DISCRETE SEMICONDUCTORS DATA SHEET November 1992
FEATURES PIN CONFIGURATION High power gain Easy power control ook, halfpage 1 Gold metallization Good thermal stability Withstands full load mismatch Designed for broadband operation. 2 3 g MBB72 d s DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a -lead, SOT172D studless envelope, with a ceramic cap. All leads are isolated from the mounting base. PINNING - SOT172D PIN DESCRIPTION 1 source 2 gate 3 drain source Top view MSB7 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at T amb = 25 C in a common source test circuit. MODE OF OPERATION f (MHz) CW, class-b 5 12.5 2 > 1 > 5 V DS (V) P L (W) G p (db) η D (%) November 1992 2
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 13). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage V ±V GS gate-source voltage 2 V I D DC drain current 1 A P tot total power dissipation up to T mb =25 C 1 W T stg storage temperature 65 15 C T j junction temperature 2 C THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE R th j-mb thermal resistance from junction to mounting base 17.5 K/W R th j-a thermal resistance from junction to ambient (note 1) 75 K/W Note 1. Mounted on printed circuit board, see Fig.12. 5 I D (A) MRA989 16 P tot (W) 12 (2) MDA86 1 (1) (1) (2) 8.1 1 1 1 V DS (V) 8 12 16 T mb ( C) (1) Current in this area may be limited by R DS(on). (2) T mb =25 C. Fig.2 DC SOAR. (1) Continuous operation. (2) Short-time operation during mismatch. Fig.3 Power/temperature derating curves. November 1992 3
CHARACTERISTICS T j = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS drain-source breakdown voltage V GS = ; I D = 3 ma V I DSS drain-source leakage current V GS = ; V DS = 12.5 V 1 µa I GSS gate-source leakage current ±V GS = 2 V; V DS = 1 µa V GS(th) gate-source threshold voltage I D = 3 ma; V DS =1V 2.5 V g fs forward transconductance I D =.3 A; V DS = 1 V 8 135 ms R DS(on) drain-source on-state resistance I D =.3 A; V GS =15V 3.5 Ω I DSX on-state drain current V GS = 15 V; V DS =1V 1.3 A C is input capacitance V GS =;V DS = 12.5 V; f = 1 MHz 5.3 pf C os output capacitance V GS =;V DS = 12.5 V; f = 1 MHz 7.8 pf C rs feedback capacitance V GS =;V DS = 12.5 V; f = 1 MHz 1.8 pf 15 T.C (mv/k) 1 MDA85 16 I D (ma) 12 MDA8 5 8 5 1 1 1 2 1 I D (A) 3 8 12 16 2 V GS (V) V DS =1V. V DS =1V ; T j =25 C. Fig. Temperature coefficient of gate-source voltage as a function of drain current, typical values. Fig.5 Drain current as a function of gate-source voltage, typical values. November 1992
5 R DSon (Ω) MDA83 3 C (pf) MDA82 3 2 2 1 1 C os C is 8 12 T j ( C) 16 8 12 16 V DS (V) I D =.3 A; V GS =15V. V GS = ; f = 1 MHz. Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. 5 C rs (pf) MDA81 3 2 1 8 12 V DS (V) 16 V GS = ; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. November 1992 5
APPLICATION INFORMATION FOR CLASS-B OPERATION T amb =25 C; R GS = 27 Ω, unless otherwise specified. RF performance in a common source class-b test circuit. MODE OF OPERATION f (MHz) V DS (V) I DQ (ma) P L (W) G P (db) CW, class-b 5 12.5 1 2 > 1 typ. 13 η D (%) > 5 typ. 6 Ruggedness in class-b operation The is capable of withstanding a load mismatch corresponding to VSWR = 5:1 through all phases under the following conditions: V DS = 15.5 V; f = 5 MHz at rated output power. 2 G p (db) 16 G p MDA8 1 η D (%) 8 P L (W) 3 MDA79 12 η D 6 2 8 2 1.5 1.5 2.5 P L (W) 3.5.2..6.8 1. P IN (W) Class-B operation; V DS = 12.5 V; I DQ = 1 ma; Z L = 9.5 + j12.8; f = 5 MHz. Class-B operation; V DS = 12.5 V; I DQ = 2 ma; Z L = 9.5 + j12.8; f = 175 MHz. Fig.9 Power gain and efficiency as functions of load power, typical values. Fig.1 Load power as a function of input power, typical values. November 1992 6
handbook, full pagewidth 5 Ω input C1 C3 L1 L2 L3 L D.U.T. C12 L5 L8 L9 L1 C15,,,,, C13 C1 5 Ω output C2 C R1 L6 C5 C7 C8 R6 C11 R2 R3 L7 C9 C6 C1 R R5 +V D MDA75 f = 5 MHz. Fig.11 Test circuit for class-b operation. November 1992 7
List of components (class-ab test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C5, C8, C15 multilayer ceramic chip capacitor 39 pf, 5 V (note 1) C2, C13 film dielectric trimmer 2 to 9 pf 2222 89 92 C3 multilayer ceramic chip capacitor 5.6 pf, 5 V (note 2) C film dielectric trimmer 2 to 18 pf 2222 89 93 C6, C11 multilayer ceramic chip capacitor 2 1 nf in 2222 852 71 parallel, 5 V C7, C9 multilayer ceramic chip capacitor 1 nf, 5 V 2222 852 71 C1 electrolytic capacitor 1 µf, 63 V 2222 3 3819 C12 multilayer ceramic chip capacitor 9.1 pf, 5 V (note 2) C1 film dielectric trimmer 1. to 5.5 pf 2222 89 91 L1 stripline (note 3) 83 Ω 2 2mm L2 stripline (note 3) 83 Ω 21 2mm L3 stripline (note 3) 83 Ω 19 2mm L, L5 stripline (note 3) 67 Ω 12 3mm L6 5 turns enamelled.5 mm copper wire 62 nh length 3.75 mm int. dia. 3 mm leads 2 mm L7 grade 3B Ferroxcube RF choke 312 2 3662 L8 stripline (note 3) 83 Ω 18.6 2mm L9 stripline (note 3) 83 Ω 31.6 2mm L1 stripline (note 3) 83 Ω 2 2mm R1. W metal film resistor 27 Ω 2322 151 7271 R2. W metal film resistor 1.96 kω 2322 151 71962 R3. W metal film resistor 1 MΩ 2322 151 715 R cermet potentiometer 5 kω R5. W metal film resistor 7.5 kω 2322 151 7752 R6 1 W metal film resistor 1 Ω 2322 153 519 Notes 1. American Technical Ceramics (ATC) capacitor, type 1B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 1A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε r = 2.2), thickness 1.6 mm. November 1992 8
handbook, full pagewidth R +V DS C11 C9 C1 C1 L1 L2 C3 L3 R3 C7 R2 C6 L C5 R1 R6 C8 L5 L7 L6 L8 C12 L9 C15 L1 C2 C C13 C1 MBA381 handbook, full pagewidth 15 mm strap rivets rivets strap 7 mm strap rivets strap mounting screws (6x) MBA38 The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Fig.12 Component layout for 5 MHz test circuit. November 1992 9
5 Z i (Ω) r i MDA78 5 Z L (Ω) MDA77 3 R L 5 x i 2 X L 1 1 1 2 3 5 f (MHz) 1 2 3 f (MHz) 5 Class-B operation; V DS = 12.5 V; I DQ = 1 ma; R GS = 27 Ω; P L =2W. Class-B operation; V DS = 12.5 V; I DQ = 1 ma; R GS = 27 Ω; P L =2W. Fig.13 Input impedance as a function of frequency (series components), typical values per section. Fig.1 Load impedance as a function of frequency (series components), typical values. 2 G p (db) 16 MDA76 12 8 Z i Z L MBA379 1 2 3 f (MHz) 5 Class-B operation; V DS = 12.5 V; I DQ = 1 ma; R GS = 27 Ω; P L =2W. Fig.15 Definition of MOS impedance. Fig.16 Power gain as a function of frequency, typical values. November 1992 1
Common emitter S-parameters Measured at V DS = 12.5 V and I D = 1 ma. f (MHz) Measured at V DS = 12.5 V and I D = 15 ma. S 11 S 21 S 12 S 22.968 2. 1.79 161.5. 72.6.9 27. 1.86 55. 9.15 138.3.9 51.7.828 62. 2.71 91. 6.353 112.7.13 29.7.735 1.8 3.626 112..693 97..1 17.2.693 122.7.587 127. 3.622 85.6.11 9..678 136.3 5.58 137.1 2.959 76.5.139..675 15. 6.58 1.6 2.98 68.8.135..675 152.1 7.581 151.7 2.131 61..13 2.5.677 157.5 8.588 157.6 1.87 5.7.123.3.677 162.3 9.596 163.5 1.656 8.8.115.8.683 166.9 1.65 168.8 1.73 3..17..689 171.2 f (MHz) S 11 S 21 S 12 S 22.965 25.9 11.35 16.6. 72..876 29.2 1.857 58.7 9.53 136.8.92 5.1.8 65.7 2.691 95.1 6.529 111.3.125 28.6.715 1.3 3.622 116.7.783 96..13 16.7.678 125.8.588 13.3 3.663 8.8.135 9.2.666 138.8 5.58 1.8 2.988 75.9.133.3.665 17.5 6.582 17.8 2.515 68..128.7.666 15. 7.586 15.9 2.15 61.2.123 1.3.668 159.1 8.588 16.5 1.897 5.6.117 2.6.669 163.8 9.599 166.3 1.673 8.8.111 2.6.675 168.1 1.69 171.7 1.93 3..13 1.7.681 172.3 November 1992 11
Measured at V DS = 12.5 V and I D = 2 ma. f (MHz) Measured at V DS = 12.5 V and I D = 25 ma. S 11 S 21 S 12 S 22.965 26.7 11.66 16.1. 71..85 3. 1.851 6.7 9.625 135.9.91 9..783 67.7 2.688 97.5 6.52 11.5.123 27.9.699 16.5 3.623 118.8.751 95.2.131 16..666 127.6.59 132.7 3.6 8.3.132 9.2.657 1.3 5.585 12. 2.968 75.3.13.3.658 18.7 6.583 15. 2.95 67.8.126 1..659 155. 7.589 156.7 2.137 6.7.12.8.662 16. 8.593 162.2 1.877 5.3.11 1.9.66 16.6 9.62 167.8 1.656 8..18 1.7.67 168.9 1.612 173. 1.76 2.8.1.5.677 173. f (MHz) S 11 S 21 S 12 S 22.963 27.3 11.6 159.7.5 7.8.832 31.3 1.88 62. 9.567 135.2.92 8.9.766 69.2 2.686 99.3 6.3 19.8.123 27..688 18.2 3.62 12.3.67 9.6.13 16..657 128.9.59 13.2 3.582 83.8.13 8.9.651 11.3 5.585 13.9 2.91 7.7.128.2.651 19.6 6.59 15.8 2.7 67..12.9.65 155.8 7.595 157.6 2.97 6.3.119.6.658 16.7 8.61 163.1 1.8 53.8.113 1.7.66 165.2 9.67 168.8 1.625 8..16 1.3.667 169. 1.613 17.1 1.7 2.2.99.1.673 173.3 November 1992 12
PACKAGE OUTLINE Studless ceramic package; leads SOT172D D A Q D 1 c H b b 1 H 1 3 2 5 1 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b 1 c D D 1 H Q mm inches 3.71 2.89.16.11 3.31 3..13.12.89.63.35.25.16.1.6. 5.2.95.25.195 5.33 5.8.21.2 26.17 2.63 1.3.97 1.15.88.5.35 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT172D 97-6-28 November 1992 13
DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 13). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1992 1