NPN Silicon RF Transistor* For lowdistortion broadband output amplifier stages in antenna and telecommunication systems up to GHz at collector currents from 70 ma to 30 ma Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor f T = 6 GHz Pbfree (RoHS compliant) package ) Qualified according AEC Q * Short term description 4 3 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFG35A BFG35A=E =B 3=E 4=C SOT3 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO 5 V Collectoremitter voltage V CES 5 Collectorbase voltage V CBO 5 Emitterbase voltage V EBO Collector current I C 50 ma Base current I B 0 Total power dissipation ) T S 0 C P tot W Junction temperature T j 50 C Ambient temperature T A 65... 50 Storage temperature T stg 65... 50 Pbcontaining package may be available upon special request T S is measured on the collector lead at the soldering point to the pcb 007039
Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 50 K/W Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO 5 V I C = ma, I B = 0 Collectoremitter cutoff current I CES 0 µa V CE = 5 V, V BE = 0 Collectorbase cutoff current I CBO 50 na V CB = V, I E = 0 Emitterbase cutoff current I EBO µa V EB = V, I C = 0 DC current gain I C = 0 ma, V CE = 8 V, pulse measured h FE 80 0 60 For calculation of R thja please refer to Application Note Thermal Resistance 007039
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T 4.5 6 GHz I C = 0 ma, V CE = 8 V, f = 00 MHz Collectorbase capacitance V CB = V, f = MHz, V BE = 0, emitter grounded C cb..5 pf Collector emitter capacitance V CE = V, f = MHz, V BE = 0, base grounded Emitterbase capacitance V EB = 0.5 V, f = MHz, V CB = 0, collector grounded Noise figure I C = 30 ma, V CE = 8 V, Z S = Z Sopt, f = 900 MHz f =.8 GHz C ce 0.8 C eb 7 F.5.6 db Power gain, maximum available ) G ma I C = 0 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 900 MHz 4 f =.8 GHz 9 Transducer gain S e db I C = 0 ma, V CE = 8 V, Z S = Z L = 50Ω, f = 900 MHz.5 f =.8 GHz 4.5 Third order intercept point at output V CE = 8 V, I C = 0 ma, f = 900 MHz, Z S = Z L = 50Ω IP 3 33 dbm G ma = S /S (k(k ) / ) 007039 3
Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) 00 mw 00 900 K/W Ptot 800 700 600 500 400 300 00 0 RthJS 0.5 0. 0. 0.05 0.0 0.0 0.005 D = 0 0 0 0 40 60 80 0 0 C 50 T S 0 7 6 5 4 3 s 0 t p Permissible Pulse Load P totmax /P totdc = ƒ(t p ) Ptotmax/PtotDC D = 0 0.005 0.0 0.0 0.05 0. 0. 0.5 0 7 6 5 4 3 s 0 t p 007039 4
Package SOT3 BFG35A Package Outline A 6.5 ±0. 3 ±0. 0. MAX..6±0. 4 7±0.3 5 MAX. 3.5 ±0. B 3 Foot Print 0.7 ±0. 0.5 M A 4.6.3 3.5 0.5 MIN. 0.5 M 0.8 0... B ±0.04.4 4.8.4 Marking Layout (Example).. Manufacturer 005, 4 CW Date code (YYWW) BCP56 Type code Pin Packing Reel ø80 mm =.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 8 0.3 MAX. 7.55 Pin 6.8.75 007039 5
Edition 00600 Published by Infineon Technologies AG 876 München, Germany Infineon Technologies AG 007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 007039