BUK755-3A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using V DS Drain-source voltage 3 V trench technology which features I D Drain current (DC) 75 A very low on-state resistance. It is P tot Total power dissipation 23 W intended for use in automotive and T j Junction temperature 75 C general purpose switching R DS(ON) Drain-source on-state 5 mω applications. resistance V GS = V PINNING - TO22AB PIN CONFIGURATION SYMBOL PIN gate DESCRIPTION tab d 2 drain 3 source g tab drain 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 3) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS Drain-source voltage - - 3 V V DGR Drain-gate voltage R GS = 2 kω - 3 V ±V GS Gate-source voltage - - 2 V I D Drain current (DC) T mb = 25 C - 75 A I D Drain current (DC) T mb = C - 75 A I DM Drain current (pulse peak value) T mb = 25 C - A P tot Total power dissipation T mb = 25 C - 23 W T stg, T j Storage & operating temperature - - 55 75 C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Thermal resistance junction to - -.65 K/W mounting base R th j-a Thermal resistance junction to Minimum footprint, FR 5 - K/W ambient board September 999 Rev.
BUK755-3A STATIC CHARACTERISTICS T j = 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = V; I D =.25 ma; 3 - - V voltage T j = -55 C 27 - - V V GS(TO) Gate threshold voltage V DS = V GS ; I D = ma 2 3.. V T j = 75 C - - V T j = -55 C - -. V I DSS Zero gate voltage drain current V DS = 3 V; V GS = V; -.5 µa T j = 75 C - - 5 µa I GSS Gate source leakage current V GS = ±2 V; V DS = V - 2 na R DS(ON) Drain-source on-state V GS = V; I D = 25 A -.3 5 mω resistance T j = 75 C - - 9.3 mω DYNAMIC CHARACTERISTICS T mb = 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C iss Input capacitance V GS = V; V DS = 25 V; f = MHz - 5 6 pf C oss Output capacitance - 5 8 pf C rss Feedback capacitance - 96 3 pf t d on Turn-on delay time V DD = 3 V; R load =.2Ω; - 35 55 ns t r Turn-on rise time V GS = V; R G = Ω - 3 2 ns t d off Turn-off delay time - 55 23 ns t f Turn-off fall time - 5 22 ns L d Internal drain inductance Measured from contact screw on - 3.5 - nh tab to centre of die L d Internal drain inductance Measured from drain lead 6 mm -.5 - nh from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nh from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - 75 A current I DRM Pulsed reverse drain current - - 2 A V SD Diode forward voltage I F = 25 A; V GS = V -.85.2 V I F = 75 A; V GS = V -. - V t rr Reverse recovery time I F = 75 A; -di F /dt = A/µs; - - ns Q rr Reverse recovery charge V GS = - V; V R = 3 V -. - µc September 999 2 Rev.
BUK755-3A AVALANCHE LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT W DSS Drain-source non-repetitive I D = 75 A; V DD 25 V; - - 5 mj unclamped inductive turn-off V GS = V; R GS = 5 Ω; T mb = 25 C energy 2 9 8 7 6 5 3 2 PD% Normalised Power Derating 2 6 8 2 6 8 Tmb / C Fig.. Normalised power dissipation. PD% = P D /P D 25 C = f(t mb ) Fig.3. Safe operating area. T mb = 25 C I D & I DM = f(v DS ); I DM single pulse; parameter t p 2 9 8 7 6 5 3 2 ID% Normalised Current Derating 2 6 8 2 6 8 Tmb / C Fig.2. Normalised continuous drain current. ID% = I D /I D 25 C = f(t mb ); conditions: V GS 5 V... D =.5.2..5.2 Zth / (K/W) D = T.. t/s. Fig.. Transient thermal impedance. Z th j-mb = f(t); parameter D = t p /T P D tp T tp t September 999 3 Rev.
BUK755-3A ID/A 3 2.. 2.. 9.5 9. VGS/V = 8.5 8. ID/A 8 7.5 6 2 5.5 5..5 2 VDS/V 6 8 Fig.5. Typical output characteristics, T j = 25 C. I D = f(v DS ); parameter V GS 7. 6.5 6. 2 Tj/C = 75 25 2 3 5 6 7 VGS/V Fig.8. Typical transfer characteristics. I D = f(v GS ) ; conditions: V DS = 25 V; parameter T j RDS(ON)/mOhm VGS/V = 9 8 7 6 5 5.5 6. 6.5 7. 8.. 3 2 ID/A 6 8 Fig.6. Typical on-state resistance, T j = 25 C. R DS(ON) = f(i D ); parameter V GS 9 gfs/s 8 7 6 5 3 2 2 ID/A 6 8 Fig.9. Typical transconductance, T j = 25 C. g fs = f(i D ); conditions: V DS = 25 V 7.5 RDS(ON)/mOhm 7 6.5 6 5.5 5.5 a 2.5.5 3V TrenchMOS 3.5 3 5 VGS/V 5 2 Fig.7. Typical on-state resistance, T j = 25 C. R DS(ON) = f(v GS ); conditions I D = 25 A; - -5 5 5 2 Tj / C Fig.. Normalised drain-source on-state resistance. a = R DS(ON) /R DS(ON)25 C = f(t j ); I D = 25 A; V GS = 5 V September 999 Rev.
BUK755-3A VGS(TO) / V 5 max. BUK759-6 2 VGS/V typ. 8 3 2 min. 6 VDS = V 2V 2 - -5 5 5 2 Tj / C Fig.. Gate threshold voltage. V GS(TO) = f(t j ); conditions: I D = ma; V DS = V GS 2 6 8 2 QG/nC Fig.. Typical turn-on gate-charge characteristics. V GS = f(q G ); conditions: I D = 5 A; parameter V DS E- Sub-Threshold Conduction ID/A E-2 8 E-3 2% typ 98% 6 Tj/C = 75 25 E- E-5 2 E-6 2 3 5 Fig.2. Sub-threshold drain current. I D = f(v GS) ; conditions: T j = 25 C; V DS = V GS..2.3..5.6.7.8.9. VSDS/V Fig.5. Typical reverse diode current. I F = f(v SDS ); conditions: V GS = V; parameter T j Thousands pf 9 8 7 6 5 3 2.. VDS/V Fig.3. Typical capacitances, C iss, C oss, C rss. C = f(v DS ); conditions: V GS = V; f = MHz Ciss Coss Crss WDSS% 2 9 8 7 6 5 3 2 2 6 8 2 6 8 Tmb / C Fig.6. Normalised avalanche energy rating. W DSS % = f(t mb ); conditions: I D = 75 A September 999 5 Rev.
BUK755-3A L + VDD RD + VDD VGS VDS T.U.T. - -ID/ VGS RG VDS T.U.T. - RGS R shunt Fig.7. Avalanche energy test circuit. W DSS =.5 LI 2 D BV DSS /(BV DSS V DD ) Fig.8. Switching test circuit. September 999 6 Rev.
BUK755-3A MECHANICAL DATA Dimensions in mm Net Mass: 2 g,5 max,3 max 3,7,3 2,8 5,9 min 5,8 max 3, max not tinned,3 max (2x) 2 3 2,5 2,5 3, 3,5 min,9 max (3x),6 2, Fig.9. SOT78 (TO22AB); pin 2 connected to mounting base. Notes. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO22) envelopes. 3. Epoxy meets UL9 V at /8". September 999 7 Rev.
BUK755-3A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 3). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 999 8 Rev.