NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collectoremitter saturation voltage Complementary type: BCX69 (PNP) Pbfree (RoHS compliant) package ) Qualified according AEC Q Type Marking Pin Configuration Package BCX68 BCX686 BCX68 CB CC CD =B =B =B =C =C =C =E =E =E SOT89 SOT89 SOT89 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO V Collectorbase voltage V CBO Emitterbase voltage V EBO Collector current I C A Peak collector current, t p ms I CM Base current I B ma Peak base current I BM Total power dissipation P tot W T S 4 C Junction temperature T j C Storage temperature T stg 6... Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs K/W Pbcontaining package may be available upon special request For calculation of R thja please refer to Application Note Thermal Resistance 8
Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage I C = ma, I B = V (BR)CEO V Collectorbase breakdown voltage I C = µa, I E = Emitterbase breakdown voltage I E = µa, I C = Collectorbase cutoff current V CB = V, I E = V CB = V, I E =, T A = C DC current gain ) I C = ma, V CE = V I C = ma, V CE = V, BCX68 I C = ma, V CE = V, BCX686 I C = ma, V CE = V, BCX68 I C = A, V CE = V V (BR)CBO V (BR)EBO I CBO h FE 8 6 6 6. 6 7 µa Collectoremitter saturation voltage ) I C = A, I B = ma Baseemitter voltage ) I C = ma, V CE = V I C = A, V CE = V AC Characteristics Transition frequency I C = ma, V CE = V, f = MHz V CEsat. V V BE(ON).6 f T MHz Pulse test: t < µs; D < % 8
DC current gain h FE = ƒ(i C ) V CE = V Collectoremitter saturation voltage I C = ƒ(v CEsat ), h FE = BCX 68 EHP464 4 BCX 68 EHP46 ma h FE C C C C C C ma 4 Baseemitter saturation voltage I C = ƒ(v BEsat ), h FE =..4.6 V.8 Collector current I C = ƒ(v BE ) V CE = V V CE sat ma 4 BCX 68 EHP467 ma 4 BCX 68 EHP46 C C C C C C..4.6.8. V. V BE sat..4.6.8. V. V BE 8
Collector cutoff current I CBO = ƒ(t A ) V CB = V Transition frequency f T = ƒ(i C ) V CE = V na BCX 68 EHP466 MHz BCX 68 EHP46 B 4 max f T typ C Total power dissipation P tot = ƒ(t S ) T A ma Permissible Pulse Load R thjs = ƒ(t p ). W Ptot. RthJS.. D =,,,,,,, 4 6 7 9 C t s 6 4 s t p 4 8
Permissible Pulse Load P totmax /P totdc = ƒ(t p ) Ptotmax/PtotDC D =....... 6 4 s t p 8
Package SOT89 BCX68... Package Outline. ±. 4. ±. 4 B. ±.. MAX. ).6 ±. ) ±.. ±. 4 ±.. ±. MAX. +...7..4 +... M. B B x. ±. ) Ejector pin markings possible Foot Print.....8.8.7 Marking Layout (Example) BAW78D Type code Pin, June Date code (YM) Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm = 4. Pieces/Reel Manufacturer 8. 4.6 Pin 4..6 6 8
Edition 6 Published by Infineon Technologies AG 876 München, Germany Infineon Technologies AG 7. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 8