arxiv: v1 [cond-mat.mtrl-sci] 23 Sep 2011

Transcription

1 Emergence of noncentrosymmetric topological insulating phase in BiTeI under pressure M. S. Bahramy 1, B. -J. Yang 1, R. rita 1,2, and N. Nagaosa 1,2,3 arxiv: v1 [cond-mat.mtrl-sci] 23 Sep Correlated Electron Research Group (CERG), RIKEN-SI, Wako, Saitama , Japan 2 Department of pplied Physics, University of Tokyo, Tokyo , Japan 3 Cross-Correlated Materials Research Group (CMRG), RIKEN-SI, Wako, Saitama , Japan Electronic address: bahramy@riken.jp 1

2 Topological insulators (TI s) are a new state of quantum matter in which the nontrivial topological order of bulk states gives rise to the formation of gapless edge or surface states. Common to all TI materials, discovered so far, is the inversion (I) symmetry of their bulk crystal structure, dictating spin degeneracy among all the Kramer s doublets at each k-point. Without I-symmetry, such a spin degeneracy is lifted, thereby leading to many novel phenomena, such as the spin Galvanic effect and the spin Hall effect. Through a set of sophisticated firstprinciples calculations, here we show that BiTeI, a layered noncentrosymmetric compound with a giant bulk Rashba splitting turns into a TI under a reasonable pressure. It is therefore proposed as the first TI candidate lacking I-symmetry. The material is shown to exhibit several unique features, not ever seen in I- symmetric TI systems, such as (i) a highly pressure-tunable giant Rashba spin splitting, (ii) an unusual pressure-induced quantum phase transition, and more importantly (iii) the formation of strikingly different Dirac fermion states at opposite sides of the surface. Theoretical work of Kane and Mele [1] has marked a milestone in our understanding of insulating phase of matter. In their seminal work, they showed that the electronic states of solids with bulk band gap energy could be classified according to their topological order, characterizable by quantum metrics known as topological indices. When nontrivially ordered, they predicted that such topological insulators (TI s) should exhibit gapless states at their boundaries, e.g. at their edges or surface. The succeeding theoretical and experimental works [2 6] have confirmed this prediction by discovering a number of two and three dimensional TI s, e.g., HgTe, Bi 2 Se 3, Bi 2 Te 3, Sb 2 Te 3, TlBiTe 2, and TlBiSe 2. common feature among all these materials is the presence of heavy elements with reasonably large atomic spin-orbit interaction (SOI). This is because the bulk band gap in TI s should be due to SOI [7]. Such a requirement has significantly restricted the number of TI s discovered so far. s a specific limitation, all TI s reported up to date are structurally inversion (I) symmetric and, hence, the Kramer s degeneracy is protected at each k-point inside their Brilloun zone (BZ) by the combination of the time-reversal (T) symmetry and I-symmetry. The former connects the states ψ k, and ψ k,, while the latter enforces the degeneracy between ψ k, and ψ k,. Breaking I symmetry lifts the latter constraint and, hence, lets the energy bands be 2

3 spin-split at generic k-points. Rashba spin splitting (RSS) [8] well exemplifies this situation, as described by H R = p2 +ν[e (s p)] where e is the direction of the potential gradient 2m which breaks I-symmetry, s and p are the spin and momentum operators, respectively. This interaction leads to several unique phenomena, such as the spin Hall effect [9], spin Galvanic effect [1], and magneto-electric effect [11]. Furthermore, once the superconductivity occurs in the Rashba system, unusual features such as the mixtures of the singlet and triplet pairings, large upper critical field beyond the Pauli limit [12, 13], and topological superconductors with Majorana edge channels could appear[14]. Thus, finding a noncentrosymmetric TI is expected to spark a great deal of interest as it allows us to explore the interplay of spin splitting and non-trivial topology of the electronic bands, of particular importance for realization of multifunctional TI-based systems. The purpose of this work is to propose a layered polar compound, BiTeI, as the first noncentrsymmetric TI candidate. Backed by our earlier band structure calculations [15, 16], the angle resolved photoemission spectroscopy(rpes) measurements[15, 17] have revealed thatthebulkconductionandvalencestatesinbiteiaresubjecttoagiantrssoftheorderof several hundred mev, lying among the highest reported so far. In this work we further show from first principles that by applying a reasonable pressure the material turns into a TI with many interesting features, such as a nearly double enhancement in RSS accompanied with an intriguing metallic behavior at quantum phase transition. It is also demonstrated that unlike the I-symmetric TI s, the gapless Dirac states in TI phase of BiTeI have completely different shapes at Te-ended and I-ended sides of the material. BiTeI belongs to the trigonal space group of P3m1. s shown in Figs. 1-(a) and 1- (b), the crystal structure of BiTeI has a noncentrosymmetic layered structure along its crystallographic c-axis with three atoms in one unit cell. Within each unit, a Bi atom is sandwiched between one Te and one I, forming a triple layer. Due to the strong covalency and ionicity of Bi-Te and Bi-I bonds, respectively, the bulk crystal intrinsically possesses a polar axis along the z-direction. Despite the strong chemical bonding within each triple layer, the adjacent triple layers are weakly coupled via van-der Waals interaction. From our previous calculations [16], we know that around the Fermi level E F, all the bands are essentially p-type, with conduction bands dominated by Bi-6p and valence bands composed of Te-5p and I-5p states. Moreover, due to the negative crystal field splitting (CFS) of the valence bands and positive CFS of conduction bands near E F, in the absence of SOI the 3

4 top valence bands (TVB s) and bottom conduction bands (BCB s) both become p z type (to avoid any confusion, hereafter they are referred to as p z and pb z, respectively). These features make the electronic structure of BiTeI very much similar to that of the well known TI systems Bi 2 Te 3 and Bi 2 Se 3 [3]. However, here due to the absence of I-symmetry, it s not possible to assign a distinct even or odd parity to each band. It is also worth noting that in the case of BiTeI, the minimum energy gap E G is not at the Birllouin center Γ but at the hexagonal face center, point, where k x = k y = and k z = π/c, as shown in Fig. 1-(c). The latter difference is however unimportant, as the points Γ and both obey the same symmetry operations, i.e. C 3v. Introducing SOI, both spin and orbital mixings are allowed. Consequently, p z (p B z ) transforms to p,± 1 ( 2 pb,± 1 ), thereby getting 2 energetically repelled upward (downward). This accordingly closes the band gap from 1.2 ev down to.286 ev and induces a giant bulk RSS among these two sets of bands around point (see discussion in Ref. [16]). Despite such a huge reduction in E G, BiTeI remains a trivial insulator as E G still originates from atomic orbital hybridization between Bi and its neighboring Te and I atoms. The respective band diagram is shown in Fig. 1-(d). Our strategy to turn BiTeI into a TI is to modify its chemical bonds by applying an external pressure P. s schematically shown in Figs. 1-(d), 1-(e) and 1-(f), through this modification we can effectively control both CFS and SOI such that at a critical pressure P c, p,± 1 and 2 pb,± 1 become degenerate, whereas at higher pressures their energy or- 2 dering is reversed thereby forming an inverted band gap. Controlling CFS by P is rather easy to understand, because any change in Bi-Te and Bi-I bonds leads to a change in the energy splitting of p,b z and p,b x,y states. For example, our non-relativistic band structure calculations reveal that at P c, the CFS of TVB s is so enhanced that, E G is reduced by 2 mev (see the Supplementary Fig. S1). ny band gap narrowing associated with CFS modification can be further enhanced through a subsequent enhancement of RSS of p,± 1 2 and p B,± 1, states. s described in detail in Ref. [16], this is due to the fact that these two 2 states are symmetrically of the same character and hence can very effectively couple with each other through a Rashba-type hamiltonian if they are energetically close to each other. In other words, the closer they are to each other, the larger RSS would be achieved. To elucidate this mechanism, we show in Figs. 2-(a), 2-(b) and 2-(c) the electronic band dispersions of TVB s and BCB s along the high symmetry direction H L of BiTeI as hydrostatically compressed by V/V = 1, V/V =.89 and V/V =.86, where 4

5 V corresponds to the lattice volume at ambient pressure P ambient. s shown, at P ambient (V/V = 1) a comparable giant RSS can be seen for both sets of bands with an E G of 286 mev. The corresponding Rashba energy E R, defined as the energy difference between the conduction band minimum (CBM) and the conduction band crossing point, is nearly 11 mev, in perfect agreement with that observed by RPES measurements [15]. Compressing the volume down to V/V =.89, E R monotonically increases until it reaches 2 mev, astonishingly about two times larger than that at P ambient, as shown in Fig. 2-(b) (for a detailed comparison see the Supplementary Fig. S2, also). t this point, the system reaches its quantum critical point, represented by a full band gap closing along the H directions. It is worth noting that such a quantum phase transition in BiTeI differs from that in usual centrosymmetic TI s, as there it is mediated through a band gap closing at a single high symmetry k-point, e.g. Γ point [18, 19], whereas in BiTeI as will be shown shortly due to the spin splitting the band gap is closed at 6 k-points, all along H directions and two by two paired by (T) symmetry. Thus, they are describable by Dirac Hamiltonians. Further increasing P, E R starts decreasing and an inverted band gap emerges between TVB s and BCB s. thorough analysis of these bands reveals a clear change in their atomic orbital characteristics for V/V.89 such that Bi-6p orbitals now contribute much significantly to TVB s whereas the BCB s become strongly dominated by Te-5p and I-5p states, a clear indication that the system is now in TI phase (see the Supplementary Fig. S3). t this point it is worth explaining (i) as to why quantum criticality appears only at a certain P c but not for example for a range of pressures as discussed before [2, 21] and (ii) why it is associated with a gapless state along a specific direction. Grouptheory is the key to answer these questions. s already mentioned, BiTeI belongs to C 3v symmetry consisting of a three-fold rotationc 3 along z-direction and three mirror operations M: y y where y is along H directions. For spin 1/2 electrons, C 3 and M can be represented as e iσzπ/3 and iσ y, respectively, where σ x,y,z are Pauli matrices for spin degrees of freedom. dditionally T operator can be defined as iσ y K, where K is complex conjugation. We can then construct a two band Hamiltonian H c (k) for the BCB s invariant under C 3, M and T. Up to cubic terms of k it turns out to be: H c (k) = k2 x+ky 2 + (kz π/c)2 +ν 2m 2m k,c (k x σ y k y σ x )+λ c (3kx k 2 y)k 2 y σ z, where,c,c m,c and m,c are the in-plane and out-of-plane effective masses of BCB s and ν k,c = ν c (1+ α c k 2 ). Note that in a similar manner, one can construct H v (k) for TVB s. The third term in H c (k) is obviously the Rashba term allowing a cylindrical spin splitting within k x,y plane. 5

6 The fourthterm, hereafter referred to as H w (k), acts as a warping term, trigonally distorting the energy bands. Due to H w (k), near CBM [and similarly near valance band maximum (VBM) ], the outer and inner branches of the Rashba-split conduction (and valence) bands first merge together at k-points along L directions and then form six energy pockets evenly centered along each of three H directions [see Fig. 2-(e))]. Exactly at CBM (and VBM), these six pockets reduce to six points. This accordingly explains why band touching between TVB s and BCB s occurs along H directions at P c. The effect of pressure is to enhance λ for P P c such that at the band touching point one can clearly see a rather large gap as large as 4 mev along L directions where H w contribution is zero. Such a warping effect and its enhancement at quantum critical point can be well understood by comparing Figs. 2-(d), 2(e) and 2-(f), where the isocontours of energy for an arbitrary E F fixed at 2 mev above the CBM are shown at different pressures. s can be seen, at P c the inner and outer branches of Rashba-split conduction bands are just about to form the six energy pockets, whereas away from P c they form two distinct rings among which the outer one appears to be more significantly distorted by trigonal warping (For further comparison, see supplementary Fig. S4, also). Let us now address the first question, that is, why the gapless state in BiTeI can be realized only at a certain P c but not for a range of pressures. Generally, the topological phase transition in time-reversal invariant noncentrosymmetric systems can be described by using a two band Hamiltonian H 2 2 (k,p) = 3 i= f i(k,p)τ i where τ 1,2,3 are the Pauli matrices and τ is the unit matrix. The real functions f,1,2,3 depend on the three momenta k = (k x,k y,k z ) and pressure P. The topological phase transition through an accidental band touching occurs if and only if the three conditions of f 1,2,3 (k,p) = are satisfied simultaneously in the (k, P) space. ccording to the recent work by Murakami [2, 21], the band touching points, in general, form a curve in the (k, P) space because the three conditions f 1,2,3 (k,p) = cannot uniquely specify the four parameters (k, P). Therefore if the system is free of additional constraints other than the time-reversal symmetry, a gapless metallic phase is expected to appear in a finite range of P (P c1,p c2 ) between the two critical pressures P c1 and P c2. The occurrence of the single critical pressure P c in BiTeI is traced back to the fact that the band touching occurs along a particular direction in Brillouin zone on which the Hamiltonian has an additional symmetry constraint. long the H line, e.g., (k x,k z ) = (,π/c), the system is invariant under the combined operation Ω TM 6

7 of the T and M symmetries. For T = iσ y K and M = iσ y, Ω is given by K, which imposes the following reality conditions: ΩH 2 2 (k y,p)ω 1 = H2 2 (k y,p) = H 2 2 (k y,p). Because of this reality condition, f 2 (k y,p) = at all points along the H direction. Therefore the band touching can be achieved when the two conditions f 1,3 (k y,p) = are satisfied in the (k y,p) space. Since the number of conditions to be satisfied is the same as the number of parameters, a gapless phase appears only at a single critical point (k y,c,p c ). Having demonstrated the process of topological phase transition in bulk BiTeI, we next show in Fig. 3 the band structures corresponding to I- and Te-terminated sides of BiTeI. While the surface states are fully gaped at P ambient, a gapless state appears for the both sides atp c. thigherpressures, asshownforthecaseofv/v =.86,gaplesssurfacestatesappear within the bulk band gap. clear indication that BiTeI has now become a TI. Interestingly, theshapeofthediracsurfacestatesatthete-endedsideofbiteicompletely differfromthat at the I-ended one. While for the former the Dirac point is deeply buried inside the energy valley formed by the Rashba-split TVB s (resembling the Dirac surface states in Bi 2 Te 3 ), on the other side the Dirac point is energetically well above the bulk CBM. We expect this to be a characteristic feature for all noncentrosymmetric TI candidates making them distinguishable from I-symmetric TI systems. s a consequence, in a noncentrosymmetric TI, the electrons are fractionalized into nonequivalent halves on top and bottom surfaces. This would lead to some novel features and new spintronics functions. s shown in Fig. 3-(g) and 3-(h), the surface Dirac fermion has the similar spin polarization pattern at the top and bottom surfaces in sharp contrast to the centrosymmetric TI. The Dirac point traverses across the bulk band gap on going from the top to the bottom surfaces, and always crosses E F on the side surface as long as E F is within the bulk gap. Therefore, if one applies a magnetic field or dopes magnetic impurities, an insulating stripe is expected to appear on the side surface where E F lies within the gap of the surface Dirac fermion. lso the giant spin Galvanic effect is expected since the current-spin relation on top and bottom surfaces is the same. When the hybridization between the Dirac fermions at top and bottom surfaces occurs, the gap opens along the one-dimensional (nearly) circle in momentum space and the diverging density of states results. This leads to the enhanced electron correlation effect and consequent excitonic instability. These are just a few examples of the novel phenomena expected in the noncentrosymmetric TI. Finally let us briefly discuss on the extent of pressures required for topological phase 7

8 transition. Performing two sets of volume optimization calculations using the local density approximation (LD) and generalized gradient approximation (GG) and then fitting the respective free energies to the Murnaghan equation of state [22], we estimate the upper and lower limits ofbulkmodulus B ofbiteitobe 21.9GPaand 8.9GPa. Therespective LD and GG values of bulk modulus pressure derivative B are similarly found to be 7.7 and 7.8 (see methods for details). s mentioned above, our calculations indicate that at P c, [ V is compressed by 11%. Using the Murnaghan equation of state P(V) = B (V ) B 1], B V P c is expected to be in the range of 1.7 GPa to 4.1 GPa. Considering the fact that this range of pressure is rather easily affordable in laboratory, we hope this work could interest experimentalists in this field to realize and probe such an intriguing topological insulating phase in BiTeI. In conclusion, using the first-principles calculations we showed that BiTeI could turn into TI phase under a reasonable pressure. Therefore it was proposed as the first noncentrosymmetic TI candidate having many unique features, including an enhanced bulk Rashba splitting accompanied with strikingly different topological surface states on the bottom and top sides of the surface. cknowledgment This research is granted by the Japan Society for the Promotion of Science (JSPS) through the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program), initiated by the council for Science and Technology Policy (CSTP). 8

9 Methods To simulate the effect of pressure, we optimized the structure of BiTeI crystal at various volumes ranging from V/V = 1 to V/V =.84, where V denotes the volume of BiTeI unitcell at ambient pressure (a = Å and c = Å). For a given volume, both the atomic positions and crystal s shape were allowed to be fully optimized until the magnitude of force on all ions became less than.5 ev/å. ll the structural optimization calculations were performed using both the LD and GG-PBE functionals as implemented in the VSP program [23, 24]. The corresponding Brillouin zone was sampled by a k-mesh. The respective upper and lower limits of Bulk modulus B was estimated by fitting the LD and GG-PBE free energies E(V) to the Murnaghan equation of state [22] [ ] E(V) = E + B V (V /V) B +1 B V, where B B 1 B 1 B is the bulk modulus pressure derivative (see supplementary Fig. S5). To relate the volume changes to pressure, we then used the [ equationp(v) = B (V ) B 1]. Within the same level of GG-PBE theory, the electronic B V structures of the optimized structures were calculated using the augmented plane wave plus atomic orbitals (PW-LO) method as implemented in WIEN2K program [25]. For this calculations, the muffin tin radii were set to R MT = 2.5 bohr for all the atoms and the maximum modulus of the reciprocal vectors K max was chosen such that R MT K max = 7.. To calculate the surface band structure, at each pressure a tight binding supercell Hamiltonian was constructed by downfolding the PW-LO Hamiltonian into an effective low-energy model using Maximally localized Wannier functions [26 28]. [1] Kane, C. L. & Mele E. J., Z 2 Topological Order and the Quantum Spin Hall Effect. Phys. Rev. Lett. 95, (25). [2] König, M. et al., Quantum Spin Hall Insulator State in HgTe Quantum Wells. Science 318, (27). [3] Zhang, H.et al., Topological insulators in Bi 2 Se 3, Bi 2 Te 3 and Sb 2 Te 3 with a single Dirac cone on the surface. Nature Phys. 5, (29). [4] Xia, Y. et al., Observation of a large-gap topological-insulator class with a single Dirac cone on the surface. Nature Phys. 5, (29). [5] Chen, Y. L., Single Dirac Cone Topological Surface State and Unusual Thermoelectric Prop- 9

10 erty of Compounds from a New Topological Insulator Family. Phys. Rev. Lett. 15, (21). [6] Liu, C. et al., Model Hamiltonian for topological insulators. Phys. Rev. B 82, (21). [7] Fu, L. C.& Kane, L., Topological insulators with inversion symmetry. Phys. Rev. B 76, 4532 (27). [8] Rashba, E. I., Properties of semiconductors with an extreme loop, 1. Cyclotron and combinational resonance in a magnetic field perpendicular to the plane of the loop. Sov. Phys. Slid State 2, (196). [9] Sinova, J. et al., Universal Intrinsic Spin Hall Effect. Phys. Rev. Lett. 92, (24). [1] Ganichev, S. D. et al., Spin-galvanic effect. Nature 417, (22). [11] Chalaev, O. & Loss, D., Spin-Hall conductivity due to Rashba spin-orbit interaction in disordered systems. Phys. Rev. B 71, (25). [12] Bauer, E. et al., Heavy Fermion Superconductivity and Magnetic Order in Noncentrosymmetric CePt 3 Si. Phys. Rev. Lett. 92, 273 (24). [13] Frigeri, P.. et al., Superconductivity without Inversion Symmetry: MnSi versus CePt3Si. Phys. Rev. Lett. 92, 971 (24). [14] Tanaka, Y., Yokoyama, T., Balatsky,. V. & Nagaosa, N., Theory of topological spin current in noncentrosymmetric superconductors. Phys. Rev. B 79, 655 (29). [15] Ishizaka, K. et al., Giant Rashba-type spin splitting in bulk BiTeI. Nature Mater. 1, (211). [16] Bahramy, M. S., rita, R. & Nagaosa, N., Origin of giant bulk Rashba splitting: pplication to BiTeI. Phys. Rev. B 84, 4122(R) (211). [17] Wray L.. et al., Electron dynamics in topological insulator based semiconductormetal interfaces (topological p-n interface based on Bi 2 Se 3 class). preprint at < (211). [18] Xu, S. et al., Topological Phase Transition and Texture Inversion in a Tunable Topological Insulator. Science 332, (211). [19] Sato, T. et al., Unexpected mass acquisition of Dirac fermions at the quantum phase transition of a topological insulator. Nature Phys. doi:1.138/nphys258 [2] Murakami, S., Phase transition between the quantum spin Hall and insulator phases in 3D: emergence of a topological gapless phase. New J. Phys. 9, 356 (27). 1

11 [21] Murakami, S. & Kuga, S., Universal phase diagrams for the quantum spin Hall systems. Phys. Rev. B 78, (28). [22] Murnaghan, F. D., The Compressibility of Media under Extreme Pressures. Proc. Natl. cad. Sci. US 3, (1944). [23] Kresse, G. & Furthmller, J., fficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, (1996). [24] Kresse, G. et al., Vienna b initio Software Packages (VSP); available at, [25] Blaha, P. et al., WIEN2K package; available at, [26] Souza, I., et al., Maximally localized Wannier functions for entangled energy bands. Phys. Rev. B 65, 3519 (21). [27] Mostofi,.., Yates, J. R., Lee, Y-S., Vanderbilt, D. & Marzari, N. Wannier9: tool for obtaining maximally localized Wannier functions. Comp. Phys. Commun. 178, (28). [28] Kuneš, J. et al., WIEN2WNNIER: From linearized augmented plane waves to maximally localized Wannier functions. Comp. Phys. Commun. 181, (21). 11

12 Figure captions Fig. 1: Crystal structure, Brillouin zone and schematic diagram of band splitting. (a) Crystal structure of BiTeI. triple layer with Te-Bi-I is indicated by the purple square. (b) The relative in-plane positions of Bi, Te and I as seen along the z axis. (c) The corresponding Brillouin zone. The pressure-induced evolution of BiTeI from a trivial insulator to a topological insulator is schematically drawn in (d-f). s shown in (d) below the critical pressure P c, the bulk band gap E G is trivial due to the chemical bonding. t P c, as depicted in (e) a gapless state is realized. Eventually, for pressures beyond P c, the band diagram in (f) shows a band inversion around E F, characterizing topological insulating phase in BiTeI. Here ±1/2 and ±3/2 indicate the z-component of the total angular momentum. Fig. 2: Effect of pressure on electronic dispersions of valence and conduction band. Electronic dispersions of Rashba-split bottom conduction bands (BCB s) and top valence bands (TVB s) in BiTeI as hydrostatically compressed by (a) V/V = 1, (b) V/V =.89 and (c) V/V =.86. Corresponding energy spectra of BCB s mapped into the plane (k x,k y,k z = π/c) of BiTeI at, V/V = 1, V/V =.89 and V/V =.86 are shown in (d), (e) and (f), respectively. Note that the upper limit of energy (indicated in red color) is chosen such that it corresponds to the Rashba energy E R of BCB s. The dashed lines indicate the isocontours of energy for an E w fixed at 2 mev above the corresponding CBM of each case. rrows denote the spin directions. Fig. 3: Surface states. Electronic band dispersions near the Fermi level as obtained for the I-terminated side (top panels) and Te-terminated side (bottom panels) of BiTeI, hydrostatically compressed by (a-b) V/V = 1, (c-d) V/V =.89 and (e-f) V/V =.86. The Fermi surfaces corresponding to (e) and (f) are shown in (g) and (h), respectively. s depicted schematically in the insets, for an arbitrary E F located at the middle of bulk gap, the Fermi surface at I-terminated side has a quite different shape from that of Te-terminated side, but interestingly for both sides, similar spin textures are seen. 12

13 Figure 1. y (a) (b) Bi Te I I X Bi (c) Te z x y (d) p B,± 3 2 (e) (f) B=Bi px,y B px,y,z B pz B p B,± 1 2 p B,± 1 2 p B px,y,z B x,y pz B p B,± 3 2 p B,± 1 2 p B,± 1 2 k z L Γ M k x px,y B px,y,z B H K k y p B,± 3 2 p B,± 1 2 p B z p,± 1 2 =Te,I p x,y,z pz px,y p,± 1 2 p,± 3 2 p x,y,z pz px,y p,± 1 2 p,± 3 2 p x,y,z pz px,y p B,± 1 2 p,± 3 2 p,± 1 2 p,± 1 2 p,± 1 2 P <P c P=P c P >P c Fig. 1: Crystal structure, Brillouin zone and schematic diagram of band splitting. (a) Crystal structure of BiTeI. triple layer with Te-Bi-I is indicated by the purple square. (b) The relative in-plane positions of Bi, Te and I as seen along the z axis. (c) The corresponding Brillouin zone. The pressure-induced evolution of BiTeI from a trivial insulator to a topological insulator is schematically drawn in (d-f). s shown in (d) below the critical pressure P c, the bulk band gap E G is trivial due to the chemical bonding. t P c, as depicted in (e) a gapless state is realized. Eventually, for pressures beyond P c, the band diagram in (f) shows a band inversion around E F, characterizing topological insulating phase in BiTeI. Here ±1/2 and ±3/2 indicate the z-component of the total angular momentum. 13

14 Figure 2..4 H L H L H L (a) (b) (c) E w E R k (Å 1 ) 11 _ L L.1 H.1.1 k (Å 1 ) 2 _.1 H L L (d) (e) (f).1.1 k (Å 1 ) 14 _.1 H L L ky (Å -1 ) ky (Å -1 ) ky (Å -1 ) -.5 _ -.1 H k x (Å -1 ) -.5 _ -.1 H k x (Å -1 ) -.5 _ -.1 H k x (Å -1 ) Fig. 2: Effect of pressure on electronic dispersions of valence and conduction band. Electronic dispersions of Rashba-split bottom conduction bands (BCB s) and top valence bands (TVB s) in BiTeI as hydrostatically compressed by (a) V/V = 1, (b) V/V =.89 and (c) V/V =.86. Corresponding energy spectra of BCB s mapped into the plane (k x,k y,k z = π/c) of BiTeI at, V/V = 1, V/V =.89 and V/V =.86 are shown in (d), (e) and (f), respectively. Note that the upper limit of energy (indicated in red color) is chosen such that it corresponds to the Rashba energy E R of BCB s. The dashed lines indicate the isocontours of energy for an E w fixed at 2 mev above the corresponding CBM of each case. rrows denote the spin directions. 14

15 Figure 3. M Γ M M Γ M M Γ M (a).2.2 (c).2.2 (e).2 E k y (Å 1 ) F.5 k x (Å 1 ) (g) k (Å 1 ).1.1 k (Å 1 ).1.1 k (Å 1 ) (b) (d) (f) E F k y (Å 1 ).5 k x (Å 1 ) k (Å 1 ) k (Å 1 ) k (Å 1 ) (h) -.5 Fig. 3: Surface states. Electronic band dispersions near the Fermi level as obtained for the I-terminated side (top panels) and Te-terminated side (bottom panels) of BiTeI, hydrostatically compressed by (a-b) V/V = 1, (c-d) V/V =.89 and (e-f) V/V =.86. The Fermi surfaces corresponding to (e) and (f) are shown in (g) and (h), respectively. s depicted schematically in the insets, for an arbitrary E F located at the middle of bulk gap, the Fermi surface at I-terminated side has a quite different shape from that of Te-terminated side, but interestingly for both sides, similar spin textures are seen. 15