DISCRETE SEMICONDUCTORS DATA SHEET BLW8 March 1993
BLW8 DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-a, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13, V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. The transistor is housed in a 1 4 " capstan envelope with a ceramic cap. QUICK REFERENCE DATA R.F. performance up to T h = C in an unneutralized common-emitter class-circuit. MODE OF OPERATION V CE V f MHz P L W c.w. 1, 47 4 > 8, > 6,1 + j,3 7 j6 c.w. 1, 17 4 typ. 1, typ. 6, j, 1 j48 G p db η % z i Ω Y L ms PIN CONFIGURATION PINNING - SOT1A. PIN DESCRIPTION 1 collector emitter 1 4 3 3 base 4 emitter Top view MBK187 Fig.1 Simplified outline. SOT1A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. March 1993
BLW8 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (V BE =) peak value V CESM max 36 V Collector-emitter voltage (open base) V CEO max 17 V Emitter-base voltage (open collector) V EBO max 4 V Collector current (d.c.) I C max 1 A Collector current (peak value); f > 1 MHz I CM max 3 A Total power dissipation (d.c. and r.f.) up to T mb = C P tot max 17 W Storage temperature T stg 6 to +1 C Operating junction temperature T j max C 1 I C (A) MGP938 3 P rf (W) MGP939 r.f. power dissipation V CE 16. V f > 1 MHz 1 T h = 7 C T mb = C short time operation during mismatch derate by.9 W/K 1 continuous operation 1 1 1 1 1 VCE (V) 1 T h ( C) Fig. D.C. soar. Fig.3 R.F. power dissipation. THERMAL RESISTANCE From junction to mounting base R th j-mb = 1,3 K/W From mounting base to heatsink R th mb-h =,6 K/W March 1993 3
BLW8 CHARACTERISTICS T j = C Breakdown voltages Collector-emitter voltage V BE =;I C =1mA V (BR)CES > 36 V Collector-emitter voltage open base; I C =ma V (BR)CEO > 17 V Emitter-base voltage open collector; I E = 4 ma V (BR)EBO > 4 V Collector cut-off current V BE = ; V CE =17V I CES < 4 ma D.C. current gain (1) I C =, A; V CE =V h FE > 1 typ 3 Collector-emitter saturation voltage (1) I C = 1, A; I B =,3 A V CEsat typ,7 V Transition frequency at f = MHz (1) I C =, A; V CE = 1, V f T typ 1,7 GHz I C = 1, A; V CE = 1, V f T typ 1, GHz Collector capacitance at f = 1 MHz I E =I e = ; V CB = 1, V C c typ 14 pf Feedback capacitance at f = 1 MHz I C = 4 ma; V CE = 1, V C re typ 7,1 pf Collector-stud capacitance C cs typ 1, pf Note 1. Measured under pulse conditions: t p µs; δ,. March 1993 4
BLW8 4 h FE 3 typ MGP6 V CE = V T j = C 3 C c (pf) MGP63 I E = I e = f = 1 MHz T j = C typ 1 1 1 3 I C (A) 1 V CB (V) Fig.4 Fig. handbook, full pagewidth f T (GHz) MGP64 V CE = 1. V f = MHz T j = C 1 typ 1 I C (A) 3 Fig.6 March 1993
BLW8 APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-b circuit) T h = C f (MHz) V CE (V) P L (W) P S (W) G p (db) I C (A) η (%) z i (Ω) Y L (ms) 47 1, 4 <,63 > 8, <,3 > 6,1 + j,3 7 j6 47 13, 4 typ 9, typ 6 17 1, 4 typ 1, typ 6, j, 1 j48 handbook, full pagewidth Ω C1 C L1 T.U.T. L L6 L7 C8 C7 Ω C3 C4 L C L3 R1 C6 R L4 +V CC MGP6 Fig.7 Class-B test circuit at f = 47 MHz. List of components: C1 =, pf (±, pf) ceramic capacitor C = C7 = C8 = 1,4 to, pf film dielectric trimmer (cat. no. 89 91) C3 =,6 pf (±, pf) ceramic capacitor C4 = to 9 pf film dielectric trimmer (cat. no. 89 9) C = 1 pf ceramic feed-through capacitor C6 = 1 nf polyester capacitor L1 = stripline (, mm 6, mm) L = 13 turns closely wound enamelled Cu wire (, mm); int. dia. 4 mm; leads mm L3 = L4 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 431 3664) L = 1 nh; 3, turns Cu wire (1 mm); int. dia. 6 mm; coil length 7 mm; leads mm L6 = stripline (1, mm 6, mm) L7 = 1 nh; 1 turn Cu wire (1 mm); int. dia. mm; leads mm L1 and L6 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (ε r =,74); thickness 1/16". R1 = R = 1 Ω (± %) carbon resistor Component layout and printed-circuit board for 47 MHz test circuit (Fig.8). March 1993 6
BLW8 11 handbook, full pagewidth 8 L3 C1 C3 L R1 rivet L7 C L1 L6 C8 C4 L C7 C R C6 L4 +V CC MGP66 The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets. Fig.8 Component layout and printed-circuit board for 47 MHz test circuit. March 1993 7
BLW8 1 P L (W) f = 47 MHz typical values T h = C MGP67 V CC = 1. V V CC = 13. V 1 G p (db) 1 f = 47 MHz T h = C typical values G p MGP68 1 V CC = 1. V V CC = 13. V η (%) 1 7 C η 1 P S (W) P L (W) 1 Fig.9 Fig.1 Conditions for R.F. SOAR 6. P Lnom (W) VSWR = 1 6. VSWR = 6 MGP69 P Snom 1 1.1 1. V CC 1.3 V CCnom 1 P S f = 47 MHz T h = 7 C R th mb-h =,6 K/W V CCnom = 1, V or 13, V P S =P Snom at V CCnom and VSWR = 1 measured in the circuit of Fig.7. The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other that the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio, with VSWR as parameter. The graph applies to the situation in which the drive (P S /P Snom ) increases linearly with supply over-voltage ratio. Fig.11 March 1993 8
BLW8 OPERATING NOTE Below 3 MHz a base-emitter resistor of 1 Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only. G p (db) MGP7 power gain versus frequency (class-b operation) 1 1 1 3 f (MHz) Measuring conditions: V CC = 1, V P L =4W T h = C typical values Fig.1 1 r i, x i (Ω) MGP71 input impedance (series components) versus frequency (class-b operation) R L (Ω) load impedance (parallel components) versus frequency (class-b operation) C L MGP7 1 C L (pf) 3 r i r i R L x i 18 x i 1 3 f (MHz) 16 1 7 3 f (MHz) Measuring conditions: V CC = 1, V P L =4W T h = C typical values Measuring conditions: V CC = 1, V P L =4W T h = C typical values Fig.13 Fig.14 March 1993 9
BLW8 PACKAGE OUTLINE Studded ceramic package; 4 leads SOT1A D ceramic BeO A Q metal c N 1 D 1 A N D w 1 M A M W N 3 X M 1 H detail X b L 4 α 3 H 1 1 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) N UNIT A b c D D 1 D H L M 1 M N 1 N 3 Q W max..97.8.18 7. 6.48 7.4 7.6 9.91 3.18 1.66 11.8 3.86 3.38 8-3 mm 1. 4.74.8.14 7.3 6. 6.93.78 9.14.66 1.39 11.4.9.74 UNC w 1.381 α 9 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT1A 97-4-18 March 1993 1
BLW8 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1993 11