Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 3 S 1. Gate. Drain (Flange) 3. Source
Absolute Maximum Ratings (Ta = 5 C) Item Symbol Ratings Unit Drain to source voltage SK1169 V DSS V SK1170 0 Gate to source voltage V GSS ±30 V Drain current I D A Drain peak current I D(pulse) * 1 80 A Body to drain diode reverse drain current I DR A Channel dissipation Pch* 1 W Channel temperature Tch 1 C Storage temperature Tstg 55 to +1 C Notes: 1. PW µs, duty cycle 1%. Value at T C = 5 C
Electrical Characteristics (Ta = 5 C) Item Symbol Min Typ Max Unit Test conditions Drain to source SK1169 V (BR)DSS V I D = ma, V GS = 0 breakdown voltage SK1170 0 Gate to source breakdown voltage V (BR)GSS ±30 V I G = ±0 µa, V DS = 0 Gate to source leak current I GSS ± µa V GS = ±5 V, V DS = 0 Zero gate voltage SK1169 I DSS µa V DS = 360 V, V GS = 0 drain current SK1170 V DS = 00 V, V GS = 0 Gate to source cutoff voltage V GS(off).0 3.0 V I D = 1 ma, V DS = V Static Drain to source SK1169 R DS(on) 0. 0.5 Ω I D = A, V GS = V * 1 on state resistance SK1170 0. 0.7 Forward transfer admittance yfs 16 S I D = A, V DS = V * 1 Input capacitance Ciss 800 pf V DS = V, V GS = 0, Output capacitance Coss 780 pf f = 1 MHz Reverse transfer capacitance Crss 90 pf Turn-on delay time t d(on) 3 ns I D = A, V GS = V, Rise time t r 115 ns R L = 3 Ω Turn-off delay time t d(off) 0 ns Fall time t f 90 ns Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test V DF V I F = A, V GS = 0 t rr 0 ns I F = A, V GS = 0, di F /dt = 0 A/µs 3
1 Power vs. Temperature Derating 0 Maximum Safe Operation Area Channel Dissipation Pch (W) 0 0 0 1 Case Temperature T C ( C) 30 3 0 µs PW = ms (1Shot) 1 ms DC Operation (T C = 5 C) µs Operation in this area is limited by R DS (on) 0.3 Ta = 5 C SK1170 SK1169 0.1 1 3 30 0 300 1,000 Drain to Source Voltage V DS (V) 0 Typical Output Characteristics V 7 V 6 V 16 Typical Transfer Characteristics V DS = V 30 5 V V GS = V 1 8 75 C 5 C T C = 5 C 0 30 0 Drain to Source Voltage V DS (V) 0 6 8 Gate to Source Voltage V GS (V)
Drain to Source Saturation Voltage V DS (on) (V) 8 6 Drain to Source Saturation Voltage vs. Gate to Source Voltage A A I D = 5 A 0 8 1 16 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance R DS (on) (Ω) 5 0.5 0. 0.1 Static Drain to Source on State Resistance vs. Drain Current V GS = V 15 V 0.05 1 5 0 Static Drain to Source on State Resistance R DS (on) (Ω) 0.8 0.6 0. 0. 0 0 Static Drain to Source on State Resistance vs. Temperature V GS = V I D = A A 5 A 0 0 80 1 160 Case Temperature T C ( C) Forward Transfer Admittance yfs (S) 5 Forward Transfer Admittance vs. Drain Current V DS = V 5 C T C = 5 C 75 C 0.5 0. 0.5 5 5
Reverse Recovery Time t rr (ns) 5,000,000 1,000 0 0 0 Body to Drain Diode Reverse Recovery Time di/dt = 0 A/µs, Ta = 5 C V GS = 0 Capacitance C (pf),000 1,000 0 Typical Capacitance vs. Drain to Source Voltage V GS = 0 f = 1 MHz Ciss Coss Crss 0.5 5 Reverse Drain Current I DR (A) 0 30 0 Drain to Source Voltage V DS (V) Drain to Source Voltage V DS (V) 0 00 300 0 Dynamic Input Characteristics V DS V DD = 0 V V 00 V V GS 0 I V DD = 00 V D = A V 0 V 0 0 0 80 1 160 0 Gate Charge Qg (nc) 16 1 8 Gate to Source Voltage V GS (V) Switching Time t (ns) 0 0 0 t f t r Switching Characteristics t d (off) t d (on) V GS = V V DD = 30 V PW = µs, duty < 1% 5 0.5 5 6
Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) 16 1 8 5 V, V V GS = 0, V 0 0. 0.8 1. 1.6.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance γ S (t) 3 0.3 0.1 0.03 0.01 D = 1 0.01 0.5 0. 0.1 0.05 0.0 1Shot Pulse Normalized Transient Thermal Impedance vs. Pulse Width θch c (t) = γ S (t) θch c θch c = C/W,T C = 5 C µ 0 µ 1 m m 0 m 1 Pulse Width PW (s) P DM PW T T C = 5 C D = PW T Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T R L Vin % Wavewforms 90 % Vin = V Ω. V DD = 30 V. Vout % 90 % td (on) tr 90 % td (off) % tf 7
15.6 ± 0.3 φ3. ± 0. 5.0 ± 0.3.8 ± 0. 1.5 Unit: mm 0.5 1.6 1. Max.0.0 1.9 ± 0. 18.0 ± 0.5 19.9 ± 0. 0.3.8 ± 0. 0.6 ± 0. 3.6 0.9 5.5 ± 0.5 5.5 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P Conforms 5.0 g
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