OptiMOS Power-Transistor Features For fast switching converters and sync. rectification N-channel enhancement - logic level 175 C operating temperature Product Summary V DS 6 V R DS(on),max SMDversion 4.4 m I D 1 A Avalanche rated Pb-free lead plating, RoHS compliant Type IPP48N6L IPB48N6L Package PG-TO22-3 PG-TO263-3 Marking 48N6L 48N6L Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T C =25 C 1) 1 A T C =1 C 1 Pulsed drain current I D,pulse T C =25 C 2) 4 Avalanche energy, single pulse E AS I D =1 A, R GS =25 81 mj Reverse diode dv /dt dv /dt I D =1 A, V DS =48 V, di /dt =2 A/μs, T j,max =175 C 6 kv/μs Gate source voltage V GS ±2 V Power dissipation P tot T C =25 C 3 W Operating and storage temperature T j, T stg -55... 175 C IEC climatic category; DIN IEC 68-1 55/175/56 1) Current is limited by bondwire; with an R thjc =.5 the chip is able to carry 161A 2) See figure 3 Rev. 1.13 page 1 27-8-29
Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thjc - -.5 K/W SMD version, device on PCB R thja minimal footprint - - 62 6 cm 2 cooling area 3) - - 4 Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D =1 ma 6 - - V Gate threshold voltage V GS(th) V DS =V GS, I D =27 μa 1.2 1.6 2 Zero gate voltage drain current I DSS V DS =6 V, V GS = V, T j =25 C -.1 1 μa V DS =6 V, V GS = V, T j =125 C - 1 1 Gate-source leakage current I GSS V GS =2 V, V DS = V - 1 1 na Drain-source on-state resistance R DS(on) V GS =1 V, I D =1 A - 3.7 4.7 m V GS =4.5 V, I D =66 A - 4.4 5.7 V GS =1 V, I D =1 A, SMD version 3.4 4.4 V GS =4.5 V, I D =66A, SMD version 4.1 5.4 Gate resistance R G - 1.9 - Transconductance g fs V DS >2 I D R DS(on)max, I D =1 A 92 183 - S 3) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 μm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.13 page 2 27-8-29
Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 57 76 pf Output capacitance C oss V GS = V, V DS =3 V, f =1 MHz - 15 2 Reverse transfer capacitance C rss - 35 525 Turn-on delay time t d(on) - 18 27 ns Rise time t r V DD =3 V, V GS =4.5 V, - 25 38 Turn-off delay time t d(off) I D =1 A, R G =1.3-98 15 Fall time t f - 24 36 Gate Charge Characteristics 4) Gate to source charge Q gs - 2 26 nc Gate charge at threshold Q g(th) - 9.1 12 Gate to drain charge Q gd V DD =3 V, I D =1 A, - 54 81 Switching charge Q sw V GS = to 1 V - 64 95 Gate charge total Q g - 169 225 Gate plateau voltage V plateau - 3.5 - V Output charge Q oss V DD =3 V, V GS = V - 47 63 Reverse Diode Diode continous forward current I S - - 1 A T C =25 C Diode pulse current I S,pulse - - 4 Diode forward voltage V SD V GS = V, I F =1 A, T j =25 C -.93 1.3 V Reverse recovery time t rr V R =3 V, I F =I S, - 65 8 ns Reverse recovery charge Q rr di F /dt =1 A/μs - 125 16 nc 4) See figure 16 for gate charge parameter definition Rev. 1.13 page 3 27-8-29
1 Power dissipation 2 Drain current P tot =f(t C ); V GS 6 V I D =f(t C ); V GS 1 V 35 12 3 1 25 8 P tot [W] 2 15 6 4 1 5 2 5 1 15 2 5 1 15 2 T C [ C] T C [ C] 3 Safe operating area 4 Max. transient thermal impedance I D =f(v DS ); T C =25 C; D = Z thjc =f(t p ) parameter: t p parameter: D =t p /T 1 limited by on-state resistance 1 μs 1 μs.5 1 2 1 μs DC 1 ms 1-1.2 1 1 1 ms Z thjc [K/W].1.5 1-2.2 1.1 single pulse 1-1 1-1 1 1 1 1 2 1-3 1-6 1-5 1-4 1-3 1-2 1-1 1 V DS [V] t p [s] Rev. 1.13 page 4 27-8-29
5 Typ. output characteristics 6 Typ. drain-source on resistance I D =f(v DS ); T j =25 C R DS(on) =f(i D ); T j =25 C parameter: V GS parameter: V GS 24 5V 4.5 V 5.5 V 1 3.5 V 2 1V 4 V 8 4 V 16 12 8 3.5 V R DS(on) [m ] 6 4 6 V 5.5 V 4.5 V 5 V 1 V 4 3 V 2 1 2 3 V DS [V] 4 8 12 16 2 7 Typ. transfer characteristics 8 Typ. forward transconductance I D =f(v GS ); V DS >2 I D R DS(on)max g fs =f(i D ); T j =25 C parameter: T j 2 24 18 16 2 14 16 12 1 g fs [S] 12 8 6 8 4 175 C 25 C 4 2 1 2 3 4 V GS [V] 4 8 12 16 2 Rev. 1.13 page 5 27-8-29
9 Drain-source on-state resistance 1 Typ. gate threshold voltage R DS(on) =f(t j ); I D =1 A; V GS =1 V V GS(th) =f(t j ); V GS =V DS parameter: I D 12 2.5 1 2 8 27 μa R DS(on) [m ] 6 4 98 % typ V GS(th) [V] 1.5 1 27 μa 2.5-6 -2 2 6 1 14 18 T j [ C] -6-2 2 6 1 14 18 T j [ C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(v DS ); V GS = V; f =1 MHz I F =f(v SD ) parameter: T j 1 5 25 C 98% 175 C 98% 1 4 Ciss 1 2 175 C 25 C C [pf] Coss I F [A] 1 1 1 3 Crss 1 1 2 1 2 3 4 5 1-1.5 1 1.5 2 2.5 V DS [V] V SD [V] Rev. 1.13 page 6 27-8-29
13 Avalanche characteristics 14 Typ. gate charge I AS =f(t AV ); R GS =25 parameter: T j(start) 1 3 V GS =f(q gate ); I D =1 A pulsed parameter: V DD 12 1 12V 3 V 48 V 1 2 25 C 8 I AV [A] 15 C 1 C V GS [V] 6 1 1 4 2 1 1 1 1 t AV [μs] 1 2 1 3 4 8 12 16 2 Q gate [nc] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS) =f(t j ); I D =1 ma 75 V GS 7 Q g V BR(DSS) [V] 65 6 V gs(th) 55 Q g(th) Q sw Q gate 5-6 -2 2 6 1 14 18 T j [ C] Q gs Q gd Rev. 1.13 page 7 27-8-29
PG-TO-263-3 (D²-Pak) Rev. 1.13 page 8 27-8-29
PG-TO22-3: Outline Rev. 1.13 page 9 27-8-29
Published by Infineon Technologies AG 81726 Munich, Germany Infineon Technologies AG 27. All Rights Reserved. Legal disclaimer The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.13 page 1 27-8-29