M3D35 Rev. 2 7 February 24 Product data. Product profile. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology..2 Features Low gate charge Low on-state resistance Surface mounted package Fast switching..3 Applications Portable appliances Lithium-ion battery chargers Notebook computers DC-to-DC converters..4 Quick reference data V DS 3 V P tot 2.5 W I D 9A R DSon 8.5 mω 2. Pinning information Table : Pinning - SOT96- (SO-8), simplified outline and symbol Pin Description Simplified outline Symbol,2,3 source (s) 4 gate (g) 5,6,7,8 drain (d) 8 5 d g 4 Top view MBK87 MBB76 s SOT96- (SO8)
3. Ordering information Table 2: Ordering information Type number Package Name Description Version SO8 plastic small outline package; 8 leads SOT96-4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 634). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage (DC) 25 C T j 5 C - 3 V V GS gate-source voltage (DC) - ±2 V I D drain current T amb =25 C; pulsed; t p s; Figure 2 and 3-9 A T amb =7 C; pulsed; t p s; Figure 2-7 A I DM peak drain current T amb =25 C; pulsed; t p µs; Figure 3-4 A P tot total power dissipation T amb =25 C; pulsed; t p s; Figure - 2.5 W T amb =7 C; pulsed; t p s; Figure -.6 W T stg storage temperature 55 +5 C T j junction temperature 55 +5 C Source-drain diode I S source (diode forward) current T amb =25 C; pulsed; t p s - 2.3 A Product data Rev. 2 7 February 24 2 of 2
2 3aa 2 3aa9 P der (%) I der (%) 8 8 4 4 5 5 2 T amb ( C) 5 5 2 T amb ( C) P der P tot I D = ---------------------- % I P der = ------------------- % I tot ( 25 C ) D25C ( ) Fig. Normalized total power dissipation as a function of ambient temperature. Fig 2. Normalized continuous drain current as a function of ambient temperature. 2 3ap ID (A) Limit RDSon = VDS / ID tp = µs ms ms ms DC - s -2-2 V DS (V) Fig 3. T amb =25 C; I DM is single pulse. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. Product data Rev. 2 7 February 24 3 of 2
5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-a) thermal resistance from junction to ambient mounted on a printed-circuit board; minimum footprint; t p s; Figure 4 - - 5 K/W 5. Transient thermal impedance 2 3af83 Z th(j-amb) (K/W) δ =.5.2..5.2 - single pulse P t p δ = T t p t T -2-4 -3-2 - 2 3 t p (s) Fig 4. T amb =25 C Transient thermal impedance from junction to ambient as a function of pulse duration. Product data Rev. 2 7 February 24 4 of 2
6. Characteristics Table 5: Characteristics T j =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V GS(th) gate-source threshold voltage I D = 25 µa; V DS =V GS ; Figure 9.8 - - V I DSS drain-source leakage current V DS =24V; V GS =V T j =25 C - - µa T j =55 C - - 5 µa I GSS gate-source leakage current V GS = ±2 V; V DS = V - - na R DSon drain-source on-state resistance V GS = V; I D =9A;Figure 7 and 8-5.5 8.5 mω V GS = 4.5 V; I D =7A;Figure 7-24 33 mω I D(on) on-state drain current V DS 5 V; V GS =V 3 - - A Dynamic characteristics g fs forward transconductance V DS =5V; I D =9A - 9 - S Q g(tot) total gate charge I D = 8 A; V DD =5V; V GS =5V;Figure 3 -.8 - nc Q gs gate-source charge - 2.7 - nc Q gd gate-drain (Miller) charge - 5 - nc t d(on) turn-on delay time V DD =5V; I D =.5 A; V GS =V; R G =6Ω - 6 6 ns t r rise time - 7 5 ns t d(off) turn-off delay time - 23 3 ns t f fall time - 5 ns Source-drain diode V SD source-drain (diode forward) voltage I S = 7 A; V GS =V;Figure 2 -.86.2 V t rr reverse recovery time I S = 7 A; di S /dt = A/µs; V R =3V; V GS =V - 25 8 ns Product data Rev. 2 7 February 24 5 of 2
I D (A) 8 V 5 V 3 V 3ao99 2.8 V ID (A) 8 V DS > I D x R DSon 3aaa326 6 2.7 V 6 T j = 5 C 4 2.5 V 4 2 V GS = 2.3 V 2 25 C.2.4.6.8 V DS (V) 2 3 VGS (V) Fig 5. T j =25 C Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. T j =25 C and 5 C; V DS > I D xr DSon Transfer characteristics: drain current as a function of gate-source voltage; typical values. 8 RDSon (mω) VGS = 2.8 V 3ap a 2 3aa27 6.5 4 3 V 2 4 V 5 V V.5 2 4 6 8 ID (A) -6 6 2 8 Tj ( C) T j =25 C R a = DSon ---------------------------- R DSon ( 25 C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Product data Rev. 2 7 February 24 6 of 2
2.5 V GS(th) (V) 2 max 3aq9 - I D (A) -2 3aa36.5 typ -3 min typ max min -4.5-5 -6 6 2 8 T j ( C) -6 2 3 V GS (V) Fig 9. I D = 25 µa; V DS =V GS T j =25 C; V DS =5V Gate-source threshold voltage as a function of junction temperature. Fig. Sub-threshold drain current as a function of gate-source voltage. 4 3aaa328 C (pf) 3 C iss 2 C oss C rss - V DS (V) 2 V GS = V; f = MHz Fig. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Product data Rev. 2 7 February 24 7 of 2
8 3aaa329 5 3aaa625 IS (A) 6 V GS (V) 4 4 T j = 5 C 25 C 3 2 2.2.4.6.8 VSD (V) 5 5 Q G (nc) T j =25 C and 5 C; V GS =V I D = 8 A; V DD =5V Fig 2. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 3. Gate-source voltage as a function of gate charge; typical values. Product data Rev. 2 7 February 24 8 of 2
7. Package outline SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96- D E A X c y H E v M A Z 8 5 Q A 2 A (A ) 3 A pin index θ L p 4 L e b p w M detail X 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max..75 A A 2 A 3 b p c D () E (2) e H () E L L p Q v w y Z.25..69..4.45.25.57.49.25..49.36.9.4.25.9..75 Notes. Plastic or metal protrusions of.5 mm (.6 inch) maximum per side are not included. 2. Plastic or metal protrusions of.25 mm (. inch) maximum per side are not included. 5. 4.8.2.9 4. 3.8.6.5.27.5 6.2 5.8.244.228.5..4.7.6.25.25..39.28.4...4.6.24 θ.7.3 o 8 o.28.2 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT96-76E3 MS-2 99-2-27 3-2-8 Fig 4. SOT96- (SO8). Product data Rev. 2 7 February 24 9 of 2
8. Revision history Table 6: Revision history Rev Date CPCN Description 2 2427 - Product data (9397 75 2899) Modifications: Updated to latest standards. Section 3 Ordering information added. Section 5 Thermal characteristics clarification of thermal resistance table. Section 6 Characteristics typical R DSon value improved. Section 6 Characteristics typical Q g(tot), Q gs and Q gd values improved. Section 6 Characteristics t d(on), t r, t d(off) and t f conditions and typical values modified. Section 6 Characteristics V SD conditions, and typical value modified. Section 6 Characteristics t rr conditions and typical value modified Section 6 Characteristics Figure 5, 6, 7,, 2 and 3 modified. 273 - Product data (9397 75 842) Product data Rev. 2 7 February 24 of 2
9. Data sheet status Level Data sheet status [] Product status [2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.. Definitions. Disclaimers Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 634). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. Fax: +3 4 27 24825 9397 75 2899 Koninklijke Philips Electronics N.V. 24. All rights reserved. Product data Rev. 2 7 February 24 of 2
Contents Product profile........................... Description.............................2 Features...............................3 Applications............................4 Quick reference data..................... 2 Pinning information...................... 3 Ordering information..................... 2 4 Limiting values.......................... 2 5 Thermal characteristics................... 4 5. Transient thermal impedance.............. 4 6 Characteristics.......................... 5 7 Package outline......................... 9 8 Revision history........................ 9 Data sheet status....................... Definitions............................ Disclaimers............................ Koninklijke Philips Electronics N.V. 24. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 7 February 24 Document order number: 9397 75 2899