Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. Gen-III 2-65 SiC Schottky Diode UJ3D652TS. CSE CSE 1 2 1 2 Features Typical pplications maximum operating junction temperature Power converters Easy paralleling Industrial motor drives Extremely fast switching not dependent on temperature Switching-mode power supplies No reverse or forward recovery Power factor correction modules Enhanced surge current capability, MPS structure Excellent thermal performance, g sintered 1% UIS tested EC-Q11 qualified Maximum Ratings Part Number Package Marking UJ3D652TS TO-22-2L UJ3D652TS Repetitive forward surge current sine halfwave, D=.1 Non-repetitive peak forward current i 2 t value Power dissipation Parameter DC blocking voltage Repetitive peak reverse voltage, T j = Surge peak reverse voltage Maximum DC forward current Non-repetitive forward surge current sine halfwave Maximum junction temperature Operating and storage temperature Soldering temperatures, wavesoldering only allowed at leads Symbol Test Conditions alue R RRM RSM I F I FSM I FRM I F,max 65 65 65 T C = 152 2 T C =, t p = 1ms 126 T C = 11, t p =1ms 18 T C =, t p = 1ms 83 T C = 11, t p =1ms 52 T C =, t p =1ms 82 T C = 11, t p =1ms 82 T 79.4 i 2 C =, t p =1ms dt T C = 11, t p =1ms 58.3 T C = 272.7 P Tot T C = 152 41.8 T J,max 175 T J, T STG -55 to 175 T sold 1.6mm from case for 1s 26 2 s W Rev.B, pril 218 1 For more information go to www.unitedsic.com.
Forward Current, I F () Forward Current, I F () Electrical Characteristics Gen-III 2-65 SiC Schottky Diode UJ3D652TS. T J = + unless otherwise specified Forward voltage Reverse current Total capacitive charge (1) Total capacitance Capacitance stored energy Min Typ Max - 1.5 1.7-1.68 2. - 1.75 2.1-2 12-3 Q C R =4 46 nc C R =1, f=1mhz R =3, f=1mhz R =6, f=1mhz 654 76 68 pf E C R =4 6.8 mj (1) Q c is independent on T j, di F /dt, and I F as shown in the application note USCi_N11. Thermal characteristics Parameter Symbol Test Conditions F I R I F = 2, T J = I F = 2, T J =15 I F = 2, T J = R =65, T j = R =65, T J = alue m Parameter Thermal resistance, junction - case alue symbol Test Conditions Min Typ Max R qjc.41.55 /W Typical Performance 4 3 2-55 1 15 14 12 1 8 6-55 1 15 1 4 2.5 1 1.5 2 2.5 3 Forward oltage, F () 1 2 3 4 5 6 Forward oltage, F () Figure 1 Typical forward characteristics Figure 2 Typical forward characteristics in surge current Rev.B, pril 218 2 For more information go to www.unitedsic.com.
Forward Current,I F () Max. Thermal Impedance, Z qjc (/W) Reverse Current, I R () Power Disspiation, P Tot (W) Gen-III 2-65 SiC Schottky Diode UJ3D652TS. 1-3 1.E-3 32 1-4 1.E-4-55 1 28 24 2 1-5 1.E-5 16 12 1-6 1.E-6 8 4 1-7 1.E-7 2 25 3 35 4 45 5 55 6 65 25 5 75 1 125 15 175 T C () Figure 3 Typical reverse characteristics Figure 4 Power dissipation 24 2 16 D =.1 D =.3 D =.5 D =.7 D = 1. 1 12 8 4.1 D =.5 D =.3 D =.1 D =.5 D =.2 Single Pulse 25 5 75 1 125 15 175 T C ().1 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 Time, t (s) Figure 5 Diode forward current Figure 6 Maximum transient thermal impedance Rev.B, pril 218 3 For more information go to www.unitedsic.com.
E C (mj) Capacitance, C (pf) Q C (nc) Gen-III 2-65 SiC Schottky Diode UJ3D652TS. 1 7 9 8 6 7 5 6 5 4 4 3 3 2 1 2 1 Q C = R C d.1 1 1 1 1 1 2 3 4 5 6 7 Figure 7 Capacitance vs. reverse voltage at 1MHz Figure 8 Typical capacitive charge vs. reverse voltage 18 16 14 12 1 8 6 4 2 1 2 3 4 5 6 7 Figure 9 Typical capacitance stored energy vs. reverse voltage Rev.B, pril 218 4 For more information go to www.unitedsic.com.
Gen-III 2-65 SiC Schottky Diode UJ3D652TS. Disclaimer United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. Rev.B, pril 218 5 For more information go to www.unitedsic.com.