Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28x Series Features Surface Mount Packages Low Flicker Noise Low FIT (Failure in Time) Rate* Six-sigma Quality Level Single, Dual and Quad Versions Tape and Reel Options Available Package Lead Code Identification, SOT-2/SOT-4 (Top View) SINGL #0 UNCONNCTD PAIR 4 SRIS #2 RING QUAD 4 COMMON ANOD # BRIDG QUAD 4 COMMON CATHOD #4 * For more information see the Surface Mount Schottky Reliability Data Sheet. Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. The HSMS-28x series of diodes features very low flicker (/f) noise. Note that Agilent s manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match. #5 #7 Package Lead Code Identification, SOT-2 (Top View) SINGL B COMMON ANOD SRIS C COMMON CATHOD F #8 Package Lead Code Identification, SOT-6 (Top View) HIGH ISOLATION UNCONNCTD PAIR 6 5 4 K UNCONNCTD TRIO 6 5 4 L Pin Connections and Package Marking 2 GUx Notes:. Package marking provides orientation and identification. 2. See lectrical Specifications for appropriate package marking. 6 5 4
2 Absolute Maximum Ratings [] T C = 25 C Symbol Parameter Unit SOT-2/SOT-4 SOT-2/SOT-6 I f Forward Current ( µs Pulse) Amp P IV Peak Inverse Voltage V Same as V BR Same as V BR T j Junction Temperature C 50 50 T stg Storage Temperature C -65 to 50-65 to 50 θ jc Thermal Resistance [2] C/W 500 50 Notes:. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. T C = +25 C, where T C is defined to be the temperature at the package pins where contact is made to the circuit board. SD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge. lectrical Specifications T C = 25 C, Single Diode [4] Maximum Maximum Minimum Maximum Forward Reverse Typical Part Package Breakdown Forward Voltage Leakage Maximum Dynamic Number Marking Lead Voltage Voltage V F (V) @ I R (na) @ Capacitance Resistance HSMS [5] Code Code Configuration V BR (V) V F (mv) I F (ma) V R (V) C T (pf) R D (Ω) [6] 280 B0 [] 0 Single 20 400.0 5 200 5.2 5 282 B2 [] 2 Series 28 B [] Common Anode 284 B4 [] 4 Common Cathode 285 B5 [] 5 Unconnected Pair 287 B7 [] 7 Ring Quad [5] 288 B8 [] 8 Bridge Quad [5] 28B B0 [7] B Single 28C B2 [7] C Series 28 B [7] Common Anode 28F B4 [7] F Common Cathode 28K BK [7] K High Isolation Unconnected Pair 28L BL [7] L Unconnected Trio Test Conditions I R = 0 µa I F = ma V F = 0 V I F = 5 ma f = MHz Notes:. V F for diodes in pairs and quads in 5 mv maximum at ma. 2. C TO for diodes in pairs and quads is 0.2 pf maximum.. Package marking code is in white. 4. ffective Carrier Lifetime (τ) for all these diodes is 00 ps maximum measured with Krakauer method at 5 ma. 5. See section titled Quad Capacitance. 6. R D = R S + 5.2 Ω at 25 C and I f = 5 ma. 7. Package marking code is laser marked.
Quad Capacitance Capacitance of Schottky diode quads is measured using an HP427 LCR meter. This instrument effectively isolates individual diode branches from the others, allowing accurate capacitance measurement of each branch or each diode. The conditions are: 20 mv R.M.S. voltage at MHz. Agilent defines this measurement as CM, and it is equivalent to the capacitance of the diode by itself. The equivalent diagonal and adjacent capacitances can then be calculated by the formulas given below. In a quad, the diagonal capacitance is the capacitance between points A and B as shown in the figure below. The diagonal capacitance is calculated using the following formula C x C 2 C x C 4 CDIAGONAL = + C + C 2 C + C 4 C C C C 2 C 4 A B The equivalent adjacent capacitance is the capacitance between points A and C in the figure below. This capacitance is calculated using the following formula C ADJACNT = C + + + C 2 C C 4 Linear quivalent Circuit, Diode Chip R j = R S 8. X 0-5 nt I b + I s R j C j R S = series resistance (see Table of SPIC parameters) C j = junction capacitance (see Table of SPIC parameters) where I b = externally applied bias current in amps I s = saturation current (see table of SPIC parameters) T = temperature, K n = ideality factor (see table of SPIC parameters) Note: To effectively model the packaged HSMS-28x product, please refer to Application Note AN24. SPIC Parameters Parameter Units HSMS-28x B V V 25 C J0 pf. G ev 0.69 I BV A -5 I S A 4.8-9 N.08 R S Ω 0 P B V 0.65 P T 2 M 0.5
4 Typical Performance, T C = 25 C (unless otherwise noted), Single Diode I F FORWARD CURRNT (ma) 00 0 0. 0.0 T A = +25 C T A = +75 C T A = +25 C T A = 25 C 0 0. 0.2 0. 0.4 0.5 0.6 0.7 0.8 V F FORWARD VOLTAG (V) Figure. Forward Current vs. Forward Voltage at Temperatures. 00,000 I R RVRS CURRNT (na) 0,000 000 00 0 T A = +25 C T A = +75 C T A = +25 C 0 5 0 5 V R RVRS VOLTAG (V) Figure 2. Reverse Current vs. Reverse Voltage at Temperatures. R D DYNAMIC RSISTANC (Ω) 000 00 0 0. 0 00 I F FORWARD CURRNT (ma) Figure. Dynamic Resistance vs. Forward Current. C T CAPACITANC (pf).25 0.75 0.50 0.25 0 0 2 4 6 8 0 2 4 6 V R RVRS VOLTAG (V) Figure 4. Total Capacitance vs. Reverse Voltage. I F - FORWARD CURRNT (ma) 0 0 I F (Left Scale) V F (Right Scale) 0. 0. 0.2 0.4 0.6 0.8.0.2.4 V F - FORWARD VOLTAG (V) Figure 5. Typical V f Match, Pairs and Quads. 0 0 V F - FORWARD VOLTAG DIFFRNC (mv)
5 Applications Information Introduction Product Selection Agilent s family of Schottky products provides unique solutions to many design problems. The first step in choosing the right product is to select the diode type. All of the products in the HSMS-282x family use the same diode chip, and the same is true of the HSMS-28x and HSMS-280x families. ach family has a different set of characteristics which can be compared most easily by consulting the SPIC parameters in Table. A review of these data shows that the HSMS-280x family has the highest breakdown voltage, but at the expense of a high value of series resistance (Rs). In applications which do not require high voltage the HSMS-282x family, with a lower value of series resistance, will offer higher current carrying capacity and better performance. The HSMS- 28x family is a hybrid Schottky (as is the HSMS-280x), offering lower /f or flicker noise than the HSMS-282x family. In general, the HSMS-282x family should be the designer s first choice, with the -280x family reserved for high voltage applications and the HSMS-28x family for low flicker noise applications. Assembly Instructions SOT-2 PCB Footprint A recommended PCB pad layout for the miniature SOT-2 (SC-70) package is shown in Figure 6 (dimensions are in inches). This layout provides ample allowance for package placement by automated assembly equipment without adding parasitics that could impair the performance. 0.05 0.026 0.06 Figure 6. PCB Pad Layout (dimensions in inches). 0.07 Assembly Instructions SOT-6 PCB Footprint A recommended PCB pad layout for the miniature SOT-6 (SC-70, 6 lead) package is shown in Figure 7 (dimensions are in inches). This layout provides ample allowance for package placement by automated assembly equipment without adding parasitics that could impair the performance. 0.026 Table. Typical SPIC Parameters. Parameter Units HSMS-280x HSMS-28x HSMS-282x B V V 75 25 5 C J0 pf.6. 0.7 G ev 0.69 0.69 0.69 I BV A -5-5 -4 I S A -8 4.8-9 2.2-8 N.08.08.08 R S Ω 0 0 6.0 P B (V J ) V 0.65 0.65 0.65 P T (XTI) 2 2 2 M 0.5 0.5 0.5 0.05 0.06 Figure 7. PCB Pad Layout (dimensions in inches). 0.075
6 SMT Assembly Reliable assembly of surface mount components is a complex process that involves many material, process, and equipment factors, including: method of heating (e.g., IR or vapor phase reflow, wave soldering, etc.) circuit board material, conductor thickness and pattern, type of solder alloy, and the thermal conductivity and thermal mass of components. Components with a low mass, such as the SOT package, will reach solder reflow temperatures faster than those with a greater mass. Agilent s SOT diodes have been qualified to the time-temperature profile shown in Figure 8. This profile is representative of an IR reflow type of surface mount assembly process. After ramping up from room temperature, the circuit board with components attached to it (held in place with solder paste) passes through one or more preheat zones. The preheat zones increase the temperature of the board and components to prevent thermal shock and begin evaporating solvents from the solder paste. The reflow zone briefly elevates the temperature sufficiently to produce a reflow of the solder. The rates of change of temperature for the ramp-up and cooldown zones are chosen to be low enough to not cause deformation of the board or damage to components due to thermal shock. The maximum temperature in the reflow zone (TMAX) should not exceed 25 C. These parameters are typical for a surface mount assembly process for Agilent diodes. As a general guideline, the circuit board and components should be exposed only to the minimum temperatures and times necessary to achieve a uniform reflow of solder. 250 200 T MAX TMPRATUR ( C) 50 00 50 Preheat Zone Reflow Zone Cool Down Zone 0 0 60 20 80 240 00 TIM (seconds) Figure 8. Surface Mount Assembly Profile.
7 Part Number Ordering Information No. of Part Number Devices Container HSMS-28x-TR2* 0000 " Reel HSMS-28x-TR* 000 7" Reel HSMS-28x-BLK * 00 antistatic bag x = 0, 2,, 4, 5, 7, 8, B, C,, F, K, L Package Dimensions Outline 2 (SOT-2) Outline SOT-2 (SC-70 Lead).02 (0.040) 0.89 (0.05).0 (0.04) 0.89 (0.05) * 0.54 (0.02) 0.7 (0.05) DAT COD (X) PACKAG MARKING COD (XX).0 (0.05) RF. DAT COD (X) PACKAG MARKING COD (XX) X X X.40 (0.055).20 (0.047) 2.65 (0.04) 2.0 (0.08) 2.20 (0.087) 2.00 (0.079) X X X.5 (0.05).5 (0.045) 0.60 (0.024) 0.45 (0.08) 2.04 (0.080).78 (0.070) 2.05 (0.080).78 (0.070) * TOP VIW.06 (0.20) 2.80 (0.0).04 (0.04) 0.85 (0.0) * 0.80 (0.007) 0.085 (0.00) 0.52 (0.006) 0.086 (0.00) 0.00 (0.00) 0.25 (0.00) 0.5 (0.006) 2.20 (0.087).80 (0.07) 0.650 BSC (0.025).00 (0.09) 0.80 (0.0) 0.0 RF. 0 0.0 (0.02) 0.425 (0.07) TYP. 0.20 (0.008) * 0.0 (0.0005) SID VIW 0.69 (0.027) 0.45 (0.08) THS DIMNSIONS FOR HSMS-280X AND -28X FAMILIS ONLY. DIMNSIONS AR IN MILLIMTRS (INCHS) ND VIW DIMNSIONS AR IN MILLIMTRS (INCHS) Outline 4 (SOT-4) Outline SOT-6 (SC-70 6 Lead) PACKAG MARKING COD (XX) X X X C 0.92 (0.06) 0.78 (0.0) DAT COD (X).40 (0.055).20 (0.047) 2.65 (0.04) 2.0 (0.08) PACKAG MARKING COD (XX) 2.20 (0.087) 2.00 (0.079).0 (0.05) RF. X X X.5 (0.05).5 (0.045) DAT COD (X) B 0.60 (0.024) 0.45 (0.08) 2.04 (0.080).78 (0.070) 0.54 (0.02) 0.7 (0.05) 2.20 (0.087).80 (0.07) 0.650 BSC (0.025) 0.425 (0.07) TYP..06 (0.20) 2.80 (0.0) 0.5 (0.006) 0.09 (0.00) 0.00 (0.00) 0.0 RF..04 (0.04) 0.85 (0.0) 0.0 (0.0005) DIMNSIONS AR IN MILLIMTRS (INCHS) 0.69 (0.027) 0.45 (0.08) 0.25 (0.00) 0.5 (0.006).00 (0.09) 0.80 (0.0) 0 0.0 (0.02) 0.20 (0.008) DIMNSIONS AR IN MILLIMTRS (INCHS)
Tape Dimensions and Product Orientation For Outline SOT-2 (SC-70 Lead) P D P 2 P 0 C F W t (CARRIR TAP THICKNSS) D T t (COVR TAP THICKNSS) 8 MAX. K 0 5 MAX. A 0 B 0 CAVITY PRFORATION DSCRIPTION SYMBOL SIZ (mm) SIZ (INCHS) LNGTH WIDTH DPTH PITCH BOTTOM HOL DIAMTR DIAMTR PITCH POSITION A 0 B 0 K 0 P D D P 0 2.24 ± 0.0 2.4 ± 0.0.22 ± 0.0 4.00 ± 0.0.00 + 0.25.55 ± 0.05 4.00 ± 0.0.75 ± 0.0 0.088 ± 0.004 0.092 ± 0.004 0.048 ± 0.004 0.57 ± 0.004 0.09 + 0.00 0.06 ± 0.002 0.57 ± 0.004 0.069 ± 0.004 CARRIR TAP WIDTH THICKNSS W t 8.00 ± 0.0 0.255 ± 0.0 0.5 ± 0.02 0.00 ± 0.0005 COVR TAP WIDTH TAP THICKNSS C 5.4 ± 0.0 T t 0.062 ± 0.00 0.205 ± 0.004 0.0025 ± 0.00004 DISTANC CAVITY TO PRFORATION (WIDTH DIRCTION) CAVITY TO PRFORATION (LNGTH DIRCTION) F P 2.50 ± 0.05 2.00 ± 0.05 0.8 ± 0.002 0.079 ± 0.002 www.semiconductor.agilent.com Data subject to change. Copyright 999 Agilent Technologies Obsoletes 5968-256, 5968-594 5968-7649 (/99)