1PMT5920B Series. 3.2 Watt Plastic Surface Mount POWERMITE Package PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES VOLTS

Similar documents
MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

onlinecomponents.com

BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE

NTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88

MUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS

MMBF4391LT1, MMBF4392LT1, MMBF4393LT1. JFET Switching Transistors. N Channel. Pb Free Packages are Available.

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L. JFET - VHF/UHF Amplifier Transistor. N Channel

V N (8) V N (7) V N (6) GND (5)

MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon

NTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m

BC846ALT1 Series. General Purpose Transistors. NPN Silicon

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209. Silicon Tuning Diodes pf, 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES

BAT54XV2 Schottky Barrier Diode

NTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.)

NDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon

MUR405, MUR410, MUR415, MUR420, MUR440, MUR460

NTF6P02T3. Power MOSFET -6.0 Amps, -20 Volts. P-Channel SOT AMPERES -20 VOLTS R DS(on) = 44 m (Typ.)

NE522 High Speed Dual Differential Comparator/Sense Amp

BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.

NTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m

2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS

NTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM

MC74HC132A. Quad 2 Input NAND Gate with Schmitt Trigger Inputs. High Performance Silicon Gate CMOS

BC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

NL17SZ08. Single 2-Input AND Gate

2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

MMBT3906L, SMMBT3906L. General Purpose Transistor. PNP Silicon

2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS

MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes

2N3903, 2N3904. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS. THERMAL CHARACTERISTICS (Note 1)

MC3346. General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays

P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

SN74LS145MEL. 1 of 10 Decoder/Driver Open Collector LOW POWER SCHOTTKY

74HC of 8 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS

NLSV2T Bit Dual-Supply Inverting Level Translator

NL17SV16. Ultra-Low Voltage Buffer

NTQD6866R2G. Power MOSFET 6.9 Amps, 20 Volts N Channel TSSOP 8 Features. 6.9 AMPERES 20 VOLTS 30 V GS = 4.5 V

74HCT245. Octal 3-State Noninverting Bus Transceiver with LSTTL-Compatible Inputs. High-Performance Silicon-Gate CMOS

SN74LS132MEL. Quad 2 Input Schmitt Trigger NAND Gate LOW POWER SCHOTTKY

NL17SH02. Single 2-Input NOR Gate

SN74LS157MEL. Quad 2 Input Multiplexer LOW POWER SCHOTTKY

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G

2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS

LOW POWER SCHOTTKY. ESD > 3500 Volts. GUARANTEED OPERATING RANGES ORDERING INFORMATION V CC 8 7 GND

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

BSS84 P-Channel Enhancement Mode Field-Effect Transistor

NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V

S3A - S3N General-Purpose Rectifiers

NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V

NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj

2N7002DW N-Channel Enhancement Mode Field Effect Transistor

MC74AC132, MC74ACT132. Quad 2 Input NAND Schmitt Trigger

NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj

2N4403. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

NSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual

NL37WZ07. Triple Buffer with Open Drain Outputs

PN2907 / MMBT2907 PNP General-Purpose Transistor

NL27WZ08. Dual 2-Input AND Gate. The NL27WZ08 is a high performance dual 2 input AND Gate operating from a 1.65 V to 5.5 V supply.

NCS1002A. Constant Voltage / Constant Current Secondary Side Controller

NGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj

NGTB40N135IHRWG. 40 A, 1350 V V CEsat = 2.40 V E off = 1.30 mj

NTMFS4926NT3G. Power MOSFET 30 V, 44 A, Single N Channel, SO 8 FL

NTP45N06L, NTB45N06L. Power MOSFET 45 Amps, 60 Volts. Logic Level, N Channel TO 220 and D 2 PAK. 45 AMPERES, 60 VOLTS R DS(on) = 28 m

MC10E171, MC100E171. 5VНECL 3-Bit 4:1 Multiplexer

NLSV22T244. Dual 2-Bit Dual-Supply Non-Inverting Level Translator

Features. T A =25 o C unless otherwise noted

MC74VHC132. Quad 2 Input NAND Schmitt Trigger

NTMFD4C85N. PowerPhase, Dual N-Channel SO8FL. 30 V, High Side 25 A / Low Side 49 A

0.016 W/ C to +150 C

MC74AC138, MC74ACT of 8 Decoder/Demultiplexer

RS1A - RS1M Fast Rectifiers

LM4040, LM4041. Precision Micro-Power Shunt Voltage References

NL27WZ14. Dual Schmitt Trigger Inverter

FST Bit Bus Switch

NGTG25N120FL2WG. IGBT - Field Stop II. 25 A, 1200 V V CEsat = 2.0 V E off = 0.60 mj

2N4918-2N4920 Series. Medium-Power Plastic PNP Silicon Transistors 3.0 A, V, 30 W GENERAL PURPOSE POWER TRANSISTORS

SN74LS147, SN74LS Line to 4 Line and 8 Line to 3 Line Priority Encoders LOW POWER SCHOTTKY

74HC244 Octal 3 State Noninverting Buffer/Line Driver/ Line Receiver

NTB45N06L, NTBV45N06L. Power MOSFET 45 Amps, 60 Volts. Logic Level, N Channel D 2 PAK. 45 AMPERES, 60 VOLTS R DS(on) = 28 m

MC Bit Magnitude Comparator

MC10E163, MC100E163. 5VНECL 2-Bit 8:1 Multiplexer

PZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT

MC100LVE VНECL 16:1 Multiplexer

NL27WZ00. Dual 2 Input NAND Gate L1 D

NL27WZ08. Dual 2-Input AND Gate. The NL27WZ08 is a high performance dual 2 input AND Gate operating from a 1.65 V to 5.5 V supply.

NL17SHT08. 2-Input AND Gate / CMOS Logic Level Shifter

74FST Bit Bus Switch

MC74HC139A. Dual 1 of 4 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS

MC14049B, MC14050B. Hex Buffer

SN74LS151MEL. 8 Input Multiplexer LOW POWER SCHOTTKY

MC14070B, MC14077B CMOS SSI. Quad Exclusive OR and NOR Gates

Transcription:

PMT90B Series. Watt Plastic Surface Mount POWERMITE Package This complete new line of. Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE package has the same thermal performance as the SMA while being 0% smaller in footprint area and delivering one of the lowest height profiles (. mm) in the industry. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines and many other industrial/consumer applications. Features Zener Breakdown Voltage: 6. 47 V DC Power Dissipation:. W with Tab (Cathode) @ 7 C Low Leakage < A ESD Rating of Class (> 6 kv) per Human Body Model Low Profile Maximum Height of. mm Integral Heat Sink/Locking Tabs Full Metallic Bottom Eliminates Flux Entrapment Small Footprint Footprint Area of 8.4 mm Supplied in mm Tape and Reel T =,000 Units per Reel T =,000 Units per Reel Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes POWERMITE is JEDEC Registered as DO 6AA Cathode Indicated by Polarity Band Pb Free Packages are Available Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MOUNTING POSITION: Any MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 60 C for Seconds PLASTIC SURFACE MOUNT. WATT ZENER DIODES 6. 47 VOLTS CATHODE M xxb : CATHODE : ANODE POWERMITE CASE 47 PLASTIC MARKING DIAGRAM M xxb ANODE = Date Code = Specific Device Code (See Table on Page ) = Pb Free Package ORDERING INFORMATION Device Package Shipping PMT9xxBT POWERMITE,000/Tape&Reel PMT9xxBTG POWERMITE (Pb Free) PMT9xxBT PMT9xxBTG POWERMITE (Pb Free),000/Tape&Reel POWERMITE,000/Tape&Reel,000/Tape&Reel Individual devices are listed on page of this data sheet. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD80/D. Semiconductor Components Industries, LLC, 00 July, 00 Rev. Publication Order Number: PMT90B/D

PMT90B Series MAXIMUM RATINGS DC Power Dissipation @ T A = C (Note ) Derate above C Thermal Resistance, Junction to Ambient Rating Symbol Value Unit P D R JA 00 4.0 48 mw mw/ C C/W Thermal Resistance, Junction to Lead (Anode) R Janode C/W Maximum DC Power Dissipation (Note ) Thermal Resistance from Junction to Tab (Cathode) P D. R Jcathode Operating and Storage Temperature Range T J, T stg to +0 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. Mounted with recommended minimum pad size, PC board FR 4.. At Tab (Cathode) temperature, T tab = 7 C W C/W ELECTRICAL CHARACTERISTICS (T L = C unless otherwise noted, V F =. V Max. @ I F = 00 madc for all types) Symbol Parameter I F I V Z Reverse Zener Voltage @ I ZT I ZT Reverse Current Z ZT I ZK Maximum Zener Impedance @ I ZT Reverse Current V Z V R I R V F I ZT V Z ZK Maximum Zener Impedance @ I ZK I R V R I F V F Reverse Leakage Current @ V R Reverse Voltage Forward Current Forward Voltage @ I F Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (T L = 0 C unless otherwise noted, V F =. Volts @ 00 ma) Device* Device Marking Zener Voltage (Note ) V Z @ I ZT (Volts) I ZT I R @ V R V R (Note 4) Z ZT @ I ZT Z ZK @ I ZK (Note 4) Min Nom Max (ma) ( A) (V) ( ) ( ) (ma) PMT90BT, T,G 0B.89 6. 6. 60..0 4.0.0 00.0 PMT9BT, T,G B 6.46 6.8 7.4..0.. 00.0 PMT9BT, T,G B 7. 7. 7.88 0.0 6.0.0 400 0. PMT9BT, T,G B 7.79 8. 8.6 4.7.0 6.. 400 0. PMT94BT, T,G 4B 8.64 9. 9.6 4..0 7.0 4.0 00 0. PMT9BT, T,G B 9.. 7..0 8.0 4. 00 0. PMT97BT, T,G 7B.4.6..0 9. 6. 0 0. PMT99BT, T,G 9B 4..7.0.4 9.0 600 0. PMT90BT, T,G 0B. 6 6.8.4.0. 600 0. PMT9BT, T,G B 7. 8 8.9 0.8.0.7 60 0. PMT9BT, T,G B 0.9. 7.0 6.7 7. 60 0. PMT94BT, T,G 4B.8 4..6.0 8. 9 700 0. PMT9BT, T,G B.6 7 8..9.0 0.6 700 0. PMT96BT, T,G 6B 8. 0...0.8 8 70 0. PMT99BT, T,G 9B 7.0 9 40.9 9.6.0 9.7 4 900 0. PMT94BT, T,G 4B 44.6 47 49. 8.0.0.8 67 0 0.. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of C. 4. Zener Impedance Derivation Z ZT and Z ZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I Z (ac) = 0. I Z (dc) with the ac frequency = 60 Hz. * The G suffix indicates Pb Free package available. I ZK

PMT90B Series TYPICAL CHARACTERISTICS P D, MAXIMUM POWER DISSIPATION (W)... 0. 0 0 7 0 7 T, TEMPERATURE ( C) Figure. Steady State Power Derating T L I Z, ZENER CURRENT (ma) 0. 6 7 8 9 Figure. V Z to Volts I Z, ZENER CURRENT (ma) 0 0 0 0. 0. 0. 0. 0 0 0 40 0 60 70 80 90 Figure. V Z = thru 47 Volts VZ, TEMPERATURE COEFFICIENT (mv/ C) 8 6 4 0 V Z @ I ZT 4 4 6 8 Figure 4. Zener Voltage To Volts VZ, TEMPERATURE COEFFICIENT (mv/ C) 00 70 0 0 0 V Z @ I ZT 0 0 0 70 00 Figure. Zener Voltage 4 To 47 Volts Z Z, DYNAMIC IMPEDANCE (OHMS) 00 70 0 0 0 I Z(dc) = ma 7 ma 0 ma i Z(rms) = 0. I Z(dc) 7 0 0 0 70 Figure 6. Effect of Zener Voltage

PMT90B Series Z Z, DYNAMIC IMPEDANCE (OHMS) k 00 00 0 0 T J = C i Z(rms) = 0. I Z(dc) V V 6.8 V 0. 0 0 00 00 I Z, ZENER TEST CURRENT (ma) Figure 7. Effect of Zener Current,000 C, CAPACITANCE (pf) 0 MEASURED @ 0% V R MEASURED @ 0 V BIAS V Z, REVERSE ZENER VOLTAGE (VOLTS) Figure 8. Capacitance versus Reverse Zener Voltage 4

PMT90B Series OUTLINE DIMENSIONS POWERMITE CASE 47 04 ISSUE D A S C J F 0.08 (0.00) M T B S C S NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 98.. CONTROLLING DIMENSION: MILLIMETER.. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0. (0.006) PER SIDE. K R B J H T L TERM. TERM. D 0.08 (0.00) M T B S C S MILLIMETERS INCHES DIM MIN MAX MIN MAX A.7.0 0.069 0.08 B.7.8 0.069 0.086 C 0.8. 0.0 0.04 D 0.40 0.69 0.06 0.07 F 0.70.00 0.08 0.09 H 0.0 +0. 0.00 +0.004 J 0. 0. 0.004 0.0 K.60.90 0.4 0.4 L 0.0 0.80 0.00 0.0 R.0.0 0.047 0.09 S 0.0 REF 0.09 REF SOLDERING FOOTPRINT* 0.6 0.0.67 0. 0.76 0.00.4 0..7 0.00 SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

PMT90B Series POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Phoenix, Arizona 808 USA Phone: 480 89 77 or 800 44 860 Toll Free USA/Canada Fax: 480 89 7709 or 800 44 867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800 8 98 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguro ku, Tokyo, Japan 00 Phone: 8 77 80 6 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. PMT90B/D