Description: MLCC consists of a conducting material and electrodes. To manufacture a chip-type SMT and achieve miniaturization, high density and high efficiency, ceramic condensers are used. WTC RF series MLCC is used at high frequencies generally have a small temperature coefficient of capacitance, typical within the ±3ppm/ C required for NP (CG) classification and have excellent conductivity internal electrode. Thus, WTC RF series MLCC will be with the feature of low ESR and high Q characteristics. Features: High Q and low ESR performance at high frequency. Ultra low capacitance to.. Can offer high precision tolerance to ±.5pF. Quality improvement of telephone calls for low power loss and better performance. Applications: Telecommunication products & equipments: Mobile phone, WLAN, Base station. RF module: Power amplifier, VCO. Tuners. How To Order: MRF Multicomp RF = Ultra High Q & Low ESR 5 N J 5 C T Size Dielectric Capacitance Tolerance Rated Voltage Termination 3 = 2 (63) 5 = 42 (5) 8 = 63 (68) 2 = 85 (22) N = NP Two significant digits followed by no. of zeros. And R is in place of decimal point. eg.: R5 =.5pF R = = = pf A = ±.5pF B = ±. C = ±.25pF D = ±.5pF F = ±% G = ±2% J = ±5% Two significant digits followed by no. of zeros. And R is in place of decimal point. 6R3 = 6.3V DC = V DC 25 = 25V DC 5 = 5V DC = V DC 25 = 25V DC 5 = 5V DC C = Cu/Ni/Sn Packaging style T = 7" reeled G = 3" reeled External Dimensions: M 8 M 8 L W T Size Inch (mm) L (mm) W (mm) T (mm)/symbol Remark MB (mm) 2 (63).6 ±.3.3 ±.3.3 ±.3 L #.5 ±.5 42 (5) ±.5.5 ±.5.5 ±.5 N #.25 +.5/-. 63 (68).6 ±..8 ±..8 ±.7 S -.4 ±.5 85 (22) 2 ±.2.25 ±.2.8 ±. T -.5 ±.2 The outline of MLCC # Reflow soldering only is recommended. Page <> 3/5/4 V.
General Electrical Data: Dielectric NP Size 2, 42, 63, 85 Capacitance* Capacitance tolerance Rated voltage (WVDC) 2:. to 33pF; 42:. to pf; 63:.3pF to 47pF; 85:.3pF to pf Cap 5pF: A (±.5pF ), B (±.), C (±.25pF) 5pF <Cap <pf: B (±.), C (±.25pF), D (±.5pF) Cap pf: F (±%), G (±2%), J (±5%) 6.3V, V, 25V, 5V, V, 25V, 5V Q* Cap 3pF, Q ; Cap <3pF,Q 4 +2C Insulation resistance at Ur Operating temperature Capacitance change Termination GΩ or R C Ω-F whichever is smaller. -55 C to +25 C ±3ppm/ C; 2 Cap 22pF, ±6ppm/ C Ni/Sn (lead-free termination) * Measured at the conditions of 25 C ambient temperature and 3~7% related humidity. Apply.±.2Vrms,.MHz±% for Cap pf and.±.2vrms,.khz±% for Cap>pF. Packaging Dimension and Quantity: Size Thickness (mm)/symbol Paper tape 7" reel 3" reel 2 (63).3 ±.3 L 5k 7k 42 (5).5 ±.5 N k 5k 63 (68).8 ±.7 S 4k 5k 85 (22).85±. T 4k 5k Unit : pieces Electrical Characteristics: RF5, NP, 5V.5pF. 3.3pF 6.8pF.,, Frequency (MHz ) ESR vs. Frequency Page <2> 3/5/4 V.
, RF5, NP, 5V, Q.5pF 6.8pF,, Frequency (MHz) Q vs. Frequency,, RF5, NP, 5V,,.5pF 3.3pF 6.8pF,, Frequency (MHz) Impedance vs. Frequency Page <3> 3/5/4 V.
Self resonance frequency (GHz) 3 25 2 5 5 RF3, NP, 25V Measured data (<8.5GHz) Simulation data Self resonance frequency (GHz) 25 2 5 5 RF5, NP, 5V Measured data (<8.5GHz) Simulation data. Capacitance (pf). Capacitance (pf) Self resonance frequency vs. Capacitance (2 size) Self resonance frequency vs. Capacitance (42 size) RF 3, NP, 2 5V C om pa riso n RF 5, NP, 5 V C om pa riso n.5pf.5p F -2-2 S (db) -4-6 2pF S (db) -4-6 2pF -8-8 -. Frequency (GHz ) -. Freq uenc y (G Hz ) S vs. frequency. (2 size) S vs. frequency. (42 size) RF3, NP, 25V Comparison RF 5, NP, 5V Comparison 2pF 2pF -2-2.5pF.5pF S2 (db) -4-6 S2 (db) -4-6 -8-8 -. Frequency (GHz) -. Frequency (GHz) S2 vs. frequency. (2 size) S2 vs. frequency. (42 size) Page <4> 3/5/4 V.
Reliability Test Conditions and Requirements: No Item Test Condition Requirements Visual and Mechanical 2 Capacitance 3 4 Q/ D.F. (Dissipation Factor) Dielectric Strength - ±.2Vrms, MHz ±% At 25 C ambient temperature. To apply voltage: V, 25% of rated voltage. Duration: to 5 sec. Charge and discharge current less than 5mA. To apply voltage: 2V~3V 2 times V DC 5V~999V.5 times V DC V~3V.2 times V DC Cut-off, set at ma TEST = 5 sec. RAMP = No remarkable defect. Dimensions to conform to individual specification sheet. Shall not exceed the limits given in the detailed spec. Cap 3pF, Q ; Cap <3pF, Q 4 +2C No evidence of damage or flash over during test. 5 6 7 8 Insulation Resistance Temperature Coefficient Adhesive Strength of Termination Vibration Resistance 9 Solderability V : To apply rated voltage 5. Insulation for Max. 2 sec. 2V :To apply rated voltage (5V Max.) for 6 sec. With no electrical load. Operating temperature: -55 C ~ 25 C at 25 C Pressurizing force : 2: 2N 42 & 63: 5N >63: N Test time: ± sec. Vibration frequency: ~55 Hz/min. Total amplitude:.5mm Test time: 6 hrs. (Two hrs each in three mutually perpendicular directions.) at room temp. for 24 ±2 hrs. Solder temperature: 235 ±5 C Dipping time: 2 ±.5 sec. GΩ or R C Ω -F whichever is smaller Capacitance change: within ±3ppm/ C; 2Cap 22pF, within ±6ppm/ C No remarkable damage or removal of the terminations. Cap change and Q/D.F.: To meet initial spec. 95% Min. coverage of all metalized area. Page <5> 3/5/4 V.
No Item Test Condition Requirements. Bending Test 2 3 4 Resistance to Soldering Heat Temperature Cycle Humidity (Damp Heat) Steady State Humidity (Damp Heat) Load The middle part of substrate shall be pressurized by means of the pressurizing rod at a rate of about mm per second until the deflection becomes mm and then the pressure shall be maintained for 5± sec. at room temp. for 24±2 hrs. Solder temperature: 26±5 C Dipping time: ± sec Preheating: 2 to 5 C for minute before immerse the capacitor in a eutectic solder. only): Perform 5+/- C for hr and then set for 24±2 hrs at room temp. at room temp. for 24±2 hrs. Conduct the five cycles according to the temperatures and time. Step Temp. ( C) Time (min.) Min. operating temp. +/-3 3 ±3 2 Room temp. 2~3 3 Max. operating temp. +3/- 3 ±3 4 Room temp. 2~3 only): Perform 5 +/- C for hr and then set for 24 ±2 hrs at room temp. at room temp. for 24 ±2 hrs. Test temp.: 4±2 C Humidity: 9% ~ 95% RH Test time: 5+24/-hrs. only): Perform 5+/- C for hr and then set for 24±2 hrs at room temp. at room temp. for 24±2 hrs. Test temp.: 4±2 C Humidity: 9% ~ 95%RH Test time: 5 +24/- hrs. To apply voltage : rated voltage only): To apply test voltage for hr at 4 C and then set for 24 ±2 hrs at room temp. at room temp. for 24 ±2 hrs. Cap change: within ±5.% or ±.5pF whichever is larger. (This capacitance change means the change of capacitance under specified flexure of substrate from the capacitance measured before the test.) Cap change: within ±2.5% or ±.25pF whichever is larger. Q/D.F., I.R. and dielectric strength: To meet initial requirements. 25% Max. leaching on each edge. Cap change: within ±2.5% or ±.25pF whichever is larger. Q/D.F., I.R. and dielectric strength: To meet initial requirements. Cap change: within ±5.% or ±.5pF whichever is larger. Q/D.F. value: Cap 3pF, Q 35; pf Cap <3pF, Q 275 +2.5C Cap <pf; Q 2 +C I.R.: GΩ. Cap change: within ±7.5% or ±.75pF whichever is larger. Q/D.F. value: Cap 3pF, Q 2; Cap <3pF, Q +/3C I.R.: 5MΩ. Page <6> 3/5/4 V.
No Item Test Condition Requirements 5 High Temperature Load (Endurance) Test temp.: 25±3 C * To apply voltage: () V %Ur<5V: 2% of rated voltage. (2) % 6.3V or 5V: 5% of rated voltage. (3) Ur ^63V: 2% of rated voltage. Test time: +24/- hrs. only): To apply test voltage for hr at test temp. and then set for 24 ±2 hrs at room temp. at room temp. for 24 ±2 hrs Cap change: within ±3.% or ±.3pF whichever is larger. Q/D.F. value: Cap 3pF, Q 35 pf Cap <3pF, Q 275 +2.5C Cap <pf, Q 2 +C * I.R.: GΩ. 6 ESR The ESR should be measured at room temperature and tested at frequency ±.GHz. The ESR should be measured at room temperature and tested at frequency 5 ±5 MHz. 2 42. Cap : < 35mΩ. Cap : < 35mΩ <Cap 5pF: < 3mΩ <Cap 5pF: < 3mΩ 5pF <Cap 22pF: < 25mΩ 5pF <Cap pf: < 25mΩ 63 85.3pF Cap : <,5mΩ.3pF Cap : <,5mΩ <Cap pf: < 25mΩ <Cap pf: < 25mΩ pf <Cap pf: < 2mΩ Cap >pf: < 2mΩ 2, 22pF Cap 33pF: < 3mΩ Appendixes Tape & Reel Dimensions The dimension of paper tape Size 2 42 63 85 Thickness L N S T A.37 ±.3.62 ±.5 +.5/-..5 ±. B.67 ±.3.2 ±.5.8 ±. 2.3 ±. T.42 ±.3.6 ±.5.95 ±.5.95 ±.5 K - - - - W 8 ±. 8 ±. 8 ±. 8 ±. P 4 ±. 4 ±. 4 ±. 4 ±. P 4 ±. 4 ±. 4 ±.2 4±.2 P 2 ±.5 2 ±.5 4 ±. 4 ±. P 2 2 ±.5 2 ±.5 2 ±.5 2 ±.5 D.55 ±.5.55 ±.5.55 ±.5.55 ±.5 D - - - - E.75 ±.5.75 ±.5.75 ±.5.75 ±.5 F 3.5 ±.5 3.5 ±.5 3.5 ±.5 3.5 ±.5 Page <7> 3/5/4 V.
Size 2, 42, 63, 85 Reel size 7" 3" C 3 +.5/-.2 3 +.5/-.2 W 8.4 +.5/- 8.4 +.5/- A 78 ± 33 ± N 6 +/- ± The dimension of reel Constructions: No. Name NP Ceramic material BaTiO3 based 2 Inner electrode Cu 3 Inner layer Cu 4 Termination Middle layer Ni 5 Outer layer Sn (Matt) The construction of MLCC * Partial NP items are with Ag/Ni/Sn(NME) terminations, please ref to product range for detail. Storage and handling conditions () To store products at 5 to 4 C ambient temperature and 2 to 7%. related humidity conditions. (2) The product is recommended to be used within one year after shipment. Check solderability in case of shelf life extension is needed. Cautions: a. The corrosive gas reacts on the terminal electrodes of capacitors, and results in the poor solderability. Do not store the capacitors in the ambience of corrosive gas (e.g., hydrogen sulfide, sulfur dioxide, chlorine, ammonia gas etc.) b. In corrosive atmosphere, solderability might be degraded, and silver migration might occur to cause low reliability. c. Due to the dewing by rapid humidity change, or the photochemical change of the terminal electrode by direct sunlight,the solderability and electrical performance may deteriorate. Do not store capacitors under direct sunlight or dewing condition. To store products on the shelf and avoid exposure to moisture. Page <8> 3/5/4 V.
Recommended Soldering Conditions: The lead-free termination MLCCs are not only to be used on SMT against lead-free solder paste, but also suitable against lead-containing solder paste. If the optimized solder joint is requested, increasing soldering time, temperature and concentration of N 2 within oven are recommended. Recommended reflow soldering profile for SMT process with SnAgCu series solder paste. Recommended wave soldering profile for SMT process with SnAgCu series solder. Important Notice : This data sheet and its contents (the Information ) belong to the members of the Premier Farnell group of companies (the Group ) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group s liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. Premier Farnell plc 22. Page <9> 3/5/4 V.