SMBTA/MMBTA NPN Silicon Switching Transistor Low collectoremitter saturation voltage omplementary type: SMBT97A / MMBT97A (PNP) 1 Pbfree (RoHS compliant) package Qualified according AE Q1 Type Marking Pin onfiguration Package SMBTA/MMBTA s1p 1 = B = E = SOT Maximum Ratings Parameter Symbol alue Unit ollectoremitter voltage EO 4 ollectorbase voltage BO 7 Emitterbase voltage EBO 6 ollector current I 6 ma Total power dissipation T S 77 P tot mw Junction temperature T j 1 Storage temperature T stg 6... 1 Thermal Resistance Parameter Symbol alue Unit Junction soldering point 1) R thjs K/W 1 For calculation of RthJA please refer to Application Note AN77 (Thermal Resistance alculation) 1 1819
SMBTA/MMBTA Electrical haracteristics at T A =, unless otherwise specified Parameter Symbol alues Unit min. typ. max. D haracteristics ollectoremitter breakdown voltage I = ma, I B = ollectorbase breakdown voltage I = µa, I E = Emitterbase breakdown voltage I E = µa, I = ollectorbase cutoff current B = 6, I E = B = 6, I E =, T A = 1 Emitterbase cutoff current EB =, I = D current gain 1) I = µa, E = I = 1 ma, E = I = ma, E = I = 1 ma, E = 1 I = 1 ma, E = I = ma, E = (BR)EO 4 (BR)BO 7 (BR)EBO 6 I BO.1 µa I EBO na h FE 7 4 ollectoremitter saturation voltage 1) Esat I = 1 ma, I B = 1 ma. I = ma, I B = ma 1 Base emitter saturation voltage 1) BEsat I = 1 ma, I B = 1 ma.6 1. I = ma, I B = ma 1 Pulse test: t < µs; D < % 1819
SMBTA/MMBTA Electrical haracteristics at T A =, unless otherwise specified Parameter Symbol alues Unit min. typ. max. A haracteristics Transition frequency f T MHz I = ma, E =, f = MHz ollectorbase capacitance cb. pf B =, f = 1 MHz Emitterbase capacitance EB =., f = 1 MHz eb Shortcircuit input impedance I = 1 ma, E =, f = 1 khz I = ma, E =, f = 1 khz Opencircuit reverse voltage transf. ratio I = 1 ma, E =, f = 1 khz I = ma, E =, f = 1 khz Shortcircuit forward current transf. ratio I = 1 ma, E =, f = 1 khz I = ma, E =, f = 1 khz Opencircuit output admittance I = 1 ma, E =, f = 1 khz I = ma, E =, f = 1 khz Delay time =, I = 1 ma, I B1 = 1 ma, BE(off) =. Rise time =, I = 1 ma, I B1 = 1 ma, BE(off) =. Storage time =, I = 1 ma, I B1 = I B = 1mA Fall time =, I = 1 ma, I B1 = I B = 1mA Noise figure I = µa, E =, f = 1 khz, f = Hz, R S = 1 kω h 11e h 1e h 1e h e. 7 kω 8 1. 4 8 4 7 µs t d ns t r t stg t f 6 F 4 db 1819
SMBTA/MMBTA Test circuit Delay and rise time Ω Osc. 9.9 619 Ω. EHN Storage and fall time 16. ~ µs < ns 1 kω Ω Osc. 1.8 ~ µ s. Oscillograph: R > Ω, < 1pF, t r < ns EHN6 4 1819
SMBTA/MMBTA D current gain h FE = ƒ(i ) E = Saturation voltage I = ƒ( BEsat ; Esat ) h FE = SMBT /A EHP74 SMBT /A EHP74 ma h FE 1 Ι E BE 1 1 ma 1 1 Transition frequency f T = ƒ(i ) E = Ι 1..4.6.8 1. 1. BE sat, E sat ollectorbase capacitance cb = ƒ( B ) Emitterbase capacitance eb = ƒ( EB ) f T MHz SMBT /A EHP741 pf B(EB) 1 EB 1 ma 1 Ι B 1 B ( EB 1819
SMBTA/MMBTA Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load P totmax /P totd = ƒ(t p ) 6 mw P P tot max tot D SMBT /A t p = D T t p T EHP74 7 Ptot 4 18 1 1 1 D =..1...1.. 9 6 1 4 6 7 9 1 1 T S 6 4 s t p Delay time t d = ƒ(i ) Rise time t r = ƒ(i ) Storage time t stg = ƒ(i ) Fall time t f = ƒ(i ) ns SMBT /A EHP744 ns SMBT /A EHP74 t d,t r = = h FE t s, t f t r t r BE = t s h FE = BE = t d t f h FE = t d h FE = BE = 1 ma 1 Ι 1 ma 1 Ι 6 1819
Package SOT SMBTA/MMBTA Package Outline +.1 1).4..9 ±.1 1.9 1 B.9.4 ±.1.1 MIN. MAX. 1±.1.1 MAX....8 MAX..8...1 1. ±.1 A. M B. M A Foot Print 1) Lead width can be.6 max. in dambar area.8.8 1..9 1..9 Marking Layout (Example) EH s Manufacturer, June Date code (YM) Pin 1 BW66 Type code Standard Packing Reel ø18 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.9. 8.1.6 Pin 1.1 1.1 7 1819
SMBTA/MMBTA Edition 91116 Published by Infineon Technologies AG 8176 Munich, Germany 9 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 1819