IXD_64 4-Ampere Low-Side Ultrafast MOSFET Drivers Features 4A Peak Source/Sink Drive Current Wide Operating Voltage Range: 4.V to V - C to +2 C Extended Operating Temperature Range Logic Input Withstands Negative Swing of up to V Low Propagation Delay Time: ns Low, µa Supply Current Low Output Impedance Applications Efficient Power MOSFET and IGBT Switching Switch Mode Power Supplies Motor Controls DC to DC Converters Class-D Switching Amplifiers Pulse Transformer Driver Pb RoHS 22/9/EC e Description The IXDD64 / IXDI64 / IXDN64 high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs. Each output can source and sink 4A of peak current while producing voltage rise and fall times of less than ns. Internal circuitry eliminates cross-conduction and current "shoot-through," and the driver is virtually immune to latch up. Low propagation delay and fast rise and fall times make the IXD_64 family ideal for high-frequency and high-power applications. The IXDD64 is configured as a non-inverting driver with an enable. The IXDN64 is configured as a non-inverting driver, and the IXDI64 is configured as an inverting driver. The IXD_64 family is available in an 8-pin DIP (PI), an 8-lead Power SOIC with an exposed metal back (SI), a -pin TO-22 (CI), and a -lead TO-26 (YI) package. Ordering Information Part Number Logic Configuration Package Type Packing Method Quantity IXDD64PI 8-Pin DIP Tube IXDD64SI 8-Lead Power SOIC with Exposed Metal Back Tube IXDD64SITR EN 8-Lead Power SOIC with Exposed Metal Back Tape & Reel 2 IXDD64CI -Pin TO-22 Tube IXDD64YI -Lead TO-26 Tube IXDI64PI 8-Pin DIP Tube IXDI64SI 8-Lead Power SOIC with Exposed Metal Back Tube IXDI64SITR 8-Lead Power SOIC with Exposed Metal Back Tape & Reel 2 IXDI64CI -Pin TO-22 Tube IXDI64YI -Lead TO-26 Tube IXDN64PI 8-Pin DIP Tube IXDN64SI 8-Lead Power SOIC with Exposed Metal Back Tube IXDN64SITR 8-Lead Power SOIC with Exposed Metal Back Tape & Reel 2 IXDN64CI -Pin TO-22 Tube IXDN64YI -Lead TO-26 Tube DS-IXD_64-RJ PRELIMARY
IXD_64. Specifications............................................................................................... Lead Configurations.......................................................................................2 Lead Definitions.......................................................................................... Absolute Maximum Ratings.................................................................................4 Electrical Characteristics: T A = 2 C......................................................................... 4. Electrical Characteristics: T A = - C to +2 C................................................................6 Thermal Characteristics................................................................................... 2. Functional Description....................................................................................... 6 2. IXDD64 Block Diagram & Truth Table....................................................................... 6 2.2 IXDI64 Block Diagram & Truth Table........................................................................ 6 2. IXDN64 Block Diagram & Truth Table....................................................................... 6 2.4 Timing Diagrams........................................................................................ 7 2. Characteristics Test Diagram............................................................................... 7. Performance Data........................................................................................... 8 4. Manufacturing Information................................................................................... 4. Mechanical Dimensions.................................................................................. 4.. SI (8-Lead Power SOIC with Exposed Metal Back)....................................................... 4..2 YI (-Lead TO-26)................................................................................ 4.. CI (-Pin TO-22)................................................................................. 2 4..4 PI (8-Pin DIP).................................................................................... 2 RJ PRELIMARY 2
IXD_64 Specifications. Lead Configurations.2 Lead Definitions IXDD64 D2 / PI / SI IXDD64 CI / YI Lead Name Description EN 2 4 8 7 6 EN 2 4 EN Logic Input Output Enable - Drive lead low to disable output, and force output to a high impedance state IXDI64 PI / SI 8 IXDI64 CI / YI Output - Sources or sinks current to turn-on or turn-off a discrete MOSFET or IGBT Inverted Output - Sources or sinks current to turn-on or turn-off a discrete MOSFET or IGBT NC 2 4 7 6 NC 2 4 NC Supply Voltage - Provides power to the device Ground - Common ground reference for the device Not connected IXDN64 PI / SI IXDN64 CI / YI 8 NC 2 7 6 2 4 4 NC. Absolute Maximum Ratings Parameter Symbol Minimum Maximum Units Supply Voltage -. V Input Voltage V, V EN - +. V Output Current I - ±4 A Junction Temperature T J - + C Storage Temperature T STG -6 + C Unless stated otherwise, absolute maximum electrical ratings are at 2 C Absolute maximum ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. RJ PRELIMARY
IXD_64.4 Electrical Characteristics: T A = 2 C Test Conditions: 4.V < < V (unless otherwise noted). Parameter Conditions Symbol Minimum Typical Maximum Units Input Voltage, High 4.V < < 8V V IH. - - Input Voltage, Low 4.V < < 8V V IL - -.8 V Input Current V < V < I - - µa EN Input Voltage, High IXDD64 only V ENH 2/ - - EN Input Voltage, Low IXDD64 only V ENL - - / Output Voltage, High - V OH -.2 - - Output Voltage, Low - V OL - -.2 V V Output Resistance, High State =8V, I =-ma R OH -.4.8 Output Resistance, Low State =8V, I =ma R OL -..6 Output Current, Continuous Limited by package power dissipation I DC - - ±4 A Rise Time OAD =nf, =8V t R - 2 Fall Time OAD =nf, =8V t F - 8 2 Ω On-Time Propagation Delay OAD =nf, =8V t ONDLY - 7 Off-Time Propagation Delay OAD =nf, =8V t OFFDLY - 7 ns Enable to Output-High Delay Time IXDD64 only t ENOH - 6 Disable to High Impedance State Delay Time IXDD64 only t DOLD - 44 7 Enable Pull-Up Resistor IXDD64 only R EN - 2 - kω =8V, V =.V - 2 ma Power Supply Current =8V, V =V I CC - - µa =8V, V = - - 4 PRELIMARY RJ
IXD_64. Electrical Characteristics: T A = - C to +2 C Test Conditions: 4.V < < V. Parameter Conditions Symbol Minimum Typical Maximum Units Input Voltage, High 4.V < < 8V V IH. - - Input Voltage, Low 4.V < < 8V V IL - -.6 Input Voltage Range - V - - +. V Input Current V < V < I - - µa Output Voltage, High - V OH -.2 - - Output Voltage, Low - V OL - -.2 V Output Resistance, High State =8V, I =-ma R OH - -. Ω Output Resistance, Low State =8V, I =ma R OL - -.2 Limited by package power Output Current, Continuous I dissipation DC - - ± A Rise Time OAD =nf, =8V t R - - Fall Time OAD =nf, =8V t F - - On-Time Propagation Delay OAD =nf, =8V t ONDLY - - 9 Off-Time Propagation Delay OAD =nf, =8V t OFFDLY - - 9 ns Enable to Output-High Delay Time IXDD64 only t ENOH - - 7 ma Disable to High Impedance State Delay Time IXDD64 only t DOLD - - 8 =8V, V =.V -. Power Supply Current =8V, V =V I CC - - µa =8V, V = - -.6 Thermal Characteristics Package Parameter Symbol Rating Units CI (-Pin TO-22) 6 PI (8-Pin DIP) 2 Thermal Resistance, Junction-to-Ambient θ JA SI (8-Lead Power SOIC) 8 C/W YI (-Lead TO-26) 46 CI (-Pin TO-22) SI (8-Lead Power SOIC) Thermal Resistance, Junction-to-Case θ JC C/W YI (-Lead TO-26) 2 RJ PRELIMARY
IXD_64 2 Functional Description 2. IXDD64 Block Diagram & Truth Table IXDD64 2. IXDN64 Block Diagram & Truth Table IXDN64 EN EN or open or open Z Z 2.2 IXDI64 Block Diagram & Truth Table IXDI64 6 PRELIMARY RJ
IXD_64 2.4 Timing Diagrams V IH V IH V IL V IL t ONDELAY t OFFDELAY t OFFDELAY t ONDELAY 9% % 9% % t R t F t F t R 2. Characteristics Test Diagram EN.µF µf + - V OAD Tektronix Current Probe 62 RJ PRELIMARY 7
IXD_64 Performance Data Rise Time (ns) 8 7 6 2 Rise Time vs. Supply Voltage (V =-V, f=khz, T A =2ºC) =nf =7.nF =.6nF 2 2 Fall Time (ns) 6 2 Fall Time vs. Supply Voltage (V =V-V, f=khz, T A =2ºC) =nf =7.nF =.6nF 2 2 Time (ns) Rise & Fall Time vs. Temperature (V =-V, f=khz, =.6nF, =8V) 4 t R 2 t F 9 8 7 6 - -2 2 6 8 2 Rise Time (ns) 8 7 6 2 Rise Time vs. Load Capacitance =4.V =8V =2V =8V =2V =V =V 2 4 6 8 2 4 6 Load Capacitance (nf) Fall Time (ns) 4 2 2 Fall Time vs. Load Capacitance =4.V =8V =2V =8V =2V =V =V 2 4 6 8 2 4 6 Load Capacitance (nf) Propagation Delay (ns) 2 2 Propagation Delay vs. Supply Voltage (V =-V, f=khz, =nf) t ONDLY t OFFDLY Propagation Delay (ns) 6 2 8 6 Propagation Delay vs. Input Voltage (V =-V, f=khz, =nf, =2V) t OFFDLY Propagation Delay (ns) 7 6 6 4 Propogation Delay vs. Junction Temperature (V =-V, f=khz, =nf, =8V) t OFFDLY t ONDLY 2 2 t ONDLY 2 4 6 8 2 4 Input Voltage (V) - -2 2 6 8 2. Input Threshold vs. Temperature ( =.6nF, =8V). Input Threshold vs. Supply Voltage 2 Enable Threshold vs. Supply Voltage Input Threshold (V). 2. 2. Min V IH Max V IL Enable Threshold (V). 2. 2. Min V IH Max V IL Enable Threshold (V) 2 Min V ENH Max V ENL. - -2 2 6 8 2. 2 2 2 2 8 PRELIMARY RJ
IXD_64 Supply Current vs. Load Capacitance ( =V) f=2mhz f=mhz f=khz f=khz f=khz f=khz f=khz 2 4 6 8 2 4 6 8 Load Capacitance (pf). Supply Current vs. Load Capacitance ( =8V) f=2mhz f=mhz f=khz f=khz f=khz f=khz f=khz 2 4 6 8 2 4 6 8 Load Capacitance (nf). Supply Current vs. Load Capacitance ( =2V) f=2mhz f=mhz f=khz f=khz f=khz f=khz f=khz 2 4 6 8 2 4 6 8 Load Capacitance (nf). Supply Current vs. Load Capacitance ( =8V) f=2mhz f=mhz f=khz f=khz f=khz f=khz f=khz Supply Current vs. Frequency ( =V) =nf =7.nF =.6nF Supply Current vs. Frequency ( =8V) =nf =7.nF =.6nF. 2 4 6 8 2 4 6 8 Load Capacitance (nf). Frequency (khz). Frequency (khz) Supply Current vs. Frequency ( =2V) =nf =7.nF =.6nF. Supply Current vs. Frequency ( =8V) =nf =7.nF =.6nF 2..... Quiescent Supply Current vs. Temperature.V V V V & 8V. Frequency (khz). Frequency (khz) -. - -2 2 6 8 2 Dynamic Current (ma).4.2..8.6.4.2 Dynamic Supply Current vs. Temperature (V =-V, f=khz, =.4nF, =8V). - -2 2 6 8 2 Output Source Current (A) - - - -2-2 - - Output Source Current vs. Supply Voltage ( =nf) 2 2 Output Sink Current (A) 4 2 2 Output Sink Current vs. Supply Voltage ( =nf) 2 2 RJ PRELIMARY 9
IXD_64 - Output Source Current vs. Temperature ( =nf, =8V) 24 Output Sink Current vs. Temperature ( =nf, =8V) Output Source Current (A) -2-4 -6-8 -2 Output Sink Current (A) 2 22 2 2 9 8 7-22 - -2 2 6 8 2 6 - -2 2 6 8 2 Output Resistance (Ω) High-State Output Resistance @ -ma vs. Supply Voltage..9.8.7.6..4. 2 2 Output Resistance (Ω) Low-State Output Resistance @ +ma vs. Supply Voltage.7.6..4..2. 2 2 PRELIMARY RJ
IXD_64 4 Manufacturing Information 4. Mechanical Dimensions 4.. SI (8-Lead Power SOIC with Exposed Metal Back). /.2 (.4 /.).8 (.).8 / 6.2 (.228 /.244).8 / 4. (. /.7). /.27 (.6 /.). 2.7 (.29) (.8). (.6) P. /. (.2 /.2) 4.8 /. (.9 /.97).27 BSC (. BSC).2 /. x4º (. /.2 x4º). /. (. /.4) º / 8º.27 (.).6 (.24) Recommended PCB Land Pattern 2.29 / 2.79 (.9 /.). /.7 (. /.69) Dimensions mm M / mm MAX (inches M / inches MAX). /.8 (. /.) NOTE: Molded package conforms to JEDEC standard configuration MS-2 variation BA. 4..2 YI (-Lead TO-26). /. (.9 /.) 9.6 /. (.8 /.6).2 /. (.47 /.) 4.2 / 4.8 (.6 /.89) Recommended PCB Pattern. (.9) 8.8 / 9. (.46 /.74).6 /.99 (.24 /.9) 2 4 7. / 8.2 (.29 /.2) 4.8 /.8 (.8 /.622).7 BSC (.67 BSC) Optional. /.7 (.6 /.28) 2.24 / 2.84 (.88 /.2).6 (.44) 6. (.2).7 (.67) 9. (.6).8 (.2). (.4) º - º 6 6.6 / 7.2 (.26 /.28) 2. / 2.7 (.8 /.6) DIMENSIONS mm M / mm MAX (inches M / inches / MAX).2 /.7 (.47 /.67) NOTES:. All metal surfaces are solder solder-plated except trimmed area. 2. Short lead of No. is optional to IXYS.. No. lead is connected to No. 6 lead (bottom heat sink) internally. RJ PRELIMARY
IXD_64 4.. CI (-Pin TO-22) 9.9 /.4 (.9 /.4).4 /. (.4 /.) 4.2 / 4.8 (.7 /.9) Recommended Hole Pattern Finished Hole Diameter =.4mm (.7 in.).94 / 2.9 (.47 /.) 4.7 /.7 (.8 /.62) 8.64 / 9. (. /.7).7mm (.67 in.) 2.27 / 26.4 (.99 /.4).64 /.2 (.2 /.) 4..4 PI (8-Pin DIP) DIMENSIONS mm M / mm MAX (inches M / inches / MAX).7 BSC (.67 BSC).8 /.64 (. /.2) 2.29 / 2.92 (.9 /.) NOTES:. This drawing will meet all dimensions requirement of JEDEC outlines TS-AA and -lead version TO-22AB. 2. Mounting hole diameter:. /.96 (.9 /.6) 9.2 /.6 (. /.).2 /.8 (.8 /.) 8-.9 DIA. (8-. DIA.) 2. (.) 6. / 6.86 (.2 /.27) 7.62 BSC (. BSC). (.) 7. (.29) 2. BSC (. BSC).8 /.2 (. /.) 7.7 / 8.26 (.29 /.2). /.8 (.2 /.).4 / 4.7 (. /.8) 7.62 /.92 (. /.4) PC Board Pattern Dimensions mm M / mm MAX (inches M / inches MAX).4 /.6 (.4 /.6).8 /.8 (. /.2).8 /.8 (.2 /.) NOTE: Molded package conforms to JEDEC standard configuration MS- variation BA. For additional information please visit our website at: www.clare.com Clare, Inc. makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in Clare s Standard Terms and Conditions of Sale, Clare, Inc. assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of Clare s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. Clare, Inc. reserves the right to discontinue or make changes to its products at any time without notice. Specification: DS-IXD_64-RJ Copyright 2, Clare, Inc. All rights reserved. Printed in USA. 9/2/2 2 PRELIMARY RJ