DISCRETE SEMICONDUCTORS DATA SHEET August 1986
DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-a, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold sandwich metallization. The transistor is housed in a 1 4 " capstan envelope with a ceramic cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance up to T h = 25 C in an unneutralized common-emitter class-b circuit MODE OF OPERATION V CE V f MHz c.w. 28 47 4 > 11 > 55 P L W G p db η % PIN CONFIGURATION PINNING - SOT122A. PIN DESCRIPTION 1 collector 2 emitter 1 4 3 3 base 4 emitter 2 Top view MBK187 Fig.1 Simplified outline. SOT122A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); V BE = V CESM max. 6 V open base V CEO max. 3 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current d.c. or average I C ;I C(AV) max.,62 A (peak value); f > 1 MHz I CM max. 2, A Total power dissipation (d.c. and r.f.) up to T mb = 25 C P tot max. 18,6 W Storage temperature T stg 65 to + 15 C Operating junction temperature T j max. 2 C 1 MGP66 3 MGP661 I C (A) T mb = 25 C P tot (W) T h = 7 C 2 ΙΙ 1 Ι 1 1 1 1 1 2 V CE (V) 5 1 T h ( C) I Continuous d.c. and r.f. operation II Short-time operation during mismatch Fig.2 D.C. SOAR. Fig.3 Power derating curves vs. temperature. THERMAL RESISTANCE (dissipation = 6 W; T mb = 73,6 C, i.e. T h = 7 C) From junction to mounting base (d.c. and r.f. dissipation) R th j-mb = 9, K/W From mounting base to heatsink R th mb-h =,6 K/W August 1986 3
CHARACTERISTICS T j =25 C Collector-emitter breakdown voltage V BE = ; I C = 4 ma V (BR)CES > 6 V Collector-emitter breakdown voltage open base; I C = 2 ma V (BR)CEO > 3 V Emitter-base breakdown voltage open collector; I E = 2 ma V (BR)EBO > 4 V Collector cut-off current V BE = ; V CE = 3 V I CES < 2 ma Second breakdown energy; L = 25 mh; f = 5 Hz open base E SBO > 1 mj R BE =1Ω E SBR > 1 mj D.C. current gain (1) typ. 4 h FE I C =,3 A; V CE =5 V 1 to 1 Collector-emitter saturation voltage (1) I C = 1, A; I B =,2 A V CEsat typ.,9 V Transition frequency at f = 5 MHz (1) I E =,3 A; V CB = 28 V f T typ. 1,2 GHz I E = 1, A; V CB = 28 V f T typ.,9 GHz Collector capacitance at f = 1 MHz I E =I e =;V CB = 28 V C c typ. 8,4 pf Feedback capacitance at f = 1 MHz I C = 2 ma; V CE = 28 V C re typ. 3,6 pf Collector-stud capacitance C cs typ. 1,2 pf Note 1. Measured under pulse conditions: t p 2 µs; δ,2. August 1986 4
1 h FE MGP662 4 C c (pf) MGP663 75 3 5 V CE = 25 V 5 V 2 25 1 typ.5 1 1.5 I C (A) 1 2 3 V CB (V) Fig.4 Typical values; T j =25 C. Fig.5 I E =I e = ; f = 1 MHz; T j = 25 C. 2 f T (GHz) MGP664 1.5 typ 1.5.5 1 1.5 I E (A) Fig.6 V CB = 28 V; f = 5 MHz; T j = 25 C. August 1986 5
APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-b circuit); T h = 25 C f (MHz) V CE (V) P L (W) P S (W) G p (db) I C (A) η (%) z i (Ω) Z L (Ω) 47 28 4 <,32 > 11 <,26 > 55 1,7 + j1,8 8 + j26 47 28 4 typ.,23 typ. 12,5 typ.,25 typ. 58 handbook, full pagewidth 5 Ω C1 L1 T.U.T. L4 L6 C6 5 Ω C2 L2 L5 C5 R1 L3 C3 C4 R2 L7 +V CC MGP665 Fig.7 Test circuit; c.w. class-b. List of components: C1 = C5 = C6 = 1,4 to 5,5 pf film dielectric trimmer (cat. no. 2222 89 91) C2 = 2 to 9 pf film dielectric trimmer (cat. no. 2222 89 92) C3 = 1 pf feed-through capacitor C4 = 1 nf polyester capacitor L1 = stripline (34,8 mm 6, mm) L2 = 32 nh; 13 turns closely wound enamelled Cu wire (,5 mm); int. dia. 4 mm; leads 2 4 mm L3 = L7 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 2 3664) L4 = stripline (12, mm 6, mm) L5 = 265 nh; 13 turns closely wound enamelled Cu wire (,35 mm); int. dia. 3,5 mm; leads 2 4 mm L6 = 29 nh; 3 turns closely wound enamelled Cu wire (1 mm); int. dia. 3,5 mm; leads 2 4mm L1 and L4 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (ε r = 2,74); thickness 1/16". R1 = 1 Ω carbon resistor R2 = 1 Ω carbon resistor Component layout and printed-circuit board for 47 MHz test circuit are shown in Fig.8. August 1986 6
94 handbook, full pagewidth rivet 48 strap L3 R1 C3 C4 L7 +V CC C1 L2 L5 L6 R2 C6 L1 L4 strap C2 C5 MGP666 Fig.8 Component layout and printed-circuit board for 47 MHz test circuit. The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. August 1986 7
1 MGP667 15 MGP668 P L (W) G p (db) 1 G p 1 5 typ η (%) η 5 5.5 P 1 S (W) 5 1 P L (W) Fig.9 V CE = 28 V; f = 47 MHz; T h =25 C. Fig.1 Typical values; V CE = 28 V; f = 47 MHz; T h = 25 C. August 1986 8
5 MGP669 5 MGP67 r i, x i (db) r i R L,X L (Ω) X L x i 25 R L 5 2 3 4 f (MHz) 5 2 3 4 f (MHz) 5 Typical values; V CE = 28 V; P L = 4 W; T h =25 C. Typical values; V CE = 28 V; P L = 4 W; T h =25 C. Fig.11 Input impedance (series components). Fig.12 Load impedance (series components). 3 G p (db) MGP671 Ruggedness The is capable of withstanding full load mismatch (VSWR = 5 through all phases) up to 4 W under the following conditions: V CE = 28 V; f = 47 MHz; T h =7 C; R th mb-h =,6 K/W. 2 1 1 2 3 4 5 f (MHz) Typical values; V CE = 28 V; P L = 4 W; T h =25 C. Fig.13 August 1986 9
PACKAGE OUTLINE Studded ceramic package; 4 leads SOT122A D ceramic BeO A Q metal c N 1 D 1 A N D 2 w 1 M A M W N 3 X M 1 H detail X b L 4 α 3 H 1 2 5 1 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) N UNIT A b c D D 1 D H L M 1 M N 1 2 N 3 Q W max. 5.97 5.85.18 7.5 6.48 7.24 27.56 9.91 3.18 1.66 11.82 3.86 3.38 8-32 mm 1.2 4.74 5.58.14 7.23 6.22 6.93 25.78 9.14 2.66 1.39 11.4 2.92 2.74 UNC w 1.381 α 9 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT122A 97-4-18 August 1986 1
DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 11