早稲田大学先進理工学部応用物理学科長谷川剛研究室 大学院先進理工学研究科物理及応用物理学専攻 大学院先進理工学研究科ナノ理工学専攻

Transcription

1 早稲田大学先進理工学部応用物理学科長谷川剛研究室 大学院先進理工学研究科物理及応用物理学専攻 大学院先進理工学研究科ナノ理工学専攻 2016 [1] Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems, A. Wedig, M. Luebben, D-Y. Cho, M. Moors, K. Skaja, V. Rana, T. Hasegawa, K. Adepalli, B. Yildiz, R. Waser and I. Valov, Nature Nanotechnology, 11, (2016). [2] Decision Maker based on Atomic Switches, S-J. Kim, T. Tsuruoka, T. Hasegawa, Masashi Aono, K. Terabe and Masakazu Aono, AIMS Materials, in press [1] Dynamic moderation of an electric field using a SiO2 tunneling layer in TaOx-based ReRAM', Q. Wang, Y. Itoh, T. Tsuruoka, S. Ohtsuka, T. Shimizu, S. Shingubara, T. Hasegawa, and M. Aono - Physica Status Solidi Rapid Research Letters, 9, (2015). [2] Position detection and observation of a conducting filament hidden under a top electrode in a Ta2O5-based atomic switch', A. Nayak, Q. Wang, Y. Itoh, T. Tsuruoka, T. Hasegawa, L. Boodhoo, H. Mizuta, and M. Aono, Nanotechnology, 26, (2015). [3] Effects of temperature and ambient pressure on the resistive switching behavior of a polymer-based atomic switch, S. R. Mohapatra, T. Tsuruoka, Karthik Krishnan, T. Hasegawa, and M. Aono, Journal of Materials Chemistry C, 3, 5715 (2015). [4] Redox reactions at Cu, Ag/Ta 2O 5 interfaces and the effects of Ta 2O 5 film density on the forming process in atomic switch structures', T. Tsuruoka, I. Valov, S. Tappertzhofen, J. van de Hurk, T. Hasegawa, R. Waser, and M. Aono, Advanced Functional Materials, 25, (2015). [5] Ultra-low voltage and ultra-low power consumption nonvolatile operation of three-terminal atomic switch, Q. Wang, Y. Itoh, T. Tsuruoka, M. Aono and T. Hasegawa, Advanced Materials, 27, (2015). [6] Observation of a Ag protrusion on a Ag 2S island using a scanning tunneling microscope, T. Ohno and T. Hasegawa, Results in Physics, 5 (2015) [7] 長谷川剛, 原子一個を動かす アトムトランジスタ とは?, 身のまわりの表面科学 (BLUE BACKS), 日本表面科学会編, 講談社, 第 6 章, pp [1] Two types of on-state observed in the operation of a redox-based three-terminal device, Q. Wang, Y. Itoh, T. Tsuruoka, T. Hasegawa, S. Watanabe, S. Yamaguchi, T. Hiramoto and M. Aono, Key Engineering Materials, 596, (2014). 1

2 [2] Influence of Atmosphere on Photo-Assisted Atomic Switch Operations, T. Hino, T. Hasegawa, H. Tanaka, T. Tsuruoka, T. Ogawa and M. Aono, Key Engineering Materials, 596, (2014) [1] Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta 2O 5 atomic switch, T. Tsuruoka, T. Hasegawa, I. Valov, R. Waser, and M. Aono, AIP Advances, 3(3), (2013). [2] Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta 2O 5-x/Pt, Pt structure, Q. Wang, Y. Itoh, T. Hasegawa, T. Tsuruoka, S. Yamaguchi, S. Watanabe, T. Hiramoto, and M. Aono, Applied Physiscs Letters, 102(23), (2013). [3] Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories, S. Tappertzhofen, I. Valov, T. Tsuruoka, T. Hasegawa, R. Waser, and M. Aono, ACS Nano, 7(7), (2013). [4] Volatile and nonvolatile selective switching of a photo-assisted initialized atomic switch, T. Hino, T. Hasegawa, H. Tanaka, T. Tsuruoka, K. Terabe, T Ogawa, and M Aono, Nanotecnology, 24(38), (2013). [5] Synaptic plasticity and memory functions achieved in WO3-x-based nanoionics device by using principle of atomic switch operation, R. Yang, K. Terabe, Y. Yao, T. Tsuruoka, T. Hasegawa, J. Gimzewski, and M. Aono, Nanotechnology, 24(38), (2013) [1] Effects of moisture on the switching characteristics of oxide-based, gapless-type atomic switches, T. Tsuruoka, K. Terabe, T. Hasegawa, I. Valov, R. Waser and M. Aono, Advanced Functional Materials, 22(1), (2012). [2] Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers, T. Hasegawa, K. Terabe, T. Tsuruoka and M. Aono, Advanced Materials, 24(2), (2012). [3] Development and Application of Multiple-probe Scanning Probe Microscopes, T. Nakayama, O. Kubo, Y. Shingaya, S. Higuchi, T. Hasegawa, C-S Jiang, T. Okuda, Y. Kuwahara, K. Takami and M. Aono, Advanced Materials, 24(13), (2012). [4] Flexible resistive switching memory using inkjet printing of a solid polymer, S. R. Mohapatra, T. Tsuruoka, T. Hasegawa, K. Terabe and M. Aono, AIP Advances, 2(2), (2012). [5] Electronic state formation by surface atom removal on a MoS 2 surface, N. Kodama, T. Hasegawa, T. Tsuruoka, C. Joachim and M. Aono, Japanese Journal of Applied Physics, 51(6), 06FF (2012). [6] Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces, I. Valov, I. Sapezanskaia, A. Nayak, T. Tsuruoka, T. Bredow, T. Hasegawa, G. Staikov, M. Aono and R. Waser, Nature Materials, 11, (2012). 2

3 [7] Oxygen migration process in the interfaces during bipolar resistance switching behavior of WO 3-x-based nanoionics devices, R. Yang, K. Terabe, T. Tsuruoka, T. Hasegawa and M. Aono, Applied Physiscs Letters, 100(23), (2012). [8] Controlling the synaptic plasticity of a Cu 2S gap-type atomic switch, A. Nayak, T. Ohno, T. Tsuruoka, K. Terabe, T. Hasegawa, J. K. Gimzewski, and M. Aono, Advanced Functional Materials, 22(17), (2012). [9] Conductance quantization and synaptic behavior in a Ta 2O 5-based atomic switch, T. Tsuruoka, T. Hasegawa, K. Terabe and M. Aono, Nanotecnology, 23(43), (2012). [10] On-Demand Nanodevice with Electrical and Neuromorphic Multifunction Realized by Local Ion Migration, R. Yang, K. Terabe, G. Liu, T. Tsuruoka, T. Hasegawa, J. K. Gimzewski, and M. Aono, ACS Nano, 6(11), (2012). [11] 長谷川剛, 伊藤弥生美, アトムトランジスタ, 応用物理, 81(1), 55-58, (2012). [12] 寺部一弥, 長谷川剛, 鶴岡徹, 青野正和, 局所的なイオン移動を利用したナノイオニクスデバイス 原子スイッチ, 電子情報通信学会誌, 95(4), , (2012) [1] A polymer-electrolyte-based atomic switch, S. Wu, T. Tsuruoka, K. Terabe, T. Hasegawa, J. P. Hill, K. Ariga and M. Aono, Advanced Functional Materials, 21(1), (2011). [2] Volatile/Nonvolatile Dual-Functional Atom Transistor, T. Hasegawa, Y. Itoh, H. Tanaka, T. Hino, T. Tsuruoka, K. Terabe, H. Miyazaki, K. Tsukagoshi, T. Ogawa, S. Yamaguchi and M. Aono, Applied Physics Express, 4(1), (2011). [3] Memristive operations demonstrated by gap-type atomic switches, T. Hasegawa, N. Alpana, T. Ohno, K. Terabe, T. Tsuruoka, J.K. Gimzewski and M. Aono, Applied Physics A, 102(4), (2011). [4] Three-terminal nanometer metal switches utilizing solid electrolytes, H. Kawaura, T. Sakamoto, N. Bannno, S. Kaeriyama, M. Mizuno, K. Terabe, T. Hasegawa and M. Aono, Electronics and Communications in Japan, 94(4), (2011). [5] Temperature effects on the switching kinetics of a Cu-Ta 2O 5-based atomic switch, T. Tsuruoka, K. Terabe, T. Hasegawa and M. Aono, Nanotechnology, 22(25), (2011). [6] Atomic switches: atomic-movement-controlled nanodevices for new types of computing, T. Hino, T. Hasegawa, K. Terabe, T. Tsuruoka, A. Nayak, T. Ohno and M. Aono, Science and Technology of Advanced Materials, 12(1), (2011). [7] Chemical Wiring and Soldering Toward All-Molecule Electronic Circuitry, Y. Okawa, S. Mandal, C. Hu, Y. Tateyama, S. Goedecker, S. Tsukamoto, T. Hasegawa, J. K. Gimzewski, and M. Aono, Journal of the American Chemistry Society, 133(21), (2011). 3

4 [8] Switching kinetics of a Cu 2S-based gap-type atomic switch, A. Nayak, T. Tsuruoka, K. Terabe, T. Hasegawa and M. Aono, Nanotechnology, 22(23), (2011). [9] Theoretical investigation of kinetics of a Cu 2S-based gap-type atomic switch, A. Nayak, T. Tsuruoka, K. Terabe, T. Hasegawa and M. Aono, Applied Physics Letters, 98(23), (2011). [10] Short-term plasticity and long-term potentiation mimicked in single inorganic synapses, T. Ohno, T. Hasegawa, T. Tsuruoka, K. Terabe, J. K. Gimzewski and M. Aono, Nature Materials, 10(8), (2011). [11] Rate Determining Factors in the Chain Polymerization of Molecules Initiated by Local Single-Molecule Excitation, M. Swapan, Y. Okawa, T. Hasegawa and M. Aono, ACS Nano, 5(4), (2011). [12] Bulk and Surface Nucleation Processes in Ag 2S Conductance Switches, M. Morales-Masis, S.J. van der Molen, T. Hasegawa, J.M. van Ruitenbeek, Physical Review B, 84(11), (2011). [13] Sensory and short-term memory formations observed in a Ag 2S gaptype atomic switch, T. Ohno, T. Hasegawa, A. Nayak, T. Tsuruoka, J. K. Gimzewski and M. Aono, Applied Physics Letters, 99(20), (2011). [14] T. Hasegawa, K. Terabe, and M. Aono, Nanoionics switching devices, in Encyclopedia of Materilas: Science and Technology (K. H. Jürgen Buschow, Robert W. Cahn, Merton C. Flemings, Bernard Ilschner (print), Edward J. Kramer, Subhash Mahajan, and Patrick Veyssière), Elsevier, pp. 1-8, (2011). DOI: /B [15] 長谷川剛, アトムトランジスタの開発, 電気協会報, 1042, 25-27, (2011). [16] 長谷川剛, 環境 エネルギー材料ハンドブック, 材料編第 9 章 9.1 原子スイッチ材料, pp , オーム社 (2011) [1] Rate-limiting processes determining the switching time in a Ag 2S atomic switch, A. Nayak, T. Tamura, T. Tsuruoka, K. Terabe, S. Hosaka, T. Hasegawa and M. Aono, Journal of Physical Chemistry Letters, 1(3), (2010). [2] Learning abilities achieved by a single solid-state atomic switch, T. Hasegawa, T. Ohno, K. Terabe, T. Tsuruoka, T. Nakayama, J. K. Gimzewski and M. Aono, Advanced Materials, 22(16), (2010). [3] Size tunable UV luminescent silicon nanocrystals, N. Shirahata, T. Tsuruoka, T. Hasegawa and Y. Sakka, Small, 6(8), (2010). [4] Structural characterization of amorphous Ta 2O 5 and SiO 2-Ta 2O 5 used as solid electrolyte for nonvolatile switches, N. Banno, T. Sakamoto, N. Iguchi, M. Matsumoto, H. Imai, T. Ichinari, S. Fujieda, S. Watanabe, S. Yamaguchi, T. Hasegawa and M. Aono, Applied Physics Letters, 97(11), (2010). 4

5 [5] Electronic states of sulfur vacancies formed on a MoS 2 surface, N. Kodama, T. Hasegawa, Y. Okawa, T. Tsuruoka, C. Joachim and M. Aono, Japanese Journal of Applied Physics, 49(8), 08LB (2010). [6] Photo-assisted formation of atomic switch, T. Hino, H. Tanaka, T. Hasegawa, M. Aono and T. Ogawa, Small, 6(16), (2010). [7] Forming and switching mechanisms of a cation-migration-based oxide resistive memory, T. Tsuruoka, K. Terabe, T. Hasegawa and M. Aono, Nanotechnology, 21(42), , (2010). [8] Toward sub-20 nm hybrid nanofabrication by combining the molecular method and electron beam lithography, C. B. Li, T. Hasegawa, H. Tanaka, H. Miyazaki, S. Odaka, K. Tsukagoshi and M. Aono, Nanotechnology, 21(49), (4pp), (2010). [9] The Atomic Switch, M. Aono, and T. Hasegawa, Proceedings of the IEEE 98(12), (2010). [10] T. Hasegawa, K. Terabe, T. Sakamoto, and M. Aono, Nanoionics and its device applications, The Oxford Handbook of NANOSCIENCE AND TECHNOLOGY Vol.3: Applications (A. V. Narlikar & Y. Y. Fu), Oxford University Press, pp , (2010) [1] Nanoionics switching device: Atomic Switches, T. Hasegawa, K. Terabe, T. Sakamoto and M. Aono, MRS Bulletin, 34(12), (2009). [2] S. Wu, T. Tsuruoka and T. Hasegawa, Deep Ultraviolet Light-Emitting Organosoluble Polyimides Derived from Siloxane- Containing Aliphatic Dianhydride and Various Aromatic Diamines, Polymer Preprints, Japan, Vol. 58, No. 1, pp.1452 (2009). [3] S. Wu, T. Tsuruoka, K. Terabe, T. Hasegawa, J. P. Hill, K. Ariga and M. Aono, Development of Polymer Electrolytes Based Resistive Switch, Proceedings of SPIE, Vol pp , Weihai, China, 8-11 July (2009). [4] N. Banno, T. Sakamoto, H. Hada, N. Kasai, N. Iguchi, S. Fujieda, T. Ichihashi, T. Hasegawa and M. Aono, Cu-ion diffusivity in SiO 2-Ta 2O 5 solid electrolyte and its impact on the yield resistance switching after BEOL processes, 2009 IEEE Int. Reliability Phys. Symp. (IRPS), pp (2009). Montreal, QC, Canada, April [5] 長谷川剛, 寺部一弥, 阪本利司, 鶴岡徹, 青野正和, 電気化学反応を用いた金属ナノワイヤーの形成とそのデバイス応用, Journal of the Vacuum Society of Japan, 52(6), , (2009). [6] 大川祐司, 長谷川剛, 青野正和, 走査プローブ顕微鏡, 第 14 章 原子 分子操作, pp 共立出版 (2009). [7] 長谷川剛, 超分子サイエンス& テクノロジー, 第 3 章 第 2 節 12 原子スイッチ, NTS 出版 (2009). 5

6 2008 [1] Optical waveguide properties of single indium oxide nanofibers, T. Tsuruoka, Ch. Liang, K. Terabe, and T. Hasegawa, Journal of Optics A (Pure and Applied Optics), 10(5), (2008). [2] Effect of sulfurization condition on structural and electrical properties of copper sulfide films, M. Kundu, T. Hasegawa, K. Terabe, and M. Aono, Journal of Applied Physics, 103(7), (2008). [3] Atomic force microscopy and theoretical investigation of the lifted-up conformation of polydiacetylene on a graphite substrate, Y. Okawa, D. Takajo, S. Tsukamoto, T. Hasegawa, and M. Aono, Soft Matter, 4(5), (2008). [4] Resistance Switching in Anodic Oxidized Amorphous TiO 2 Films, Ch. Liang, K. Terabe, T. Hasegawa, and M. Aono, Applied Physics Express, 1(6), (2008). [5] Structural studies of copper sulfide films: Influence of ambient atmosphere, M. Kundu, T. Hasegawa, K. Terabe, K. Yamamoto, and M. Aono, Science and Technology of Advanced Materials, 9(3), (2008). [6] Diffusivity of Cu ions in solid electrolyte and its effect on the performance of nanometer-scale switch, N. Banno, T. Sakamoto, N. Iguchi, H. Sunamura, K. Terabe, T. Hasegawa and M. Aono, IEEE Transaction on Electron Devices, 55(11), (2008). [7] A solid electrolyte nanometer switch, T. Sakamoto, S. Kaeriyama, M. Mizuno, H. Kawaura, T. Hasegawa, K. Terabe and M. Aono, Electrical Engineering in Japan, 165(1), (2008). [8] 川浦久雄, 阪本利司, 伴野直樹, 帰山隼一, 水野正之, 寺部一弥, 長谷川剛, 青野正和, 固体電解質を用いた3 端子型ナノメートル金属スイッチ, 電気学会論文誌 C, 128(6), (2008). [9] 呉守明, 鶴岡徹, 長谷川剛, 葛子義, 早川晃鏡, 柿本雅明, 主鎖にシロキサン基を有する高蛍光可溶ポリイミド, Polymer Preprints, Japan, Vol. 57, No. 2, pp.4113 (2008). [10] 寺部一弥, 長田実, 長谷川剛, ナノプローブ加工技術を用いたナノイオニクス素子の開発, ナノイオニクス 最新技術とその展望, シーエムシー出版, pp (2008) [1] Chain Polymerization of Diacetylene Compound Multilayer Films on the Topmost Surface Initiated by Scanning Tunneling Microscope Tip, D. Takajo, Y. Okawa, T. Hasegawa, and M. Aono, Langmuir, 23, (2007). [2] Size-dependent single electron tunneling effect in Au nanoparticles, R. Negishi, T. Hasegawa, H. Tanaka, K. Terabe, H. Ozawa, T. Ogawa, and M. Aono, Surface Science, 601, (2007). [3] Agl/Ag Heterojunction Nanowire: Facile Electrochemical Synthesis, Photoluminescence, and Enhanced Ionic Conductivity, Ch. Liang, K. Terabe, T. Tsuruoka, M. Osada, T. Hasegawa, and M. Aono, Advanced Functional Materials, 17, (2007). 6

7 [4] I-V characteristics of single electron tunneling from symmetric and asymmetric double-barrier tunneling junctions, R. Negishi, T. Hasegawa, K. Terabe, M. Aono, H. Tanaka, T. Ogawa, and H. Ozawa, Applied Physics Letters, 90(22), (2007). [5] 'Electronic transport in Ta 2O 5 resistive switch', T. Sakamoto, K. Lister, N. Banno, T. Hasegawa, K. Terabe and M. Aono, Applied Physics Letters, 91, (2007). [6] Resistance switching of an individual Ag 2S/Ag nanowire heterostructure, Ch. Liang, K. Terabe, T. Hasegawa, and M. Aono, Nanotechnology, 18(48), (2007). [7] Control of local ion transport to create unique functional nanodevices based on ionic conductors, K. Terabe, T. Hasegawa, Ch. Liang, and M. Aono, Science and Technology of Advanced Materials, 8(6), (2007). [8] Anomalous phase transition and ionic conductivity of AgI nanowire grown using porous alumina template, Ch. Liang, K. Terabe, N. Iyi, T. Hasegawa, and M. Aono, Journal of Applied Physics, 102(12), (2007). [9] Origin of green emission from ZnS nanobelts as revealed by scanning near-field optical microscopy, T. Tsuruoka, Ch. Liang, K. Terabe, and T. Hasegawa, Applied Physics Letters, 92(9), (2007). [10] Material dependence of switching speed of atomic switches made from silver sulfide and from copper sulfide, T. Tamura, T. Hasegawa, K. Terabe, T. Nakayama, T. Sakamoto, H. Sunamura, H. Kawaura, S. Hosaka and M. Aono, Journal of Physics: Conference Series, 61(1), (2007). [11] T. Sakamoto, N. Banno, N. Iguchi, H. Kawaura, H. Sunamura, S. Fujieda, K. Terabe, T. Hasegawa and M. Aono, A Ta 2O 5 solid-electrolyte switch with improved reliability, 2007 IEEE Symp. VLSI Tech. pp (2007). Kyoto, Japan, June. [12] 阪本利司, 帰山隼一, 水野正之, 寺部一弥, 長谷川剛, 青野正和, LSI 回路の再構成を可能とするナノブリッジ, NEC 技報, 60(1), (2007) [1] 'Switching Property of Atomic Switch Controlled by Solid Electrochemical Reaction', T. Tamura, T. Hasegawa, K. Terabe, T. Nakayama, T. Sakamoto, H. Sunamura, H. Kawaura, S. Hosaka, and M. Aono, Japanese Journal of Applied Physics, 45(12), L364-L366 (2006). [2] 'Effect of ion diffusion on switching voltage of solid-electrolyte nanometer switch', N. Banno, T. Sakamoto, T. Hasegawa, K. Terabe, and M. Aono, Japanese Journal of Applied Physics, 45(4B), (2006). [3] 'Effect of sulfurization conditions and post deposition annealing treatment on the structural and electrical properties of silver sulfide films', M. Kundu, K. Terabe, T. Hasegawa, and M. Aono, Journal of Applied Physics, 99, (2006). 7

8 [4] Fabrication of nanoscale gaps using a combination of self-assemble molecular and electron beam lithographic techniques, R. Negishi, T. Hasegawa, K. Terabe, M. Aono, T. Ebihara, H. Tanaka, T. Ogawa, Applied Physics Letters, 88, (2006). [5] Formation of metastable silver nanowire of hexagonal structure and their structure transformation under electron beam irradiation, Ch. Liang, K. Terabe, T. Hasegawa, and M. Aono, Japanese Journal of Applied Physics, 45(7), (2006). [6] Template synthesis of M/M 2S (M = Ag, Cu) hetero-nanowires by electrochemical technique, Ch. Liang, K. Terabe, T. Hasegawa, and M. Aono, Solid State Ionics, 177, (2006). [7] Solid-Electrolyte Nanometer Switch, N. Banno, T. Sakamoto, N. Iguchi, H. Kawaura, S. Kaeriyama, M. Mizuno, K. Terabe, T. Hasegawa, and M. Aono, IEICE Transactions on Electronics, E89-C, 11, (2006). [8] 阪本利司, 帰山隼一, 長谷川剛, 寺部一弥, 固体メモリー, 応用物理, 75(9), (2006). [9] 寺部一弥, 長谷川剛, 中山知信, 青野正和, 原子スイッチ 原子 ( イオン ) の移動を利用したナノデバイス, 表面科学, 27(4), (2006). [10] 阪本利司, 伴野直樹, 井口憲幸, 帰山隼一, 水野正之, 川浦久雄, 寺部一弥, 長谷川剛, 青野正和, 3 端子固体電解質ナノスイッチ, 電子情報通信学会技術研究報告, 105, (2006). [11] 阪本利司, 帰山隼一, 砂村潤, 水野正之, 川浦久雄, 長谷川剛, 寺部一弥, 青野正和, 固体電解質ナノスイッチ, 電気学会論文誌 C, 次世代 LSI デバイス プロセス技術の課題と展望 特集, 126, (2006) [1] Quantized conductance atomic switch, K. Terabe, T. Hasegawa, T. Nakayama and M. Aono, Nature, 433, (2005). [2] A nonvolatile programmable solid-electrolyte nanometer switch, S. Kaeriyama, T. Sakamoto, H. Sunamura, M. Mizuno, H. Kawaura, T. Hasegawa, K. Terabe, T. Nakayama and M. Aono, IEEE J. Solid-State Circuits, 40(1), (2005). [3] 'Ionic-Electronic Conductor Nanostructures: Template-Confined Growth and Nonlinear Electrical Transport', Ch. Liang, K. Terabe, T. Hasegawa, R. Negishi, T. Tamura, and M. Aono, Small, 10, (2005). [4] T. Sakamoto, N. Banno, N. Iguchi, H. Kawaura, S. Kaeriyama, M. Mizuno, K. Terabe, T. Hasegawa, and M. Aono, Three Terminal Solid-Electrolyte Nanometer Switch, Technical Digest of 2005 International Electron Device Meeting, Washington, 2005, pp [5] 長谷川剛, 青野正和, 固体電気化学反応を利用した実用デバイス 原子スイッチ の開発, 化学と工業, 58(11), (2005). [6] 寺部一弥, 長谷川剛, 中山知信, 青野正和, 量子化伝導原子スイッチの開発, まてりあ, 44(9), (2005). 8

9 [7] 長谷川剛, 寺部一弥, 中山知信, 青野正和, 究極的なナノデバイス 原子スイッチ の開発, 未来材料, 5(6), (2005). [8] 長谷川剛, 寺部一弥, 中山知信, 坂本利司, 青野正和, 原子スイッチを用いた実用的論理演算回路の構築, OHM, 92(12), pp (2005) [1] T. Sakamoto, S. Kaeriyama, H. Sunamura, M. Mizuno, H. Kawaura, T. Hasegawa, K. Terabe, T. Nakayama and M. Aono, A Nonvolatile Programmable Solid Electrolyte Nanometer Switch, 2004 IEEE International Solid-State Circuits Conference Digest of Technical Papers (47), San Francisco, 2004, pp [2] 川浦久雄, 阪本利司, 砂村潤, 帰山隼一, 水野正之, 長谷川剛, 中山知信, 寺部一弥, 青野正和, 高性能 LSI の機能切り替えを可能にするスイッチ素子, 工業材料, 52(7), (2004). [3] 阪本利司, 帰山隼一, 砂村潤, 水野正之, 川浦久雄, 長谷川剛, 中山知信, 寺部一弥, 青野正和, 固体電解質を用いたナノスイッチ, 電子情報通信学会技術研究報告, 104, (2004) [1] Nanometer-scale switches using copper sulfide, T. Sakamoto, H. Sunamura, H. Kawaura, T. Hasegawa, T. Nakayama and M. Aono, Applied Physics Letters, 82, (2003). [2] 塚本茂, 長谷川剛, 点接触導電体, ナノテクノロジー大辞典, pp.67-74, 工業調査会 (2003). [3] 長谷川剛, 原子スイッチ, ナノテクノロジー大辞典, pp , 工業調査会 (2003). [4] 長谷川剛, 原子スイッチ, ナノテクノロジーハンドブック, pp , オーム社 (2003) [1] Formation and Disappearance of a Nanoscale Silver Cluster Realized by Solid Electrochemical Reaction, K. Terabe, T. Nakayama, T. Hasegawa and M. Aono, Journal of Applied Physics, 91, (2002). [2] Ionic/Electronic Mixed Conductor Tip of a Scanning Tunneling Microscope as a Metal Atom Source for Nanostructuring, K. Terabe, T. Nakayama, T. Hasegawa and M. Aono, Applied Physics Letters, 80, (2002). [3] Far-Field and Near-Field Optical Readings of under-50 nm-sized pits, S. Hosaka, T. Shintani, H. Koyanagi, K. Katoh, T. Nishida, T. Saiki and T. Hasegawa, Japanese Journal of Applied Physics, 41, L884-L886 (2002). [4] T. Hasegawa, K. Terabe, T. Nakayama, T. Sakamoto, H. Sunamura, H. Kawaura and M. Aono, Quantum point contact for nano-devices controlled by solid electrochemical reaction, Proc. XVth Int. Cong. on Electron Microscopy, Durban, 2002, pp

10 [5] 青野正和, 寺部一弥, 長谷川剛, 中山知信, 原子スイッチ, ナノテクノロジー最前線 ( 塚田捷, 河 津璋 ), pp , 東京教育情報センター (2002) [1] Quantum point contact switch realized by solid electrochemical reaction, K. Terabe, T. Hasegawa, T. Nakayama and M. Aono, Riken Review, 37, 7-8 (2001). [2] T. Hasegawa, K. Terabe, T. Nakayama and M. Aono, Quantum Point Contact switch using Solid Electrochemical reaction, Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials, Tokyo, 2001, pp [3] 青野正和, 中山知信, 長谷川剛, 田中啓文, 新ヶ谷義隆, 大川祐司, 桑原裕司, 赤井恵, 寺部一弥, ナノワイヤーの電気伝導, 学術月報, 54(10), (2001) [1] Y. Mitsui, F. Yano, Y. Nakamura, K. Kimoto, T. Hasegawa, S. Kimura and K. Asayama, Physical and Chemical Analytical Instruments for Failure Analyses in G-bit Devices, International Electron Devices Meeting Technical Digest, IEEE, 1998 pp [1] Domain growth of Si(111)-5x2Au by high-temperature STM, T. Hasegawa, S. Hosaka and S. Hosoki, Surface Science, , (1996). [2] Stable phase boundaries between the 7x7 and the 5x2Au structures on a Si(111) surface studied by high-temperature STM, T. Hasegawa, S. Hosoki and K. Yagi, Surface Science, 355, L295-L299 (1996). [3] Intrarow diffusion of Au atoms in the Si(111)-(5x2)Au structure, T. Hasegawa and S. Hosoki, Physical Review B, 54, (1996). [4] Dynamic observation of Si-island growth on a Si(111)-7x7 surface by high-temperature scanning tunneling microscopy, T. Hasegawa, W. Shimada, H. Tochihara and S. Hosoki, Journal of Crystal Growth, 166, (1996). [5] Cu film growth on a Si(111) surface studied by scanning tunneling microscopy, S. Tomimatsu, M. Kohno, T. Hasegawa and S. Hosoki, Japanese Journal of Applied Physics, 35, (1996). [6] STM modification of MoS2 in the nanometer-scale using a gas-solid reaction, M. Kohno, T. Doi, T. Hasegawa, S. Tomimatsu and S. Hosoki, Thin Solid Film, , (1996) [1] Fabrication of nanostructures using scanning probe microscopes, S. Hosaka, S. Hosoki, T. Hasegawa, H. Koyanagi, T. Shintani and M. Miyamoto, Journal of Vacuum Science and Technology B, 13, (1995). 10

11 1994 [1] Dynamic observation of silicon homoepitaxial growth by high-temperature scanning tunneling microscopy, T. Hasegawa, M. Kohno, S. Hosaka and S. Hosoki, Journal of Vacuum Science and Technology B, 12, (1994). [2] Initial stages of oxygen adsorption onto a Si(111)-7x7 surface studied by STM, T. Hasegawa, M. Kohno, S. Hosaka and S. Hosoki, Surface Science, 312, L753-L756 (1994). [3] Initial stage of oxygen adsorption onto a Si(111)-7x7 surface studied by scanning tunneling microscopy, T. Hasegawa, M. Kohno and S. Hosoki, Japanese Journal of Applied Physics, 33, (1994). [4] Just-on-surface magnetic force microscopy, S. Hosaka, A. Kikukawa, Y. Honda and T. Hasegawa, Applied Physics Letters, 65, (1994). [5] 保坂純男, 相良和彦, 山口宗明, 長谷川剛, 細木茂行, トンネル障壁イメージング(TBI) 法による poly-si 膜の不純物濃度分布観察, IONICS, 20(9), (1994). [6] 細木茂行, 長谷川剛, STS, 半導体計測評価事典 ( 高柳邦夫, 田島道夫, 松井純爾 ), pp , サイエンスフォーラム, SCIENCE FORUM (1994) [1] Dynamic observation of Si crystal growth on a Si(111) 7x7 surface by high-temperature scanning tunneling microscopy, T. Hasegawa, M. Kohno, S. Hosaka and S. Hosoki, Physical Review B, 48, (1993). [2] Ultrahigh vacuum atomic force microscope using a pantograph inchworm mechanism, S. Hosaka, Y. Honda, T. Hasegawa, T. Yamamoto and M. Kondo, Review of Scientific Instruments, 64, (1993). [3] 細木茂行, 長谷川剛, 走査型トンネル顕微鏡を用いた表面修飾, 応用物理, 62(2), (1993). [4] 細木茂行, 長谷川剛, Si(111) の付着金原子による再配列構造, 日本結晶学会誌, 35(2), (1993) [1] In Situ Observation of Gold Adsorption onto Si(111)7x7 Surface by Scanning Tunneling Microscopy, T. Hasegawa, S. Hosaka and S. Hosoki, Japanese Journal of Applied Physics, 31, L1492-L1494 (1992). [2] Surface modification of MoS 2 using STM, S. Hosoki, S. Hosaka and T. Hasegawa, Applied Surface Science, 60/61, (1992). [3] Observation of natural oxide growth on silicon facets using an atomic force microscope with current measurement, S. Hosaka, H. Koyanagi, T. Hasegawa, S. Hosoki and A. Hiraiwa, Journal of Applied Physics, 72, (1992). 11

12 1991 [1] Initial stage of Au adsorption onto a Si(111) surface studied by scanning tunneling microscopy, T. Hasegawa, K. Takata, S. Hosaka and S. Hosoki, Journal of Vacuum Science and Technology B, 9, (1991). [2] 細木茂行, 保坂純男, 長谷川剛, STM による原子操作の試み, 表面科学, 12(10), (1991) [1] Au-induced reconstructions of the Si(111) surface, T. Hasegawa, K. Takata, S. Hosaka and S. Hosoki, Journal of Vacuum Science and Technology A, 8, (1990). [2] Fast scanning tunneling microscope for dynamic observation, S. Hosaka, T. Hasegawa, S. Hosoki and K. Takata, Review of Scientific Instruments, 61, (1990). [3] Dynamic observation of Si(111) surface using a fast scanning tunneling microscope, S. Hosaka, T. Hasegawa, S. Hosoki and K. Takata, Applied Physics Letters, 57, (1990). [4] Tunneling barrier height imaging and polycrystalline Si surface observations, S. Hosaka, K. Sagara, T. Hasegawa, K. Takata and S. Hosoki, Journal of Vacuum Science and Technology A, 8, (1990). [5] 保坂純男, 相良和彦, 長谷川剛, 細木茂行, STM を用いた TBI 法による不純物濃度分布の観察, Hitachi Scientific Instrument News, 55(3), pp (1990) [1] Tunneling acoustic microscope, K. Takata, T. Hasegawa, S. Hosaka, S. Hosoki and T. Komoda, Applied Physics Letters, 55, (1989). [2] Tunneling acoustic microscope, K. Takata, J. Yugami, T. Hasegawa, S. Hosaka, S. Hosoki and T. Komoda, Japanese Journal of Applied Physics, 28, L2279-L2280 (1989). [3] 細木茂行, 保坂純男, 高田啓二, 長谷川剛, 野村節生, STM による表面欠陥の観察, 表面科学, 10(3), (1989). [4] 保坂純男, 細木茂行, 長谷川剛, 高田啓二, STM の高性能化と先端プロセスへの応用, 真空, 32(7), (1989) [1] Profile and plan-view imaging of reconstructed surface structures of gold, N. Ikarashi, K. Kobayashi, H. Koike, T. Hasegawa and K. Yagi, Ultramicroscopy, 26, (1988). [2] Epitaxy of Au and Ag on cleaved (10,0) surface of MoS 2, N. Ikarashi, K. Kobayashi, T. Hasegawa and K. Yagi, Japanese Journal of Applied Physics, 27, L750-L752 (1988). [3] 細木茂行, 保坂純男, 高田啓二, 野村節男, 長谷川剛, 走査型トンネル顕微鏡(STM) とその画像, 電子情報通信学会誌, 88-11, (1988). 12

13 1986 [1] Atomic Resolution TEM Images of the Au(001) Reconstructed Surface, T. Hasegawa, K. Kobayashi, N. Ikarashi, K. Takayanagi and K. Yagi, Japanese Journal of Applied Physics, 25, L366-L368 (1986). [2] T. Hasegawa, N. Ikarashi, K. Kobayashi, K. Takayanagi and K. Yagi, High resolution profile images of the reconstructed structures of Au(001), (110) and (111) surfaces, Proc. XIth Int. Cong. on Electron Microscopy, Kyoto, 1986, pp