Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz 3 Pbfree (RoHS compliant) and halogenfree package with visible leads Qualification report according to AECQ available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR8W RGs =B =E 3=C SOT33 Maximum Ratings at T A = 5 C, unless otherwise specified Parameter Symbol Value Unit Collectoremitter voltage V CEO V Collectoremitter voltage V CES 0 Collectorbase voltage V CBO 0 Emitterbase voltage V EBO Collector current I C 35 ma Base current I B 4 Total power dissipation ) T S 90 C P tot 50 mw Junction temperature T J 50 C Ambient temperature T A 65... 50 Storage temperature T Stg 65... 50 Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 40 K/W T S is measured on the collector lead at the soldering point to the pcb For the definition of R thjs please refer to Application Note AN077 (Thermal Resistance Calculation) 040407
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage I C = ma, I B = 0 V (BR)CEO V Collectoremitter cutoff current V CE = 4 V, V BE = 0 V CE = 5 V, V BE = 0 V, T A = 85 C (verified by random sampling) Collectorbase cutoff current V CB = 4 V, I E = 0 Emitterbase cutoff current V EB = V, I C = 0 DC current gain I C = ma, V CE = 8 V, pulse measured I CES na 5 30 70 I CBO 30 I EBO 50 h FE 70 0 40 040407
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T 6 8 GHz I C = 5 ma, V CE = 8 V, f = 500 MHz Collectorbase capacitance V CB = V, f = MHz, V BE = 0, emitter grounded C cb 0.34 0.5 pf Collector emitter capacitance V CE = V, f = MHz, V BE = 0, base grounded Emitterbase capacitance V EB = 0.5 V, f = MHz, V CB = 0, collector grounded Minimum noise figure I C = 3 ma, V CE = 8 V, Z S = Z Sopt, f = 900 MHz I C = 3 ma, V CE = 8 V, Z S = Z Sopt, f =.8 GHz C ce 0.6 C eb 0.8 NF min 0.9.3 db Power gain, maximum stable ) I C = ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 900 MHz Power gain, maximum available ) I C = ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f =.8 GHz Transducer gain I C = ma, V CE = 8 V, Z S = Z L = 50 Ω, f = 900 MHz I C = ma, V CE = 8 V, Z S = Z L = 50 Ω, f =.8 GHz G ms 9 db G ma.5 db S e db 5.5 G ms = S / S G ma = S e / S e (k(k²) / ) 3 040407
Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) 300 3 mw K/W Ptot 00 RthJS 50 0 50 0.5 0. 0. 0.05 0.0 0.0 0.005 D = 0 0 0 0 40 60 80 0 0 C 50 T S 7 6 5 4 3 s 0 t p Permissible Pulse Load P totmax /P totdc = ƒ(t p ) Ptotmax/PtotDC D = 0 0.005 0.0 0.0 0.05 0. 0. 0.5 0 7 6 5 4 3 s 0 t p 4 040407
Package SOT33 BFR8W 5 040407
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