Rev. 24 March 29 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. This type is a selection of the 2N72 by the parameter V GS(th)..2 Features Logic level threshold compatible Surface-mounted package Very fast switching TrenchMOS technology.3 Applications Logic level translator High-speed line driver.4 Quick reference data V DS 6 V R DSon 5 Ω I D 3 ma P tot.83 W 2. Pinning information Table. Pinning Pin Description Simplified outline Graphic symbol gate (G) 2 source (S) 3 3 drain (D) 2 D G mbb76 S
3. Ordering information 4. Marking Table 2. Ordering information Type number Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 5. Limiting values Table 3. Marking codes Type number Marking code [] RN* [] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 634). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage 25 C T j 5 C - 6 V V DGR drain-gate voltage 25 C T j 5 C; - 6 V R GS =2kΩ V GS gate-source voltage - ±3 V V GSM peak gate-source voltage t p 5 µs; pulsed; duty cycle = 25 % - ±4 V I D drain current T sp =25 C; V GS =V; - 3 ma see Figure 2 and 3 T sp = C; - 9 ma V GS = V; see Figure 2 I DM peak drain current T sp =25 C; pulsed; -.2 A t p µs; see Figure 3 P tot total power dissipation T sp =25 C; -.83 W see Figure T stg storage temperature 65 +5 C T j junction temperature 65 +5 C Source-drain diode I S source current T sp =25 C - 3 ma I SM peak source current T sp =25 C; pulsed; t p µs -.2 A _ Product data sheet Rev. 24 March 29 2 of
2 3aa7 2 3aa25 P der (%) I der (%) 8 8 4 4 5 5 2 T sp ( C) 5 5 2 T sp ( C) P der P tot I D = ------------------------ % I P der = -------------------- % I tot ( 25 C ) D25 ( C ) Fig. Normalized total power dissipation as a function of solder point temperature Fig 2. Normalized continuous drain current as a function of solder point temperature 3aab35 I D (A) Limit R DSon = V DS / I D t p = µs µs - DC ms ms ms -2 2 V DS (V) Fig 3. T sp =25 C; I DM is single pulse Safe operating area; continuous and peak drain currents as a function of drain-source voltage _ Product data sheet Rev. 24 March 29 3 of
6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-sp) thermal resistance from junction to solder point see Figure 4 - - 5 K/W R th(j-a) thermal resistance from junction to ambient [] - - 35 K/W [] Mounted on a Printed-Circuit Board (PCB); minimum footprint; vertical in still air. 3 3aab35 Z th(j-sp) (K/W) 2 δ =.5.2..5 P t p δ = T.2 single pulse t p t T -5-4 -3-2 - t p (s) Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration _ Product data sheet Rev. 24 March 29 4 of
7. Characteristics Table 6. Characteristics T j =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source breakdown I D =µa; V GS =V voltage T j =25 C 6 - - V T j = 55 C 55 - - V V GS(th) gate-source threshold voltage I D =.25 ma; V DS =V GS ; see Figure 9 and T j =25 C.6 2 2. V T j = 5 C.6 - - V T j = 55 C - - 2.75 V I DSS drain leakage current V DS =48V; V GS =V T j =25 C -. µa T j = 5 C - - µa I GSS gate leakage current V GS = ±5 V; V DS = V - na R DSon drain-source on-state resistance V GS =V; I D = 5 ma; see Figure 6 and 8 T j =25 C - 2.8 5 Ω T j = 5 C - - 9.25 Ω V GS = 4.5 V; I D =75mA; see Figure 6 and 8-3.8 5.3 Ω Dynamic characteristics C iss input capacitance V GS =V; V DS =V; - 3 5 pf C oss output capacitance f = MHz; see Figure 2-6.8 3 pf C rss reverse transfer - 3.5 pf capacitance t on turn-on time V DS =5V; R L = 25 Ω; - 2.5 ns t off turn-off time V GS = V; R G =5Ω; R GS =5Ω - 5 ns Source-drain diode V SD source-drain voltage I S = 3 ma; V GS =V; -.85.5 V see Figure t rr reverse recovery time I S = 3 ma; - 3 - ns Q r recovered charge di S /dt = A/µs; V GS =V - 3 - nc _ Product data sheet Rev. 24 March 29 5 of
I D (A).8 3aab352 5 4.5 R DSon (mω) 8 V GS (V) = 4 4.5 3aab353.6 6.4 4 4 5.2 V GS (V) = 3.5 2 2 3 4 V DS (V).2.4.6.8 I D (A) T j =25 C T j =25 C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of drain current; typical values 3aab354 2.4 3aa28 I D (A) a.8.8.6.2.4 T j = 5 C 25 C.2.6 2 4 6 V GS (V) 6 6 2 8 T j ( C) T j =25 C and 5 C; V DS >I D R DSon R a = DSon ----------------------------- R DSon ( 25 C ) Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature _ Product data sheet Rev. 24 March 29 6 of
3 3aab -3 3aab V GS(th) (V) max I D (A) 2 typ -4 min typ max min -5-6 6 2 8 T j ( C) -6 2 3 V GS (V) Fig 9. I D =.25 ma; V DS =V GS T j =25 C; V DS =5V Gate-source threshold voltage as a function of junction temperature Fig. Sub-threshold drain current as a function of gate-source voltage 3aab356 2 3aab357 I S (A).8 C (pf) C iss.6.4 C oss.2 5 C T j = 25 C C rss.2.4.6.8 V SD (V) - V DS (V) 2 T j =25 C and 5 C; V GS =V V GS = V; f = MHz Fig. Source current as a function of source-drain voltage; typical values Fig 2. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values _ Product data sheet Rev. 24 March 29 7 of
8. Package outline Plastic surface-mounted package; 3 leads SOT23 D B E A X H E v M A 3 Q A A 2 c e bp w M B Lp e detail X 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A max.. mm..9 b p c D E e e H E L p Q v w.48.38.5.9 3. 2.8.4.2.9.95 2.5 2..45.5.55.45.2. OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA TO-236AB EUROPEAN PROJECTION ISSUE DATE 4--4 6-3-6 Fig 3. Package outline SOT23 _ Product data sheet Rev. 24 March 29 8 of
9. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes _ 29324 Product data sheet - - _ Product data sheet Rev. 24 March 29 9 of
. Legal information. Data sheet status Document status [][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com..2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail..3 Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 634) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities..4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS is a trademark of NXP B.V.. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com _ Product data sheet Rev. 24 March 29 of
2. Contents Product profile........................... General description.......................2 Features...............................3 Applications............................4 Quick reference data..................... 2 Pinning information...................... 3 Ordering information..................... 2 4 Marking................................ 2 5 Limiting values.......................... 2 6 Thermal characteristics................... 4 7 Characteristics.......................... 5 8 Package outline......................... 8 9 Revision history......................... 9 Legal information........................ Data sheet status.......................2 Definitions.............................3 Disclaimers............................4 Trademarks........................... Contact information..................... 2 Contents.............................. Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 24 March 29 Document identifier: _