LIGHT BAR LED DISPLAY Pb Lead-Free Parts DATA SHEET DOC. NO : QW95- REV. : A DATE : 17 - Oct. - 25
Page 1/7 Package Dimensions LIGITEK ELECTRONICS CO.,LTD. 2.35(.81") 19±.25 6.3(.248") 5. (.197") LIGITEK Ø.5 TYP 4.2±.5 1 + PIN NO.1 12.5(.492") 2 - Note : 1.All dimension are in millimeters and (lnch) tolerance is ±.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
Page 2/7 Internal Circuit Diagram 2 1 Electrical Connection PIN NO.1 1 2 Anode Cathode
Page 3/7 Absolute Maximum Ratings at Ta=25 Parameter Symbol Ratings SBK UNIT Forward Current Per Chip IF 3 ma Peak Forward Current Per Chip (Duty 1/1,.1ms Pulse Width) IFP 1 ma Power Dissipation Per Chip PD 12 mw Reverse Current Per Any Chip Ir 5 μa Electrostatic Discharge( * ) ESD 5 V Operating Temperature Topr -25 ~ +85 Storage Temperature Tstg -25 ~ +85 * Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 26 Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Part Selection And Application Information(Ratings at 25 ) PART NO Material CHIP Emitted common cathode or anode λp (nm) λd (nm) λ (nm) Electrical Vf(v) Iv(mcd) Typ. Max. Min. Typ. IV-M InGaN/SiC Blue Common Anode 468 47 26 3.5 4.2 1.5 18 2:1 Note : 1.The forward voltage data did not including ±.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance.
Page 4/7 Test Condition For Each Parameter Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=2mA Luminous Intensity Per Chip Iv mcd If=3mA Peak Wavelength λp nm If=2mA Dominant Wavelength λd nm If=2mA Spectral Line Half-Width λ nm If=2mA Reverse Current Any Chip Ir μa Vr=5V Luminous Intensity Matching Ratio IV-M
Page 5/7 Typical Electro-Optical Characteristics Curve SBK CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current Forward Current(mA) 3 1.5 25 2 15 1 5 Relative Intensity Normalize @2mA 1.25 1..75.5.25 1 2 3 4 5 5 1 15 2 25 3 Forward Voltage(V) Forward Current(mA) Fig.3 Forward Current vs. Temperature Fig.4 Relative Intensity vs. Wavelength Forward Current@2mA 4 3 2 1 25 5 75 1 Relative Intensity@2mA 1..5 38 43 48 53 58 63 68 Ambient Temperature( ) Wavelength (nm)
Page 6/7 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:3W Max Temperature 35 C Max Soldering Time:3 Seconds Max(One Time) Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 26 C 2.Wave Soldering Profile Dip Soldering Preheat: 12 C Max Preheat time: 6seconds Max Ramp-up 2 C/sec(max) Ramp-Down:-5 C/sec(max) Solder Bath:26 C Max Dipping Time:3 seconds Max Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 26 C Temp( C) 26 26 C3sec Max 5 /sec max 12 25 2 /sec max Preheat 6 Seconds Max 5 1 15 Time(sec)
Page 7/7 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=1mA 3.t=1 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-75: 126 MIL-STD-883: 15 JIS C 721: B-1 High Temperature Storage Test 1.Ta=15 ±5 2.t=1 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:18 JIS C 721: B-1 Low Temperature Storage Test 1.Ta=-4 ±5 2.t=1 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 721: B-12 High Temperature High Humidity Test 1.Ta=65 ±5 2.RH=9%~95% 3.t=24hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. MIL-STD-22:13B JIS C 721: B-11 Thermal Shock Test 1.Ta=15 ±5 &-4 ±5 (1min) (1min) 2.total 1 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-22: 17D MIL-STD-75: 151 MIL-STD-883: 111 Solder Resistance Test 1.T.Sol=26 ±5 2.Dwell time= 1 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-22: 21A MIL-STD-75: 231 JIS C 721: A-1 Solderability Test 1.T.Sol=23 ±5 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-22: 28D MIL-STD-75: 226 MIL-STD-883: 23 JIS C 721: A-2