ESI) for Nanoscale. This journal is The Royal Society of Chemistry 2015 Supporting Information Single Layer Lead Iodide: Computational Exploration of Structural, Electronic
More informationA novel p type half-heusler from high-throughput transport and defect calculations
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry C. This journal is The Royal Society of Chemistry 06 A novel p type half-heusler from high-throughput transport and defect calculations
More informationStructural and Electronic Effects on the Properties of Fe 2 (dobdc) upon Oxidation with N 2 O
Supporting information for paper in Inorganic Chemistry, April 11, 016, page S-1 Structural and Electronic Effects on the Properties of Fe (dobdc) upon Oxidation with N O oshua Borycz, 1, oachim Paier,
More informationSUPPLEMENTARY INFORMATION
Anatase TiO 2 single crystals with a large percentage of reactive facets Hua Gui Yang, Cheng Hua Sun, Shi Zhang Qiao, Jin Zou, Gang Liu, Sean Campbell Smith, Hui Ming Cheng & Gao Qing Lu Part I: Calculation
More informationSnO 2 Physical and Chemical Properties due to the Impurity Doping
, March 13-15, 2013, Hong Kong SnO 2 Physical and Chemical Properties due to the Impurity Doping Richard Rivera, Freddy Marcillo, Washington Chamba, Patricio Puchaicela, Arvids Stashans Abstract First-principles
More informationTable of Contents. Table of Contents Using the Crystal Builder. Introduction Crystal structure of black phosphorus Phosphorene and its bandstructure
Table of Contents Table of Contents Using the Crystal Builder Introduction Crystal structure of black phosphorus Phosphorene and its bandstructure Bandstructure References 1 2 2 3 7 9 10 QuantumATK Try
More informationQuasiparticle band structure of carbon nanotubes
Quasiparticle band structure of carbon nanotubes Takashi Miyake and Susumu Saito Department of Physics, Tokyo Institute of Technology, 2-12-1 Oh-okayama, Meguro-ku, Tokyo 152-8551, Japan Received 11 August
More informationBand gap modification of single-walled carbon nanotube and boron nitride nanotube under a transverse electric field
INSTITUTE OF PHYSICS PUBLISHING Nanotechnology 15 (2004) 1837 1843 NANOTECHNOLOGY PII: S0957-4484(04)84638-5 Band gap modification of single-walled carbon nanotube and boron nitride nanotube under a transverse
More informationDENSITY FUNCTIONAL THEORY FOR NON-THEORISTS JOHN P. PERDEW DEPARTMENTS OF PHYSICS AND CHEMISTRY TEMPLE UNIVERSITY
DENSITY FUNCTIONAL THEORY FOR NON-THEORISTS JOHN P. PERDEW DEPARTMENTS OF PHYSICS AND CHEMISTRY TEMPLE UNIVERSITY A TUTORIAL FOR PHYSICAL SCIENTISTS WHO MAY OR MAY NOT HATE EQUATIONS AND PROOFS REFERENCES
More informationDFT / SIESTA algorithms
DFT / SIESTA algorithms Javier Junquera José M. Soler References http://siesta.icmab.es Documentation Tutorials Atomic units e = m e = =1 atomic mass unit = m e atomic length unit = 1 Bohr = 0.5292 Ang
More informationdoi: /PhysRevB
doi:./physrevb.8.6 PHYSICAL REVIEW B 8, 6 R 9 Atomic configurations and energetics of vacancies in hexagonal boron nitride: First-principles total-energy calculations Susumu Okada Graduate School of Pure
More informationSupplementary Information for Solution-Synthesized Chevron Graphene Nanoribbons Exfoliated onto H:Si(100)
Supplementary Information for Solution-Synthesized Chevron Graphene Nanoribbons Exfoliated onto H:Si(100) Adrian Radocea,, Tao Sun,, Timothy H. Vo, Alexander Sinitskii,,# Narayana R. Aluru,, and Joseph
More informationAtomic structure and stability of AlN 0001 and 0001 surfaces
PHYSICAL REVIEW B VOLUME 55, NUMBER 20 15 MAY 1997-II Atomic structure and stability of AlN 0001 and 0001 surfaces John E. Northrup and R. Di Felice Xerox Palo Alto Research Center, 3333 Coyote Hill Road,
More informationSUPPLEMENTARY INFORMATION
Atomic structure and dynamic behaviour of truly one-dimensional ionic chains inside carbon nanotubes Ryosuke Senga 1, Hannu-Pekka Komsa 2, Zheng Liu 1, Kaori Hirose-Takai 1, Arkady V. Krasheninnikov 2
More informationSupplementary Figure 1 Two-dimensional map of the spin-orbit coupling correction to the scalar-relativistic DFT/LDA band gap. The calculations were
Supplementary Figure 1 Two-dimensional map of the spin-orbit coupling correction to the scalar-relativistic DFT/LDA band gap. The calculations were performed for the Platonic model of PbI 3 -based perovskites
More informationFirst Principle Calculation of Electronic, Optical Properties and Photocatalytic Potential of CuO Surfaces
ICoSE Conference on Instrumentation, Environment and Renewable Energy (2015), Volume 2016 Conference Paper First Principle Calculation of Electronic, Optical Properties and Photocatalytic Potential of
More informationDesign of Efficient Catalysts with Double Transition Metal. Atoms on C 2 N Layer
Supporting Information Design of Efficient Catalysts with Double Transition Metal Atoms on C 2 N Layer Xiyu Li, 1, Wenhui Zhong, 2, Peng Cui, 1 Jun Li, 1 Jun Jiang 1, * 1 Hefei National Laboratory for
More informationMulti-Scale Modeling from First Principles
m mm Multi-Scale Modeling from First Principles μm nm m mm μm nm space space Predictive modeling and simulations must address all time and Continuum Equations, densityfunctional space scales Rate Equations
More informationSupporting Information. Enhanced Raman Scattering on In-Plane Anisotropic Layered Materials
Supporting Information Enhanced Raman Scattering on In-Plane Anisotropic Layered Materials Jingjing Lin 1, Liangbo Liang 2,3, Xi Ling 4, Shuqing Zhang 1, Nannan Mao 1, Na Zhang 1, Bobby G. Sumpter 2,5,
More informationOrganic molecular crystals in electric fields
Surface Science 566 568 (2004) 644 649 www.elsevier.com/locate/susc Organic molecular crystals in electric fields Jaroslav Tobik a,b, *, Andrea Dal Corso a,b, Sandro Scandolo b,c, Erio Tosatti a,b,c a
More informationBand Structure Calculations; Electronic and Optical Properties
; Electronic and Optical Properties Stewart Clark University of Outline Introduction to band structures Calculating band structures using Castep Calculating optical properties Examples results Some applications
More informationarxiv: v2 [cond-mat.mtrl-sci] 10 Jul 2018
Linear response phonon dynamics of anisotropic black phosphorous monolayer: PAW mediated ab initio DFPT calculations Sushant Kumar Behera and Pritam Deb Advanced Functional Material Laboratory, Department
More informationDETECTION OF NO 2 ADSORBED ON GRAPHYNE NANOTUBES
DETECTION OF NO 2 ADSORBED ON GRAPHYNE NANOTUBES A.R. KARAMI 1, R. MAJIDI 2 1 Department of Chemistry, Shahid Rajaee Teacher Training University, Lavizan, 16788-15811 Tehran, Iran, E-mail: ar_karami@srttu.edu,
More informationarxiv: v1 [cond-mat.mtrl-sci] 9 Oct 2007
Adsorption of H 2 O, NH 3, CO, NO 2, and NO on graphene: A first-principles study O. Leenaerts, B. Partoens, and F. M. Peeters Universiteit Antwerpen, Departement Fysica, Groenenborgerlaan 171, B-2020
More informationTheoretical Study of the Surface Optical Properties of Clean and Hydrogenated GaAs(110)
O. Pulci et al.: Surface Optical Properties of GaAs(110) 71 phys. stat. sol. (a) 175, 71 (1999) Subject classification: 73.20.At; 68.35.Bs; 78.66.Fd; S7.12 Theoretical Study of the Surface Optical Properties
More informationReferences. Documentation Manuals Tutorials Publications
References http://siesta.icmab.es Documentation Manuals Tutorials Publications Atomic units e = m e = =1 atomic mass unit = m e atomic length unit = 1 Bohr = 0.5292 Ang atomic energy unit = 1 Hartree =
More informationSupporting Information. Combined Theoretical and Experimental Study of Band-Edge Control of Si. through Surface Functionalization
Supporting Information Combined Theoretical and Experimental Study of Band-Edge Control of Si through Surface Functionalization Yan Li a, Leslie E. O Leary b, Nathan S. Lewis, b, and Giulia Galli c,d a
More informationPreface Introduction to the electron liquid
Table of Preface page xvii 1 Introduction to the electron liquid 1 1.1 A tale of many electrons 1 1.2 Where the electrons roam: physical realizations of the electron liquid 5 1.2.1 Three dimensions 5 1.2.2
More informationX-ray diffraction and Crystal Structure Solutions from Thin Films
X-ray diffraction and Crystal Structure Solutions from Thin Films Ingo Salzmann Humboldt-Universität zu Berlin Institut für Physik Overview Experimental technique X-ray diffraction The principal phenomenon
More informationModellierung molekularer Prozesse beim Wachstum organischer Schichten
Modellierung molekularer Prozesse beim Wachstum organischer Schichten Slide 1 Motivation OLED para Sexiphenyl (6P) (C36H26) OFET Pentacene (5A) (C22H14) Slide 2 Outline Methods and Materials Cohesive,
More informationSupporting information
Supporting information Toward a Janus Cluster: Regiospecific Decarboxylation of Ag 44 (4- MBA) 30 @Ag Nanoparticles Indranath Chakraborty, Anirban Som, Tuhina Adit Maark, Biswajit Mondal, Depanjan Sarkar
More informationSupplemental Material: Experimental and Theoretical Investigations of the Electronic Band Structure of Metal-Organic Framework of HKUST-1 Type
Supplemental Material: Experimental and Theoretical Investigations of the Electronic Band Structure of Metal-Organic Framework of HKUST-1 Type Zhigang Gu, a Lars Heinke, a,* Christof Wöll a, Tobias Neumann,
More informationarxiv: v2 [cond-mat.mtrl-sci] 24 Dec 2014
Defect in Phosphorene arxiv:1411.6986v2 [cond-mat.mtrl-sci] 24 Dec 2014 Wei Hu 1, 2, 3, and Jinlong Yang 1 Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
More informationSub-Angstrom Edge Relaxations Probed by Electron. Microscopy in Hexagonal Boron Nitride (h-bn)
Supplementary Material for Sub-Angstrom Edge Relaxations Probed by Electron Microscopy in Hexagonal Boron Nitride (h-bn) Nasim Alem 1,2,3, Quentin M. Ramasse 4,*, Che R. Seabourne 5, Oleg V. Yazyev 1,3,6,
More informationNonlocal exchange correlation in screened-exchange density functional methods
Nonlocal exchange correlation in screened-exchange density functional methods Byounghak Lee and Lin-Wang Wang Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, California
More informationAB INITIO SIMULATION OF GRAPHENE INTERACTION WITH SiO 2 SUBSTRATE FOR NANOELECTRONICS APPLICATION
Materials Physics and Mechanics 39 (2018) 27-34 Received: November 1, 2017 AB INITIO SIMULATION OF GRAPHENE INTERACTION WITH SiO 2 SUBSTRATE FOR NANOELECTRONICS APPLICATION Dzmitry Hvazdouski*, Viktor
More informationSubstrate-mediated band-dispersion of adsorbate molecular states - Supplementary Information
Substrate-mediated band-dispersion of adsorbate molecular states - Supplementary Information M. Wießner, 1, 2 J. Ziroff, 1, 2 F. Forster, 1, 2 M. Arita, 3 K. Shimada, 3 P. Puschnig, 4 A. Schöll*, 1, 2,
More informationSupplementary Information. Interfacial Properties of Bilayer and Trilayer Graphene on Metal. Substrates
Supplementary Information Interfacial Properties of Bilayer and Trilayer Graphene on Metal Substrates Jiaxin Zheng, 1,2, Yangyang Wang, 1, Lu Wang, 3 Ruge Quhe, 1,2 Zeyuan Ni, 1 Wai-Ning Mei, 3 Zhengxiang
More informationPCCP Accepted Manuscript
PCCP Accepted Manuscript This is an Accepted Manuscript, which has been through the Royal Society of Chemistry peer review process and has been accepted for publication. Accepted Manuscripts are published
More informationAb-initio study of MgSe self-interstitial (Mg i and Se i ) Emmanuel. Igumbor 12,a,Kingsley Obodo 1,b and Water E. Meyer 1,c
Ab-initio study of MgSe self-interstitial (Mg i and Se i ) Emmanuel. Igumbor 12,a,Kingsley Obodo 1,b and Water E. Meyer 1,c 1 Department of Physics, University of Pretoria, Pretoria 0002, South Africa.
More informationnanohub.org learning module: Prelab lecture on bonding and band structure in Si
nanohub.org learning module: Prelab lecture on bonding and band structure in Si Ravi Vedula, Janam Javerhi, Alejandro Strachan Center for Predictive Materials Modeling and Simulation, School of Materials
More informationAndré Schleife Department of Materials Science and Engineering
André Schleife Department of Materials Science and Engineering Yesterday you (should have) learned this: http://upload.wikimedia.org/wikipedia/commons/e/ea/ Simple_Harmonic_Motion_Orbit.gif 1. deterministic
More informationDFT EXERCISES. FELIPE CERVANTES SODI January 2006
DFT EXERCISES FELIPE CERVANTES SODI January 2006 http://www.csanyi.net/wiki/space/dftexercises Dr. Gábor Csányi 1 Hydrogen atom Place a single H atom in the middle of a largish unit cell (start with a
More informationBasics of DFT applications to solids and surfaces
Basics of DFT applications to solids and surfaces Peter Kratzer Physics Department, University Duisburg-Essen, Duisburg, Germany E-mail: Peter.Kratzer@uni-duisburg-essen.de Periodicity in real space and
More informationStrained Silicon, Electronic Band Structure and Related Issues.
Strained Silicon, Electronic Band Structure and Related Issues. D. Rideau, F. Gilibert, M. Minondo, C. Tavernier and H. Jaouen STMicroelectronics,, Device Modeling 850 rue Jean Monnet, BP 16, F-38926 Crolles
More informationarxiv: v1 [cond-mat.mtrl-sci] 9 Jun 2015
Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides arxiv:1506.02841v1 [cond-mat.mtrl-sci] 9 Jun 2015 This document is the unedited Author s version
More informationGraphene on metals: A van der Waals density functional study
Downloaded from orbit.dtu.dk on: Sep 0, 018 Graphene on metals: A van der Waals density functional study Vanin, Marco; Mortensen, Jens Jørgen; Kelkkanen, Kari André; García Lastra, Juan Maria; Thygesen,
More information