NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package Qualified according AE Q Type Marking Pin onfiguration Package BW66KF BW66KG BW66KH EFs EGs EHs =B =B =B =E =E =E = = = SOT SOT SOT Maximum Ratings Parameter Symbol Value Unit ollectoremitter voltage V EO 4 V ollectorbase voltage V BO 7 Emitterbase voltage V EBO ollector current I 8 ma Peak collector current, t p ms I M A Base current I B ma Peak base current I BM Total power dissipation P tot mw T S Junction temperature T j Storage temperature T stg 6... Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 7 K/W 9
Electrical haracteristics at T A =, unless otherwise specified Parameter Symbol Values Unit min. typ. max. D haracteristics ollectoremitter breakdown voltage I = ma, I B = ollectorbase breakdown voltage I = µa, I E = Emitterbase breakdown voltage I E = µa, I = ollectorbase cutoff current V B = 4 V, I E = V B = 4 V, I E =, T A = Emitterbase cutoff current V EB = V, I = D current gain ) I = µa ma, V E = V, hfegrp.f I = µa ma, V E = V, hfegrp.g I = µa ma, V E = V, hfegrp.h I = ma, V E = V, hfegrp.f I = ma, V E = V, hfegrp.g I = ma, V E = V, hfegrp.h I = ma, V E = V, hfegrp.f, G, H V (BR)EO 4 V V (BR)BO 7 V (BR)EBO I BO. µa I EBO na h FE 7 8 6 4 6 4 6 ollectoremitter saturation voltage ) V Esat V I = ma, I B = ma. I = ma, I B = ma.4 Base emitter saturation voltage ) V BEsat I = ma, I B = ma. I = ma, I B = ma. For calculation of R thja please refer to Application Note AN77 (Thermal Resistance alculation) Pulse test: t < µs; D < % 9
Electrical haracteristics at T A =, unless otherwise specified Parameter Symbol Values Unit min. typ. max. A haracteristics Transition frequency f T 7 MHz I = ma, V E = V, f = MHz ollectorbase capacitance cb pf V B = V, f = MHz Emitterbase capacitance V EB =. V, f = MHz eb 4 9
D current gain h FE = ƒ(i ) V E = V ollectoremitter saturation voltage I = ƒ(v Esat ), h FE = BW 6/66 EHP96 BW 6/66 EHP9 h FE Ι ma ma Baseemitter saturation voltage I = ƒ(v BEsat ), h FE = Ι 4 6 mv 8 V E sat ollector cutoff current I BO = ƒ(t A ) V B = V Emax ma Ι BW 6/66 EHP94 Ι B na BW 6/66 4 EHP9 max typ V 4 V BE sat T A 4 9
Transition frequency f T = ƒ(i ) V E = V ollectorbase capacitance cb = ƒ(v B ) Emitterbase capacitance eb = ƒ(v EB ) MHz f T BW 6/66 EHP9 Ι ma RTF 7 pf 6 4 4 EB B 4 6 8 4 6 V RTF Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load P totmax /P totd = ƒ(t p ) BW 6/66 EHP9 4 P P tot max tot D t p = D T t p T 4 4 6 7 9 6 D =....... 4 s t p 9
Package SOT BW66K Package Outline +. ).4..9 ±..9 B.9.4 ±.. MIN. MAX. ±.. MAX....8 MAX..8.... ±. A. M B. M A Foot Print ) Lead width can be.6 max. in dambar area.8.8..9..9 Marking Layout (Example) EH s Manufacturer, June Date code (YM) Pin BW66 Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.9. 8..6 Pin.. 6 9
Edition 96 Published by Infineon Technologies AG 876 Munich, Germany 9 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 9