LASER MICRO-MACHINING FOR 3D DIAMOND DETECTORS APPLICATIONS
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1 LASER MICRO-MACHINING FOR 3D DIAMOND DETECTORS APPLICATIONS B.Caylar 1, M.Pomorski 1, D.Tromson 1, P.Bergonzo 1, J.Alvarez 2, A.Oh 3,C. Da Via 3, I.Haughton 3, V.Tyzhnevy 3, T.Wengler 4 1 CEA-LIST, French Atomic Energy Commission, France 2 Laboratoire de Génie Electrique de Paris, France 3 University of Manchester, School of Physics and Astronomy, Manchester, UK 4 CERN, 1211 Geneva 23, Switzerland 1 st ADAMAS WORKSHOP 17 DEC 2012 benoit.caylar@cea.fr
2 CONTEXT Diamond detectors in High Energy Physics All LHC experiments already use diamonds for beam monitoring or as pixel detectors CMS is building Pixel Luminosity Telescope» 48 sccvd pixel modules (5 mm x 5 mm) Pixel Detectors ATLAS is building Diamond Beam Monitor Beam Monitors» 24 pcvd pixel modules (21 mm x 18 mm) Upgrade plans include diamond as candidate for innermost pixel tracker layer(s) Marko Mikuž Diamond Sensors, ICHEP (2012) 2
3 CONTEXT Luminosity previsions At LHC, luminosity will increase more and more in the following years 3
4 CONTEXT Radiation hardness is still an issue in diamond NIEL induces bulk defects Higher luminosity» Faster signal decrease Before irradiation After 1.2 x n.cm -2 After 1.97 x n.cm -2 1 Development of advanced detectors» Diamond detectors» Silicon 3D detectors Signal decrease Why won t we try to build the radiation hardest detector ever? A 3D Diamond Detector Collected charges [ke] benoit.caylar@cea.fr 1 st ADAMAS WORKSHOP 17 DEC
5 Current [µa] Current [µa] CONTEXT What is a 3D detector? Planar geometry 3D geometry 50µm 500µm Q MIP = e-h pairs Q MIP = e-h pairs 1,0 0,8 Average Lifetime = 250ns Average Lifetime = 2ns 15,0 12,5 Average Lifetime = 250ns Average Lifetime = 2ns 0,6 0,4 10,0 7,5 5,0 0,2 2,5 0, Time (ns) 0,0-0,2 0,0 0,2 0,4 0,6 0,8 Time (ns) Analytically calculated currents generated by a MIP benoit.caylar@cea.fr 1 st ADAMAS WORKSHOP 17 DEC
6 Collected Charge (fc) Collected Charge (fc) CONTEXT What is a 3D detector? Planar geometry 3D geometry 50µm 500µm Q MIP = e-h pairs Q MIP = e-h pairs 3,0 2,5 2,0 1,5 1,0 0,5 Average Lifetime = 250ns Average Lifteime = 2ns CCE drops by 53% 0, Time (ns) Analytically calculated charge collection 3,0 2,5 2,0 1,5 1,0 0,5 CCE drops by 5% 0, Time (ns) Average Lifetime = 250ns Average Lifteime = 2ns benoit.caylar@cea.fr 1 st ADAMAS WORKSHOP 17 DEC
7 BURRIED ELECTRODES Laser setup and fabrication Electrodes are processed using laser-induced graphitization Wavelength : 800nm Repetition rate : 1kHz Pulse length : 100fs Spot size : 10µm 7
8 BURRIED ELECTRODES Laser setup and fabrication Process improvement over the past two years Dec 2010 YAG Laser» Hollow, conical shape» Diameter : 100µm» Pitch : 300µm Feb 2011 Jun µm Apr 2012 benoit.caylar@cea.fr 1 st ADAMAS WORKSHOP 17 DEC
9 BURRIED ELECTRODES Laser setup and fabrication Process improvement over the past two years Dec 2010 UV Laser + x10 Lens» Diameter : 75µm» Pitch : 200µm Feb 2011 Jun µm Apr 2012 benoit.caylar@cea.fr 1 st ADAMAS WORKSHOP 17 DEC
10 BURRIED ELECTRODES Laser setup and fabrication Process improvement over the past two years 100µm Dec 2010 UV Laser + x20 Lens» Diameter : 20µm» Pitch : 150µm Feb 2011 Jun 2011 Apr 2012 benoit.caylar@cea.fr 1 st ADAMAS WORKSHOP 17 DEC
11 BURRIED ELECTRODES Laser setup and fabrication Process improvement over the past two years 100µm 100µm Dec 2010 Femtosecond laser» Diameter : 5µm» Pitch < 35µm Feb 2011 Jun µm 100µm Apr 2012 benoit.caylar@cea.fr 1 st ADAMAS WORKSHOP 17 DEC
12 BURRIED ELECTRODES Why is femtosecond laser so much better? A two-step process Producing a graphitic seed at the surface» Excitation of a large number of valence electrons via multi-photon absorption» Energy barrier decreases» Phase transition Diamond- Graphite Propagation of laser supported graphitic wave No heat accumulation T.V. Kononenko et Al Rus nanotech (2010) benoit.caylar@cea.fr 1 st ADAMAS WORKSHOP 17 DEC
13 Intensity (a.u) Intensity (a.u) BURRIED ELECTRODES Structural characterization Intensity (a.u) Raman Analysis 1000 Electrode cm cm-1 Diamond Wavenumber (cm-1) Wavenumber (cm-1) Wavenumber (cm-1) Border EHT = 5kV WD = 4.9mm Mag = 11.85k X 13
14 BURRIED ELECTRODES Structural characterization Electrode mapping using Conductive probe AFM R 1µm 1µm AFM mapping Resistance mapping benoit.caylar@cea.fr 1 st ADAMAS WORKSHOP 17 DEC
15 BURRIED ELECTRODES Structural characterization Electrode mapping using Conductive probe AFM R 200 kω 1µm 1µm ρ ~ 1 Ω.cm Resistance distribution in the mapping area Resistance mapping benoit.caylar@cea.fr 1 st ADAMAS WORKSHOP 17 DEC
16 3D DIAMOND DETECTOR Final detector Optical microscopy 125µm Rectangular unit cell 50µm sccvd sample Courtesy of CERN 16
17 3D DIAMOND DETECTOR Final detector Optical microscopy Crossed polarizers (Surface) 125µm Rectangular unit cell 50µm sccvd sample Courtesy of CERN» Graphitization process wasn t optimized 70% success rate 17
18 3D DIAMOND DETECTOR Final detector Optical microscopy Crossed polarizers (In Bulk) 125µm Rectangular unit cell 50µm sccvd sample Courtesy of CERN» Graphitization process wasn t optimized 70% success rate 18
19 3D DIAMOND DETECTOR Final detector Optical microscopy 45 Tilt 125µm Rectangular unit cell 50µm sccvd sample Courtesy of CERN» Graphitization process wasn t optimized 70% success rate 19
20 Current (na) 3D DIAMOND DETECTOR Electrical characterization I(V) measurement 0,6 0,4 Increasing voltage Decreasing voltage 0,2 0,0-0,2-0, Voltage (V) 20
21 3D DIAMOND DETECTOR Characterization using protons micro-beam Experimental Zagreb 4,5 MeV protons µ-beam (1µm resolution) 21
22 3D DIAMOND DETECTOR Characterization using protons micro-beam IBIC mapping HV = +1V» The dead area is due to a broken strip 22
23 3D DIAMOND DETECTOR Characterization using protons micro-beam IBIC mapping HV = +1V» All connected colums are active 23
24 3D DIAMOND DETECTOR Characterization using protons micro-beam IBIC mapping Increasing positive bias +1V +5V +40V +100V» CCE is strongly non uniform 24
25 3D DIAMOND DETECTOR Characterization using protons micro-beam IBIC mapping Increasing negative bias -1V -5V -40V -100V» Similar behaviour with negative polarity» Probably due to bad contact (Al) quality 25
26 Normalized Counts Normalized Counts 3D DIAMOND DETECTOR Characterization using protons micro-beam IBIC mapping Charge Collection efficiency spectra 1,0 0,8-1V -5V -40V -100V 1,0 0,8 +1V +5V +40V +100V 0,6 0,6 0,4 0,4 0,2 0,2 0, ADC Channels 0, ADC Channels Negative biases Positive biases 26
27 3D DIAMOND DETECTOR Characterization using protons micro-beam IBIC mapping Focusing on a high CCE area 27
28 Normalized Counts Normalized Counts 3D DIAMOND DETECTOR Characterization using protons micro-beam IBIC mapping Focusing on a high CCE area 1,0 0,8-1V -5V -40V -100V 1,0 0,8 +1V +5V +40V +100V 0,6 0,6 0,4 0,4 0,2 0,2 0, ADC Channels 0, ADC Channels Negative biases Positive biases benoit.caylar@cea.fr 1 st ADAMAS WORKSHOP 17 DEC
29 Y Position (mm) 3D DIAMOND DETECTOR Characterization using synchrotron micro-beam Y Position (mm) Mapping using 11.5keV photons (10µm resolution) -0,6 HV = +10V 6,0E+04-0,8 6,0E+04-0,7-0,8-0,9 5,0E+04 4,0E+04-0,9 5,0E+04 4,0E+04-1,0 3,0E+04-1,0 3,0E+04-1,1-1,2 2,0E+04-1,1 2,0E+04-1,3-8,1-8,0-7,9-7,8-7,7-7,6-7,5-7,4 1,0E+04-7,7-7,6-7,5-7,4 1,0E+04 X Position (mm) X Position (mm)» Response homogeneity is OK» There are hot spots that need to be investigated (material related) 29
30 3D DIAMOND DETECTOR Summary We managed to Produce graphitic electrodes with suitable dimensions for detectors applications Check that electrodes conductive enough and allow 100% CCE Check that device can be used in both single particle and DC measurements Now we need to Optimize contacts (see Alex talk) Understand these hot spots Irradiate samples and measure their radiation hardness 30
31 Thanks for your attention! 31
32 3D DIAMOND DETECTOR Acknowledgements CEA-LIST Nicolas Tranchant Hassen Hamrita Nicolas Vaissière Céline Gesset External co-workers Cinzia Da Via Lin Li David Whitehead Thorsten Wengler Natko Skukan Veljko Grilj Milko Jakšić Stéphanie Hustache Kewin Desjardins 32
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