Eletroni Supplementry Mteril (ESI) for Journl of Mterils Chemistry A. This journl is The Royl Soiety of Chemistry 201 Supplementry Informtion High-Performne Mixed-Dimensionl Perovskite Solr Cells with Enhned Stility ginst Humidity, Het nd UV Light Hiying Zheng, Guozhen Liu, Xiojing Chen, Bing Zhng, d Ahmed Alsedi, Tswr Hyt, e Xu Pn,* nd Songyun Di* d Key Lortory of Photovolti nd Energy Conservtion Mterils, Institute of Applied Tehnology, Hefei Institutes of Physil Siene, Chinese Ademy of Sienes, Hefei 230031, Chin. University of Siene nd Tehnology of Chin, Hefei 230026, Chin. NAAM Reserh Group, Deprtment of Mthemtis, Fulty of Siene, King Adulziz University, Jeddh 2159, Sudi Ari. d Stte Key Lortory of Alternte Eletril Power System with Renewle Energy Soures, North Chin Eletri Power University, Beijing 102206, Chin. e Deprtment of Mthemtis, Quid-I-Azm University, Islmd 000, Pkistn. Emil: xpn@rntek.s.n 1
Trnsmittne HOCH 2 CH 2 NH 2 *HI 000 3500 3000 2500 2000 1500 1000 500 Wvenumer (m -1 ) Fig. S1. FTIR spetrum of HOCH 2 CH 2 NH 2 *HI. (Stndrd FTIR spetrum of HOCH 2 CH 2 NH 2 *HCl is shown in http://sds.d.ist.go.jp/sds/giin/diret frme top.gi) HOCH 2 CH 2 NH 3 I (HOCH 2 CH 2 NH 3 ) 2 PI (x=1) x=20% Intensity (.u.) Intensity (.u.) Intensity (.u.) 5 10 20 30 0 50 2 degree) 5 10 20 30 0 50 2 degree) 5 10 20 30 0 50 2 degree) Fig. S2. XRD ptterns of EAI, (EA) 2 PI (x=1) nd [(EA) 2 PI ] [(PI 3 ) 5 (MAPBr 3 ) 0.15 ] (x=20%) thin films. 2 Intensity (.u.) 0 0.1 0.16 0.1 Gussin Fit 0.12 13 1 15 2 degree) FWHM (degree) 0 2 6 10 Conentrtion (%) Fig. S3. () The mgnified XRD ptterns with gussin fit nd () the dependene of full width t hlf mximum (FWHM) for the (110) peks. 2
Normlized PL (.u.) 760 70 00 20 Wvelength (nm) Fig. S. Prtilly enlrged normlized PL spetr of [(EA) 2 PI ] x [(PI 3 ) 5 (MAPBr 3 ) 0.15 ] 1-x (x=0,,,, ) thin films. Fig. S5. AFM imges of [(EA) 2 PI ] x [(PI 3 ) 5 (MAPBr 3 ) 0.15 ] 1-x (x=0,,,, ) films. Counts 9 6 2 Counts 16 1 12 10 6 2 Counts 12 10 6 2 0 19.5 20.0 20.5 2 21.5 22.0 22.5 23.0 J s (ma m -2 ) 0 0.96 0 1.12 1.16 Voltge (V) 0 62 6 66 6 70 72 7 76 7 0 FF (%) Fig. S6. () Short-iruit urrent density (J s ), () Open iruit voltges (V o ) nd () Fill ftor (FF) histogrm fitted with Gussin distriution of the MD (x=) perovskite devies over 30 mesured devies. 3
Current Density (ma m -2 ) 20 16 12 Stedy-stte J s =20.17 ma m -2 Stedy-stte PCE=1.36% MD () Mesured t 0.91 V 20 16 12 PCE (%) 0 0 0 120 160 200 Time (s) Fig. S7. Stedy-stte mesurement of the photourrent nd PCE t the mximum power point of MD perovskite devie. PL (.u.) 700 720 760 00 0 Wvelength (nm) Norm. PL dey (. u.) t=3.69 ns t=2.35 ns line line t=1.76 ns line t=6.6 ns line t=.2 ns line 0 20 0 60 0 100 Fig. S. () PL spetr nd () TRPL dey spetr of [(EA) 2 PI ] x [(PI 3 ) 5 (MAPBr 3 ) 0.15 ] 1-x (x=0,,,, ) thin films on top of mesoporous TiO 2 lyer. DOD (.u.) Experimentl t= 115 ns - DOD (.u.) Experimentl t= 119 ns - DOD (.u.) Experimentl t= 133 ns - 100 200 300 00 500 600 700 100 200 300 00 500 600 650 100 200 300 00 500 600 700 00 DOD (.u.) Experimentl t= 107 ns - DOD (.u.) Experimentl t= 97 ns - 50 100 200 300 00 50 100 200 300 00 500
Fig. S9. Normlized TA responses of [(EA) 2 PI ] x [(PI 3 ) 5 (MAPBr 3 ) 0.15 ] 1-x (x=0,,,, ) thin films. 300 -Z'' ( 200 100 0 0 100 200 300 00 500 600 Z' ( Fig. S10. Nyquist plots of [(EA) 2 PI ] x [(PI 3 ) 5 (MAPBr 3 ) 0.15 ] 1-x (x=0,,,, ) PSCs t V= V. Normlized PCE 0 300 600 900 1200 1500 1700 Normlized J s 0 300 600 900 1200 1500 1700 Normlized V o 0.9 0.7 0.5 0 300 600 900 1200 1500 1700 d Normlized FF 1.1 0.9 0.7 0.5 0 300 600 900 1200 1500 1700 Fig. S11. Normlized () PCE, () short-iruit urrent density (J s ), () open iruit voltges (V o ) nd (d) fill ftor (FF) vrition urves of unseled norml nd MD (x=,,, ) perovskite 5
devies under out 50% RH. Normlized PCE 0 30 60 90 120 150 10 210 Normlized J s 0 30 60 90 120 150 10 210 d Normlized V o 0 30 60 90 120 150 10 210 Normlized FF 0 30 60 90 120 150 10 210 Fig. S12. Normlized () PCE, () short-iruit urrent density (J s ), () open iruit voltges (V o ) nd (d) fill ftor (FF) vrition urves of unseled norml nd MD (x=,,, ) perovskite devies t 5 C. Normlized PCE 0 2 6 10 12 1 Normlized J s 0 2 6 10 12 1 d Normlized V o Normlized FF 0 2 6 10 12 1 0 2 6 10 12 1 6
Fig. S13. Normlized () PCE, () short-iruit urrent density (J s ), () open iruit voltges (V o ) nd (d) fill ftor (FF) vrition urves of unseled norml nd MD (x=,,, ) perovskite devies under ontinuous UV irrdition. MD - 220 h Intensity (.u.) - 220 h - 0 h MD - 0 h 5 10 20 30 0 50 10 20 30 0 50 2 (degree) Fig. S1. XRD ptterns of the norml nd MD (x= ) perovskite films efore nd fter exposing to 5 C. Tle S1. Photovolti prmeters of the norml nd the MD (x=,,, nd 20%) perovskite solr ells. Devie J s (ma m -2 ) V o (V) FF (%) PCE (%) 22.39 6 67.97 16.17 22.1 9 7.03 17.91 22.20 1.10 77.13 1.79 19.7 1.12 71.79 15.6 17.55 1.13 66.69 13.20 20% 15.39 1.13 6.0 11.92 Tle S2. Photovolti prmeters of the norml nd the MD (x=) perovskite devies under reverse nd forwrd sn diretions. Devie J s (ma m -2 ) V o (V) FF (%) PCE (%) -Reverse 22.39 6 67.97 16.17 -Forwrd 1.75 7 70.16 1.09 7
-Reverse 22.20 1.10 77.13 1.79 -Forwrd 22.33 9 76.19 1.56