Rev. 1 2 August 22 Product data 1. Description N-channel, enhancement mode field-effect power transistor. Product availability: PHP7NQ6E in TO-22AB (SOT78) PHX7NQ6E in isolated TO-22AB. 2. Features Very fast switching Available in plastic and plastic full-pack package Low thermal resistance. 3. Applications 4. Pinning information DC to DC converters Switched mode power supplies Electronic lighting ballasts T.V. and computer monitor power supplies. Table 1: Pinning - TO-22AB and isolated TO-22AB, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) 2 drain (d) 3 source (s) mb (TO-22AB only) mounting base, connected to drain (d) mb 1 2 3 MBK16 TO-22AB (SOT78) mb 1 2 3 MBB76 s MBK11 isolated TO-22AB g d
5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit V DS drain-source voltage (DC) 25 C T j 15 C - 6 V I D drain current (DC) T c =25 C; V GS =1V [1] - 7 A T j junction temperature - 15 C R DSon drain-source on-state resistance V GS =1V; I D = 3.5 A T j =25 C.94 1.2 Ω T j = 15 C 2.4 2.9 Ω 6. Limiting values Table 3: Limiting values Symbol Parameter Conditions Min Max Unit V DS drain-source voltage (DC) 25 C T j 15 C - 6 V V DGR drain-gate voltage (DC) 25 C T j 15 C; R GS =2kΩ - 6 V V GS gate-source voltage (DC) - ±3 V I D drain current (DC) T c =25 C; V GS =1V; [1] - 7 A T c = 1 C; V GS =1V; [1] - 4.5 A Figure 3 and 4 I DM peak drain current T c =25 C; pulsed; t p 1 µs; - 28 A Figure 5 and 6 P tot total power dissipation (TO-22AB) T c =25 C; Figure 1-147 W P tot total power dissipation (isolated T c =25 C; Figure 2-37 W TO-22AB) T stg storage temperature 55 +15 C T j junction temperature 55 +15 C V isol R.M.S isolation voltage from all three terminals to external heatsink f = 5 to 6 Hz; sinusoidal waveform; R.H. 65%; clean and dust-free; isolated TO-22AB only [1] For isolated TO-22AB limited only by maximum temperature allowed - 25 V Source-drain diode I S source (diode forward) current (DC) T c =25 C - 7 A Avalanche ruggedness E DS(AL)S E DS(AL)R I DS(AL)S non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy non-repetitive drain-source avalanche current unclamped inductive load, I AS = 6.5 A; t p = 2.3 ms; T j prior to avalanche = 25 C; V DD 5 V; R GS =5Ω; V GS =1V I AR = 7 A; t p = 2.5 µs; T j prior to avalanche = 25 C; R GS =5Ω; V GS =1V - 316 mj - 13 mj - 7 A Product data Rev. 1 2 August 22 2 of 15
12 3ak23 12 3ak39 P der (%) P der (%) 8 8 4 4 5 1 T mb ( C) 15 5 1 T hs ( C) 15 Fig 1. TO-22AB normalized total power dissipation as a function of mounting base temperature. Fig 2. Isolated TO-22AB normalized total power dissipation as a function of heatsink temperature. 12 Ider (%) 3ak26 12 Ider (%) 3ak4 8 8 4 4 5 1 15 T mb ( C) 5 1 Ths ( C) 15 T hs ( C) Fig 3. TO-22AB normalized continuous drain current as a function of mounting base temperature. Fig 4. Isolated TO-22AB normalized continuous drain current as a function of heatsink temperature. Product data Rev. 1 2 August 22 3 of 15
1 2 3ak28 I D (A) 1 limit R DSon = V DS / I D t p = 1 µs 1 µs 1 DC 1 ms 1 ms 1 ms 1-1 1 1 2 VDS (V) 1 3 Fig 5. T mb =25 C; I DM is single pulse. TO-22AB safe operating area; continuous and peak drain currents as a function of drain-source voltage. 1 2 3ak29 ID (A) limit R DSon = V DS / I D 1 1 tp = 1 µs 1 µs 1 1 ms 1-1 DC 1 ms 1 ms 1-2 1 1 2 1 3 V DS (V) Fig 6. T hs =25 C; I DM is single pulse. Isolated TO-22AB safe operating area; continuous and peak drain currents as a function of drain-source voltage. Product data Rev. 1 2 August 22 4 of 15
7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-mb) R th(j-hs) R th(j-a) thermal resistance from junction to mounting base TO-22AB Figure 7 - -.85 K/W thermal resistance from junction to heatsink isolated TO-22AB Figure 8 - - 3.4 K/W thermal resistance from junction to ambient isolated TO-22AB package vertical in still air - 55 - K/W TO-22AB package vertical in still air - 6 - K/W 7.1 Transient thermal impedance 1 3ak24 Zth(j-mb) (K/W) 1 δ =.5.2.1 1-1 1-2.5.2 single pulse P t p δ = T 1-3 1-5 1-4 1-3 1-2 1-1 1 1 tp (s) t p T t Fig 7. TO-22AB transient thermal impedance from junction to mounting base as a function of pulse duration. Product data Rev. 1 2 August 22 5 of 15
1 3ak25 Z th(j-hs) (K/W) 1 δ =.5.2.1.5 1-1.2 1-2 single pulse P t p δ = T 1-3 1-5 1-4 1-3 1-2 1-1 1 1 tp (s) t p T t Fig 8. Isolated TO-22AB transient thermal impedance from junction to heatsink as a function of pulse duration. Product data Rev. 1 2 August 22 6 of 15
8. Characteristics Table 5: Characteristics T j =25 C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source breakdown voltage I D = 25 µa; V GS = V 6 - - V T j = 55 C 534 - - V V GS(th) gate-source threshold voltage I D = 25 µa; V DS =V GS ; Figure 13 T j =25 C 2 2.9 4 V T j = 15 C 1 - - V T j = 55 C - 3.2 4.5 V I DSS drain-source leakage current V GS =V; V DS = 6 V T j =25 C -.3 1 µa T j = 125 C; V DS = 48V - 15 5 µa I GSS gate-source leakage current V DS =V; V GS = ±1 V - 2 2 na R DSon drain-source on-state resistance V GS = 1 V; I D = 3.5 A; Figure 11 and 12 T j =25 C -.94 1.2 Ω T j = 15 C - 2.4 2.9 Ω C isol Capacitance from pin 2 to external heatsink f = 1 MHz; isolated TO-22AB only - 1 - pf Dynamic characteristics Q g(tot) total gate charge I D =7A;V DD = 48 V; V GS =1V;Figure 17-27 - nc Q gs gate-source charge - 3.6 - nc Q gd gate-drain (Miller) charge - 1 - nc C iss input capacitance V GS =V; V DS = 25 V; f = 1 MHz; Figure 15-113 - pf C oss output capacitance - 15 - pf C rss reverse transfer capacitance - 24 - pf t d(on) turn-on delay time V DD = 3 V; R D =39Ω; R G = 9.1 Ω - 17 - ns t r rise time - 2 - ns t d(off) turn-off delay time - 4 - ns t f fall time - 2 - ns Source-drain diode V SD source-drain (diode forward) voltage I S = 7 A; V GS =V;Figure 16 -.9 1.2 V t rr reverse recovery time I S = 7 A; di S /dt = 1 A/µs; V GS = V - 53 - ns Q r recovered charge - 6.7 - µc Product data Rev. 1 2 August 22 7 of 15
12 I D (A) 12 V 3ak27 1 V 2 I D (A) V DS > I D x R DSon 3ak31 8 7.5 V 7 V 6.5 V 6 V 5.5 V 15 1 4 5 V 4.5 V 5 15 C V GS = 4 V 5 1 15 2 V DS (V) T j = 25 C 2 4 6 8 V GS (V) Fig 9. T j =25 C Output characteristics: drain current as a function of drain-source voltage; typical values. T j =25 C and 15 C; V DS > I D xr DSon Fig 1. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 5 RDSon (Ω) 4 4 V 4.5 V 5 V 3ak3 3 a 3ak34 3 5.5 V 6 V 6.5 V 2 2 7 V 7.5 V 1 V 1 1 VGS = 12 V 4 8 12 ID (A) -6 1 8 15 Tj ( C) T j =25 C Fig 11. Drain-source on-state resistance as a function of drain current; typical values. R a = DSon --------------------------- R DSon ( 25 C ) Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature. Product data Rev. 1 2 August 22 8 of 15
5 V GS(th) (V) 4 max 3ak16 1-1 I D (A) 1-2 3ak33 3 typ 1-3 min typ max 2 min 1-4 1 1-5 -6 1 8 15 T j ( C) 1-6 2 4 6 V GS (V) I D = 1 ma; V DS =V GS T j =25 C; V DS =5V Fig 13. Gate-source threshold voltage as a function of junction temperature. Fig 14. Sub-threshold drain current as a function of gate-source voltage. 1 4 C (pf) 1 3 3ak35 Ciss 1 2 Coss 1 Crss 1 1-1 1 1 1 2 1 3 VDS (V) V GS =V;f=1MHz Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Product data Rev. 1 2 August 22 9 of 15
2 3ak22 15 3ak36 I S (A) V GS = V V GS (V) T j = 25 C 15 1 1 5 15 C T j = 25 C 5 V DD = 48 V V DD = 2 V V DD = 1 V.3.6.9 1.2 V SD (V) 1 2 3 Q G (nc) T j =25 C and 15 C; V GS =V Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. I D = 7 A; V DD = 1 V; 2 V; 48 V Fig 17. Gate-source voltage as a function of gate charge; typical values. Product data Rev. 1 2 August 22 1 of 15
9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-22AB SOT78 E p A A 1 D 1 q mounting base D L 1 (1) L 2 Q L b 1 1 2 3 b c e e 5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L2 L1 (1) p max. mm 4.5 1.39.9 1.3.7 15.8 6.4 1.3 15. 3.3 3.8 2.54 3. 4.1 1.27.7 1..4 15.2 5.9 9.7 13.5 2.79 3.6 q 3. 2.7 Q 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC EIAJ 3-lead TO-22AB SC-46 EUROPEAN PROJECTION ISSUE DATE -9-7 1-2-16 Fig 18. TO-22AB (SOT78) Product data Rev. 1 2 August 22 11 of 15
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-22 'full pack' SOT186A E P A 1 A q D 1 T mounting base D j L 2 b 1 L1 K Q L b 2 1 2 3 b w M c e e 1 5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mm 4.6 4. A 1 2.9 2.5 b.9.7 (1) b 1 b c D D 1 e L L 2 E e 1 j K L 1 2 P Q q max. 1.1 1.4.7 15.8 6.5 1.3 2.7.6 14.4 3.3 3.2 2.6 3. 2.54 5.8 3.9 1..4 15.2 6.3 9.7 1.7.4 13.5 2.79 3. 2.3 2.6 Notes 1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned. 2. Both recesses are 2.5.8 max. depth T (2) w 2.5.4 OUTLINE VERSION SOT186A REFERENCES IEC JEDEC JEITA 3-lead TO-22F EUROPEAN PROJECTION ISSUE DATE 2-3-12 2-4-9 Fig 19. isolated TO-22AB Product data Rev. 1 2 August 22 12 of 15
1. Revision history Table 6: Revision history Rev Date CPCN Description 1 2282 Product specification; initial version. Product data Rev. 1 2 August 22 13 of 15
11. Data sheet status Data sheet status [1] Product status [2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-65A. [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions 13. Disclaimers Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 6134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. Fax: +31 4 27 24825 9397 75 1153 Koninklijke Philips Electronics N.V. 22. All rights reserved. Product data Rev. 1 2 August 22 14 of 15
Contents 1 Description............................. 1 2 Features............................... 1 3 Applications............................ 1 4 Pinning information...................... 1 5 Quick reference data..................... 2 6 Limiting values.......................... 2 7 Thermal characteristics................... 5 7.1 Transient thermal impedance.............. 5 8 Characteristics.......................... 7 9 Package outline........................ 11 1 Revision history........................ 13 11 Data sheet status....................... 14 12 Definitions............................ 14 13 Disclaimers............................ 14 Koninklijke Philips Electronics N.V. 22. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 2 August 22 Document order number: 9397 75 1153