single, leadless single single

Similar documents
single, leadless single Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R

BAR64... BAR64-05 BAR64-05W BAR64-04 BAR64-04W BAR64-02LRH BAR64-02V BAR64-03W BAR64-06 BAR64-06W BAR64-07

single single single 150 C Operating temperature range T op Storage temperature T stg

I FSM P tot 500 mw. 150 C Storage temperature T stg

BAV BAV Total power dissipation T S 35 C. t = 1 s. t = 1 µs. P tot 250 mw

single single single yellow S HH H Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R

Type Package Configuration Marking BAS28 BAS28W

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

single common cathode common cathode

single single single yellow S HH H Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R

BAT64-04W. ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking

BAW56 BAW56S BAW56T BAW56U BAW56W

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

BC BC Pb-containing package may be available upon special request

Type Marking Pin Configuration Package BC BC807-16W BC BC807-25W BC BC807-40W BC BC808-25W BC808-40

Type Marking Pin Configuration Package BFN38 BFN38 1=B 2=C 3=E 4=C - - SOT223

Type Marking Pin Configuration Package BCX68-10 BCX68-16 BCX =B 1=B 1=B

Type Marking Pin Configuration Package BCP68-25 * 1=B 2=C 3=E 4=C - - SOT223

SMBT MMBT3906 SMBT3906S/U. Type Marking Pin Configuration Package SMBT3906S SMBT3906U

BC BC Pb-containing package may be available upon special request

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF998 BF998R 2=D 2=S 3=G2 3=G1

Type Marking Pin Configuration Package BFN27 FLs 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package SMBT2907A/MMBT2907A s2f 1 = B 2 = E 3 = C SOT23

Type Marking Pin Configuration Package BSP60 BSP61 BSP62 2=C 2=C 2=C 3=E 3=E 3=E

Type Marking Pin Configuration Package BFR93A R2s 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BFN24 BFN26 1=B 1=B

2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E

Type Marking Pin Configuration Package BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* 1=B 1=B 1=B 1=B 1=B 1=B

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

BDP947_BDP949_BDP953. Silicon NPN Transistors. For AF driver and output stages High collector current High current gain

Type Marking Pin Configuration Package SMBTA06/MMBTA06 s1g 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO

Type Marking Pin Configuration Package BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

C1 B2 E2 TR2 TR1 EHA Type Marking Pin Configuration Package BC817UPN 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74

BCP51...-BCP53... Type Marking Pin Configuration Package BCP51 BCP51-16 BCP52-16 BCP53-10 BCP SOT223 SOT223 SOT223 SOT223 SOT223

Type Marking Pin Configuration Package BCM856S 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

BCW60, BCX70. NPN Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage

BFP193. NPN Silicon RF Transistor* For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, F = 1 db at 900 MHz

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR183W RHs 1=B 2=E 3=C SOT323

Type Marking Pin Configuration Package BFR183 RHs 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BCW66KF BCW66KG BCW66KH 1=B 1=B 1=B

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR181 RFs 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package SMBT2222A/MMBT2222A s1p 1 = B 2 = E 3 = C SOT23

BFS483. Low Noise Silicon Bipolar RF Transistor

Type Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323

Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) Type Marking Pin Configuration Package BCV62A BCV62B BCV62C 2 = C1 2 = C1 2 = C1

BCW61..., BCX71... PNP Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

BCR420U / BCR421U. LED Driver

BCR320U / BCR321U. LED Driver

Type Marking Pin Configuration Package BFQ19S FG 1 = B 2 = C 3 = E SOT89

IDP30E120. Fast Switching Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C

BFP196W. NPN Silicon RF Transistor*

C1 (2) C2 (1) E1 (3) E2 (4) Type Marking Pin Configuration Package BCV61B BCV61C 2 = C1 2 = C1 1 = C2 1 = C2

Product Summary V RRM 600 V I F 23 A V F 1.5 V T jmax 175 C 600V diode technology

IGW25T120. TrenchStop Series

SIPMOS Small-Signal-Transistor

OptiMOS -P Small-Signal-Transistor

IDP45E60. Fast Switching Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C. Features 600V Emitter Controlled technology

IGW15T120. TrenchStop Series

PG-TO I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62

2 nd Generation thinq! TM SiC Schottky Diode

2 nd Generation thinq! TM SiC Schottky Diode

SIPMOS Small-Signal-Transistor

3 rd Generation thinq! TM SiC Schottky Diode

2 nd Generation thinq! TM SiC Schottky Diode

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 40 Turn off safe operating area V CE 600V, T j 150 C - 40.

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62.

Rev Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.

3 rd Generation thinq! TM SiC Schottky Diode

BFS469L6. World's smallest SMD 6-pin leadless package Built in 2 transitors (TR1: die as BFR460L3, TR2: die as BFR949L3)

OptiMOS Small-Signal-Transistor

Type Marking Pin Configuration Package BGA427 BMs 1, IN 2, GND 3, +V 4, Out SOT343. Maximum Ratings Parameter Symbol Value Unit Device current I D

SIPMOS Small-Signal-Transistor

2 nd Generation thinq! TM SiC Schottky Diode

TrenchStop Series. P t o t 270 W

Soft Switching Series I C I F I FSM

SGB02N120. Fast IGBT in NPT-technology. Power Semiconductors 1 Rev. 2_3 Jan 07

IGP03N120H2 IGW03N120H2

Soft Switching Series

I C P tot 138 W

SGP20N60 SGW20N60. Fast IGBT in NPT-technology

60 30 Pulsed collector current, t p limited by T jmax I Cpuls 90 Turn off safe operating area V CE 900V, T j 175 C - 90 Diode forward current

OptiMOS 2 Small-Signal-Transistor

OptiMOS 2 + OptiMOS -P 2 Small Signal Transistor

OptiMOS -P2 Power-Transistor

OptiMOS 2 Power-Transistor

OptiMOS Small-Signal-Transistor

OptiMOS 2 Small-Signal-Transistor

OptiMOS 3 Power-MOSFET

BFP193. NPN Silicon RF Transistor*

Silicon Carbide Schottky Diode IDH05G120C5. 5 th Generation thinq! 1200 V SiC Schottky Diode. Rev

Type Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E

OptiMOS P2 Small-Signal-Transistor

Silicon Carbide Schottky Diode IDM05G120C5. 5 th Generation thinq! 1200 V SiC Schottky Diode. Rev

SIPMOS Small-Signal-Transistor

OptiMOS TM Power-Transistor

SIPMOS Small-Signal-Transistor

Transcription:

Silicon PIN Diode Series diode for mobile communication in low loss transmitreceiver switches Band switch for TVtuners Very low forward resistance (typ..65 Ω @ 5 ma) Low capacitance (typ..5 pf @ V) Fast switching applications Pbfree (RoHS compliant) package ) Qualified according AEC Q BAR65L BAR65V BAR653W Type Package Configuration L S (nh) Marking BAR65L* BAR65V BAR653W * Preliminary Data TSLP SC79 SOD33 single, leadless single single.4.6.8 NN N M/blue Maximum Ratings at T A = 5 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R 3 V Forward current I F ma Total power dissipation BAR65L, T S 8 C BAR65V, T S 8 C BAR653W, T S 3 C P tot 5 5 5 mw Junction temperature T j 5 C Operating temperature range T op 55... 5 Storage temperature T stg 55... 5 Pbcontaining package may be available upon special request 749

Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) BAR65L BAR65V BAR653W R thjs K/W 9 3 45 Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I R na V R = V Forward voltage I F = ma V F.93 V For calculation of R thja please refer to Application Note Thermal Resistance 749

Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Diode capacitance V R = V, f = MHz V R = 3 V, f = MHz V R = V, f = MHz....8 GHz Reverse parallel resistance V R = V, f = MHz V R = V, f = GHz V R = V, f =.8 GHz Forward resistance I F = ma, f = MHz I F = 5 ma, f = MHz I F = ma, f = MHz Charge carrier life time I F = ma, I R = 6 ma, measured at I R = 3 ma, R L = Ω C T R P r f pf.45.4.5.9.8 kω 7 5 Ω.65.95.56.9 τ rr 8 ns Iregion width W I 3.5 µm Insertion loss ) I F = ma, f =.8 GHz I F = 5 ma, f =.8 GHz I F = ma, f =.8 GHz Isolation ) V R = V, f =.9 GHz V R = V, f =.8 GHz V R = V, f =.45 GHz BAR65L in series configuration, Z = 5Ω I L I SO db.8.6.5 7 5 3 749

Diode capacitance C T = ƒ (V R ) f = Parameter Reverse parallel resistance R P = ƒ(v R ) f = Parameter.5 F 4 KOhm MHz.4 MHz....8 GHz 3 CT.35 Rp GHz.3.8 GHz.5..5. 4 6 8 4 6 V VR 4 6 8 4 6 V VR Forward resistance r f = ƒ (I F ) f = MHz Forward current I F = ƒ (V F ) T A = Parameter A Ohm rf IF 3 4 4 C 5 C 85 C 5 C 5 ma I F 6..4.6.8 V. V F 4 749

Forward current I F = ƒ (T S ) BAR65L Forward current I F = ƒ (T S ) BAR65V ma ma 9 9 8 8 IF 7 IF 7 6 6 5 5 4 4 3 3 5 3 45 6 75 9 5 C 5 T S 5 3 45 6 75 9 5 C 5 T S Forward current I F = ƒ (T S ) BAR653W ma 9 8 IF 7 6 5 4 3 5 3 45 6 75 9 5 C 5 T S 5 749

Permissible Puls Load R thjs = ƒ (t p ) BAR65L Permissible Pulse Load I Fmax / I FDC = ƒ (t p ) BAR65L RthJS K/W.5...5...5 D = IFmax/IFDC D =.5...5...5 6 5 4 3 s t p 6 5 4 3 s t p Permissible Puls Load R thjs = ƒ (t p ) BAR65V 3 Permissible Pulse Load I Fmax / I FDC = ƒ (t p ) BAR65V RthJS D =,5,,,5,,,5 6 5 4 3 s IFmax/IFDC D =,5,,,5,,,5 6 5 4 3 s T S T S 6 749

Permissible Puls Load R thjs = ƒ (t p ) BAR653W 3 Permissible Pulse Load I Fmax / I FDC = ƒ (t p ) BAR653W ma IF.5...5...5 D = IFmax/IFDC ma D =.5...5...5 7 6 5 4 3 C t p 6 5 4 3 C t p Insertion loss I L = S = ƒ(f) I F = Parameter BAR65L in series configuration, Z = 5Ω db Isolation I SO = S = ƒ(f) V R = Parameter BAR65L in series configuration Z = 5Ω db. S.5 S..5 ma 5 ma ma. ma 5 V V V.3.35 5.4.5.5 GHz 3 f 3.5.5 GHz 3 f 7 749

Package SC79 BAR65... Package Outline.8 ±..6 ±. MAX.. M A +.5.3.3 MAX.. ±. A.3 ±.5.55 ±.4. ±.5 Foot Print.35.35.35 Marking Layout (Example) 5, June Date code BAR63V Type code Laser Standard Packing Reel ø8 mm = 3. Pieces/Reel Reel ø8 mm = 8. Pieces/Reel ( mm Pitch) Reel ø33 mm =. Pieces/Reel Standard 4 Reel with mm Pitch..33.96 8.4.93.66 8 749

Date Code for discrete packages with one digit (SCD8, SC79, SC75 ) ) CESCode Month 3 4 5 6 7 8 9 3 4 a p A P a p A P a p A P b q B Q b q B Q b q B Q 3 c r C R c r C R c r C R 4 d s D S d s D S d s D S 5 e t E T e t E T e t E T 6 f u F U f u F U f u F U 7 g v G V g v G V g v G V 8 h x H X h x H X h x H X 9 j y J Y j y J Y j y J Y k z K Z k z K Z k z K Z l L 4 l L 4 l L 4 n 3 N 5 n 3 N 5 n 3 N 5 ) New Marking Layout for SC75, implemented at October 5.. 9 749

Package SOD33 BAR65... Package Outline +..5. ±.5.9 +...5 ±..3 +..5.45 ±.5 +...7.3 A +.5..5 M A +..5.6 Foot Print.8.7.8.6 Marking Layout (Example) BAR633W Type code Laser Standard Packing Reel ø8 mm = 3. Pieces/Reel Reel ø33 mm =. Pieces/Reel 4. 8.9.65.35 749

Package TSLP BAR65... Package Outline Top view +..4 Bottom view.5 MAX..6 ±.5.65±.5 ±.5 ).5 ±.35 ) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages".6.45.35.75.75.375.3.95.35 Copper Solder mask Stencil apertures Marking Layout (Example) BAS6L Type code Laser Standard Packing Reel ø8 mm = 5. Pieces/Reel Reel ø33 mm = 5. Pieces/Reel (optional) 4.5.6 8 ).5 ±.35.76 749

Edition 6 Published by Infineon Technologies AG 876 München, Germany Infineon Technologies AG 7. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 749