Korean J. Crystallography Vol. 11, No. 4, pp.207~211, 2000 LG, Relation Between the Growth Twin and the Morphology of a Czochralski Silicon Single Crystal Bong Mo Park LG Siltron Inc., 283, Imsoo-dong, Kumi, Kyungbuk, 730-350, Korea.!" #$ %& {111} ' ()(faset) * +," -.& / 01". <100> {111} " #',! /2 /$ 34# 5, "6 90 o 78 9: ; /$ 33 o 7< /2 ()=> #?, @A B 9: /$ CD#' C EFG H <. "IJ /$ {111} ' KLG M N #O> PQRST J {111} ' KL ULV=>W + H XYZ [ 9. Abstract In a Czochralski silicon single crystal, the relation between the growth twin and the crystal morphology was investigated. The growth twin is nucleated on the {111} facet planes near the growth ridges. When a {111} growth twin is formed in the <100> silicon crystal, the growth ridge where twin is nucleated will continuous through the twin plane. Other two ridges at the 90 o apart will be displaced about 33 o and be deformed to facets. The ridge on the opposite side of twin nucleation will disappear by forming a slight hill. Because the growth ridges of silicon is due to the {111} planes, the variation in the growth ridge formation can be predicted clearly by considering the change of the {111} plane traces in the stereographic projection after twining. 1. (twin).,! " # $ %& '((dislocation)) *+, -. /01 / 2 34, 5. 678 %9 :, ;(point defect), <(line defect), =(plane defect), > (volume defect) $?2 @,AB, :C D(stacking fault)e F GH8 = I J K. L MN OP4 C AQ, 1-5)! OR STU V W X YZ.![, MN \] K,., ^J I J K. _C ]` # a ObR(spontaneous nucleation)c ]1 # d R ST W Xe?f, # gh gi +j ku $c l: Rc., m no L p,q.![, Gr 207
208 c #dsc (: t(seed crystal)c ] uv R >U w x.y J K?z 2, _V{ s ae } t c ]1 # d R!~ A X. ƒ {111} # ORy J K? f, 6,7) [100] [111]?2 # _V{ s ƒ T! # gh {111} # r OP4CT 1.![ OR STU LA?z2 _V{ s ƒ r 1 3 " w. ˆ! OR STU " *T, G1 > Š # d :[ UA ŒE U $ L TŽ., _V{ s ƒ uv r Gr # d L ]1 B, # r d r GŠ Y š U., œ 3, _V{ s ƒ {111} # re r G: Š ž. 2. ƒ YŸ ) } 3g UAf (space group) Fd3m(No. 227) ",?2 {111} = A =?2 O 4 c ª" K. l ƒ # d, <100>?2 # TU «" <111>?2 # TU U# z2, 8) E?2 {111} = O 4m u I J K. _V{ s a 1 # 1 c ±C (:, #4 E TUZ i ²'d³?2 µ` G9 E?2.," K. [1 ²' E : # T (anisotropy).w4z2 _V{ s a 7 r #.?2 _V{ s a # T : O 4m" = ²' E : O 4A " U r¹2 Q ºC 4B, # A(ridge) 1. [1 # A #» G¼c ½¾. 9) _V{ s ƒ # A r {111} = O x. C8z2 {111} = c r., # c [100]? 2 = # A [011], [011], [011], [011] À?2 r. Á <100>?2 # _V{ s ƒ H= À  # AU 90 Ãc p= o r. 3. 67 2 = RÄ?2! (system) AU WYÅ.![, OR4 uv,! A ÆUU Ç2 VA " R 1 ÈÉ2Ê (entropy) ÆU ET K?z2 R ]1 uv I J K. Ë \o %ÌU 7 8 4 uvu L?, # d R4 u v! 78 %ša " 7 ÍÎ d v1 Ï" Œ?2 Š4 uvt L.!~ * 1) T, t9 OR Ç W u c ½Ë uvu L X. _V{ s a?2 #dð uv, LiNbO 3 ÑÒ # = C \o C 81 ÓÔ(slip) OR 1 C (mechanical twin) OR4CT 1. 4,10)![,? 2 tc Ï] _V{ s a # OP4A. ƒ uv, Õ'T Ö(cell) $ \]4" K œ- ƒ-(ribbon-growth silicon) <211> " {110}= J 1 R " K. _V{ s ƒ uv?2 Ø 6,7) Ù. 4A AQ, ÚÛ1 gh 4= # ORy JT K Ü?2 ÝmÞ K. ƒ {111} = ß1 ÓÔ= ŠÛ4f # = \o EI uv ÓÔ à O Ry J K?z2, ÓÔE ORc áâi J K?, r : %š 3%y J K. ƒ # aã(twin law) {111} 8 Ï(reflection twin) ŠÛ. # d R4 3g(structural twin)f, 3=
11 4, 2000! 209 (composition plane) {111} =8 äå(contact twin) ŠÛ. æ 3g ª uv 3/-²' G¼c ª <111> J 1 wç= (mirror) G¼ :4, K?z2 {111} r Uè1B, 1) ƒe } 3g ª Y Ÿ 5)) é2ê ëé(perovskite) 3g ª 2,3) BaTiO 3 $ {111} rc! ì2 í J K. ÓÔ uv, 2 # = \o C8: OR4f, = R4C dî1 ÓÔ {111} =c # Ë2 Å 4U 3âo ïð4=!g2 A1 ñ2 ºYK. [1 ÓÔ # H= ò1 ÓÔ< Qc º Cf r G1 Ø &CdsA 1. =, # uv, {111} =Œ br 4f, R» Ú% # åå4z2 #4?2 Å. 11) Á, # = R ó 'ô4 ÓÔ E G" I J K. _V{ s ƒ # d # = l õ?2 öˆ1 Œc U Az2, b R4C (1 {111} = øù (faset) O y ú U# W û # AU K ü Ú% ŠÛ. Fig. 1(a) A Ú % ½¾ ÜÑÒ, # AU K 1 ý; br4= = 0 #(twin plane reentrant growth) C3 : G X ýþa ÿ' Å. =?2 % Ú%c 11) %(twin domain) B, %(I)E %(II) aã 1 G¼ Í (orientation)c ª., ) } # r4=, R ; Ú ß '> #, 4, Œ?2 Ï]I J. 4. Fig. 1 _V{ s ƒ # R4ec r 1 Ü. A Hd # A br 4ec = '> U2 [ r. H= ÓÔ<ÑÒ ò1 < Fig. 1. The {111} growth twin of Czochralski silicon crystal of 200 mm diameter, (a) the schematic diagram of growth twin geometry, (b) the photograph of the region A, (c) the photograph of the back-side of the region B, and (d) the photograph of the front-side of the region B. º.![, = Y %(II) %(I)E» Í c ª 4z2 # A () ü. R d ;8 Fig. 1 A # A Fig. 1(b) ÑÒ A ( r¹u w.! [, B õ = ÏÅ8 Fig. 1(c)) (d) =, %(I) Ëm # A =E 6A; /4"!û?2Ú ò 33 T ( A; øù Œ o ½.! ", A G õ # A ÏA= %(II) Y -(hill) ü?2 rä. %(I)E %(II) G 1 # A ÍÎ Fig. 2 T?2 ½Ëe. {111} R : _V{ s ƒ r Ü '?2 %(II) C81. Fig. 3 Fig. 1(a) {111} G1 æ (Ì Í
210 Fig. 2. The geometries of the growth ridges, (a) for the twin domain (I) and (b) for the twin domain (II) in Fig. 1(a). ½¾ Ü. %(II) (Ì {111} =c /?2 %(I) (Ì) wç= G¼c pz2, %(II) %(I)2Ú [100] c 70.52 Cç8?2 #Äc o 1. %(I) # c [100] I ŠÛ T(stereographic projection) Fig. 4(a)) } ½Ë,Å. :C, # A {111} = c r4z2, H= [011], [011], [011], [011] À c AU Qí,Å. %(II) T Fig. 4(b)) } ½Ë,A B, (a) T [100] c [011] õ?2 70.52 o Cç8 uv Š Û. ~ 4=, (a) (111) =;(plane pole)e } ( (b) (111) =; ½z 2 õ?2 # AU ry J K.![ (a) A C A Ø U RC. (111) = # = * Fig. 3. The configuration of cubic unit cells in the {111} twin, (a) overview, (b) top-view, and (c) sideview. 1 r¹2 ÍÎ4C Ù # A r C:A 4", (111) =E (111) = # = g * J 1 r¹2 ÍÎ4C Ù # A øùc r u Š Å. E?2, [100]?2 #4 _V{ s ƒ (111) = # r4=, (111) 1 # A 4 =, (111)E (111) 1 # A / 4= ò 33 ( û o øù r¹2 ½. (111) =; # = õc A 4, * Œ # A r V C:A G Ú% ò µc 4 -c r Q.
11 4, 2000! 211 # A () ü. <100> # ƒ {111} # OR=, br A; # A 4f, ) 90 o ( K # A 33 ( A; øù? o 2 r4", G X K # A ïð4= ï -c r. [1 # A {111} = c r4z2 r 1 {111} =?2 ì I J K. _V{ s ƒ # A C ÍÎ ü $ Œ # :Ú 6 C 4" K?z2, ŒE } Œc Š Ü [1 = ]!]y J K c Ü. Fig. 4. The stereographic projections, (a) for the twin domain (I) and (b) for the twin domain (II) in Fig. 1(a) and Fig. 3. The traces of the {111} planes reveal the positions of the growth ridges. 4. [100]?2 # _V{ s ƒ {111} # re r G: Š ž. _V{ s ƒ # uv, b R4 û {111} = øù(faset) O ú U# W # A Ú%f, # AU K 1 ý; br4= = 0 # (twin plane reentrant growth) C3 : G X ýþa ÿ' Å. H= ÓÔ <ÑÒ ò1 < º 4", = Y % 7)» Í c ª 4z2 1) Bloss, F. D., Crystallography and Crystal Chemistry, p. 325, Holt, Rinehart and Winston, Inc., New York (1971). 2) Park, B. M. and Chung, S. J., Korean J. Cryst., 3(2), 120 (1992). 3) Park, B. M. and Chung, S. J., Integrated Ferroelectrics, 12, 275 (1996). 4) Park, B. M., Kitamura, K., Terabe, K., Furukawa, Y., Ji, Y. and Suzuki, E., J. Cryst. Growth, 180, 101 (1997). 5) Lee, Y. S., Park, Y. H., Lee, T. K. and Chung, S. J., J. Kor. Ceram. Soc., 29(12), 926 (1992). 6) Ravi, K. V., J. Cryst. Growth, 39, 1 (1977). 7) Gleichman, R., Cunningham, B. and Ast, D. G., J. Appl. Phys., 58, 223 (1985). 8) Ciszek, T. F., J. Electrochem. Soc., 132, 422 (1985). 9) Nassau, K., Levinstein, H. J. and Loiacono, G. M., J. Phys. Chem. Solids, 27, 983 (1966). 10) Park, B. M., Kitamura, K., Terabe, K., Furukawa, Y. and Suzuki, E., Phil. Mag. Lett., 77(1), 17 (1998). 11) Elwell, D. and Scheel, H. J., Crystal Growth from High temperature Solutions, p. 222, Academic Press, New York (1975).