TPC TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R DS (ON) = 3.5 mω (typ.) High forward transfer admittance: Y fs = S (typ.) Low leakage current: I DSS = μa (max) (V DS = 3 V) Enhancement mode: V th =.3 to.5 V (V DS = V, I D = ma) Absolute Maximum Ratings () Characteristics Symbol Rating Unit Drain-source voltage V DSS 3 V Drain-gate voltage (R GS = kω) V DGR 3 V Gate-source voltage V GSS ± V Drain current DC (Note ) I D A Pulse (Note ) I DP 7 Drain power dissipation (t = s) (Note a) P D.9 W Drain power dissipation (t = s) (Note b) P D. W Single pulse avalanche energy (Note 3) E AS mj Avalanche current I AR A Repetitive avalanche energy (Note a) (Note ) E AR. mj Channel temperature T ch 5 C JEDEC JEITA TOSHIBA -JB Weight:. g (typ.) Circuit Configuration 7 5 Storage temperature range T stg 55 to 5 C Note, Note, Note 3 and Note : See the next page. 3 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions /Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 7--3
TPC Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = s) (Note a) Thermal resistance, channel to ambient (t = s) (Note b) R th (ch-a) 5. C/W R th (ch-a) 5 C/W Marking (Note 5) TPC Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note : Ensure that the channel temperature does not exceed 5 C. Note : (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR- 5. 5.. (unit: mm) FR- 5. 5.. (unit: mm) (a) (b) Note 3: V DD = V, T ch = 5 C (initial), L =. mh, I AR = A Note : Repetitive rating: pulse width limited by max channel temperature Note 5: on lower left of the marking indicates Pin. Weekly code: (Three digits) Week of manufacture ( for the first week of a year: sequential number up to 5 or 53) Year of manufacture (The last digit of a year) 7--3
TPC Electrical Characteristics () Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ± V, V DS = V ± na Drain cut-off current I DSS V DS = 3 V, V GS = V μa Drain-source breakdown voltage V (BR) DSS I D = ma, V GS = V 3 V V (BR) DSX I D = ma, V GS = V Gate threshold voltage V th V DS = V, I D = ma.3.5 V Drain-source ON resistance R DS (ON) V GS =.5 V, I D = 9 A 5.. mω V GS = V, I D = 9 A 3.5.3 Forward transfer admittance Y fs V DS = V, I D = 9 A S Input capacitance C iss Reverse transfer capacitance C rss V DS = V, V GS = V, f = MHz 37 pf Output capacitance C oss 57 Switching time Rise time t r V V I D = 9 A GS V Turn-ON time t V OUT on Fall time t f 9 Turn-OFF time t off V DD 5 V Duty < = %, t w = μs 5 Total gate charge (gate-source plus gate-drain) Q g 5 Gate-source charge Q gs V DD V, V GS = V, I D = A Gate-drain ( miller ) charge Q gd.7 Ω RL =.7 Ω 5 ns nc Source-Drain Ratings and Characteristics () Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note ) I DRP 7 A Forward voltage (diode) V DSF I DR = A, V GS = V. V 3 7--3
TPC, 3. 3..5 I D V DS 3. 3.3 3. 3. VGS = 3 V 5 3.5 I D V DS 3. 3. 3. 3.3 3. 3..... VGS = 3 V.... Drain-source voltage V DS (V) 5 3 VDS = V I D V GS Ta = 55 C 5 Drain source voltage VDS (V)..... V DS V GS 9.5 ID = A 3 5 Gate source voltage V GS (V) Gate source voltage V GS (V) Forward transfer admittance Yfs (S) Ta = 55 C.. Y fs I D R DS (ON) I D 5 VDS = V Drain source ON resistance RDS (ON) (mω).5 VGS = V. Drain current I D (A) Drain current I D (A) 7--3
TPC Drain-source ON resistance RDS (ON) (mω) VGS =.5 V VGS = V R DS (ON) Ta ID =.5,9, A ID =.5,9, A Drain reverse current IDR (A) I DR V DS.5 3 VGS = V Ambient temperature Ta ( C)...... Capacitance V DS 3 V th Ta Capacitance C (pf) Ciss Coss Crss VGS = V f = MHz. Gate threshold voltage Vth (V).5.5.5 VDS = V ID = ma Ambient temperature Ta ( C) Drain power dissipation PD (W).... () () P D Ta () Device mounted on a glass-epoxyboard (a) (Note a) () Device mounted on a glass-epoxyboard (b) (Note b) t = s Drain source voltage VDS (V) 5 3 VDS Dynamic input/output characteristics VDD = V VGS. ID = A Gate source voltage VGS (V) Ambient temperature Ta ( C) 3 5 Total gate charge Q g (nc) 7 5 7--3
TPC Transient thermal impedance rth ( C/W) ()Device mounted on a glass-epoxyboard (a)(note a) ()Device mounted on a glass-epoxyboard (b)(note b) r th t w () ().... Pulse width t w (s) Single pulse Safe operating area ID max (Pulse) * t = ms * ms * * Single pulse Curves must be derated linearly with increase in temperature.. VDSS max. 7--3
TPC RESTRICTIONS ON PRODUCT USE 77-EN The information contained herein is subject to change without notice. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).these TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer s own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 7--3