NGTBNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low forward voltage. Features Extremely Efficient Trench with Field Stop Technology T Jmax = 7 C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching s Short Circuit Capability These are PbFree Devices A, V V CEsat =. V E off =. mj C Typical Applications Solar Inverter Uninterruptible Power Inverter Supplies (UPS) Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V CES V G E Collector current @ TC = C @ TC = C I C Pulsed collector current, T pulse I CM A limited by T Jmax A G C E TO7 CASE AL Diode forward current @ TC = C @ TC = C I F A MARKING DIAGRAM Diode pulsed current, T pulse limited I FM A by T Jmax Gateemitter voltage Transient gateemitter voltage (T pulse = s, D <.) V GE ± ± V NFL AYWWG Power Dissipation @ TC = C @ TC = C Short Circuit Withstand Time V GE = V, V CE = V, T J C P D 7 W T SC s Operating junction temperature range T J to +7 C Storage temperature range T stg to +7 C Lead temperature for soldering, / from case for seconds T SLD C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G ORDERING INFORMATION Device Package Shipping NGTBNFLWG = Assembly Location = Year = Work Week = PbFree Package TO7 (PbFree) Units / Rail Semiconductor Components Industries, LLC, April, Rev. Publication Order Number: NGTBNFLW/D
NGTBNFLWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R JC. C/W Thermal resistance junctiontocase, for Diode R JC. C/W Thermal resistance junctiontoambient R JA C/W ELECTRICAL CHARACTERISTICS (T J = C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, gateemitter shortcircuited V GE = V, I C = A V (BR)CES V Collectoremitter saturation voltage V GE = V, I C = A V GE = V, I C = A, T J = 7 C Gateemitter threshold voltage V GE = V CE, I C = A V GE(th)... V Collectoremitter cutoff current, gate V GE = V, V CE = V I CES. ma emitter shortcircuited V GE = V, V CE = V, T J = 7 C Gate leakage current, collectoremitter shortcircuited V CEsat... V GE = V, V CE = V I GES na V Input capacitance C ies 7 pf Output capacitance V CE = V, V GE = V, f = MHz C oes Reverse transfer capacitance C res Gate charge total Q g nc Gate to emitter charge V CE = V, I C = A, V GE = V Q ge Gate to collector charge Q gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t d(on) ns Rise time t r Turnoff delay time T J = C t d(off) Fall time V CC = V, I C = A R g = t f Turnon switching loss V GE = V/ V E on. mj Turnoff switching loss E off. Total switching loss E ts. Turnon delay time t d(on) ns Rise time t r Turnoff delay time T J = 7 C t d(off) Fall time V CC = V, I C = A R g = t f Turnon switching loss V GE = V/ V E on. mj Turnoff switching loss E off. Total switching loss E ts.9 DIODE CHARACTERISTIC Forward voltage V GE = V, I F = A V GE = V, I F = A, T J = 7 C Reverse recovery time T J = C t rr ns Reverse recovery charge I F = A, V R = V di F /dt = A/ s Q rr. c Reverse recovery current I rrm A Reverse recovery time T J = 7 C t rr 9 ns Reverse recovery charge I F = A, V R = V di F /dt = A/ s Q rr. c Reverse recovery current I rrm. A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. V F... V
NGTBNFLWG TYPICAL CHARACTERISTICS V GE = V to V 7 V T J = C V V 9 V V 7 T J = C V GE = V to V V V 9 V V 7 V 7 Figure. Output Characteristics Figure. Output Characteristics V GE = V to V 7 V T J = C V V 9 V V 7 T J = C T J = C 7 9 V GE, GATEEMITTER VOLTAGE (V) Figure. Output Characteristics Figure. Typical Transfer Characteristics........ 7 7 I C = 7 A I C = A I C = A 7 V F, FORWARD VOLTAGE (V)....... 7 I F = A I F = A I F = A 7 7 T J, JUNCTION TEMPERATURE ( C) T J, JUNCTION TEMPERATURE ( C) Figure. V CE(sat) vs T J Figure. V F vs. T J
NGTBNFLWG TYPICAL CHARACTERISTICS C, CAPACITANCE (pf) C ies C oes C res T J = C I F, FORWARD CURRENT (A) 7 T J = C T J = C 7 9........ V F, FORWARD VOLTAGE (V) Figure 7. Typical Capacitance Figure. Diode Forward Characteristics V GE, GATEEMITTER VOLTAGE (V) V CE = V V CE = V V GE = V I C = A SWITCHING LOSS (mj)..... E on E off V CE = V V GE = V I C = A Rg = Q G, GATE CHARGE (nc) Figure 9. Typical Gate Charge T J, JUNCTION TEMPERATURE ( C) Figure. Switching Loss vs. Temperature SWITCHING TIME (ns) t d(off) t f t d(on) t r V CE = V V GE = V I C = A Rg = SWITCHING LOSS (mj) V CE = V V GE = V T J = C Rg = E on E off 7 T J, JUNCTION TEMPERATURE ( C) Figure. Switching Time vs. Temperature Figure. Switching Loss vs. I C
NGTBNFLWG TYPICAL CHARACTERISTICS SWITCHING TIME (ns) t d(off) t f t d(on) t r V CE = V V GE = V T J = C Rg = 7 SWITCHING LOSS (mj) V CE = V V GE = V T J = C I C = A E on E off 7 Rg, GATE RESISTOR ( ) Figure. Switching Time vs. I C Figure. Switching Loss vs. Rg SWITCHING TIME (ns) V CE = V V GE = V T J = C I C = A t r t f t d(off) t d(on) 7 SWITCHING LOSS (mj) 7 E on E off V GE = V T J = C I C = A Rg = 7 7 Rg, GATE RESISTOR ( ) Figure. Switching Time vs. Rg Figure. Switching Loss vs. V CE SWITCHING TIME (ns) t d(off) t f t d(on) t r V GE = V T J = C I C = A Rg = 7 7 Figure 7. Switching Time vs. V CE.. dc operation Single Nonrepetitive Pulse T C = C Curves must be derated linearly with increase in temperature s Figure. Safe Operating Area s ms
NGTBNFLWG TYPICAL CHARACTERISTICS V GE = V, T C = C t rr, REVERSE RECOVERY TIME (ns) T J = C, I F = A T J = 7 C, I F = A 7 9 di F /dt, DIODE CURRENT SLOPE (A/ ) Figure 9. Reverse Bias Safe Operating Area Figure. t rr vs. di F /dt (V R = V) Q rr, REVERSE RECOVERY CHARGE ( C) T J = 7 C, I F = A T J = C, I F = A 7 9 I rm, REVERSE RECOVERY CURRENT (A) 7 T J = 7 C, I F = A T J = C, I F = A 7 9 di F /dt, DIODE CURRENT SLOPE (A/ ) di F /dt, DIODE CURRENT SLOPE (A/ ) Figure. Q rr vs. di F /dt (V R = V) Figure. I rm vs. di F /dt (V R = V) V CE = V, R G =, V GE = / V T C = C T C = C T C = C Ipk (A).. FREQUENCY (khz) Figure. Collector Current vs. Switching Frequency
NGTBNFLWG TYPICAL CHARACTERISTICS SQUAREWAVE PEAK R(t) ( C/W).... E % Duty Cycle % % % % Single Pulse E. Junction R R C C. ONPULSE WIDTH (s) Duty Factor = t /t Peak T J = P DM x Z JC + T C. Figure. IGBT Transient Thermal Impedance R n C n Case R JC =.. R i ( C/W) C i (J/ C).77.7...7..79.9.. SQUAREWAVE PEAK R(t) ( C/W).. % Duty Cycle % % % % Single Pulse R JC =. Junction R R R n C C Duty Factor = t /t Peak T J = P DM x Z JC + T C. E E... ONPULSE WIDTH (s) Figure. Diode Transient Thermal Impedance C n Case R i ( C/W) C i (J/ C).77...9.97..9.9.79.7.79..7.9.9.77.77.. 7
NGTBNFLWG Figure. Test Circuit for Switching Characteristics Figure 7. Definition of Turn On Waveform
NGTBNFLWG Figure. Definition of Turn Off Waveform 9
NGTBNFLWG PACKAGE DIMENSIONS TO7 CASE AL ISSUE A E/ NOTE D L X b NOTE E e A Q E NOTE L NOTE c b X b. M B A M A B A NOTE 7 SEATING PLANE S P. M B A M NOTE NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.M, 99.. CONTROLLING DIMENSION: MILLIMETERS.. SLOT REQUIRED, NOTCH MAY BE ROUNDED.. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED. PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L.. P SHALL HAVE A MAXIMUM DRAFT ANGLE OF. TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF.9. 7. DIMENSION A TO BE MEASURED IN THE REGION DEFINED BY L. MILLIMETERS DIM MIN MAX A.7. A.. b.. b.. b.. c.. D.. E.. E..9 e. BSC L 9.. L.. P.. Q.. S. BSC ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at /site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box, Denver, Colorado 7 USA Phone: 77 or Toll Free USA/Canada Fax: 77 or 7 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 9 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 7 ON Semiconductor Website: Order Literature: http:///orderlit For additional information, please contact your local Sales Representative NGTBNFLW/D