NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package ) Qualified according AE Q Type Marking Pin onfiguration Package F KF* G KG* H KH* EFs EFs EGs EGs EHs EHs = = = = = = SOT SOT SOT SOT SOT SOT * Shrinked chip version Maximum Ratings Parameter Symbol Value Unit ollectoremitter voltage V EO 4 V ollectorbase voltage V BO 7 Emitterbase voltage V EBO ollector current I 8 ma Peak collector current I M A Base current I B ma Peak base current I BM Total power dissipation T S 79, T S, K P tot mw Junction temperature T j Storage temperature T stg 6... Pbcontaining package may be available upon special request 74
Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs K/W K 7 Electrical haracteristics at T A =, unless otherwise specified Parameter Symbol Values Unit min. typ. max. D haracteristics ollectoremitter breakdown voltage I = ma, I B = V (BR)EO 4 V ollectorbase breakdown voltage I = µa, I E = Emitterbase breakdown voltage I E = µa, I = V (BR)BO 7 V (BR)EBO ollectorbase cutoff current I BO µa V B = 4 V, I E =. V B = 4 V, I E =, T A = Emitterbase cutoff current V EB = V, I = I EBO na D current gain ) h FE I = µa ma, V E = V, hfegrp.f 7 I = µa ma, V E = V, hfegrp.g I = µa ma, V E = V, hfegrp.h 8 I = ma, V E = V, hfegrp.f 6 I = ma, V E = V, hfegrp.g 6 4 I = ma, V E = V, hfegrp.h 6 I = ma, V E = V, hfegrp.f, G, H 4 ollectoremitter saturation voltage ) V Esat V I = ma, I B = ma. I = ma, I B = ma.4 Base emitter saturation voltage ) V BEsat I = ma, I B = ma. I = ma, I B = ma. For calculation of R thja please refer to Application Note Thermal Resistance Pulse test: t < µs; D < % 74
Electrical haracteristics at T A =, unless otherwise specified Parameter Symbol Values Unit min. typ. max. A haracteristics Transition frequency f T 7 MHz I = ma, V E = V, f = MHz ollectorbase capacitance cb pf V B = V, f = MHz, V B = V, f = MHz, K 6 Emitterbase capacitance eb V EB =. V, f = MHz, V EB =. V, f = MHz, K 6 4 74
D current gain h FE = ƒ(i ) V E = V ollectoremitter saturation voltage I = ƒ(v Esat ), h FE = BW 6/66 EHP96 BW 6/66 EHP9 h FE Ι ma ma Baseemitter saturation voltage I = ƒ(v BEsat ), h FE = Ι 4 6 mv 8 V E sat ollector cutoff current I BO = ƒ(t A ) V B = V Emax ma Ι BW 6/66 EHP94 Ι B na BW 6/66 4 EHP9 max typ V 4 V BE sat T A 4 74
Transition frequency f T = ƒ(i ) V E = V ollectorbase capacitance cb = ƒ(v B ) Emitterbase capacitance eb = ƒ(v EB ) :, K: MHz f T BW 6/66 EHP9 Ι ma VB/VEB 7 pf 6 4 4 EB: EB: K B: B: K 4 6 8 4 6 V B / EB Total power dissipation P tot = ƒ(t S ) :, K: Permissible Pulse Load P totmax /P totd = ƒ(t p ) Ptot mw 4 4 K P P tot max tot D BW 6/66 t p = D T t p T D =....... EHP9 4 6 7 9 T S 6 4 s t p 74
Package SOT Package Outline +. ).4..9 ±..9 B.9.4 ±.. MIN. MAX. ±.. MAX....8 MAX..8.... ±. A. M B. M A Foot Print ) Lead width can be.6 max. in dambar area.8.8..9..9 Marking Layout (Example) EH s Manufacturer, June Date code (YM) Pin Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.9. 8..6 Pin.. 6 74
Edition 6 Published by Infineon Technologies AG 876 München, Germany Infineon Technologies AG 7. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies omponents may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 74