Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP N.V. (year). All rights reserved or Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia
M3D87 Rev. 2 2 May 22 Product data. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT223. 2. Features TrenchMOS technology Very fast switching Surface mount package. 3. Applications. Pinning information Primary side switch in DC to DC converters High speed line driver Fast general purpose switch. Table : Pinning - SOT223, simplified outline and symbol Pin Description Simplified outline Symbol gate (g) 2 drain (d) d 3 source (g) drain (d) 2 3 g MBB76 s Top view MSB2 - SOT223
5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit V DS drain-source voltage (DC) 25 C T j 5 C - V I D drain current (DC) T sp =25 C; V GS =V - 3.5 A P tot total power dissipation T sp =25 C - 6.9 W T j junction temperature - 5 C R DSon drain-source on-state resistance V GS = V; I D =.75 A T j =25 C 2 25 mω T j = 5 C - 575 mω 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 63). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage (DC) 25 C T j 5 C - V V DGR drain-gate voltage (DC) 25 C T j 5 C; R GS =2kΩ - V V GS gate-source voltage (DC) - ±2 V I D drain current (DC) T sp =25 C; V GS =V; - 3.5 A Figure 2 and 3 T sp = C; V GS =V;Figure 2-2.2 A I DM peak drain current T sp =25 C; pulsed; t p µs; - A Figure 3 P tot total power dissipation T sp =25 C; Figure - 6.9 W T stg storage temperature 65 +5 C T j junction temperature 65 +5 C Source-drain diode I S source (diode forward) current (DC) T sp =25 C - 3.5 A I SM peak source (diode forward) current T sp =25 C; pulsed; t p µs - A Avalanche ruggedness E DS(AL)S I DS(AL)SM non-repetitive drain-source avalanche energy peak non-repetitive drain-source avalanche current unclamped inductive load; I D = 3.5 A; t p =.2 ms; V DD 5 V; R GS =5Ω; V GS = V; starting T j =25 C; Figure - 5 mj - 3.5 A 9397 75 958 Koninklijke Philips Electronics N.V. 22. All rights reserved. Product data Rev. 2 2 May 22 2 of 2
2 3aa7 2 3aa25 P der (%) I der (%) 8 8 5 5 2 T sp ( C) 5 5 2 T sp ( C) P der = P tot ---------------------- % P tot ( 25 C ) V GS V I D I der = ------------------ % I D25C ( ) Fig. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. 2 I D (A) Limit R DSon = V DS /I D t p = µs 3aa88 I AS (A) 3aa97 µs 25 C ms - DC ms ms T j prior to avalanche = 25 C -2 2 3 V DS (V) - -2 - t p (ms) Fig 3. T sp =25 C; I DM is single pulse. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. Fig. Unclamped inductive load; V DD 5 V; R GS =5Ω; V GS = V; starting T j =25 C and 25 C. Non-repetitive avalanche ruggedness current as a function of pulse duration. 9397 75 958 Koninklijke Philips Electronics N.V. 22. All rights reserved. Product data Rev. 2 2 May 22 3 of 2
7. Thermal characteristics Table : Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-sp) thermal resistance from junction to solder point 7. Transient thermal impedance mounted on a metal clad substrate; Figure 5 R th(j-a) thermal resistance from junction to ambient mounted on a printed circuit board; minimum footprint - - 8 K/W - 5 - K/W 2 3aa87 Z th(j-sp) (K/W) - -2 δ =.5.2..5.2 single pulse -5 - -3-2 - t p (s) P t p T t p δ = T t Fig 5. Mounted on a metal clad substrate. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 75 958 Koninklijke Philips Electronics N.V. 22. All rights reserved. Product data Rev. 2 2 May 22 of 2
8. Characteristics Table 5: Characteristics T j =25 C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source breakdown I D = 25 µa; V GS =V voltage T j =25 C 3 - V T j = 55 C 89 - - V V GS(th) gate-source threshold voltage I D = ma; V DS =V GS T j =25 C; Figure 2 3 V T j = 5 C; Figure.2 - - V T j = 55 C; Figure - - 6 V I DSS drain-source leakage current V DS = V; V GS =V T j =25 C - 25 µa T j = 5 C - 25 µa V DS = 6 V; V GS =V T j =85 C - - µa I GSS gate-source leakage current V GS = ±2 V; V DS = V - na R DSon drain-source on-state resistance V GS =V; I D =.75 A T j =25 C; Figure 8 and 9-2 25 mω T j = 5 C; Figure 9 - - 575 mω Dynamic characteristics g fs forward transconductance V DS =5V; I D = 3.5 A; -.2 S Figure 2 Q g(tot) total gate charge I D = 3.5 A; V DS =8V; - 7. - nc Q gs gate-source charge V GS =V;Figure 5 -.5 - nc Q gd gate-drain (Miller) charge - 3.3 - nc C iss input capacitance V GS =V; V DS =25V; - 3 - pf C oss output capacitance f = MHz; Figure 3 - - pf C rss reverse transfer capacitance - 2 - pf t d(on) turn-on delay time V DD = 5 V; R D =5Ω; - 8 - ns t r rise time V GS =V; R G =6Ω - 3 - ns t d(off) turn-off delay time - 2 - ns t f fall time - - ns Source-drain diode V SD source-drain (diode forward) voltage I S = 3.5 A; V GS =V; Figure -.87.5 V t rr reverse recovery time I S = 3.5 A; - 5 - ns Q r recovered charge di S /dt = A/µs; V GS =V; V DS =3V - - nc 9397 75 958 Koninklijke Philips Electronics N.V. 22. All rights reserved. Product data Rev. 2 2 May 22 5 of 2
I D (A) 8 T j = 25 C 3aa9 V GS = V I D (A) 8 V DS > I D X R DSon 3aa92 6 V 6 5.5 V 6 T j = 25 C 5 V.8 V 2.6 V.2 V..8.2.6 2 V DS (V) 2 5 C 2 6 8 V GS (V) Fig 6. T j =25 C Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 7. T j =25 C and 5 C; V DS > I D R DSon Transfer characteristics: drain current as a function of gate-source voltage; typical values. R DSon (Ω).8. V.8 V 3aa9 3 a 2.5 3aa29.6 5 V 2.5..2 T j = 25 C 5.5 V 6V V GS = V 2 6 8 I D (A).5-6 6 2 8 T j ( o C) T j =25 C R a = DSon --------------------------- R DSon ( 25 C ) Fig 8. Drain-source on-state resistance as a function of drain current; typical values. Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature. 9397 75 958 Koninklijke Philips Electronics N.V. 22. All rights reserved. Product data Rev. 2 2 May 22 6 of 2
5 V GS(th) (V) max 3aa32 - I D (A) -2 3aa35 3 typ -3 min typ max 2 min - -5-6 6 2 8 T j ( o C) -6 2 6 V GS (V) I D = ma; V DS =V GS T j =25 C; V DS =5V Fig. Gate-source threshold voltage as a function of junction temperature. Fig. Sub-threshold drain current as a function of gate-source voltage. 5 g fs (S) V DS > I D X R DSon T j = 25 C 3aa93 3 C (pf) 3aa95 C iss 5 C 3 2 2 C rss C oss 2 6 8 I D (A) - 2 V DS (V) T j =25 C and 5 C; V DS > I D R DSon Fig 2. Forward transconductance as a function of drain current; typical values. V GS = V; f = MHz Fig 3. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 75 958 Koninklijke Philips Electronics N.V. 22. All rights reserved. Product data Rev. 2 2 May 22 7 of 2
I S (A) 8 3aa9 V GS (V) 5 I D = 3.5 A T j = 25 C V DS = 2 V 3aa96 6 T j = 5 C V DS = 8 V 2 25 C 5.2..6.8.2 V SD (V) 8 2 Q G (nc) T j =25 C and 5 C; V GS =V I D = 3.5 A; V DS =8V Fig. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 5. Gate-source voltage as a function of gate charge; typical values. 9397 75 958 Koninklijke Philips Electronics N.V. 22. All rights reserved. Product data Rev. 2 2 May 22 8 of 2
9. Package outline Plastic surface mounted package; collector pad for good heat transfer; leads SOT223 D B E A X c y H E v M A b Q A A 2 3 L p e b p w M B detail X e 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A b p b c D E e e H E L p Q v w y mm.8.5...8.6 3. 2.9.32.22 6.7 6.3 3.7 3.3.6 2.3 7.3 6.7..7.95.85.2.. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT223 SC-73 97-2-28 99-9-3 Fig 6. SOT223. 9397 75 958 Koninklijke Philips Electronics N.V. 22. All rights reserved. Product data Rev. 2 2 May 22 9 of 2
. Revision history Table 6: Revision history Rev Date CPCN Description 2 2252 - Product data (9397 75 958) Modifications: Additional I DSS data added. 273 - Product specification; initial version. 9397 75 958 Koninklijke Philips Electronics N.V. 22. All rights reserved. Product data Rev. 2 2 May 22 of 2
. Data sheet status Data sheet status [] Product status [2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-65A. [] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 2. Definitions 3. Disclaimers Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 63). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.. Trademarks TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. Fax: +3 27 2825 9397 75 958 Koninklijke Philips Electronics N.V. 22. All rights reserved. Product data Rev. 2 2 May 22 of 2
Contents Description............................. 2 Features............................... 3 Applications............................ Pinning information...................... 5 Quick reference data..................... 2 6 Limiting values.......................... 2 7 Thermal characteristics................... 7. Transient thermal impedance.............. 8 Characteristics.......................... 5 9 Package outline......................... 9 Revision history........................ Data sheet status....................... 2 Definitions............................ 3 Disclaimers............................ Trademarks............................ Koninklijke Philips Electronics N.V. 22. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 2 May 22 Document order number: 9397 75 958