DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D9 Supersedes data of November 995 File under Discrete Semiconductors, SC 996 Jun
FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed minimum turn-on time for absorbing forward current transients and oscillations Specially designed as rectifier in the auxiliary power supply in e.g. switched mode power supplies Available in ammo-pack. DESCRIPTION Cavity free cylindrical glass package through Implotec () technology. This package is hermetically sealed handbook, 4 columns k and fatigue free as coefficients of expansion of all used parts are matched. () Implotec is a trademark of Philips. Fig. Simplified outline (SOD8) and symbol. a MAM3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RRM repetitive peak reverse voltage 3 V V R continuous reverse voltage 3 V (AV) average forward current averaged over any ms period; T tp = 55 C; lead length = mm; see Fig.; see also Fig.4 averaged over any ms period; T amb = 65 C; PCB mounting (Fig.8); see Fig.3; see also Fig.4.85 A.45 A RM repetitive peak forward current T tp = 55 C 8.5 A T amb = 65 C 4.45 A SM non-repetitive peak forward current t = ms half sine wave; 5 A T j = T j max prior to surge; V R = V RRMmax T stg storage temperature 65 +75 C T j junction temperature 65 +75 C 996 Jun
ELECTRICAL CHARACTERISTICS T j = 5 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F forward voltage = A; T j = T j max ; see Fig.5.7 V I R reverse current V R = V RRMmax ; see Fig.6 = A; see Fig.5.3 V V R = V RRMmax ; T j = 65 C; see Fig.6 t fr forward recovery time when switched to = A in 5 ns; see Fig.9 t on turn-on time when switched from V F = V to V F = 3 V; measured between % and 9% of max ; see Fig. t rr reverse recovery time when switched from =.5 A to I R = A; measured at I R =.5 A; see Fig. µa µa 35 ns 5 ns 5 ns C d diode capacitance f = MHz; V R = V; see Fig.7 7 pf THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length = mm 6 K/W R th j-a thermal resistance from junction to ambient note K/W Note. Device mounted on an epoxy-glass printed-circuit board,.5 mm thick; thickness of Cu-layer 4 µm, see Fig.8. For more information please refer to the General Part of Handbook SC. 996 Jun 3
GRAPHICAL DATA.6 MLC33.8 MLC34 (AV) (AV)..6.8 lead length mm.4.4. o T tp ( C) a =.4; V R = V RRMmax ; δ =.5. Switched mode application. o T amb ( C) a =.4; V R = V RRMmax ; δ =.5. Device mounted as shown in Fig.8. Switched mode application. Fig. Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). 3 MLC3 6 MLC3 P (W) a = 3.5.57.4 4.5 I F(AV). 3 4 5 V F (V) a = (RMS) /(AV) ; V R = V RRMmax ; δ =.5. Fig.4 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Dotted line: T j = 75 C. Solid line: T j = 5 C. Fig.5 Forward current as a function of forward voltage; maximum values. 996 Jun 4
handbook, halfpage 3 MGA853 MLC35 I R ( µ A) Cd (pf) T ( o j C) V (V) 3 R V R = V RRMmax. f = MHz; T j = 5 C. Fig.6 Reverse current as a function of junction temperature; maximum values. Fig.7 Diode capacitance as a function of reverse voltage; typical values. 5 5 V F MGC5 7 5 t fr % % t 3 % MGA t Dimensions in mm. Fig.8 Device mounted on a printed-circuit board. Fig.9 Forward recovery time definition. 996 Jun 5
handbook, full pagewidth DUT 3V V F (V) 5 Ω Ω % 9% t on % MBH53 Input impedance oscilloscope: MΩ, pf; t r 7 ns. Source impedance: 5 Ω; t r ns. Fig. Test circuit and turn-on time waveform and definition. handbook, full pagewidth Ω 5 V + DUT.5 trr 5 Ω Ω.5 t.5 I R MAM57 Input impedance oscilloscope: MΩ, pf; t r 7 ns. Source impedance: 5 Ω; t r 5 ns. Fig. Test circuit and reverse recovery time waveform and definition. 996 Jun 6
PACKAGE OUTLINE handbook, full pagewidth 5 max.8 max.5 max 8 min 3.8 max 8 min MBC5 Dimensions in mm. The marking band indicates the cathode. Fig. SOD8. DEFINITIONS Data Sheet Status Objective specification Preliminary specification This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 996 Jun 7