NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from 0.5 ma to ma f T = 8 GHz, F = 0.9 db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according AEC Q * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR8 RFs =B =E =C SOT Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO V Collectoremitter voltage V CES 0 Collectorbase voltage V CBO 0 Emitterbase voltage V EBO Collector current I C 0 ma Base current I B Total power dissipation ) T S 9 C P tot 75 mw Junction temperature T j 50 C Ambient temperature T A 65... 50 Storage temperature T stg 65... 50 Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 5 K/W Pbcontaining package may be available upon special request T S is measured on the collector lead at the soldering point to the pcb For calculation of R thja please refer to Application Note Thermal Resistance
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO V I C = ma, I B = 0 Collectoremitter cutoff current I CES 0 µa V CE = 0 V, V BE = 0 Collectorbase cutoff current I CBO 0 na V CB = V, I E = 0 Emitterbase cutoff current I EBO µa V EB = V, I C = 0 DC current gain I C = 5 ma, V CE = 8 V, pulse measured h FE 70 0 40
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T 6 8 GHz I C = ma, V CE = 8 V, f = 500 MHz Collectorbase capacitance V CB = V, f = MHz, V BE = 0, emitter grounded C cb 0.7 0.45 pf Collector emitter capacitance V CE = V, f = MHz, V BE = 0, base grounded Emitterbase capacitance V EB = 0.5 V, f = MHz, V CB = 0, collector grounded Noise figure I C = ma, V CE = 8 V, Z S = Z Sopt, f = 900 MHz I C = ma, V CE = 8 V, Z S = Z Sopt, f =.8 GHz C ce 0. C eb 0.5 F 0.9. db Power gain, maximum stable ) I C = ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 900 MHz Power gain, maximum available ) I C = 5 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f =.8 GHz Transducer gain I C = 5 ma, V CE = 8 V, Z S = Z L = 50 Ω, f = 900 MHz I C = 5 ma, V CE = 8 V, Z S = Z L = 50 Ω, f =.8 MHz G ms 8.5 db G ma.5 db S e db 4.5 9.5 G ms = S / S G ma = S e / S e (k(k²) / )
SPICE Parameter (GummelPoon Model, BerkleySPICE G.6 Syntax): Transistor Chip Data: IS = 0.0059 fa VAF =.40 V NE =.76 VAR = 5.7 V NC =.658 RBM = 6.65 Ω CJE =.868 ff TF = 7.08 ps ITF =.0549 ma VJC =.6 V TR =.7449 ns MJS = 0 XTI = BF = 96.46 IKF = 0.46 A BR = 6.504 IKR = 0.495 A RB = 9.907 Ω RE =.7 VJE = 0.755 V XTF = 0.84 PTF = 0 deg MJC = 0.00 CJS = 0 ff XTB = 0 FC = 0.99768 NF = 0.9067 ISE =.60 fa NR = 0.87757 ISC = 0.095 fa IRB = 0.6978 ma RC =.7 Ω MJE = 0.469 VTF = 0.57 V CJC = 9.69 ff XCJC = 0.0890 VJS = 0.75 V EG =. ev TNOM 00 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil und Satellitentechnik (IMST) Package Equivalent Circuit: B L C 4 C B Transistor C Chip E L C L BI = 0.85 nh L BO = 0.5 nh L EI = 0.69 nh L EO = 0.6 nh L CI = 0 nh L CO = 0.49 nh C BE = 7 ff C CB = 84 ff C CE = 65 ff C 6 C C L C 5 Valid up to 6GHz E EHA0754 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CDROM or see Internet: http://www.infineon.com 4
Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) 00 mw 60 K/W Ptot 40 0 RthJS 0 80 60 40 0 0.5 0. 0. 0.05 0.0 0.0 0.005 D = 0 0 0 0 40 60 80 0 0 C 50 T S 7 6 5 4 s 0 t p Permissible Pulse Load P totmax /P totdc = ƒ(t p ) Ptotmax/PtotDC D = 0 0.005 0.0 0.0 0.05 0. 0. 0.5 0 7 6 5 4 s 0 t p 5
Package SOT BFR8 Package Outline +0. ) 0.4 0.05.9 ±0..9 B C 0.95.4 ±0.5 0.5 MIN. MAX. ±0. 0. MAX. 0...8 MAX. 0.08...0.5. ±0. A 0.5 M BC 0. M A Foot Print ) Lead width can be 0.6 max. in dambar area 0.8 0.8. 0.9. 0.9 Marking Layout (Example) EH s Manufacturer 005, June Date code (YM) Pin BCW66 Type code Standard Packing Reel ø80 mm =.000 Pieces/Reel Reel ø0 mm =.000 Pieces/Reel 4 0.9 0. 8..65 Pin.5.5 6
Edition 00600 Published by Infineon Technologies AG 876 München, Germany Infineon Technologies AG 007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7