DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 File under Discrete Semiconductors, SC7 996 Jul
FEATURES Interchangeability of drain and source connections Frequencies up to 7 MHz. APPLICATIONS LF, HF and DC amplifiers. PINNING PIN SYMBOL DESCRIPTION d drain s source g gate DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-9 variant package. g d s CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig. MAM57 Simplified outline (TO-9 variant) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V DS drain-source voltage ± V V GSoff gate-source cut-off voltage = na; V DS =5V.5 8 V V GSO gate-source voltage open drain V SS drain current V DS = 5 V; V GS = BF5A 6.5 ma BF5B 6 5 ma BF5C 5 ma P tot total power dissipation T amb =75 C mw y fs forward transfer admittance V DS = 5 V; V GS =; 6.5 ms f = khz; T amb =5 C C rs reverse transfer capacitance V DS = V; V GS = V; f = MHz; T amb =5 C. pf 996 Jul
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC ). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage ± V V GDO gate-drain voltage open source V V GSO gate-source voltage open drain V drain current 5 ma I G gate current ma P tot total power dissipation up to T amb =75 C; mw up to T amb =9 C; note mw T stg storage temperature 65 +5 C T j operating junction temperature 5 C Note. Device mounted on a printed-circuit board, minimum lead length mm, mounting pad for drain lead minimum mm mm. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient in free air 5 K/W thermal resistance from junction to ambient K/W STATIC CHARACTERISTICS T j =5 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V (BR)GSS gate-source breakdown voltage I G = µa; V DS = V V GSoff gate-source cut-off voltage = na; V DS =5V.5 8. V V GS gate-source voltage = µa; V DS =5V BF5A.. V BF5B.6.8 V BF5C. 7.5 V SS drain current V DS =5V; V GS = ; note BF5A 6.5 ma BF5B 6 5 ma BF5C 5 ma I GSS gate cut-off current V GS = V; V DS = 5 na V GS = V; V DS = ; T j = 5 C.5 µa Note. Measured under pulse conditions: t p = µs; δ.. 996 Jul
DYNAMIC CHARACTERISTICS Common source; T amb =5 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C is input capacitance V DS = V; V GS = V; f = MHz pf C rs reverse transfer capacitance V DS = V; V GS = V; f = MHz. pf C os output capacitance V DS = V; V GS = V; f = MHz.6 pf g is input conductance V DS =5V;V GS = ; f = MHz 5 µs g os output conductance V DS =5V;V GS = ; f = MHz µs y fs forward transfer admittance V DS =5V;V GS = ; f = khz 6.5 ms V DS =5V;V GS = ; f = MHz 6 ms y rs reverse transfer admittance V DS =5V;V GS = ; f = MHz. ms y os output admittance V DS =5V;V GS =;f=khz 5 µs f gfs cut-off frequency V DS =5V;V GS =;g fs =.7 of its 7 MHz value at khz F noise figure V DS =5V;V GS = ; f = MHz; R G =kω (common source); input tuned to minimum noise.5 db I GSS (na) MGE785 6 5 MGE789 typ 5 T j ( C) 5 V GS (V) V DS = ; V GS = V. V DS = 5 V; T j =5 C. Fig. Gate leakage current as a function of junction temperature; Fig. Transfer characteristics for BF5A; 996 Jul
6 5 MBH555 5 MGE787 V GS = V.5 V 5 V.5 V V DS (V) V GS (V) V DS = 5 V; T j =5 C. V DS = 5 V; T j =5 C. Fig. Output characteristics for BF5A; Fig.5 Transfer characteristics for BF5B; 5 MBH55 MGE788 V GS = V.5 V 5 V.5 V V.5 V V DS (V) 5 V GS (V) V DS = 5 V; T j =5 C. V DS = 5 V; T j =5 C. Fig.6 Output characteristics for BF5B; Fig.7 Transfer characteristics for BF5C; 996 Jul 5
V GS = V MBH55 MGE775 V GS = V V V V V.5 V V.5 V V DS (V) 5 T 5 j ( C) V DS = 5 V; T j =5 C. V DS =5V. Fig.8 Output characteristics for BF5C; Fig.9 Drain current as a function of junction temperature; typical values for BF5A. 5 MGE776 6 MGE779 V GS = V V GS = V 8 5 V V V V 5 T 5 j ( C) 5 T 5 j ( C) V DS =5V. Fig. Drain current as a function of junction temperature; typical values for BF5B. V DS =5V. Fig. Drain current as a function of junction temperature; typical values for BF5C. 996 Jul 6
MGE778 MGE78 g is (µa/v) g is b is (ma/v) b rs (µa/v) C rs C rs (pf) b is b rs f (MHz) f (MHz) V DS = 5 V; V GS = ; T amb =5 C. Fig. Input admittance; V DS = 5 V; V GS = ; T amb =5 C. Fig. Common source reverse admittance as a function of frequency; handbook, g fs, halfpage MGE78 MGE78 b fs (ma/v) 8 6 g fs g os (µa/v) b os g os b os (ma/v) b fs f (MHz) f (MHz) V DS = 5 V; V GS = ; T amb =5 C. Fig. Common-source forward transfer admittance as a function of frequency; V DS = 5 V; V GS = ; T amb =5 C. Fig.5 Common-source output admittance as a function of frequency; 996 Jul 7
6 MGE777.5 MGE78 C is (pf) typ C rs (pf) typ 6 8 V GS (V).5 6 8 V GS (V) V DS = V; f = MHz; T amb =5 C. Fig.6 Input capacitance as a function of gate-source voltage; V DS = V; f = MHz; T amb =5 C. Fig.7 Reverse transfer capacitance as a function of gate-source voltage; 8 y fs (ma/v) 6 BF5A BF5B MGE79 BF5C handbook, V halfpage GSoff at = na (V) 8 MGE78 6 5 5 BF5B BF5C BF5A SS at V GS = V DS = 5 V; f = khz; T amb =5 C. Fig.8 Forward transfer admittance as a function of drain current; V DS = 5 V; T j =5 C. Fig.9 Gate-source cut-off voltage as a function of drain current; 996 Jul 8
R DSon (kω) MGE79 F (db) typ MGE786 BF5A BF5B BF5C V GS (V) f (MHz) V DS = ; f = khz; T amb =5 C. Fig. Drain-source on-state resistance as a function of gate-source voltage; V DS = 5 V; V GS = ; R G =kω; T amb =5 C. Input tuned to minimum noise. Fig. Noise figure as a function of frequency; 996 Jul 9
PACKAGE OUTLINE handbook, full pagewidth. min. max.7. 5. max.7 min.8 max.5.8..66.56.5 max () MBC5 - Dimensions in mm. () Terminal dimensions within this zone are uncontrolled. Fig. TO-9 variant. 996 Jul
DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC ). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 996 Jul
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