Transfer Characteristic

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Eeld-Effect Transstors (FETs 3.3 The CMS Common-Source Amplfer Transfer Characterstc Electronc Crcuts, Dept. of Elec. Eng., The Chnese Unersty of Hong Kong, Prof. K.-L. Wu Lesson 8&9

Eeld-Effect Transstors (FETs 3.3 The CMS Common-Source Amplfer oltage Gan oltage Gan snce CMS common-source amplfer can be desgned to prode oltage gans of 0 to 00 t exhbts a ery hgh nput resstance ts output resstance s also hgh (drawback Therefore Not affected by the body effect snce the source termnals of both Q and Q are at sgnal ground. Electronc Crcuts, Dept. of Elec. Eng., The Chnese Unersty of Hong Kong, Prof. K.-L. Wu Lesson 8&9

Eeld-Effect Transstors (FETs Equalent Crcut 3.4 The CMS Common-Gate Amplfer Body Effect B A bs gs Electronc Crcuts, Dept. of Elec. Eng., The Chnese Unersty of Hong Kong, Prof. K.-L. Wu Lesson 8&9

Eeld-Effect Transstors (FETs 3.4 The CMS Common-Gate Amplfer oltage Gan B Applyng KCL at node A r o o + ( g m + g mb whch can be rearranged to obtan the oltage gan r o o o A ( gm+ gmb+ ( ro // ro r Normally, / r << g and then we hae o m o A ( gm+ gmb( ro // ro A nput Resstance The nput current can be found from KCL at node B ( g m + gmb + r Substtutng o n terms of, we hae 0 o r R (+ ( g + g 0 m mb r0 Electronc Crcuts, Dept. of Elec. Eng., The Chnese Unersty of Hong Kong, Prof. K.-L. Wu Lesson 8&9

Eeld-Effect Transstors (FETs 3.5 The CMS Common-Dran Amplfer Equalent Crcut The output oltage can be wrtten by nspecton as o oltage Gan g R s m S gs The nput oltage can be expressed as + + R gs o gs m S gs g Thus, Then, A + o ( gm RS gs gmrs ( + gmr S nput resstance R Electronc Crcuts, Dept. of Elec. Eng., The Chnese Unersty of Hong Kong, Prof. K.-L. Wu Lesson 8&9

utput resstance To determne the output resstance, we short-crcut the nput sgnal and apply a test oltage x to the output termnal. R o ( / g r m //(/ gmb // r0 // Normally, r 0 and r 0 are suffcently large to be neglected relate to /g m, wth the result that Ro ( / gm //(/ gmb The CMS Common-Dran Amplfer About unt oltage gan Large nput resstance Small output resstance 0 Electronc Crcuts, Dept. of Elec. Eng., The Chnese Unersty of Hong Kong, Prof. K.-L. Wu Lesson 8&9

3.6 The CMS Dgtal Logc nerter The logc nerter s the most basc element n dgtal crcut desgn; t plays a role parallel to that of the amplfer n analog crcuts. An deal oltage nerter The oltage Transfer Characterstc (TC of an deal nerter Electronc Crcuts, Dept. of Elec. Eng., The Chnese Unersty of Hong Kong, Prof. K.-L. Wu Lesson 8&9

3.6 The CMS Dgtal Logc nerter Crcut peraton We wll consder two extreme cases: Case : when DD The operatng pont wll be at the ntersecton of the two cures, where s nearly zero and the current through the two FETs s also nearly zero. Ths means that the power dsspaton n the crcut s ery small. Q N prodes a low-resstance path between the output termnal and ground, wth pull-down r DSN W / k n ( DD tn L the output resstance when Q N s n Trode regon. Electronc Crcuts, Dept. of Elec. Eng., The Chnese Unersty of Hong Kong, Prof. K.-L. Wu Lesson 8&9

3.6 The CMS Dgtal Logc nerter Crcut peraton Case : when 0 GSN Q N s operatng at ; hence ts D - DS characterstc s almost a horzontal straght lne at zero current leel. The load cure s the D - DS characterstc of the p-channel dece wth 0 SGP DD Q P prodes a low-resstance path between the output termnal and the DC supply DD, wth pull-up DD r DSP W / k n ( DD tn L the output resstance when Q P s n Trode regon. Electronc Crcuts, Dept. of Elec. Eng., The Chnese Unersty of Hong Kong, Prof. K.-L. Wu Lesson 8&9

Electronc Crcuts, Dept. of Elec. Eng., The Chnese Unersty of Hong Kong, Prof. K.-L. Wu Lesson 8&9 The oltage Transfer Characterstc tn tn n n DN L W k for ( - relatonshp of Q N ges two current modes: and tn tn n n DN L W k for ( - relatonshp of Q P ges two current modes: for ( ( ( tp DD DD tp DD p n DP L W k + and for ( tp tp DD p n DP L W k + ( ( (3 (4

The oltage Transfer Characterstc Wth Q N and Q P matched Secton B-C : Q N and Q P are n saturaton Boundary of Q N n saturaton Boundary of Q P n saturaton The two crtcal ponts for determnng nose margns L and H are formally defned as the two ponts on the TC at whch the ncremental gan s unty (slope s. From eqs ( through (4, we hae H (5 8 DD L (3DD + 8 t t Electronc Crcuts, Dept. of Elec. Eng., The Chnese Unersty of Hong Kong, Prof. K.-L. Wu Lesson 8&9

Eeld-Effect Transstors (FETs 3.7 The Hgh Frequency MSFET Model Electronc Crcuts, Dept. of Elec. Eng., The Chnese Unersty of Hong Kong, Prof. K.-L. Wu Lesson 8&9

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