SN72N SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Qualified according to EC Q Halogen-free according to IEC6249-2-2 Gate pin Product Summary V DS 6 V R DS(on) 5 Ω.2 Drain pin 3 Source pin 2 PG-SOT-23 Type Package Pb-free Tape and Reel Information SN72N PG-SOT-23 Yes H6327: 3 pcs/reel SN72N Maximum Ratings, at T j = 25 C, unless otherwise specified Marking Parameter Symbol Value Unit Continuous drain current T =25 C T =7 C Pulsed drain current T =25 C Reverse diode dv/dt I S =.2, V DS =48V, di/dt=2/µs, T jmax =5 C.2.6 puls.8 ssn dv/dt 6 kv/µs Gate source voltage V GS ±2 V ESD Class (JESD22-4-HBM) Power dissipation T =25 C PG-SOT-23 Yes H6433: pcs/reel ssn (<25V) P tot.36 W Operating and storage temperature T j, T stg -55... +5 C IEC climatic category; DIN IEC 68-55/5/56 Rev. 2.6 Page 2-7-
SN72N Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - ambient at minimal footprint R thj - - 35 K/W Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V (BR)DSS 6 - - V V GS =, =25µ Gate threshold voltage, V GS = V DS V GS(th).8.4.8 =26µ Zero gate voltage drain current SS µ V DS =6V, V GS =, T j =25 C V DS =6V, V GS =, T j =5 C - - - -. 5 Gate-source leakage current I GSS - - n V GS =2V, V DS = Drain-source on-state resistance R DS(on) - 3.9 7.5 Ω V GS =4.5V, =.7 Drain-source on-state resistance V GS =V, =.5 R DS(on) - 2.5 5 Rev. 2.6 Page 2 2-7-
SN72N Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS 2* *R DS(on)max,.9.7 - S =.6 Input capacitance C iss V GS =, V DS =25V, - 34 45 pf Output capacitance C oss f=mhz - 7.2 9.6 Reverse transfer capacitance C rss - 2.8 4.2 Turn-on delay time t d(on) V DD =3V, V GS =V, - 2.4 3.6 ns Rise time t r =.5, R G =6Ω - 3.2 4.8 Turn-off delay time t d(off) - 5.3 8 Fall time t f - 3.6 5.4 Gate Charge Characteristics Gate to source charge Q gs V DD =48V, =.5 -.4.2 nc Gate to drain charge Q gd -.42.63 Gate charge total Q g V DD =48V, =.5, V GS = to V -.5 Gate plateau voltage V (plateau) V DD =48V, =.5-4.5 - V Reverse Diode Inverse diode continuous forward current I S T =25 C - -.2 Inv. diode direct current, pulsedi SM - -.8 Inverse diode forward voltage V SD V GS =, I F = I S -.83.2 V Reverse recovery time t rr V R =3V, I F =l S, - 4.2 2.3 ns Reverse recovery charge Q rr di F /dt=/µs - 5.9 8.8 nc Rev. 2.6 Page 3 2-7-
SN72N Power dissipation P tot = f (T ).38 SN72N W.32.28 2 Drain current = f (T ) parameter: V GS V.22 SN72N.8.6 Ptot.24 ID.4.2.2.6..2.8.6.8.4.4.2 2 4 6 8 2 C 6 T 2 4 6 8 2 C 6 T 3 Safe operating area = f ( V DS ) parameter : D =, T = 25 C SN72N 4 Transient thermal impedance Z thj = f (t p ) parameter : D = t p /T 3 K/W SN72N 2 t p = 2.µs ID - R DS(on) = V DS / ms ms ZthJ D =.5.2 -. -2 DC -2 single pulse.5.2. -3 V 2 V DS Rev. 2.6 Page 4-3 -7-6 -5-4 -3-2 s t p 2-7-
SN72N 5 Typ. output characteristic = f (V DS ) parameter: T j = 25 C, V GS 6 Typ. drain-source on resistance R DS(on) = f ( ) parameter: Tj = 25 C, V GS.75.625 V 7V 6V 5V 4.5V 4.V 3.7V 3.5V 3.V R DS(on) 7.5 Ω 6 5.25 4.5 3.V 3.5V 3.7V 4.V 4.5V 5V 6V 7V V.5 3.75.375 3.25 2.25.5.25.75.5.5 2 2.5 3 3.5 4 V 5 V DS 7 Typ. transfer characteristics = f ( V GS ); V DS 2 x x R DS(on)max parameter: Tj = 25 C..2.3.4.5.6.7.8 8 Typ. forward transconductance g fs = f( ) parameter: Tj = 25 C.4 S.8.7.3.6 gfs.25.5.2.4.5.3.2...5.8.6 2.4 3.2 4 4.8 V 6 V GS.2.4.6.8. Rev. 2.6 Page 5 2-7-
SN72N 9 Drain-source on-state resistance R DS(on) = f (T j ) parameter : =.5, V GS = V Ω 5 SN72N 2 Typ. gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS ; =26µ 2.2 V 98%.8 RDS(on) 9 8 VGS(th).6.4.2 typ. 7 6 5 98%.8 2% 4.6 3 2 typ.4.2-6 -2 2 6 C 8 T j -6-2 2 6 C 6 T j Typ. capacitances C = f (V DS ) parameter: V GS =, f= MHz, Tj = 25 C 2 2 Forward character. of reverse diode I F = f (V SD ) parameter: T j SN72N pf Ciss - C IF Coss Crss -2 T j = 25 C typ T j = 5 C typ T j = 25 C (98%) T j = 5 C (98%) 5 5 2 V 3 V DS Rev. 2.6 Page 6-3.4.8.2.6 2 2.4 V 3 V SD 2-7-
SN72N 3 Typ. gate charge V GS = f (Q G ); parameter: V DS, =.2 pulsed, T j = 25 C 6 SN72N V 4 Drain-source breakdown voltage V (BR)DSS = f (T j ) 72 SN72N V VGS 2.2 V DS max V(BR)DSS 68 66 8.5 V DS max.8 V DS max 64 62 6 6 4 58 2 56.4.8.2.6 2 nc 2.8 Q G 54-6 -2 2 6 C 8 T j Rev. 2.6 Page 7 2-7-
SN72N SOT23 Package Outline: Footprint: Packaging: Dimensions in mm Rev 2.6 page 8 2-7-
SN72N Published by Infineon Technologies G 8726 Munich, Germany 29 Infineon Technologies G ll Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.6 page 9 2-7-