PACS: Fg, Kp, Ey

Transcription

1 * 1) 1) 2) 3) 1) 1) (, ) 2) (, ) 3) (, ) ( ; ) GaN, AlGaN/GaN/InGaN/GaN., GaN., GaN. GaN,., GaN. :,,, PACS: Fg, Kp, Ey 1 GaN (HEMT) [1,2],, 2 40 GHz, [3 5]. GaN HEMT, [6 14].,.,. Wu [15] Klein [16]. Binari [10,11] GaN HEMT GaN., Hu [13],.,,. Hu [7]..,,, [3,17,18]. GaN HEMT AlGaN/GaN * ( : , ) ( : BK ). ychyu@ntu.edu.cn c 2012 Chinese Physical Society

2 HEMT [8,19,20]. Wang [21] (DH-HEMT), GaN HEMT.,, AlGaN/GaN/InGaN/GaN HEMT, GaN, DH- HEMT., GaN HEMT. InGaN, GaN, GaN, 2DEG., InGaN InN InGaN/GaN [2], GaN 2DEG InGaN,., 2, InGaN DH- HEMT HEMT.,, (hydrodynamic) [19], DH-HEMT, Canali [25] GaN. 2 1 Al 0.3 Ga 0.7 N/GaN/In 0.1 Ga 0.9 N /GaN DH-HEMT, 1 µm. Liu [3,22] 6 nm InGaN DH- HEMT. (6, 10, 20 nm) GaN. III III-V, [23], (2DEG). [24],, AlGaN/GaN cm 2, InGaN/GaN cm 2. [10,11,24], GaN HEMT [16],.,, N at = cm 3, σ T = cm 2, 2.2 ev. 2 6, nm GaN DH-HEMT, GaN HEMT.,. 2, GaN, 1 AlGaN/GaN/InGaN/GaN DH-HEMT 2 GaN DH-HEMT

3 Ô n Æ Acta Phys. Sin. Vol. 61, No. 20 (2012) ý(j?ø 3.1 GaN C InGaN Ú 20 nm GaN DH-HEMT 3» 4 N C 4 ý ² å P > Ö Ù. ã 3 k ã 4 > Ø Vds = 10 V,» 4 > Ø p L«åP>Ö Ý, Þ «âå«åp>ö ݲwpuÓ Ý Ù «, ù ÑkÜ «² ² Óâ «²w u 6 nm GaN þ Ý 6, 10 Vgs = 0 V (J. ã 3 I«>fÓâ, 10 nm GaN DH-HEMT þý 9>f A ã 3 «GaN GaN 3»4NC 4 ý, )9>f A Ì «. dã 3, 3 6 Ú 10 nm GaN DH-HEMT, 6 nm GaN DH-HEMT ² DH-HEMT. Óâ «3 GaN ±. 3 Þ ««, ²>Ö y Ù GaN þý 'XXL 1 «. þ Ý, 9>f A«åP>Ö ÝeüÒ, ~X ²Ó 'ü 0.1 ±e, y Ý 20 nm HEMT ' 6 nm 15%. ± wñ, du GaN k /\r þf² åpuå, ~ 9>fl 4z ³^J, GaN p> e Bß Uå, 3 N ², cù»4nc 4 ý åp >f ÝwÍeü, l k /~ 9>f A. L1 9>f A«²>Ö y Ù þý/nm 3.2 ²>Ö Ý/cm nm 56.0 nm 73.6 nm 96.0 nm nm 49.8 nm 68.0 nm 91.0 nm nm 40.0 nm 56.8 nm 81.2 nm GaN GaN þý g\9 A þ Ý 6, 10 Ú 20 nm GaN DH-HEMT > Xã 4 «, Ù ã Vds 0 10 V, ã Ù 3 K > Ü. 6 nm DH-HEMT 3 Vds = V äk ms/mm K >, 10 nm DH-HEMT 3 Vds = V äk ms/mm K ã3»4ncåp>ö Ùã GaN þý (a) 6 nm; ã4 (b) 10 nm; (c) 20 nm GaN DH-HEMT > ã

4 Ô n Æ Acta Phys. Sin. Vol. 61, No. 20 (2012) >, 20 nm DH-HEMT Ø 3K > y. X þýo\, K > 3ügÑ m¼ Uþò U L 3Ñ Uþ, l Ü >f UþwÍpu9 y ²w~f±, ùl«ì g\9 ²ï ²þÄU A X þýo\é ²w ³. ß/wÑ, 9:«wÍ GaN 9>f. lã 5 ± ª³, þ Ý 6, 10 Ú 20 nm GaN 9: % ÝÑk,p (6, 10, 20 nm O 891, DH-HEMT >f Ý Ùã OXã 5(a) (c) 899 Ú 940 K). 9: )Ån >f3 4NC «. ã Ñ«ì >f Ý p 9: É9>f A K u»4nc, ±d? ² «(Ù Ú«$ «). 9>f A åp >f3> ^el ² u Ñ5, 3 du3ì º >ØØ U >f>³u=z ÄU L, É! ² Úì º UÓ '~, ù HEMT ì Ñ, Ü UþC >f9u, =g\9 A. d SÜ> Or. > rý L ½þ?, >f u GaN L, > þ ì é>fåpuår 9> f AwÍ~,»4 4 m >{C, l d»4 4> Cz u GaN, ± GaN 4 ý. þ ì 9: 9: 4 dóu? ²u Ñ >fäk p ³U, l,p. ì 9: %>f Ý 9: wícz ', >f Ý,p ± ÑØO. dã 5(a), (b), (c) é', þýo\uwí/ g\9 A ~f, l 9:, ù U K > y ~f± Ï. 3.3 GaN DH-HEMT 65 GaN þý 6, 10 Ú 20 nm GaN DH- HEMT ÚDÚüÉ ( HEMT ÑÑA5 Xã 6 «. kñña5 3 Vgs = 0 V e ÿ. X ã 6 «, 20 nm DH-HEMT Ú> ma/mm, u 10 nm DHHEMT 1390 ma/mm, 6 nm DH-HEMT 1337 ma/mm, udúüé ( HEMT ã 5 9 : N C > f Ý Ù ã GaN þý ã6 (a) 6 nm; (b) 10 nm; (c) 20 nm GaN DH-HEMT ÑÑA5 ã

5 1145 ma/mm. 10 V [7], GaN 2.7 kv/cm [26,27], 75 kv/cm [21],. GaN,,. GaN,,. 4 AlGaN/GaN/InGaN/GaN DH-HEMT, DH-HEMT, DH-HEMT. GaN, GaN,. GaN,,., GaN,,., GaN,. [1] Mishra U K, Parikh P, Wu Y F 2002 Proc. IEEE [2] Liberis J, Matulionienė I, Matulionis A, Šermukšnis E, Xie J, Leach J H, Morkoç H 2009 Phys. Stat. Sol. A [3] Liu J, Zhou Y, Zhu J, Lau K M, Chen K J 2006 IEEE Electr. Dev. Lett [4] Medjdoub F, Derluyn J, Cheng K, Leys M, Degroote S, Marcon D, Visalli D, van Hove M, Germain M, Borghs G 2010 IEEE Electr. Dev. Lett [5] Brown D F, Shinohara K, Williams A, Milosavljevic I, Grabar R, Hashimoto P, Willadsen P J, Schmitz A, Corrion A L, Kim S, Regan D, Butler C M, Burnham S D, Micovic M 2011 IEEE T. Electron. Dev [6] Hu W D, Chen X S, Quan Z J, Xia C S, Lu W, Yuan H J 2006 Appl. Phys. Lett [7] Hu W D, Chen X S, Quan Z J, Xia C S, Lu W, Ye P D 2006 J. Appl. Phys [8] Faqir M, Bouya M, Malbert N, Labat N, Carisetti D, Lambert B, Verzellesi G, Fantini F 2010 Microelectron. Reliab [9] Hu W D, Chen X S, Yin F, Zhang J B, Lu W 2009 J. Appl. Phys [10] Binari S C, Ikossi K, Roussos J A, Kruppa W, Doewon P, Dietrich H B, Koleske D D, Wickenden A E, Henry R L 2001 IEEE T. Electron. Dev [11] Binari S C, Klein P B, Kazior T E 2002 Proc. IEEE [12] Vetury R, Zhang N Q, Keller S, Mishra U K 2001 IEEE T. Electron. Dev [13] Hu X, Koudymov A, Simin G, Yang J, Khan M A, Tarakji A, Shur M S, Gaska R 2001 Appl. Phys. Lett [14] Kuzmik J, Javorka R, Alam A, Marso M, Heuken M, Kordos P 2002 IEEE T. Electron. Dev [15] Wu X H, Brown L M, Kapolnek D, Keller S, Keller B, DenBaars S P, Speck J S 1996 J. Appl. Phys [16] Klein P B, Binari S C, Ikossi K, Wickenden A E, Koleske D D, Henry R L 2001 Appl. Phys. Lett [17] Tang J, Wang X L, Chen T S, Xiao H L, Ran J X, Zhang M L, Hu G X, Feng C, Hou Q, Wei M, Li J M, Wang Z G th International Conference on Solid-State and Integrated-Circuit Technology Beijing, China, Oct p1114 [18] Zhang S, Li M C, Feng Z H, Liu B, Yin J Y, Zhao L C 2009 Appl. Phys. Lett [19] Faraclas E W, Anwar A F M 2006 Solid State Electron [20] Wang L, Hu W D, Chen X S, Lu W 2010 Acta Phys. Sin (in Chinese) [,,, ] [21] Wang L, Hu W D, Chen X S, Lu W 2010 J. Appl. Phys [22] Liu J, Zhou Y, Zhu J, Cai Y, Lau K M, Chen K J 2007 IEEE T. Electron. Dev [23] Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J 1999 J. Appl. Phys [24] Braga N, Mickevicius R, Gaska R, Hu X, Shur M S, Khan M A, Simin G, Yang J 2004 J. Appl. Phys [25] Wang L, Hu W D, Chen X S, Lu W 2012 J. Electron. Mater [26] Barry E A, Kim K W, Kochelap V A 2002 Appl. Phys. Lett [27] Wang X D, Hu W D, Chen X S, Lu W 2012 IEEE T. Electron. Dev

6 Investigation on the current collapse effect of AlGaN/GaN/InGaN/GaN doubleheterojunction HEMTs Yu Chen-Hui 1) Luo Xiang-Dong 1) Zhou Wen-Zheng 2) Luo Qing-Zhou 3) Liu Pei-Sheng 1) 1) ( Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong , China ) 2) ( College of Physics Science and Technology, Guangxi University, Nanning , China ) 3) ( School of Remote Sensing, Nanjing University of Information Science and Technology, Nanjing , China ) ( Received 19 July 2012; revised manuscript received 5 August 2012 ) Abstract A series of AlGaN/GaN/InGaN/GaN double-heterojunction high-electron-mobility-transistors (DH-HEMT) is fabricated with GaN channel layer thicknesses from 6 nm to 20 nm by two-dimensional (2D) numerical simulations. A new idea for optimizating of DH-HEMT structure is proposed. The hot electron effect and self-heating effect are investigated by using hydrodynamic model. Current collapse and negative differential conductance are observed to be directly relevant to GaN channel layer thickness. DH-HEMT with thicker GaN channel layer can confine electrons better in channel, which significantly diminishes the penetration ability of hot electrons from channel layer to buffer layer under high voltage. Increasing the thickness of GaN channel layer appropriately can effectively restrict current collapse and negative differential conductance, and consequently improve device performance under high voltage condition. Keywords: double-heterojunction high-electron-mobility-transistors, current collapse, hot electron effect, selfheating effect PACS: Fg, Kp, Ey * Project supported by the National Natural Science Foundation of China (Grant Nos , ) and the Natural Science Foundation of Jiangsu Province, China (Grant No. BK ). ychyu@ntu.edu.cn