TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TKAD TKAD Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. Ω (typ.) High forward transfer admittance: Y fs =. S (typ.) Low leakage current: I DSS = μa (V DS = V) Enhancement mode: V th =. to. V (V DS = V, I D = ma) Absolute Maximum Ratings (Ta = C) Characteristics Symbol Rating Unit Drain-source voltage V DSS V Gate-source voltage V GSS ± V Drain current DC (Note ) I D Pulse (t = ms) (Note ) I DP Drain power dissipation (Tc = C) P D W Single pulse avalanche energy (Note ) E AS mj Avalanche current I AR A Repetitive avalanche energy (Note ) E AR. mj Channel temperature T ch C Storage temperature range T stg - to C A JEDEC JEITA TOSHIBA : Gate : Drain : Source Weight:.7 g (typ.) SC-7 -UB Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch-c).7 C/W Thermal resistance, channel to ambient R th (ch-a). C/W Note : Ensure that the channel temperature does not exceed. Note : V DD = 9 V, T ch = C(initial), L =. mh, R G = Ω, I AR = A Note : Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. -9-
TKAD Electrical Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ± V, V DS = V ± μa Drain cut-off current I DSS V DS = V, V GS = V μa Drain-source breakdown voltage V (BR) DSS I D = ma, V GS = V V Gate threshold voltage V th V DS = V, I D = ma.. V Drain-source ON resistance R DS (ON) V GS = V, I D = A.. Ω Forward transfer admittance Y fs V DS = V, I D = A.. S Input capacitance C iss Reverse transfer capacitance C rss V DS = V, V GS = V, f = MHz Output capacitance C oss Rise time t r V V GS I D = A V OUT V Turn-on time t on R L = Ω Ω Switching time Fall time t f V DD V pf ns Turn-off time t off Duty %, t w = μs Total gate charge Q g Gate-source charge Q gs V DD V, V GS = V, I D = A nc Gate-drain charge Q gd 9 Source-Drain Ratings and Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note ) I DR A Pulse drain reverse current (Note ) I DRP A Forward voltage (diode) V DSF I DR = A, V GS = V.7 V Reverse recovery time t rr I DR = A, V GS = V, ns Reverse recovery charge Q rr di DR /dt = A/μs μc Marking KAD Part No. (or abbreviation code) Lot No. A line indicates Lead(Pb)-Fee Finish. -9-
TKAD I D V DS, 7 Tc = C... VGS =.V, 7. I D V DS Tc = C 7.7.. VGS = V DRAIN-SOURCE VOLTAGE V DS DRAIN-SOURCE VOLTAGE V DS I D V GS VDS = V Tc = C DRAIN-SOURCE VOLTAGE VDS V DS V GS Tc = ID = A GATE-SOURCE VOLTAGE V GS GATE-SOURCE VOLTAGE V GS FORWARD TRANSFER ADMITTANCE Yfs (S) Y fs I D VDS = V Tc = C.. DRAIN-SOURCE ON-RESISTANCE RDS (ON) (Ω) R DS (ON) I D Tc = C VGS = V V.. DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) -9-
TKAD DRAIN-SOURCE ON-RESISTANCE RDS (ON) (Ω) R DS (ON) Tc... ID = A. VGS = V. DRAIN REVERSE CURRENT IDR (A). Tc = C. I DR V DS VGS =, V...... CASE TEMPERATURE Tc ( C) DRAIN-SOURCE VOLTAGE V DS CAPACITANCE V DS V th Tc CAPACITANCE C (pf) VGS = V f = MHz Tc = C. Ciss Coss Crss GATE THRESHOLD VOLTAGE Vth VDS = V ID = ma DRAIN-SOURCE VOLTAGE V DS CASE TEMPERATURE Tc ( C) DRAIN POWER DISSIPATION PD (W) P D Tc DRAIN-SOURCE VOLTAGE VDS VDS DYNAMIC INPUT / OUTPUT CHARACTERISTICS VDD = V VGS ID = A Tc = C GATE-SOURCE VOLTAGE VGS CASE TEMPERATURE Tc ( C) TOTAL GATE CHARGE Q g (nc) -9-
TKAD NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/rth (ch-c).... μ.. Duty=... SINGLE PULSE r th t w PDM μ m m m PULSE WIDTH t w (s) t T Duty = t/t Rth (ch-c) =.7 C/W ID max (PULSED) * SAFE OPERATING AR E AS T ch... ID max (CONTINUOUS) * DC OPERATION Tc = C ms * * SINGLE NONREPETITIVE PULSE Tc= C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. μs * VDSS max AVALANCHE ENERGY EAS (mj) 7 CHANNEL TEMPERATURE (INITIAL) T ch ( C) V B VDSS DRAIN-SOURCE VOLTAGE V DS V I AR V DD V DS TEST CIRCUIT R G = Ω V DD = 9 V, L =. mh WAVEFORM = BVDSS ΕAS L I BVDSS VDD -9-
TKAD RESTRICTIONS ON PRODUCT USE 77-EN GENERAL The information contained herein is subject to change without notice. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).these TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer s own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. -9-