BSP6 PNP Silicon Darlington Transistor High collector current Low collectoremitter saturation voltage Complementary types: BSP0...BSP (NPN) 1 Pbfree (RoHS compliant) package 1) Qualified according AEC Q1 Type Marking Pin Configuration Package BSP6 BSP6 1=B 1=B 1=B =C =C =C =E =E =E =C =C =C SOT SOT SOT Maximum Ratings Parameter Symbol alue Unit Collectoremitter voltage BSP6 Collectorbase voltage BSP6 CEO CBO 90 Emitterbase voltage EBO Collector current I C 1 A Peak collector current I CM Base current I B 0 ma Total power dissipation P tot 1. W T S 1 C Junction temperature T j C Storage temperature T stg 6... 1 Pbcontaining package may be available upon special request 1 00706
BSP6 Thermal Resistance Parameter Symbol alue Unit Junction soldering point 1) R thjs 17 K/W Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol alues Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage I C = ma, I B = 0, I C = ma, I B = 0, I C = ma, I B = 0, BCP6 (BR)CEO Collectorbase breakdown voltage (BR)CBO I C = 0 µa, I E = 0, I C = 0 µa, I E = 0, I C = 0 µa, I E = 0, BSP6 90 Emitterbase breakdown voltage I E = 0 µa, I C = 0 Collectoremitter cutoff current CE = CE0max, BE = 0 Emitterbase cutoff current EB =, I C = 0 DC current gain ) I C = ma, CE = I C = 00 ma, CE = Collectoremitter saturation voltage ) I C = 00 ma, I B = 0. ma I C = 1 A, I B = 1 ma Base emitter saturation voltage ) I C = 00 ma, I B = 0. ma I C = 1 A, I B = 1 ma AC Characteristics Transition frequency I C = 0 ma, CE =, f = 0 MHz (BR)EBO I CES µa I EBO µa h FE CEsat BEsat 00 000 1. 1.8 1.9. f T 00 MHz 1 For calculation of R thja please refer to Application Note Thermal Resistance Pulse test: t < 00µs; D < % 00706
BSP6 Switching time test circuit Switching time waveform 0 % 90% in % out 90% 90% CC t d % t on t r t s t off t f EHN00068 00706
BSP6 DC current gain h FE = ƒ(i C ) CE = Collectoremitter saturation voltage I C = ƒ( CEsat ), I B = Parameter BSP...6 EHP00667 BSP...6 EHP00669 h FE ma Ι C Ι B = 0. ma ma 1 ma Baseemitter saturation voltage I C = ƒ( BEsat ), I B = Parameter Ι C 1 0 1 Transition frequency f T = ƒ(i C ) CE =, f = 0 MHz CE sat BSP...6 EHP00670 BSP...6 EHP00668 Ι C ma f T MHz Ι B = 0. ma ma 1 0 1 BE sat 1 ma 1 Ι C 00706
BSP6 Collectorbase capacitance C cb = ƒ( CB ) Emitterbase capacitance C eb = ƒ( EB ) Total power dissipation P tot = ƒ(t S ) pf 1 mw CCB(CEB) 18 16 1 CEB Ptot 10 100 0 1 900 70 0 8 0 6 00 CCB 0 8 1 16 CB ( EB ) 0 0 1 0 7 90 10 C T S Permissible Pulse Load P totmax /P totdc = ƒ(t p ) P P tot max tot DC BSP...6 t p = D T t p T EHP007 External resistance R BE = ƒ (T A )** CB = CEmax ** R BEmax for thermal stability R BE Ω 7 BSP...6 EHP00666 1 D = 0 0.00 0.01 0.0 0.0 0.1 0. 0. 6 0 6 s 0 t p 0 0 0 C T A 00706
Package SOT BSP6 Package Outline A 6. ±0. ±0.1 0.1 MAX. 1.6±0.1 7±0. 1 MAX.. ±0. B 1 Foot Print 0.7 ±0.1 0. M A.6.. 0. MIN. 0. M 0.8 0... B ±0.0 1..8 1. Marking Layout (Example) 1. 1.1 Manufacturer 00, CW Date code (YYWW) BCP16 Type code Pin 1 Packing Reel ø1 mm = 1.000 Pieces/Reel Reel ø0 mm =.000 Pieces/Reel 8 0. MAX. 7. 1 Pin 1 6.8 1.7 6 00706
BSP6 Edition 0001 Published by Infineon Technologies AG 8176 München, Germany Infineon Technologies AG 007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 00706