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haracteristics of Active Devices Review of MOSFET Physics MOS ircuit Applications Review of JT Physics MOS Noise JT Noise
MS/RF Technology Roadmap MS MOS 1., 1.0, 0.8µm 0.60, 0.50µm 0.45, 0.35µm 0.5, 0.18µm M013 1.V/.5V MN90 (1 ) 1.0V/.5V RF MOS M05.5V/3.3V M018 1.8V/3.3V M013 1.V/.5V MN90 (1 ) 1.0V/.5V SiGe imos SG035 3.3V SG018 1.8/3.3V Available Technologies 003 004 005 Left edge of each box represents risk production schedule MiM is offered for M05 and below and SiGe technologies. 3
Technology Landscape 00 40G SiGe imos 10G Si imos F t (GHz) 100 80 60 DMA WLAN Si MOS 40 GSM 0 0.5.35.5.18.15.13.1 Technology (µm) 4
ross Section View 5
Review of MOSFET Physics ross Section View & Layout Process masks N-Well, Active region, Poly gate, P/N implant D S G Substrate Well ontact S G D ontact S G D N Poly P N N N P Poly P P N Well Metal 1 ontact Silicided Poly Unsilicided Poly Field Oxide Nwell Substrate 6
Review of MOSFET Physics MOS Operation Regions: ut-off region V <, = 0 GS V T Linear (triode) region V GS > V Saturation region D Subthreshold region T W V DS, VDS < VGS V T D = µ n; pox ( VGS VT ) VDS L 1 W VGS > VT, VDS > VGS VT ( ) D = µ n; pox VGS VT L Overdrive voltage: V V V OV hannel - length modulation : T T GS D T ( 1 ) 0 = λv DS ( Φ V Φ ) ody effect : V = V 0 γ F S F D 7
Review of MOSFET Physics VDS = ( VGS VT ) D Triode region Short - channel effects Active region ncreasing V GS V GS > V T ut - off region V DS 8
Review of MOSFET Physics MOS parasitic capacitances: G S D L D L D ov ov P N N cb P-substrate jsb gc x l jdb x d 9
10 Review of MOSFET Physics Parasitic capacitance vs. Dimension ) ( D ox gc L L W = j ox D ox ox ov x W WL t 7 0. = ε ) ( Si D d cb L L W x ε d l l jdb x x W x W ) ( jdb cb jdb jdb db cb jsb cb jsb jsb sb gc gb cb gc cb gc gb ov ov gc ov gd ov gc ov gc ov gs 3 0 0 3 Saturation Triode - off ut < <
Review of MOSFET Physics MOS small signal model G G gd D R ds R g ds S gs gmv gs ro g mb v bs S R s Dsb Rsb Rdb Ddb R d D sb db R b Low frequency model RF model 11
Review of MOSFET Physics Unit current gain frequency, ω T : in D Unit power gain frequency, ω max : in Z in Z in Z out Z out gnore ω T R d and R gd gm n saturation gnore and i gd R d, gs s : g m gs region R s, forward R ds, R db, current, ( ) Z r 1 jω Z gd gs ( ) jω L R b, etc.: in g gd gs ωt ω 1 gm 1 max gd rg gd out ncreasing g m gs r o, ω T W L VOV W L ω T V OV L : 1
Review of MOSFET Physics NMOS in Deep N-Well No body effect Need extra mask and process procedure Large area V DD Substrate ontact S G D V DD N Poly N-well P N N N-well Deep N-Well Metal 1 ontact Silicided Poly Unsilicided Poly Field Oxide Nwell Substrate 13
MOS ircuit Applications 14
MOS ircuit Applications 15
MOS ircuit Applications 16
Review of JT Physics Vertical NPN JT E E E E E P Poly N Poly N-Epi N N N-uried Layerl Metal 1 ontact P Poly NL Field Oxide Nwell Substrate 17
Review of JT Physics Lateral JT PNP NPN E E P N P N N P N P N N-well N-well N-well Deep N-Well Metal 1 ontact P implant NL Field Oxide Nwell Substrate 18
E.g. SiGe Lateral PNP JT Review of JT Physics P SiGe P type SiGe SiGe P DT N Deep N-Well N DT 19
JT Operation Regions Use NPN as an example: ut-off region < V E 0, = 0 Activeregion Review of JT Physics VE > 0, V > 0, = β = S exp q Transconductance g m = = kt VT Early effect = exp qv kt 1 V Saturation region V E > 0, V < 0, < β S ( qv kt ) E ( ) ( V ) E E A 0
Review of JT Physics reakdown region Saturation region Active region ncreasing V E V E > V E _ ON V A ut - off region V E 1
JT small signal model Review of JT Physics r µ r b r π π µ v π g m ro r c S r e E NPN model S
Review of JT Physics Unit current gain frequency, ω T : in D Unit power gain frequency, ω max : η kt x x dep ωt = ( je jc ) ( RE R ) jc q ν Dn ν sat Z out τ = 1 T τ e τ b τ π τ c π f = ω max T ωt 8π r b jc RE R r bi i R 1 in Z in Z in Z out i E Emitter ase ollecter x x dep i 3
4 Review of JT Physics 50 50 50 (nm) 50 50 50 ) m ( 60 (nm) 5.0 0.5 0.5 ) m (ff/ 0.5 0.5 0.5 ) m (ff/ 40 30 5 60 40 (nm) Assumptions : 53 4 88 64 106 94 (GHz) 3.8 3.0.5 1.8 1.7 1.5 0.35 0.35 0.1 0.1 / ) ( 0.15 0.15 0.15 1.3 1.3 1.0 1.6 0.8 0.9 0.5 0.45 0. Si SiGe GaAs total SL JE E T E E t E X R X W f V R µ µ µ τ τ τ τ Ω in ps. are constants time All is is (GaAs,SiGe) to is (Si) 4 to is sat sat p JE E SL n n n D X V X V W D W D W D W τ τ τ τ f T of GanP/GaAs HT, SiGe HT and Si JT
Review of JT Physics Scaling of Si/SiGe HTs with ase Thickness f T is dramatically affected by decreasing base width. f max is relatively unaffected by decreasing W. Koenig, 1996 5
Review of JT Physics Si vs. SiGe 6
Review of JT Physics Process Scaling Vertical scaling Lateral scaling Single poly E E N N Nwell P N N Single poly self-aligned N-uried Layerl E P Poly N Poly N-Epi N N Double poly N-uried Layerl 7
Review of JT Physics Similarity between JT and MOS process 8
Review of JT Physics Evolution of imos process 9
Noise Noise: Any random interference unrelated to the wanted signal Statistic results (Mean square) v n = v n Total power = (individual noise power) v n,1 v n,1 R L vn, RL Uncorrelated v n, R L P n, 1 = v n,1 R L P v n, n, = P n, 1 = Pn,1 Pn, RL 30
Noise Device Noises V n = 4kTR f n = 4kT gm, q, 3 n = Figure.6 (a) Thermal and (b) shot noise in devices. White noise source Pnoise flicker noise olored noise source P noise f (in Hz) V K WL 1 f, n = ox f (in Hz) 31
MOS Noise 3
MOS Noise 33
MOS Noise 34
MOS Noise 35
MOS Noise 36
JT Noise 37
JT Noise 38
JT Noise 39
JT Noise 40
41 Latch-up Semiconductor active devices have many parasitic structures, with excessive current flows between the power supply and GND. P1 P P N1 N1 N E E 1 = 1 = ( 1 ) α ( ) α 1 1 1 1 1 1 1 1 1 ) (1 ) ( O O E E E = = = α α O O E = = α α 1 ) when (, ) ( 1 ) (1 1 1 1 1 1 1 = = = = = α α α α α α O O O O urrent relation
Latch-up condition Latch-up 1. pnpn structure. connection from VDD to GND 3. α 1 α = 1 Latch-up Prevention Epitaxial Substrate Retrograde Well Deep Trench solation SO Guard Rings 4