CC Area Image Sensor MWAE mm (type-/) Wide CC Area Image Sensor Overview The MWAE is a mm (type-/) interline transfer CC (IT-CC) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section and CCs for signal read out. The electronic shutter function has made an exposure time of / seconds possible. Further, this device has the features of high sensitivity, low noise, broad dynamic range, and low smear. This device has a total of, pixels (, horizontal vertical) and provides stable and clear images with a resolution of horizontal TV-lines and vertical TV-lines. Part Number Size System Color or B/W MWAE mm(type-/) PAL B/W Total number of pixels:, (horizontal) (vertical) High sensitivity Low noise Broad dynamic range Low smear Low image lag Electronic shutter No image distortion High reliability -pin IL ceramic package Applications Cameras for commercial use evice Configuration iagram (Unit : column) Vertical dummy bit (No P) Al shielding P P for transient Vertical dummy bit (No P) Effective pixels RG R O VO LG H H OG GN PW (Top View) WIP-C- (P : Photo diode) part φ V φ V φ V φ V φ V φ V φ V Sub PT φ V Horizontal dummy bit Effective horizontal CC Horizontal dummy bit
MWAE CC Area Image Sensor Pin escriptions Pin No. Symbol escriptions Pin No. Symbol escriptions RG Reset gate φ V Vertical CC gate R Reset drain PT P-well for protection circuit O Output drain Sub Substrate VO Video output φ V Vertical CC gate LG Load gate φ V Vertical CC gate H Horizontal CC gate φ V Vertical CC gate H Horizontal CC gate OG Output gate GN P-well PW P-well Absolute Maximum Ratings and Operating Conditions Parameter Symbol φ V Vertical CC gate φ V Vertical CC gate φ V Vertical CC gate φ V Vertical CC gate Rating Operating condition min max min typ max Reset gate voltage * RG(H)... V RG(L) Adjust. Reset drain voltage R... V Output drain voltage O... V Video output voltage VO Load gate voltage LG... V Horizontal CC H(H)... V gate voltage H(L). Horizontal CC H(H)... V gate voltage H(L). Output gate voltage OG. Adjust. V GN GN Reference voltage V P-well voltage PW Reference voltage V Vertical CC gate voltage φ V(M).. V φ V(L)... Protection P-well voltage PT... V Substrate voltage * Sub(). Adjust. V Sub()..+(). Vertical CC gate voltage φ V(H)... V φ V(M).. φ V(L)... Unit
CC Area Image Sensor MWAE Absolute Maximum Ratings and Operating Conditions(continued) Parameter Symbol Rating Operating condition min max min typ max Vertical CC gate voltage φ V(M).. V φ V(L)... Vertical CC gate voltage φ V(H) V φ V(M).. φ AV(L)... Vertical CC gate voltage φ V(M).. V φ V(L)... Vertical CC gate voltage φ V(H)... V φ V(M).. φ V(L)... Vertical CC gate voltage φ V(M).. V φ V(L)... Vertical CC gate voltage φ V(H) V φ V(M).. φ V(L)... Operating temperature T opr C Storage temperature T stg C Note)* : The RG settings are as shown in the diagram at the right. * : The Sub settings are as shown in the diagram at the right. Sub() : C component in normal operation Sub() : Pulse voltage applied when electronic shutter operates +Sub() Sub() initial setting is. v, and is adjusted to the minimum voltage when blooming does not occur at times the light input of standard light input, or the minimum voltage when injection does not occur. Image Characteristics RG(H) Color Effective S/N Saturation output Standard output Vertical smear Image Part Number or pixels typ typ typ typ typ B/W H V ( db) (mv) (mv) (db) (%) MWAE B/W Note)Standard light input is the one when exposure is done at a lens (Fujinon CFL) aperture of F, using a light source (light box) of K and nt, and placing a color temperature conversion filter LB- (HOYA) and an IR cutting filter CAW-S (t =. mm) in the light path. Standard light output is the CC output (after conversion by the emitter follower) obtained under imaging conditions using standard light input. V V RG(L) Sub() Sub() Unit
MWAE CC Area Image Sensor CS pulse timing Based on high speed pulse timing of driving LSI MN T Squeeze :, T=. ns φ H % % % CC output φ R S S % %. ns. ns. ns
CC Area Image Sensor MWAE Timing iagram (Squeeze : ) Field A timing *CBLK *H *V *CC output φ H φ H CP HCLR PBLK φ V φ V φ V φ V φ V φ V φ V φ V φ Sub Note). Items marked with * are not output by this LSI.. Sub applies only for shutter setting
MWAE CC Area Image Sensor Timing iagram (Squeeze : )(continued) Field B timing *CBLK *H *V *CC output φ H φ H CP HCLR PBLK φ V φ V φ V φ V φ V φ V φ V φ V φ Sub Note). Items marked with * are not output by this LSI.. Sub applies only for shutter setting
CC Area Image Sensor MWAE Timing iagram (Squeeze : )(continued) V Rate read out details < Field A > T T T T = /( f h ) =. ns H φ V T T T T T T φ V T T T T φ V T T T T φ V T T T T φ V φ V T T T T φ V T T T T φ V < Field B > T = /( f h ) =. ns H φ V φ V T T T T T T T T T φ V T T φ V T T T T T T φ V φ V T T φ V T T T T φ V T T
MWAE CC Area Image Sensor Timing iagram (Squeeze : )(continued) Horizontal timing chart T = /(f h ) =. ns CBLK T. µs T HCLR T T φ H φ H φ R CC out CP PBLK φ V φ V φ Sub T T T A part : P : (Valid pixels) T T T T T T φ V T T φ V T T φ V T T φ V T T φ V T T φ V T T T T T
CC Area Image Sensor MWAE Timing iagram (Squeeze : )(continued) Horizontal timing chart A part details T = / f h =. ns T φ H φ H φ R Package imensions (Unit : mm) WIP-C-.±. R..±.. +..±..±. Index mark I.O.±..±... I.O=Center of image φ.. M. +..±..±..±..±..±..±. Within (chip rotation ±. ) On-chip lens Anti-flare plate SUS.t ouble side anti-reflection film coated glass t=.±.. +...±. Chip center =.±. Chip periphery = ±..±...
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