arxiv:cond-mat/ v1 [cond-mat.mtrl-sci] 29 Sep 1997

Transcription

1 Dopant Spatial Distributions: Sample Inepenent Response Function An Maximum Entropy Reconstruction D. P. Chu an M. G. Dowsett Department of Physics, University of Warwick, Coventry CV4 7AL, UK arxiv:con-mat/970933v [con-mat.mtrl-sci] 29 Sep 997 We emonstrate the use of maximum entropy base econvolution to reconstruct boron spatial istribution from the seconary ion mass spectrometry (SIMS) epth profiles on a system of variously space boron δ-layers grown in silicon. Sample inepenent response functions are obtaine using a new metho which reuces the anger of incorporating real sample behaviour in the response. Although the original profiles of ifferent primary ion energies appear quite ifferently, the reconstructe istributions agree well with each other. The epth resolution in the reconstructe ata is increase significantly an segregation of boron at the near surface sie of the δ-layers is clearly shown. The improvement of the epth resolution achieve in sputter profiling in general an seconary ion mass spectrometry (SIMS) in particular has continue over the last ten years espite occasional preictions about the limit ha been reache []. Nevertheless, the resolution achieve irectly may not be aequate for future generations of semiconuctor evice material, even if ultralow energies [2,3] or large cluster ions [4] are employe in the primary beam. The SIMS mass transport effects ue to energy eposition an probe beam incorporation from the primary beam are well known the measure profile is broaen an shifte from its true position [5 7]. Although the use of low beam energies or high mass clusters can greatly alleviate the effects, such mass transport effect is intrinsic to the SIMS epth profiling process an can still be observe even when the primary ion beam energy is as low as 250eV [8] or when using SF + 5 ions at 600eV [4]. The true spatial istributions remain to be reconstructe especially when there is an abrupt interface or δ- oping present. In the concentration range of common practical interest in SIMS, e.g. the ilute limit where opant concentration %, there is a strictly proportional relation between the signal an the instantaneous surface concentration as well as between the primary ion flux ensity an erosion rate outsie the pre-equilibrium region for a single matrix [9]. Where the essential physics of the analytical process is linear, econvolution is the mathematically correct metho to recover an quantify the epth profiles [0]. The ieal SIMS signal at the epth z, Y 0 (z), can be expresse as a convolution of the true concentration istribution, C(z), with the SIMS instrumental response function, R(z), Y 0 (z) = C(z )R(z z )z () since primary ion flux must be also proportional to the elapse time (otherwise epth calibration becomes problematic). Here we efine Y 0 (z) an C(z) with the same imension of concentration per unit length an R(z) normalise over the epth to simplify the equation an ensure that sample mass is conserve. A slightly more sophisticate moel Y 0 (z) = C(z )R(z z,z)z might be use if the epth resolution was epth epenent. It woul be a straightforwar inverse problem to etermine the true spatial istribution C(z) if the corresponing ieal SIMS signal Y 0 (z) coul be measure. In fact, the measure SIMS signal, Y(z), is as usual a combination of the ieal signal an associate non-negligible noise component, Y N (z), Y(z) = Y 0 (z)+y N (z) (2) There is no obvious way to fin C(z) from Y(z). Various methos have been use to obtain C(z) [3]. Yet, the lack of objective evience makes it very ifficult to reconstruct the real features an separate them from the SIMS effect justifiably, e.g., to istinguish the segregation an iffusion occurring uring growth at the interface of two ifferent materials from the SIMS atomic mixing. Moreover, the peculiar character of the SIMS epth profile ata everywhere positive, an large ynamic range(may span 0 orers of magnitue overall an 4-6 orers for a particular species), requires a very careful an unbiase treatment. Manipulating ata arbitrarily, such as placing a subjective penalty on each change in slope or simply filtering certain range of frequency components, coul seriously istort the final results an/or easily lea to unphysical negative values. We believe that only the features with statistical evience in the original ata shoul be extracte an a empirical econvolution metho [] base on the maximum entropy (MaxEnt) principle [2,3] fulfils such a requirement. The success of a MaxEnt econvolution metho relies on the fining of a sample inepenent response function an a suitable noise moel. Neither of them can be obtaine for the SIMS process with sufficient accuracy from first principle calculations because of incomplete knowl-

2 ege. Our recent investigation shows that the noise in the SIMS epth profiling follows Poissonian statistics universally [4] an the relation between the mean counts, s m (z), an its corresponing stanar eviation, σ s (z), is σ s (z) = s m (z) /2. The response function shoul contain only the SIMS relate information, i.e. the broaening, the shift an possibly the ion yiel, but must not contain sample epenent features. Ieally, the response function is the transient measure from an infinitesimally thin layer, often known as a δ-layer. However, such a δ- layer is an abstraction an even if it were not, we have no means to recognise its existence, other than very locally. Moreover, as the intrinsic resolution of SIMS is improve by using sub-kev probes [8], it is reaily apparent that the real approximations to such structures which can be grown leave a measurable sample- relate shape content in the SIMS profile ue to statistical placement of atoms, segregation, an iffusion at the growth temperature, etc. Simply using such ata as response function, econvolution will suppress real features in the epth profile, an prouce artificial concentration slopes an unrealistically small feature withs. In the following, we outline a metho for extracting a sample inepenent SIMS response function for the case of boron in silicon sample by oxygen beam for various primary beam energies. Subsequently, we emonstrate a MaxEnt econvolution to reconstruct the opant istribution from SIMS epth profiles using the corresponing response function an noise moel. The results are then iscusse. Experimental an theoretical stuies explore the mass transport in the SIMS process [5 8]. It has been shown that the normalise response function can be represente by the following form in several orers of magnitue [8]: R(z) = 2(λ g +λ ) { [ erf(ξg )]exp [ z/λ g +(σ/λ g ) 2 /2 ] + [+erf(ξ )]exp [ z/λ +(σ/λ ) 2 /2 ]} (3) where ξ g = (z/σ+σ/λ g ) /2 an ξ = (z/σ σ/λ ) /2, σ is the primitivestanar eviation, λ g an λ the growth an ecay lengths. The smaller the λ g an λ are, the sharper the R(z) will be. When they approach zero, the R(z) will egenerate to a Gaussian istribution with the eviation σ. All these parameters of the response function apparently epen on primary ion beam energy,, an shoul be monotonically increasing functions of it. If we coul fin a perfect δ-layer, we might be able to fit the measure ata with R(z) to obtain these parameters for a certain an use them irectly to econvolve other SIMS profiles. Therefore, the ifficulty here is how to etermine the σ, λ g an λ from the measure ata justifiably, since there are no other techniques which we can use to check the results. We have to substantiate our choices through statistical an tren analysis. Before we stuy the R(z) of a specimen in a crystalline substrate, we first look at the R(z) of the same specimen in a corresponing amorphous substrate. This is because that the amorphous δ-layers are grown at very low temperature where segregation is negligible an only broaening ue to iffusion is present. Hence the amorphous R(z) shoul be qualitatively the same as the true crystalline one. We measure an amorphous boron δ- layer in amorphous silicon grown at room temperature by molecular beam epitaxy (MBE) with the range of from 335eV to kev an fitte the measure profiles with the R(z) in Eq. (3). The primary ions use are normally oxygen incient. The obtaine parameters are plotte against in Fig.. Within the error of measurements, we have σ amph = Ep 0.82, λ amph g = 0 an λ amph =.60Ep 0.54, where the lengths are in nm an in kev. This reveals that the SIMS mass transport effect itself has no contribution to λ amph g. We believe the same is true in crystalline case. Moreover, as the SIMS mass transport effect will be minimise at zero beam energy, it is reasonable to think that the λ amph is only ue to the SIMS effect an the resiual σ amph at = 0 comes entirely from the boron amorphous δ- layer itself. This is consistent with the well known fact that a conserve iffusive point source has a Gaussian spatial istribution. Consequently, the SIMS contribution to the amorphous primitive eviation, σ amph, can be obtaine from σs amph ( ) 2 = σ amph ( ) 2 σ amph (0) 2. Crystalline R(z) is built up by fitting the SIMS ata of a MBE grown boron δ-layer in a crystalline silicon substrate with the range of from 250eV to kev uner the same experimental conition as for the amorphous stuy. Consiering that the boning energy of atoms in a crystalline material is usually larger than its amorphous counterpart, we expect that both σ cryst an λ cryst are smaller than the amorphous ones an λ cryst g shoul remain zero. The boron δ-layer structure grown by MBE normally has a segregate interface at the near surface sie an a almost ieally abrupt interface at the other sie. This will enable us to get a reliable λ cryst from the fitting. For λ cryst g, the fit shows no significant energy epenence an we therefore take it as intrinsic to the sample. The results are also shown in Fig.. We obtain that σ cryst = Ep 0.75, an λ cryst =.39Ep These parameters are inee smaller than the amorphous ones, an again λ cryst vanishes as approaches zero. The σ cryst can be partly affecte by the sample structure in use an, inee, shows a finite intercept. Therefore, we take the intercept away an calculate the SIMS part, σ cryst, as σ cryst s ( ) 2 = σ cryst ( ) 2 σ cryst (0) 2. Using the obtaine parameters, we are now able to calculate sample inepenent SIMS response functions for 2

3 various an use them with our noise moel to econvolve some measure SIMS epth profiles by MaxEnt metho. A multiple boron δ-layer structure in silicon was grown at a constant 450C by MBE with the arrangement of, in turn from the surface, a pair of δ-layers 2nm apart, then another pair of δ-layers 5nm apart, etc. The intene boron concentration was 0 2 0atoms/cm 3 for all the layers, which is well above the bulk soli solubility limit [9,20]. We profile the sample using a normally incient oxygen beam at = 0.25, 0.50,.0, 2.0, 4.0, an 6.0keV, respectively. The epth calibration of profiles in silicon using oxygen primary ions has been iscusse an clarifie recently [2]. In our case, since the part we stuy is outsie the pre-equilibrium region an much longer than the transition epth we can align centrois of the profiles base on the principle that istance between centrois will not be change by any convolution process. The MaxEnt algorithm use in our calculation is from Ref. [22]. The measure profiles after conventional calibration an corresponing econvolve spatial istributions for the first two pairs of boron δ-layers are shown in Fig. 2(a) an (b), respectively. From Fig. 2(a) an (b), we can see that although the original SIMS profiles appear quite ifferently, the reconstructe spatial istributions agree well with each other. The area uner each feature is the same before an after econvolution, i.e., the number of the boron atoms for each feature is conserve. It is obvious that the epth resolution of the reconstructe spatial istributions has increase significantly. The δ-layers at z = 87nm which were separate by 2nm can just be istinguishe at = 2keV while the 5nm pair at z = 35nm are well separate at the maximum = 6keV we use. Note that the econvolve features become smoother as increases, i.e., better epth resolution can be achieve as gets lower. From the reconstructe opant istribution in Fig. 2(b), it is clearly shown that there is consierable boron segregation on the near surface sie of the layers. This kin of feature woul be automatically eliminate if a simplistic R(z) were use. There are some unexpecte small concentration spikes in the reconstructe ata at level of two to three orers lower than the peak height. We have no objective criteria to confirm their existence or take them away so they remain whether one likes them or not. length (nm) σ amph amph λ g amph λ σ cryst cryst λ Y(z) (0 20 atoms/cm 3 ) C(z) (0 20 atoms/cm 3 ) (a) z (nm) (b) z (nm) 2 kev kev 500 ev 250 ev 2 kev kev 500 ev 250 ev 6 kev 4 kev 6 kev 4 kev (kev) FIG.. The response function parameters, σ, λ g, an λ vs. primary beam energy. The open an soli symbols as well as the ashe an otte lines are for the amorphous an crystalline parameters, respectively. The lines are fitte with form a+b E c p for each of the parameters. FIG. 2. (a) The SIMS epth profiles at ifferent primary beam energy for the boron δ-layers in crystalline silicon substrate an (b) the corresponing spatial istributions reconstructe with the SIMS response function through a Max- Ent econvolution. Using Eqs. () an (2), we can easily work out the corresponing generalise Rayleigh limit of epth resolution, z, for two ajacent ieal δ-layers after econvolution if 3

4 we assume that z is limite only by the SIMS noise: z( ) 2 Y /2 C λ ( ) (4) where we take λ g = 0, λ σ s, an Y C is the original measure counts. Estimating with the typical peak counts Y C 0 4 in our experiment an the λ from Fig., we fin the resolution we have achieve in the above econvolution is within the limit. Maximising the entropy of spatial istribution gives us the most likely econvolve solution. It has a global tenency to sprea the solution onto the whole space range within a given noise eviation when total concentration is fixe. However, there is no constraint on the local changes of the istribution. For example, two spikes in the istribution contribute the same entropy no matter whether they are next to each other or not. This, unlike local constrains such as limiting the erivative of spatial istribution, makes possible the reconstruction of some abrupt features, e.g. δ-layers, superlattice structures, step oping materials, etc. log 0 Y(k) Boron, =250 ev measure convolve k (/nm) FIG. 3. The Fourier power spectrum, Y(k) 2, of the measure SIMS signal Y(z) vs. wave number, k. The ata are calculate from the 0.25keV SIMS boron profile an the convolve one from the corresponing reconstructe istribution. To have some further unerstaning on the MaxEnt econvolution metho, we compare the frequency components of the SIMS measure profile an the corresponing convolve one calculate from the reconstructe istribution. Fig. 3 shows the power spectra for the = 0.25keV case. Although the MaxEnt metho only manipulates ata in real space, the backgroun noise frequency components in the convolve profile are clearly suppresse by 6-7 orers. It is clearly shown that the high frequency features in the range of 0.75 to.50nm are retaine rather than eliminate if a conventional /f noise subtraction metho were use. Profiles of other have the similar results. This is consistent with Shannon s entropy loss theorem for signal passe through linear filters [23]. Consequently, the MaxEnt metho is not only able to reuce the backgroun noise level without using any artificial winows in real space or filters in frequency space but also capable of retaining sharp features which are statistically significant. We shoul emphasis that although the MaxEnt metho oes improve the epth resolution an recovery sharp features, it only provies us with the statistically evient information which the original SIMS profile contains. The MaxEnt econvolution is not an alternative to instrumental improvement, such as achieving lower primary beam energy an higher corresponing beam current. For example, one cannot istinguish whether there aretwocloseδ-layersorasingleδ- layerofhigherconcentration if the profile is measure with very high beam energies. This is because high energy profiling will not only have large λ but also lea to large epth increment an low sampling ensity, which will limit the information in theataatthe firstplace. Toreucethe epthincrement for higher sampling ensity in this situation requires significant reuctions in the primary beam current because of the high sputter yiel at high beam energy. This will lea to lower values for Y C. Therefore, the signal-noise ratio will ecrease, which limits the potential increase of epth resolution from the econvolution. We escribe a proceure to obtain sample inepenent response function which is suitable for use where the intrinsic SIMS effect is so small that sample relate features can be seen. Using this together with an empirically etermine noise moel, MaxEnt econvolution is performe to reconstruct self-consistent opant istributions from the SIMS epth profiles obtaine at ifferent beam energies. There are no ajustable parameters involve in obtaining the response function an econvolving the profiles. The epth resolution of the reconstructe istributions has been greatly improve an the segregation on the near surface sies is clearly emonstrate. With reconstructe true spatial istributions, further quantitative investigations on interface segregation, atomic iffusion, an relate problems will be straightforwar. Our methocanbeusetostuyotheropants,anthemax- Ent formalism may be extene to moels other than convolution. This work is supporte by the EPSRC funing uner the grant GR/K3275. The evelopment of the ion column use in this work was fune by the R. W. Paul Instrument Fun an Atomika GmbH. 4

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