Ultrafast Rectifier, 6 FRED Pt 4 TO-220B 2 3 Base common cathode 4 2 Common node cathode node 3 FETURES Ultrafast recovery time Low forward voltage drop 75 C operating junction temperature Low leakage current EC-Q qualified, meets JESD 20 class 2 whisker test Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PRIMRY CHRCTERISTICS I F(V) 2 x 8 V R 400 V V F at I F 0.94 V t rr (typ.) 24 ns T J max. 75 C Package TO-220B Circuit configuration Common cathode DESCRIPTION / PPLICTIONS FRED Pt series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Peak repetitive reverse voltage V RRM 400 V per leg 8 verage rectified forward current I F(V) total device T C = 55 C, rated V R 6 Non-repetitive peak surge current I FSM T C = 25 C 0 Peak repetitive forward current I FRM T C = 55 C, rated V R, square wave, 20 khz 6 Operating junction and storage temperatures T J, T Stg -65 to +75 C ELECTRICL SPECIFICTIONS PER LEG ( unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = 0 μ 400 - - I F = 8 -.9.3 Forward voltage V F I F = 8, T J = 50 C - 0.94.0 V R = V R rated - 0.2 Reverse leakage current I R T J = 50 C, V R = V R rated - 20 500 μ Junction capacitance C T V R = 400 V - 4 - pf Series inductance L S Measured lead to lead 5 mm from package body - 8.0 - nh V Revision: 2-Sep-208 Document Number: 94720 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
DYNMIC RECOVERY CHRCTERISTICS PER LEG ( unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS I F =.0, di F /dt = 50 /μ, V R = 30 V - 35 - Reverse recovery time t rr I F =.0, di F /dt = 0 /μ, V R = 30 V - 24 - - 43 - ns - 67 - Peak recovery current I RRM T I F = 8 J = 25 C - 2.8 - di F /dt = 200 /μs V R = 200 V - 6.3 - - 60 - Reverse recovery charge Q rr - 2 - nc THERML MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg -65-75 C Thermal resistance, per leg - 3.6 4 R thjc junction to case per device -.8 2 Thermal resistance, junction to ambient R thj Typical socket mount - - 50 C/W Thermal resistance, case to heatsink Weight Mounting torque R thcs Mounting surface, flat, smooth, and greased - 0.5 - - 2.0 - g - 0.07 - oz. Marking device Case style TO-220B 6CTU04H 6.0 (5.0) - 2 () kgf cm (lbf in) Revision: 2-Sep-208 2 Document Number: 94720 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
0 00 I F - Instantaneous Forward Current () T J = 75 C T J = 50 C I R - Reverse Current (µ) 0 0. 0.0 0.00 T J = 75 C T J = 50 C T J = 0 C 0. 0 0.5.5 2 2.5 V F - Forward Voltage Drop (V) Fig. - Typical Forward Voltage Drop Characteristics 0.000 0 0 200 300 400 V R - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage C T - Junction Capacitance (pf) 00 0 0 0 200 300 400 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) D = 0.50 D = 0.20 t 0. D = 0. D = 0.05 t 2 Single pulse D = 0.02 Notes: (thermal resistance) D = 0.0. Duty factor D = t /t 2. 2. Peak T J = P DM x Z thjc + T C 0.0 0.0000 0.000 0.00 0.0 0. t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics P DM. Revision: 2-Sep-208 3 Document Number: 94720 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
80 90 llowable Case Temperature ( C) 70 60 50 40 30 Square wave (D = 0.50) Rated V R applied See note () DC 0 2 4 6 8 2 t rr (ns) 80 70 60 50 40 30 V R = 200 V I f = 6 I f = 8 20 0 00 I F(V) - verage Forward Current () Fig. 5 - Maximum llowable Case Temperature vs. verage Forward Current di F /dt (/µs) Fig. 7 - Typical Reverse Recovery Time vs. di F /dt verage Power Loss (W) 4 2 8 6 4 2 D = 0.0 D = 0.02 D = 0.05 D = 0. D = 0.2 D = 0.5 DC RMS limit Q rr (nc) 500 450 400 350 300 250 200 50 0 50 V R = 200 V I F = 6 I F = 8 0 0 2 4 6 8 2 0 0 00 I F(V) - verage Forward Current () Fig. 6 - Forward Power Loss Characteristics di F /dt (/µs) Fig. 8 - Typical Stored Charge vs. di F /dt Note () Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = inverse power loss = V R x I R ( - D); I R at V R = rated V R Revision: 2-Sep-208 4 Document Number: 94720 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
(3) 0 I F t a t rr tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (4) Q rr - area under curve defined by t rr and I RRM (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions ORDERING INFORMTION TBLE Device code VS- 6 C T U 04 H N3 2 3 4 5 6 7 8 - product 2 - Current rating (6 = 6 ) 3 - Circuit configuration: 4 C = Common cathode 4 - Package: 4 T = TO-220 5 - Ultrafast recovery 6 - Voltage rating (04 = 400 V) 7 - H = EC-Q qualified 8 - Environmental digit: N3 = Halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION 50 00 ntistatic plastic tube Dimensions Part marking information SPICE model LINKS TO RELTED DOCUMENTS www.vishay.com/doc?95222 www.vishay.com/doc?95028 www.vishay.com/doc?96565 Revision: 2-Sep-208 5 Document Number: 94720 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
Outline Dimensions TO-220B DIMENSIONS in millimeters and inches (6) E E2 (7) Ø P 0.04 M B M B Seating plane (E) Thermal pad (6) D Q 2 3 (6) (H) D D H (7) C C D2 (6) Detail B L (2) D 3 x b 3 x b2 3 2 Detail B C E (6) L Base metal (b, b2) Plating 0.05 M B M Lead tip 2 x e e c 2 Lead assignments Diodes. - node/open 2. - Cathode 3. - node View - c c (4) (4) b, b3 Section C - C and D - D Conforms to JEDEC outline TO-220B SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.25 4.65 0.67 0.83 E..5 0.398 0.44 3, 6.4.40 0.045 0.055 E 6.86 8.89 0.270 0.350 6 2 2.56 2.92 0. 0.5 E2-0.76-0.030 7 b 0.69.0 0.027 0.040 e 2.4 2.67 0.095 0.5 b 0.38 0.97 0.05 0.038 4 e 4.88 5.28 0.92 0.208 b2.20.73 0.047 0.068 H 6.09 6.48 0.240 0.255 6, 7 b3.4.73 0.045 0.068 4 L 3.52 4.02 0.532 0.552 c 0.36 0.6 0.04 0.024 L 3.32 3.82 0.3 0.50 2 c 0.36 0.56 0.04 0.022 4 Ø P 3.54 3.73 0.39 0.47 D 4.85 5.25 0.585 0.600 3 Q 2.60 3.00 0.2 0.8 D 8.38 9.02 0.330 0.355 90 to 93 90 to 93 D2.68 2.88 0.460 0.507 6 Notes () Dimensioning and tolerancing as per SME Y4.5M-994 (2) Lead dimension and finish uncontrolled in L (3) Dimension D, D and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b, b3 and c apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H, D2 and E (7) Dimensions E2 x H define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, except 2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95222 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 08-Mar- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
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