case T C = 25 C, t P = 10 ms 32 A Non-repetitive peak forward current I F,max T C = 25 C, t P = 10 µs 120 A I 2 t value i 2 T C = 25 C, t P = 10 ms 5

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Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive temperature coefficient of V F Extremely fast switching speeds Superior figure of merit Q C/I F Package RoHS Compliant case 2 1 TO 220AC GB05SLT12-220 V RRM = 1200 V I F (Tc = 25 C) = 12 A I F (Tc 150 C) = 5 A Q C = 21 nc PIN 1 PIN 2 CASE Advantages Low standby power losses Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Low reverse recovery current Low device capacitance Low reverse leakage current at operating temperature Applications Power Factor Correction (PFC) Switched-Mode Power Supply (SMPS) Solar Inverters Wind Turbine Inverters Motor Drives Induction Heating Uninterruptible Power Supply (UPS) High Voltage Multipliers Maximum Ratings at T j = 175 C, unless otherwise specified Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage V RRM 1200 V Continuous forward current I F T C = 25 C 12 A Continuous forward current I F T C 150 C 5 A RMS forward current I F(RMS) T C 150 C 8 A Surge non-repetitive forward current, Half Sine T C = 25 C, t P = 10 ms 32 I Wave F,SM T C = 150 C, t P = 10 ms 26 A Non-repetitive peak forward current I F,max T C = 25 C, t P = 10 µs 120 A I 2 t value i 2 T C = 25 C, t P = 10 ms 5 dt T C = 150 C, t P = 10 ms 3.4 A 2 s Power dissipation P tot T C = 25 C 117 W Operating and storage temperature T j, T stg -55 to 175 C Electrical Characteristics at T j = 175 C, unless otherwise specified Parameter Symbol Conditions Values min. typ. max. Unit Diode forward voltage V F I F = 5 A, T j = 25 C 1.6 1.9 I F = 5 A, T j = 175 C 2.6 3.0 V Reverse current I R V R = 1200 V, T j = 25 C 5 50 V R = 1200 V, T j = 175 C 10 100 µa V R = 400 V 21 Total capacitive charge Q C I F I F,MAX nc V R = 960 V 35 di F/dt = 200 A/μs Switching time t s T j = 175 C V R = 400 V < 25 ns V R = 960 V V R = 1 V, f = 1 MHz, T j = 25 C 260 Total capacitance C V R = 400 V, f = 1 MHz, T j = 25 C 25 pf V R = 1000 V, f = 1 MHz, T j = 25 C 20 Thermal Characteristics Thermal resistance, junction - case R thjc 1.4 C/W Mechanical Properties Mounting torque M 0.6 Nm Aug 2014 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg 1 of 4

Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 3: Power Derating Curve Figure 4: Current Derating Curves (D = t P/T, t P= 400 µs) (Considering worst case Z th conditions ) Figure 5: Typical Junction Capacitance vs Reverse Voltage Characteristics Figure 6: Typical Capacitive Energy vs Reverse Voltage Characteristics Aug 2014 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg 2 of 4

Figure 7: Current vs Pulse Duration Curves at T C = 155 C Figure 8: Transient Thermal Impedance Package Dimensions: TO-220AC PACKAGE OUTLINE Ref. 0.103 (2.616) 0.113 (2.870) 0.400 (10.160) 0.420 (10.668) Ø 0.146 (3.708) Ref. 0.156 (3.962) 0.171 (4.343) 0.181 (4.597) 0.045 (1.143) 0.055 (1.397) 0.585 0.595 (14.859) (15.113) GB05SLT12-220 XXXXXX 0.351 0.361 (8.915) (9.169) 0.487 (12.387) 0.248 (6.299) 0.256 (6.502) 0.300 (7.620) 0.308 (7.823) Lot Code 0.047 (1.194) 0.053 (1.346) 0.250 (6.350) MAX. 0.028 (0.711) 0.035 (0.965) 0.080 (2.032) 0.120 (3.048) 0.500 (12.700) 0.580 (14.732) 0.100 BSC. (2.540) BSC. 0.012 (0.305) 0.018 (0.457) NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Aug 2014 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg 3 of 4

Revision History Date Revision Comments Supersedes 2014/08/26 3 Updated Electrical Characteristics 2013/02/05 2 Second generation update 2012/05/22 1 Second generation release 2010/12/14 0 Initial release Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Aug 2014 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg 4 of 4

SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website (http://www.genesicsemi.com/images/products_sic/rectifiers/gb05slt12-220_spice.pdf) into LTSPICE (version 4) software for simulation of the GB05SLT12-220. MODEL OF GeneSiC Semiconductor Inc. $Revision: 1.0 $ $Date: 04-SEP-2013 $ GeneSiC Semiconductor Inc. 43670 Trade Center Place Ste. 155 Dulles, VA 20166 COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. ALL RIGHTS RESERVED These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE." Models accurate up to 2 times rated drain current. Start of GB05SLT12-220 SPICE Model.SUBCKT GB05SLT12 ANODE KATHODE R1 ANODE INT R=((TEMP-24)0.0015); Temperature Dependant Resistor D1 INT KATHODE GB05SLT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB05SLT12_PIN; Call the PiN Diode Model.MODEL GB05SLT12_25C D + IS 5.83E-18 RS 0.1276 + N 1 IKF 602 + EG 1.2 XTI 3 + CJO 3.00E-10 VJ 0.419 + M 1.6 FC 0.5 + TT 1.00E-10 BV 1200 + IBV 1.00E-03 VPK 1200 + IAVE 5 TYPE SiC_Schottky + MFG GeneSiC_Semiconductor.MODEL GB05SLT12_PIN D + IS 3.50 E-12 RS 0.3648 + N 4.409 IKF 73 + EG 3.23 XTI -6 + FC 0.5 TT 0 + BV 1200 IBV 1.00E-03 + VPK 1200 IAVE 1 + TYPE SiC_PiN.ENDS End of GB05SLT12-220 SPICE Model Sep 2013 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg 1 of 1