TA7262P,TA7262P(LB),TA7262F

Similar documents
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168. DC I D 200 ma Pulse I DP 800

MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)

2SC4203 2SC4203. Video Output for High Definition VDT High Speed Switching Applications. Maximum Ratings (Ta = 25 C)

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU IN A GND

2SC5748 2SC5748. Horizontal Deflection Output for HDTV&Digital TV. Maximum Ratings (Tc 25 C) Electrical Characteristics (Tc 25 C)

2SC3074 2SC3074. High Current Switching Applications. Maximum Ratings (Ta = 25 C)

TC4013BP,TC4013BF,TC4013BFN

GT10Q301 GT10Q301. High Power Switching Applications Motor Control Applications. Maximum Ratings (Ta = 25 C) Equivalent Circuit. Marking

TC74LCX08F,TC74LCX08FN,TC74LCX08FT,TC74LCX08FK

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F

TC4511BP,TC4511BF TC4511BP/BF. TC4511B BCD-to-Seven Segment Latch/Decoder/Driver. Pin Assignment. Display

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2385

TC74LCX244F,TC74LCX244FW,TC74LCX244FT,TC74LCX244FK

TPCP8402 TPCP8402. Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C)

TPC8203 TPC8203. Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs. Maximum Ratings (Ta = 25 C) Circuit Configuration

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2996

TC74HC148AP,TC74HC148AF

TC4066BP,TC4066BF,TC4066BFN,TC4066BFT

TC74VHCT573AF,TC74VHCT573AFW,TC74VHCT573AFT

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3497

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU. Characteristic Symbol Test Condition Min Typ. Max Unit

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE. DC I D 100 ma Pulse I DP 200

TPCS8209 查询 TPCS8209 供应商 TPCS8209. Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools. Maximum Ratings (Ta = 25 C)

TPCF8402 F6B TPCF8402. Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosv) 2SK3538

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102

TC74HC373AP,TC74HC373AF,TC74HC373AFW

TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type. (P Channel U MOS IV/N Channel U-MOS III) TPC8405. Rating P Channel N Channel

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC8114. DC (Note 1) I D 18 A Pulse (Note 1) I DP 72

TC74HC74AP,TC74HC74AF,TC74HC74AFN

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3567

TC74HC7292AP,TC74HC7292AF

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004

TPCA8107-H 4± ± M A .0±.0± 0.15± ± ± ± ± ± 4.25±0.2 5±0. 3. Maximum Ratings (Ta 25 C)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK15J60U

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3767

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) 2SK4108. JEDEC Repetitive avalanche energy (Note 3) E AR 15 mj

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOSIII) 2SJ668

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅣ) 2SK4013

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiv) 2SK3565

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3667

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3

TC74VHC573F,TC74VHC573FW,TC74VHC573FT,TC74VHC573FK

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC8037-H

TC74VHC574F,TC74VHC574FW,TC74VHC574FT,TC74VHC574FK

TA78033AS, TA7804AS, TA7805AS, TA7807AS, TA7808AS, TA7809AS

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8028

TC74HC4051AP,TC74HC4051AF,TC74HC4051AFT TC74HC4052AP,TC74HC4052AF,TC74HC4052AFT TC74HC4053AP,TC74HC4053AF,TC74HC4053AFN,TC74HC4053AFT

IS2805 DESCRIPTION FEATURES

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TK12A50D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8017-H

TA7774P/PG, TA7774F/FG, TA7774FAG

IS181 DESCRIPTION FEATURES

TC74VHC164F,TC74VHC164FN,TC74VHC164FT,TC74VHC164FK

TLP250 TLP250. Transistor Inverter Inverter For Air Conditioner IGBT Gate Drive Power MOS FET Gate Drive. Truth Table

TC74HC155AP, TC74HC155AF

TC7WB66CFK,TC7WB66CL8X TC7WB67CFK,TC7WB67CL8X

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE

TC4028BP, TC4028BF TC4028BP/BF. TC4028B BCD-to-Decimal Decoder. Pin Assignment TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC74VCX14FT, TC74VCX14FK

Maintenance/ Discontinued

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FE. DC I D 100 ma Pulse I DP 200

TOSHIBA LED lamps TL12W01-L(T30)

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM6N7002BFU. DC I D 200 ma Pulse I DP 800

Maintenance/ Discontinued

TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FE

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N37FU

Derating of the MOSFET Safe Operating Area Outline:

TLRU1002A(T02), TLSU1002A(T02), TLOU1002A(T02), TLAU1002A(T02),TLYU1002A(T02), TLGU1002A(T02), TLPGU1002A(T02)

TLRE1002A(T02), TLSE1002A(T02), TLOE1002A(T02), TLYE1002A(T02), TLPYE1002A(T02), TLGE1002A(T02), TLFGE1002A(T02), TLPGE1002A(T02)

TC7SZ126F TC7SZ126F. 1. Functional Description. 2. Features. 3. Packaging Rev.3.0. Start of commercial production

S-5743 A Series 125 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC. Features. Applications. Package.

S-57M1 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH. Features. Applications. Package. ABLIC Inc., Rev.1.

TPCP8404 TPCP8404. Portable Equipment Applications Motor Drive Applications. Absolute Maximum Ratings (Ta = 25 C) Circuit Configuration

Detection of S pole Detection of N pole Active "L" Active "H" Nch open-drain output Nch driver built-in pull-up resistor. f C = 250 khz typ.

Maintenance/ Discontinued

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

LB1846M, 1848M. Low-Voltage/Low Saturation Voltage Type Bidirectional Motor Driver

TLRK1100C(T11), TLRMK1100C(T11), TLSK1100C(T11), TLOK1100C(T11), TLYK1100C(T11)

TOSHIBA Digital Integrated Circuit Silicon Monolithic TC7SP3125CFC

P D = 5 W / 6 W Transient Voltage Suppressor. Description. Package SZ-10. Features. Selection Guide. Applications. Typical Application

P D = 5 W Transient Voltage Suppressor. Package. Description. Features. Applications. Typical Application. (1) (2) (1) Cathode (2) Anode

S-57P1 S Series FOR AUTOMOTIVE 150 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC. Features. Applications.

FG Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits. Package. Overview. Features. Marking Symbol: V7

TC7WP3125FK, TC7WP3125FC

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous

Maintenance/ Discontinued

AN78Lxx/AN78LxxM Series

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiii) 2SK2613

P D = 5 W / 6 W Transient Voltage Suppressor. Package SZ-10. Description. Features. Selection Guide. Applications. Typical Application

1-A Dual-HBD (Dual-Half-Bridge Driver) TLE4207G

Linear Regulator Application Information

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous

DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.

Transcription:

TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7262P,TA7262P(LB),TA7262F DC MOTOR DRIVER (3 PHASE Bi DIRECTIONAL) The TA7262P / P (LB) / F are 3 Phase Bi Directional supply voltage control Motor Driver IC. It s designed especially for energy saving Motor Control System. It contains Power Drivers, CW / CCW control circuit position sensing amplifiers and current regulator for external connected position sensing elements. FEATURES Output Current is Up to 1.5 A (AVE). Supply Voltage Control Motor Driver. Variable Current Source for Hall Sensor Including. Few External Parts Required. High Sensitivity of Position Sensing Inputs. BLOCK DIAGRAM Weight HDIP14 P 500 2.54A: 3.00 g (Typ.) HSOP14 P 2.54 : 3.00 g (Typ.) HSOP20 P 450 1.00 : 0.79 g (Typ.) 1

PIN FUNCTION PIN No. P TYPE F TYPE SYMBOL FUNCTION DESCRIPTION 1 1 H b + b phase Hall Amp. positive input terminal 2 2 H b b phase Hall Amp. negative input terminal 3 4 H c + c phase Hall Amp. positive input terminal 4 5 H c c phase Hall Amp. negative input terminal 5 6 L c c phase drive output terminal 6 8 L b b phase drive output terminal 7 10 V S Supply voltage terminal for motter driver 8 12 L a a phase drive output terminal 9 13 3ST Forward rotation / Reverse rotation / Stop switch terminal 10 14 V CC Power supply input terminal for small signal 11 16 I R Hall element bias current control terminal 12 18 I O Hall element bias negative side connector terminal 13 19 H a a phase Hall Amp. negative input terminal 14 20 H a + a phase Hall Amp. positive input terminal Fin Fin GND F Type: Pin (3), (7), (9), (11), (15), (17) N. C. FUNCTION FRS INPUT POSITION SENSING INPUT COIL OUTPUT H a H b H c L a L b L c 1 0 1 H L M 1 0 0 H M L CW 1 1 0 M H L 0 1 0 L H M 0 1 1 L M H 0 0 1 M L H 1 0 1 L H M 1 0 0 L M H CCW 1 1 0 M L H 0 1 0 H L M 0 1 1 H M L 0 0 1 M H L 1 0 1 1 0 0 STOP 1 1 0 0 1 0 0 1 1 0 0 1 High Impedance 2

MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage (MOTOR) V S 25 V Supply Voltage (CONTROL) V CC 25 V Output Current (MOTOR) I O 1.5 A Output Current I CS 40 ma Position Sensing Input Voltage V H 400 mv p p Power Dissipation TA7262P 2.3 TA7262P (LB) P D (Note) 2.3 TA7262F 1.0 Operating Temperature Topr 30~75 C Storage Temperature T stg 55~150 C W Note: No heat sink ELECTRICAL CHARACTERISTICS (Unless otherwise specified, V CC = 9 V, V S = 12.8 V, 3ST = 5 V, V H = ±20 mv, R L = 6 Ω, Ta = 25 C) Quiescent Current CHARACTERISTIC SYMBOL I CC 1 I CC 2 I CC 3 TEST CIR CUIT TEST CONDITION (TA7262P, TA7262P (LB)) V CC = 9 V, 3 ST GND, V S open V CC = 25 V, 3 ST GND, V S open MIN TYP. MAX UNIT 5.7 6.5 8.0 11.0 Stop (3 ST = V CC ) 4 Saturation Voltage V SAT I O = 1 A, (total) 2.0 V Saturation Voltage Differential D V SAT I O = 1 A 100 180 mv Cut off Current Position Sensing Input Voltage CW / CCW Control Operating Voltage Output Current of Current Source Upper I CC U V S = 22 V 50 Lower I CC L V S = 22 V 50 Input Sensitivity V H 20 mv p p Input Offset V OFST 0 5 mv Operating DC Level CMR 2 V CC 2.5 V CW V FW 1.2 7.8 Stop V STP 8.6 V CC CCW V RV 0 0.4 I CS 1 I R open 1.5 2.2 3.0 I CS 2 I R = 100 Ω 3.0 4.4 5.5 ma µa V ma 3

4

APPLICATION CIRCUIT 1 *: Hall sensor driving current (I O ) can be changed by I R. Refer to I R vs I O characteristics. APPLICATION CIRCUIT 2 APPLICATION CIRCUIT 3 Q2 works as a Current Regulator for Output Coil. Therefore, Collector to Emitter Voltage of Q2 is varied in accordance with required coil current. Note 1: Utmost care is necessary in the design of the output line, V S and GND line since IC may be destroyed due to short circuit between outputs, air contamination fault, or fault by improper grounding. Note 2: Don t keep 3 ST terminal open. 5

PACKAGE DIMENSIONS HDIP14 P 500 2.54A Unit: mm Weight: 3.00 g (Typ.) 6

PACKAGE DIMENSIONS HSOP14 P 2.54 Unit: mm Weight: 3.00 g (Typ.) 7

PACKAGE DIMENSIONS HSOP20 P 450 1.00 Unit: mm Weight: 0.79 g (Typ.) 8

RESTRICTIONS ON PRODUCT USE TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. The products described in this document are subject to the foreign exchange and foreign trade laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 000707EBA 9