Evaluation of temperature characteri high-efficiency InGaP/InGaAs/Ge trip solar cells under concentration

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1 JAIST Rposi ttps:dspac.j Titl Evaluation of tmpratur caractri ig-fficincy InGaPInGaAsG trip solar clls undr concntration Nisioka Knsuk; Takamoto Tatsuya; Autor(s Kaniwa Minoru; Uraoka Yukiaru; Fuy Citation Solar Enrgy Matrials and Solar Cl Issu at Typ Journal Articl Txt vrsion autor URL Rigts ttp:dl.andl.nt Elsvir B.V., Knsuk Nisioka, Tat Takamoto, Takaaki Agui, Minoru Kani Uraoka and Takasi Fuyuki, Solar En and Solar Clls, 85(3, 005, ttp: 048 scription Japan Advancd Institut of Scinc and

2 For corrspondnc Nam: Knsuk Nisioka Addrss: Graduat Scool of Matrials Scinc, Nara Institut of Scinc and Tcnology Takayama, Ikoma, Nara , Japan TlFax Evaluation of Tmpratur Caractristics of Hig Efficincy InGaPInGaAsG Tripl-Junction Solar Clls undr Concntration Knsuk Nisioka 1, Tatsuya Takamoto, Takaaki Agui, Minoru Kaniwa, Yukiaru Uraoka 1 and Takasi Fuyuki 1 1 Graduat Scool of Matrials Scinc, Nara Institut of Scinc and Tcnology Takayama, Ikoma, Nara , Japan SHARP Corporation 8-1 Hajikami, Sinjo-co, Kitakatsuragi-gun, Nara , Japan ABSTRACT Tmpratur caractristics of t opn-circuit voltag (V oc wr invstigatd in t tmpratur rang from 30 o C to 40 o C for t InGaPInGaAsG tripl-junction clls. Also, singl-junction clls tat ad t similar structur to t subclls in t tripl-junction clls wr studid. In t ig-tmpratur rang (from 170 C to 40 C, t tmpratur cofficints of V oc of t InGaPInGaAsG tripl-junction solar cll (dv oc dt wr diffrnt from tos in t low-tmpratur rang (from 30 C to 100 C. Tis is bcaus poto-voltag from t G subcll bcoms almost 0 V in t ig-tmpratur rang. It was found tat t opn-circuit voltag of a G singl-junction cll rducd to almost 0V tmpraturs ovr 10 o C undr 1 sun condition. KEYWORS: multi-junction solar cll, tmpratur cofficint, concntration, Frsnl lnss 1

3 1. INTROUCTION Multi-junction solar clls consisting of InGaP, (InGaAs and G ar known as supr-ig fficincy and ar now usd for spac applications. T multi-junction clls lattic-matcd to G substrats av bn improvd and t convrsion fficincy as racd 31% (AM1.5G by t lattic-matcd configuration [1, ]. Ligt concntration is on of t important issus for t dvlopmnt of an advancd PV systm using ig-fficincy solar clls. Hig-fficincy multi-junction clls undr ig-concntration av bn invstigatd for trrstrial application [3, 4]. Also, for low-concntration opration, multi-junction clls av bn invstigatd for spac satllit us [5-7]. It is considrd tat t tmpratur of solar clls considrably riss undr ligt concntrating oprations. T solar clls installd in t probs for sarcing plants locatd in t sort distanc from t sun lik Mrcury and Vnus nd to oprat undr t nvironmnt of ig tmpratur xcding 00 o C. Howvr, tmpratur caractristics of multi-junction solar clls undr concntration av not bn valuatd in dtail. W valuatd tmpratur dpndnc of lctrical caractristics of InGaPInGaAsG tripl-junction solar clls undr concntration.. EXPERIMENT T ligt from t solar simulator (Ligt sourc: X lamp was adjustd for 1 sun (AM 1.5G, 100 mwcm, and was focusd by a Frsnl lns. T concntration ratio was dfind by dividing t sort-circuit currnt (I sc undr concntratd ligt by t I sc undr 1 sun illumination. T concntration ratio was varid from 1 sun to 14 suns. T cll was attacd to t tmpratur control stag by soldr wit ig-at conductivity. T tmpratur dpndncs of cll caractristics wr invstigatd in t tmpratur rang

4 from 30 C to 40 C. Figur 1 sows a scmatic illustration of t InGaPInGaAsG tripl-junction cll valuatd in tis study. T subclls (InGaP junction, InGaAs junction and G junction wr grown on a p-typ G substrat using mtal-organic cmical vapor dposition. An In 0.49 Ga 0.51 P top subcll, an In 0.01 Ga 0.99 As middl subcll, and a G bottom subcll ar all lattic-matcd. Bot two tunnling junctions consist of a C-dopd AlGaAs and a Si-dopd InGaP layrs. T cll siz was 10 mm x 10 mm. T cll as an optimal lctrod structur for 1 sun opration (Grid pitc of lctrod: 100 m. Tn, t dcras in FF (fill factor du to sris rsistanc was obsrvd undr ig concntration xcding 10 suns. 3. RESULT AN ISCUSSION Figur sows t tmpratur dpndnc of opn-circuit voltag (V oc of t InGaPInGaAsG tripl-junction solar cll. For all concntration ratios, V oc dcrasd wit incrasing tmpratur. V oc incrasd wit incrasing concntration ratio. T currnt dnsity-voltag (J-V caractristic of solar clls is givn by qv J = J 1 nkt 0 xp J sc, (1 wr I 0, q, n, k and T ar t saturation currnt, lmntary carg, diod idality factor, Boltzmann constant and absolut tmpratur, rspctivly. From q. (1, V oc (J=0 is givn by nkt J sc V = ln + 1 oc. ( q J 0 From q. (, it is considrd tat t tmpratur caractristic of t saturation currnt (J 0 rmarkably influncs t tmpratur caractristic of V oc. T J 0 is givn by 3

5 4 + + = cos( sin( ( sin( cos( ( p p p p A i x x S x x S N n q J cos( sin( ( sin( cos( ( n n n n i x x S x x S N n q, (3 wr n i is t intrinsic carrir concntration, N A and N ar t accptor and donor concntrations, S and S ar t surfac-rcombination vlocitis in t n- and p-typ matrials, x p and x n ar t ticknss of t p- and n-typ layrs, and ar t diffusion constants for lctrons and ols, and and ar liftims for lctrons and ols, rspctivly. J 0 dpnds strongly on t T troug its proportionality to t squar of t n i. T n i is givn by ( kt E m m kt M M n g v c i = xp ( ( π, (4 wr M c and M v ar t numbr of quivalnt minima in t conduction and valnc bands, is Planck s constant, and m * and m * ar t ffctiv masss of t lctrons and ols, and E g is t band gap, rspctivly. From quations (, (3 and (4, it is found tat t dcras in V oc wit incrasing tmpratur ariss mainly from cangs in n i. T valu of J 0 incrass xponntially wit dcrasing 1T, and V oc dcrass almost linarly wit incrasing T. Morovr, t V oc incrasd wit incrasing concntration ratio. From q. (, V oc will incras logaritmically wit radiation intnsity [8-11]. In t low-tmpratur rang (from 30 C to 100 C and t ig-tmpratur rang (from 170 C to 40 C, t tmpratur cofficints of V oc (dv oc dt wr diffrnt. T bordring tmpratur (at wic t tmpratur cofficint of V oc cangd siftd to t igr tmpratur wit incrasing concntration ratio as sown in Fig.. T tmpratur cofficints of V oc (dv oc dt wr stimatd by linar rgrssion, and t bordring

6 tmpratur was stimatd from t intrsction of rgrssion lins in t low- and ig-tmpratur rang. At 1 sun, t tmpratur cofficints of V oc wr stimatd to b V C in t low-tmpratur rang and V C in t ig-tmpratur rang, and t bordring tmpratur was C. On t otr and, t bordring tmpratur incrasd to C at 14 suns. In ordr to invstigat t diffrnc of tmpratur cofficint in t V oc for t tripl-junction clls, t tmpratur caractristics of t singl-junction solar clls consisting of InGaP, GaAs and G wr valuatd. T structurs (ticknss of ac layr, carrir concntration, and so fort of t singl-junction (InGaP, GaAs and G solar clls av striking rsmblancs to tos of ac subcll in t InGaPInGaAsG tripl-junction solar cll. T tmpratur dpndnc of V oc for t InGaP singl-junction solar cll, t GaAs singl-junction solar cll and t G singl-junction solar cll ar sown in Figs. 3 (a, (b and (c, rspctivly. In all clls, V oc dcrasd wit incrasing tmpratur and incrasd wit incrasing concntration ratio. It was found tat t V oc of t G singl-junction solar cll dcrasd clos to 0 V in t tmpratur rang ovr 10 C at 1 sun. Figur 4 sows t tmpratur dpndnc of currnt-voltag (I-V caractristics in t G singl-junction cll undr 1 sun opration. It was found tat t G singl-junction cll could not oprat as a solar cll in t ig tmpratur rang ovr 10 o C undr t 1 sun condition. Howvr, t V oc of t G singl-junction cll incrasd wit incrasing concntration ratio and t tmpratur at wic V oc bcam 0 V ros as sown in Fig.3 (c. Bcaus t V oc of t InGaPInGaAsG tripl-junction solar cll is t sum of t poto-voltags of t top (InGaP, middl (InGaAs and bottom (G subcll, t tmpratur cofficint of V oc for t tripl-junction solar cll is simply t sum of t tmpratur cofficints of V oc of t top, middl and bottom subclls. T tmpratur cofficints for all clls at various concntration ratios ar summarizd in Tabl 1. T sum 5

7 total of t tmpratur cofficints of V oc of t InGaP, GaAs and G singl-junction clls agrd wll wit t tmpratur cofficint of V oc of t InGaPInGaAsG tripl-junction solar cll in t low-tmpratur rang. Morovr, t sum total of t tmpratur cofficints of V oc of t InGaP and GaAs singl-junction clls agrd wll wit t tmpratur cofficints of V oc of t tripl-junction solar cll in t ig-tmpratur rang. It is xpctd tat t G junction (G subcll is not abl to contribut to t poto-voltag of t InGaPInGaAsG tripl-junction solar cll in t ig tmpratur rang, and t sum total of t poto-voltags from only t InGaP and t InGaAs junctions dominat t V oc of t tripl-junction solar cll in t ig-tmpratur rang ovr 10 C undr t 1 sun condition. T bordring tmpratur incrasd wit incrasing concntration ratio as sown in Fig.. Trfor, it is xpctd tat t G junction can contribut to t V oc of t tripl-junction solar cll up to t igr tmpratur rang wit incrasing concntration ratio. Figur 5 sows t bordring tmpratur as a function of concntration ratio. W can prdict t maximum tmpratur tat t G junction can xrt on t poto-voltag of t tripl-junction solar cll at a crtain concntration ratio. T bordring tmpratur sows t tmpratur ovr wic an advantag of t tripl-junction clls compard to t dual-junction clls is lost. For oprating tmpratur ovr 00 C, concntration ratio of svral undrd tims is rquird to maintain t poto-voltag from t G junction. T J sc of t InGaPInGaAsG tripl-junction cll valuatd in tis study is limitd by t top subcll (InGaP subcll sort-circuit currnts. T tmpratur cofficint of J sc in t tripl-junction solar cll (dj sc dt is qual to t tmpratur cofficint of sort-circuit currnt in t top subcll, and J sc in t tripl-junction solar cll incrass linarly wit incrasing tmpratur [11]. T incras in J sc wit incrasing tmpratur is lss tan t dcras of V oc. T convrsion fficincy of t tripl-junction solar cll is gratly 6

8 influncd by V oc in t ig tmpratur conditions. Trfor, t contribution of poto-voltag from bottom junction (G junction is vry important for t convrsion fficincy of tripl-junction solar cll. Tn, it is considrd tat t dvlopmnt of tripl-junction solar cll tat as bottom subcll consistd of widr band gap matrials tan G is also ffctiv for t ig tmpratur oprations. Evn t low concntration ratio of 14 suns was confirmd to b ffctiv for t incras in V oc of t tripl-junction solar cll at t ig tmpratur. By using t ligt concntrating tcniqu, it is possibl to nanc t ffct tat t G junction xrts on t poto-voltag of t tripl-junction solar cll in t ig-tmpratur rang. 4. CONCLUSION In t ig-tmpratur rang (from 170 C to 40 C, t tmpratur cofficints of V oc of t InGaPInGaAsG tripl-junction solar cll wr diffrnt from tos in t low-tmpratur rang (from 30 C to 100 C. Tis is bcaus poto-voltag from t G subcll bcoms almost 0 V in t ig-tmpratur rang. Bcaus t G subcll could contribut to t V oc of t tripl-junction cll to t igr tmpratur wit incrasing concntration ratio, t bordring tmpratur at wic t tmpratur cofficint of V oc cangd siftd to t igr tmpratur wit incrasing concntration ratio. By using a ligt concntrating tcniqu, it is possibl to nanc t ffct tat t G junction xrts on t poto-voltag of t tripl-junction solar cll in t ig-tmpratur rang. Morovr, by invstigating t bordring tmpratur, w can prdict t maximum tmpratur tat t G junction can xrt on t poto-voltag of t tripl-junction solar cll at a crtain concntration ratio. Ts rsults ar vry usful for t dvlopmnt of concntrator systms tat dmonstrat ig fficincy in ig-tmpratur conditions. 7

9 ACKNOWLEGMENTS Tis work was partially supportd by t Nw Enrgy and Industrial Tcnology vlopmnt Organization undr t Ministry of Economy, Trad and Industry, Japan. 8

10 REFERENCES 1 J. M. Olson, S. R. Kurtz and A. E. Kibblr: Appl. Pys. Ltt. 56 ( T. Takamoto, T. Agui, E. Ikda and H. Kurita: Proc. t 8t IEEE Potovoltaic Spcialists Conf., Ancorag, ( H.L. Cotal,.R. Lillington, J.H. Ermr, R.R. King, N.H. Karam: Proc. t 8t IEEE Potovoltaic Spcialists Conf., Ancorag, ( A.W. Btt, F. imrot, G. Lang, M. Musl, R. Bckrt, M. Hin, S.V. Risn and U. Scubrt: Proc. t 8t IEEE Potovoltaic Spcialists Conf., Ancorag, ( C.J Gldrloos, C. Assad, P.T. Balcwicz, A.V. Mason, J.S. Pow, T.J. Prist and J.A. Scwartz: Proc. t 8t IEEE Potovoltaic Spcialists Conf., Ancorag, ( M.J O Nill, A.J Mcanal, M.F Piszczor, M.I Esknazi, P.A Jons, C. Carrington,.L Edwards and H.W Brandorst: Proc. t 8t IEEE Potovoltaic Spcialists Conf., Ancorag, ( Krut, G.S. Glnn, B. Bailor, M. Takaasi, R.A. Srif,.R. Lillington and N.H. Karam: Proc. t 8t IEEE Potovoltaic Spcialists Conf., Ancorag, ( S. M. Sz: Pysics of Smiconductor vics nd d., (A WILEY-INTERSCIENCE PUBLICATION, A. L. Farnbruc and R. H. Bub: Fundamntals of Solar Clls, (ACAEMIC PRESS, INC., Sara R. Kurtz, P. Fain and J. M. Olson: J. Appl. Pys, 68 ( J. Fridman: Proc. t 5t IEEE Potovoltaic Spcialists Conf., Wasington,.C., (

11 Fig. 1. Scmatic illustration of tripl-junction solar cll. Fig.. Fig. 3. Tmpratur dpndnc of V oc of tripl-junction solar cll (Solid lins and brokn lins ar t rgrssion lins in t low- and ig-tmpratur rang, rspctivly. Tmpratur dpndnc of V oc of (a InGaP cll, (b GaAs cll and (c G cll. Fig. 4. Tmpratur dpndnc of I-V caractristics of t G singl-junction solar cll at 1 sun. Fig. 5. T bordring tmpratur as a function of concntration ratio. 10

12 Tabl 1. Tmpratur cofficints of V oc (dv oc dt Tripl-junction at low tmpratur 1sun (V 7 suns (V 14 suns (V Tripl-junction at ig tmpratur InGaP GaAs G InGaP + GaAs + G InGaP + GaAs

13 Fig. 1 K. Nisioka 1

14 o C V oc (V sun 7 suns 14 suns o C o C Tmpratur ( o C 1 sun low-tmpratur: V oc = T ( 1 sun ig-tmpratur: V oc = T ( 7 suns low-tmpratur: V oc = T ( 7 suns ig-tmpratur: V oc = T ( 14 suns low-tmpratur: V oc = T ( 14 suns ig-tmpratur: V oc = T ( Fig.. K. Nisioka 13

15 V oc V (a InGaP 1sun 7 suns 14 suns Tmpratur ( o C 1. (b GaAs 1 V oc (V sun 7 suns 14 suns Tmpratur ( o C V oc (V (c G 1sun 7 suns 14 suns Tmpratur ( o C Fig. 3 K. Nisioka 14

16 0.05 Currnt (A o C 40 o C 60 o C 80 o C Voltag (V Fig K. Nisioka

17 40 Bordring Tmpratur ( o C Concntration Ratio Fig. 5 K. Nisioka 16

Nishioka, K; Takamoto, T; Agui, T; K Author(s) Uraoka, Y; Fuyuki, T. Solar Energy Materials and Solar Cel 57-67

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